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[2018]

104. Analysis of tunneling field-effect transistor with germanium source junction using small-signal equivalent circuit

Yung Hun Jung, In Man Kang, and Seongjae Cho

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS (December, 2018)

103. A Novel Analysis of L_gd Dependent-1/f Noise in In_0.08Al_0.92N/GaN

Jae Hwa Seo, Young Jun Yoon, Dong-Hyeok Son, Jeong-Gill Kim, Jong-Ho Lee, Jung-Hee Lee, Ki-Sik Im, and In Man Kang

IEEE Electron Device Letters (October, 2018)

102. Simulation of One-Transistor Dynamic Random-Access Memory Based on Symmetric Double-Gate Si Junctionless Transistor

Bo Gyeong Kim, Jae Hwa Seo, Young Jun Yoon, Min Su Cho, Eunseon Yu, Jung-Hee Lee, Seongjae Cho, and In Man Kang

Journal of Nanoscience and Nanotechnology (September, 2018)

101. Design Optimization of Ge/GaAs-Based Heterojunction Gate-All-Around (GAA) Arch-Shaped Tunneling Field-Effect Transistor (A-TFET)

Jae Hwa Seo, Young Jun Yoon, and In Man Kang

Journal of Nanoscience and Nanotechnology (September, 2018)

100. Low voltage operation of GaN vertical nanowire MOSFET

Dong-Hyeok Son, Young-Woo Jo, Jae Hwa Seo, Chul-Ho Won, Ki-Sik Im, Young Soo Lee, Hwan Soo Jang, Dae-Hyun Kim, In Man Kang, and Jung-Hee Lee

Solid State Electronics (July, 2018)

99. Performance comparison between p-i-n and p-n junction tunneling field-effect transistors

Young Jun Yoon, Jae Hwa Seo and In Man Kang

Japanese Journal of Applied Physics (June, 2018)

98. Capacitorless one-transistor dynamic random-access memory based on asymmetric double-gate Ge/GaAs-heterojunction tunneling field-effect transistor with n-doped boosting layer and drain-underlap structure

Young Jun Yoon, Jae Hwa Seo and In Man Kang

Japanese Journal of Applied Physics (April, 2018)

97. Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching

Dong-Hyeok Son, Young-Woo Jo, Chul-Ho Won, Jun-Hyeok Lee, Jae Hwa Seo, Sang-Heung Lee, Jong-Won Lim, Ji Heon Kim, In Man Kang, Sorin Cristoloveanu, and Jung-Hee Lee

Solid-State Electronics (March, 2018)