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鐘政涵 (Cheng-Han Chung)
Development Of A Inertial Micro Switch With Low Contact Resistance
Development Of A Inertial Micro Switch With Low Contact Resistance
低接觸阻值微慣性開關之研發
低接觸阻值微慣性開關之研發
In need of detecting the impact acceleration ranging in several tens of G during transportation, using passive sensors is more convenient to setup and power-efficient. However, the passive inertial switches with the threshold acceleration value in several tens of G are facing to the problems of high contact-resistance or large size.
In need of detecting the impact acceleration ranging in several tens of G during transportation, using passive sensors is more convenient to setup and power-efficient. However, the passive inertial switches with the threshold acceleration value in several tens of G are facing to the problems of high contact-resistance or large size.
In this study, we develop a passive, small in size and low contact-resistance micro inertial switch with its threshold acceleration ranging in several tens of G. The latching mechanism in the inertial switch forms an open circuit just after been fabricated. If the inertial switch experienced the acceleration greater than the threshold value from its sensing direction, the latching mechanism would be locked and form a close circuit. Setting the sensing direction normal to the wafer plane and fabricating the suspension structures via nickel-based electro-plating technology, large contact area and low resistance ratio linkage can be achieved. With the two methods, the passive inertial switch with its threshold acceleration ranging in several tens of G can not only be small in size but also low in the contact resistance.
In this study, we develop a passive, small in size and low contact-resistance micro inertial switch with its threshold acceleration ranging in several tens of G. The latching mechanism in the inertial switch forms an open circuit just after been fabricated. If the inertial switch experienced the acceleration greater than the threshold value from its sensing direction, the latching mechanism would be locked and form a close circuit. Setting the sensing direction normal to the wafer plane and fabricating the suspension structures via nickel-based electro-plating technology, large contact area and low resistance ratio linkage can be achieved. With the two methods, the passive inertial switch with its threshold acceleration ranging in several tens of G can not only be small in size but also low in the contact resistance.
The main structure is realized successfully with its overall size in 2 mm × 2 mm × 40 um. During the inertial switch experiencing the pulse acceleration induced by the shaker, the PC was simultaneously capturing the trigger signal and the acceleration value. The resistance was 100MΩ and 1.7 KΩ before and after applying 17.22G impact. From the analytical simulation, the threshold acceleration is 17.0 G with 1.3% difference compared with the experimental result.
The main structure is realized successfully with its overall size in 2 mm × 2 mm × 40 um. During the inertial switch experiencing the pulse acceleration induced by the shaker, the PC was simultaneously capturing the trigger signal and the acceleration value. The resistance was 100MΩ and 1.7 KΩ before and after applying 17.22G impact. From the analytical simulation, the threshold acceleration is 17.0 G with 1.3% difference compared with the experimental result.
[1] C.-H. Chung, R.-P. Ma, Y.-C. Shieh, and W. Hsu (June 2011). A Robust Micro Mechanical-latch Shock Switch with Low Contact Resistance, The 16th International Conference on Solid-State Sensors, Actuators and Microsystems, Beijing, China.
[1] C.-H. Chung, R.-P. Ma, Y.-C. Shieh, and W. Hsu (June 2011). A Robust Micro Mechanical-latch Shock Switch with Low Contact Resistance, The 16th International Conference on Solid-State Sensors, Actuators and Microsystems, Beijing, China.
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