The structure of the scanning probe includes a cantilever beam with a sensing tip. The tip is formed by the intersection of three crystal planes during wet anisotropic etching. Two types of scanning probes with different sensing principles are proposed here. One is integrated with a piezoresistor at the root of the cantilever beam. When the cantilever beam is bending, the variation of the resistance of the piezoresistor transfers to voltage signal by Wheatstone bridge circuit. Then the magnitude of the stress on the cantilever beam can be calculated and the displacement of the beam can be determined. The shape of the cantilever is designed as a triangle to have a uniform stress distribution on the surface. The dimensions of the cantilever beam are 200μm × 40μm × 4μm.