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黃元德 (Yuan-Te Huang)
黃元德 (Yuan-Te Huang)
Development of the Double-side Multiple Partial Exposure Method with Negative Photoresist SU-8
Development of the Double-side Multiple Partial Exposure Method with Negative Photoresist SU-8
以負型光阻SU-8開發雙面多重部份曝光製程技術
以負型光阻SU-8開發雙面多重部份曝光製程技術
Here a double-side multiple partial exposure (DoMPE) method is proposed to fabricate an embedded SU-8 microstructure with more flexible inside cross section. The proposed method uses standard lithography equipment and needs only single-layer coating of negative photoresist SU-8 on glass substrate without bonding process. Process parameters, including development thickness at different front and back-side partial exposure doses, are experimentally characterized. Reflection effect due to Cr layer on glass substrate is shown to have influence on the development depth of SU-8 in front partial exposure. Here, we propose a simulation model to predict SU-8 thickness after development under partial exposure with reflection effects. Two kinds of SU-8 micro structures with different exposure dosages and coated thickness are fabricated on glass substrates to demonstrate the capability of the proposed model. For different exposure dosages or coated SU-8 thickness, the maximum difference between simulated and experimental results is shown to be less than 3.1%, which verifies the accuracy of the proposed model. Furthermore, it is found that coating thicker SU-8 not only can reduce reflection effect, but also can attenuate cross-link effect due to exposure dose accumulation on SU-8 from both front and back sides. Finally, an embedded SU-8 microstructure is demonstrated to verify that the proposed DoMPE method needs only single-layer SU-8 coating to fabricate not just embedded microstructures, but also embedded microstructure with asymmetric inside cross section.
Here a double-side multiple partial exposure (DoMPE) method is proposed to fabricate an embedded SU-8 microstructure with more flexible inside cross section. The proposed method uses standard lithography equipment and needs only single-layer coating of negative photoresist SU-8 on glass substrate without bonding process. Process parameters, including development thickness at different front and back-side partial exposure doses, are experimentally characterized. Reflection effect due to Cr layer on glass substrate is shown to have influence on the development depth of SU-8 in front partial exposure. Here, we propose a simulation model to predict SU-8 thickness after development under partial exposure with reflection effects. Two kinds of SU-8 micro structures with different exposure dosages and coated thickness are fabricated on glass substrates to demonstrate the capability of the proposed model. For different exposure dosages or coated SU-8 thickness, the maximum difference between simulated and experimental results is shown to be less than 3.1%, which verifies the accuracy of the proposed model. Furthermore, it is found that coating thicker SU-8 not only can reduce reflection effect, but also can attenuate cross-link effect due to exposure dose accumulation on SU-8 from both front and back sides. Finally, an embedded SU-8 microstructure is demonstrated to verify that the proposed DoMPE method needs only single-layer SU-8 coating to fabricate not just embedded microstructures, but also embedded microstructure with asymmetric inside cross section.
[1] Y.-T. Huang and W. Hsu, “A Simulation Model on Photoresist SU-8 Thickness after Development under Partial Exposure with Reflection Effect.” Japanese Journal of Applied Physics 2014, 53, 036505.
[1] Y.-T. Huang and W. Hsu, “A Simulation Model on Photoresist SU-8 Thickness after Development under Partial Exposure with Reflection Effect.” Japanese Journal of Applied Physics 2014, 53, 036505.
[2] Y.-T. Huang, H.-L. Chen, W. Hsu, “An Analytical Model for Calculating the Pull-in Voltage of Micro Cantilever Beams Subjected to Tilted and Curled Effects”, Microelectronic Engineering 2014. (in press)
[2] Y.-T. Huang, H.-L. Chen, W. Hsu, “An Analytical Model for Calculating the Pull-in Voltage of Micro Cantilever Beams Subjected to Tilted and Curled Effects”, Microelectronic Engineering 2014. (in press)
[3] Y.-T. Huang and W. Hsu, “Fabricating embedded SU-8 microstructures with asymmetric inside cross section by double-side multiplepartial exposure method”, Microelectronic Engineering 2014, 121, 64-67.
[3] Y.-T. Huang and W. Hsu, “Fabricating embedded SU-8 microstructures with asymmetric inside cross section by double-side multiplepartial exposure method”, Microelectronic Engineering 2014, 121, 64-67.
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