2001HCL

劉祥麒 (Hsiang-Chi Liu)

Parameters study in ICP-RIE and Fabrication of Sealed Micro-Channels

ICP-RIE的製程研究及封閉型微流道的製作

Two subjects are performed in this paper. First, systematical experiments are designed to study the fabrication parameters in Advanced Silicon Etch (ASE) process. Second, an improved fabrication process of sealed micro-channel is carried out with the STS ICP-RIE system.

For the ASE process, systematical experiments are designed to study the effects under various parameters. Silicon etching rate about 3 μm/min and perpendicularity about 90±0.5° are reached in this study. In addition, sidewall roughness can be down to 10 nm rms and process can maintain at high etching rate about 2.5 μm/min. These achievements can be widely used in MEMS applications like optical devices, microfluidic applications, micro-actuators, and micro-sensors.

For the micro-channels process, it can shorten the process step, and various channel sizes can be formed by various trench depth. The advantage of non-bonding process can be easily to combine with other applications.