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* 논문 제목 클릭 시, 논문 사이트로 이동 가능 (SCI/SCIE 논문에 한해 서비스 제공) *
119. Microwave analysis of SiGe heterojunction double‐gate tunneling field‐effect transistor through its small‐signal equivalent circuit
Yung Hun Jung In Man Kang and Seongjae Cho
International Journal of RF and Microwave Computer-Aided Engineering (January, 2019)
118. Design and optimization of Germanium-Based Gate-Metal-Core Vertical Nanowire Tunnel FET
Won Douk Jang, Young Jun Yoon, Min Su Cho, Jun Hyeok Jung, Sang Ho Lee, Jaewon Jang, Jin-Hyuk Bae and In Man Kang
Micromachines (October, 2019)
Young Jun Yoon, Jae Hwa Seo, Seongjae Cho,Jong-Ho Lee and In Man Kang
Applied Physics Letters (May, 2019)
116. Analysis of operation characteristics of junctionless poly-Si 1T-DRAM in accumulation mode
Hyeonjeong Kim, In Man Kang, Seongjae Cho, Wookyung Sun and Hyungsoon Shin
Semiconductor Science and Technology (September, 2019)
115. Effect of Annealing Ambient on SnO2 Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route
Hyunjae Lee, Seunghyun Ha, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Won-Yong Lee and Jaewon Jang
Electronics (August, 2019)
114. The Crucial Role of Quaternary Mixtures of Active Layer in Organic Indoor Solar Cells
Premkumar Vincent, Jae Won Shim, Jaewon Jang, In Man Kang, Philippe Lang, Jin-Hyuk Bae, and Hyeok Kim
Energies (May, 2019)
113. Effect of Interface Traps on the Device Performance of InGaAs-Based Gate-All-Around Tunneling Field Effect Transistors
Won Douk Jang, Young Jun Yoon, Min Su Cho, Bo Gyeong Kim, and In Man Kang
Journal of Nanoscience and Nanotechnology (October, 2019)
112. Analysis of Electrical Characteristics of InAlGaN/GaN-Based High Electron Mobility Transistors with AlGaN Back Barriers
Jun Hyeok Jung, Young Jun Yoon, Min Su Cho, Bo Gyeong Kim, Won Douk Jang, and In Man Kang
Journal of Nanoscience and Nanotechnology (October, 2019)
Bo Gyeong Kim, Jae Hwa Seo, Young Jun Yoon, Min Su Cho, and In Man Kang
Journal of Nanoscience and Nanotechnology (October, 2019)
110. Simulation for Electrical Performances of the Capacitorless Dynamic Random Access Memory Based on Junctionless FinFETs
Min Su Cho, Young Jun Yoon, Bo Gyeong Kim, Jun Hyeok Jung, Won Douk Jang, Jung-Hee Lee, and In Man Kang
Journal of Nanoscience and Nanotechnology (October, 2019)
109. Capatitorless One-Transistor Dynamic Random-Access Memory Based on Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor with Si/SiGe Heterojunction and Underlap Structure for Improvement of Sensing Margin and Retention Time
Young Jun Yoon, Min Su Cho, Bo Gyeong Kim, Jae Hwa Seo, and In Man Kang
Journal of Nanoscience and Nanotechnology (October, 2019)
108. Design Optimization and Analysis of InGa/As/InAs/InGaAs Heterojunction-Based Electron-Hole Bilayer Tunneling FETs
Jae Hwa Seo, Young Jun Yoon, Seongjae Cho, In Man Kang, and Jong-Ho Lee
Journal of Nanoscience and Nanotechnology (October, 2019)
107. Deep Sub-60 mV/decade Subthreshold Swing in AlGaN/GaN FinMISHFETs with M-Plane Sidewall Channel
Quan Dai, Dong-Hyeok Son, Young Jun Yoon, Jeong-Gil Kim, Xiaoshi Jin, In-Man Kang, Dae-Hyun Kim, Yue Xu, Sorin Cristoloveanu, and Jung-Hee Lee
IEEE Transaction on Electron Devices (April, 2019)
106. Fabrication and Characterization of a Thin-Body Poly-Si 1T DRAM with Charge-Trap Effect
Jae Hwa Seo, Young Jun Yoon, Eunseon Yu, Wookyung Sun, Hyungsoon Shin, In Man Kang, Jong-Ho Lee, and Seongjae Cho
IEEE Electron Device Letters (April, 2019)
105. Design and analysis of logic inverter using antimonide-based compound semiconductor junctionless transistor
Min Su Cho, Young Jun Yoon, Seongjae Cho, and In Man Kang
Applied Physics A (March, 2019)
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