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[2010]

17. Rigorous Design of 22-nm Node 4-Terminal SOI FinFETs for Reliable Low Standby Power Operation with Semi-empirical Parameters

Seong-Jae Cho, Shinichi O'uchi, Kazuhiko Endo, Sang Wan Kim, Younghwan Son, In Man Kang, Meishoku Masahara,

James S. Harris Jr., Byung-Gook Park

Journal of Semiconductor Technology and Science (December, 2010)

16. Non-Quasi-Static Modeling of Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor and Its Model Verification up to 1 THz

Seongjae Cho, Kyung Rok Kim, Byung-Gook Park and In Man Kang

Japanese Journal of Applied Physics (November, 2010)

15. Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs

Seongjae Cho, In Man Kang and Kyung Rok Kim

IEICE Electronics Express (October, 2010)

14. Non-Quasi-Static RF Model for SOI FinFET and Its Verification", Journal of Semiconductor Technology and Science

In Man Kang

Journal of Semiconductor Technology and Science (June, 2010)

13. Extraction method for cross-type substrate resistances of RF MOSFETs based on PSP model

In Man Kang and Hyungcheol Shin

Electronics Letters (March, 2010)