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Β Β Β Β Β Β International Conference on Solid State Devices and Materials (September, 2022)
113. Analysis of Multi-Fin-type Vertical GaN Power Transistors Based on Bulk GaN Substrates
Β Β Β Β Β Jun Hyeok Heo , Sang Ho Lee, Jin Park, So Ra Min, Geon Uk Kim, Ga Eon Kang, Jaewon Jang, JinHyuk Bae, Sin-Hyung Lee, and In Man Kang
Β Β Β Β Β Β AWAD (July, 2022)
112. Electrical Performance depending on the Grain Boundary-Location in the Multi-Nanosheet Tunneling Field-Effect Transistor based on Poly-Si
Β Β Β Β Β Ga Eon Kang, Sang Ho Lee, Jin Park, So Ra Min, Geon Uk Kim, Jun Hyeok Heo, Jaewon Jang, JinHyuk Bae, Sin-Hyung Lee, and In Man Kan
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111. Design of Capacitorless DRAM-based on Storage Layer Separated Using Separation Oxide and Polycrystalline Silicon
Β Β Β Β Β Β Geon Uk Kim, Young Jun Yoon, Jae Hwa Seo, Min Su Cho, Sang Ho Lee, Jin Park, Hee Dae An, So Ra Min, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee, and In Man Kang
Β Β Β Β Β Β μ 29ν νκ΅λ°λ체νμ λν (January, 2022)