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[2025], [2024] ,[2023], [2022], [2021], [2020],  [2019], [2018], [2017], [2016], [2015], [2014], [2013], [2012], [2011], [2010], [2009], [2008], [2007], [~2006]

[2025]

218.  Design and analysis of 3D stacked nanosheet-based capacitorless DRAM with separated storage regions under process variations

     Soo Bean Song, Jin Park, Sang Ho Lee, Won Suk Koh, Gang San Yun, Kyeong Min Lim, Jaewon Jang, Jin‑Hyuk Bae, Young Jun Yoon,  In Man Kang

     Journal of Science: Advanced Materials and Devices (December,  2025)

217.  Investigating Quasi-Nonvolatile Memory Behavior in Junctionless Field-Effect Transistors with SOI-Like Structure

      Sang Ho Lee, Jin Park, Young Jun Yoon,  In Man Kang

      Silicon (November,  2025)

216.  Structural Optimization and Trap Effects on the Output  Performance of 4H-SiC Betavoltaic Cell

      Kyeong Min Kim, In Man Kang, Young Jun Yoon , Kibeom Kim,  Jae Hwa Seo

       Nanomaterials (October,  2025)

215. Impact of Grain Boundaries on Zero-Temperature Coefficient Characteristics in a 3D-Stacked Transistor

      Kyung Hee Kim , In Man Kang, Young Jun Yoon , Kibeom Kim

       Electronics (August,  2025)

214. Fabrication of AlGaN/GaN HEMT using TMAH pre-treatment and analysis of electrical characteristics by proton irradiation

       Jin Park, Sang Ho Lee, In Man Kang , and Young Jun Yoon

       Current Applied Physics  (July,  2025)

213. Optimization of One-transistor (1T) DRAM Using Device Parameters-dependent Zero-temperature Coefficient Point

      Kyung Hee Kim , Kyeong Min Kim, Yeong Hwan Kim, Jong Beom Im, Gyu Ho Choi, In Man Kang, Young Jun Yoon  

       Journal of Semiconductor Technology and Science (June,  2025)

212. Electrically and environmentally stable nitric acid-assisted SnO2 films for the active channel layer of thin-film transistors

       Yoonjin Cho, Sangwoo Lee, Seongwon Heo, Suhyeon Choi, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Won-Yong Lee, Jaewon Jang 

       Materials Today Advances  (June,  2025)

211. Design of a gate-all-around arch-shaped tunnel-field-effect-transistor-based capacitorless DRAM

       Seung Ji Bae, Sang Ho Lee, Jin Park, Min Seok Kim, Jeong Woo Hong, Won Suk Koh, Gang San Yun, Jaewon Jang, Jin‑Hyuk Bae, In Man Kang 

      Discover Nano  (April,  2025)

210. Enhancing the nonvolatile properties of sol-gel-processed Y2O3 RRAM devices by suppressing oxygen vacancy formation

       Sangwoo Lee, Yoonjin Cho, Seongwon Heo, Suhyeon Choi, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Won-Yong Lee, Jaewon Jang  

       Materials Science in Semiconductor Processing  (March,  2025)

209. Design and analysis of quasi-vertical multi-fin GaN power devices based on epitaxially grown GaN-on-sapphire

       Jeong Woo Hong, Sang Ho Lee, Jin Park, Min Seok Kim, Seung Ji Bae, Won Suk Koh, Gang San Yun, and In Man Kang

       Journal of Science: Advanced Materials and Devices (March,  2025)

208. Experimental and Simulation Study on the Electrical  Characteristics of Proton-irradiated AlGaN/GaN  HEMT

       So Ra Jeon , Sang Ho Lee, Jin Park, Min Seok Kim, Seung Ji Bae, Jeong Woo Hong, Won Suk Koh, Gang San Yun, In Man Kang, and Young Jun Yoon

       Journal of Semiconductor Technology and Science  (February,  2025)

207. Viable Approach of Tuning Oxide Semiconductor Thin Films in Solution-Processed Heterojunction Thin Films Transistors for Both Higher Performances and Stability

       Jun-Su Eun, Jinuk Lee, Jeong-Hyeon Na, Jun-Hyeong Park, Won Park, Junhao Feng, Kyung-Ho Seo, Jaewon Jang , In-Man Kang, Do-Kyung Kim and Jin-Hyuk Bae

       Advanced Electronic Materials (February,  2025)

206. Novel three-dimensional stacked capacitorless DRAM architecture using partially etched nanosheets for high-density memory applications

       Min Seok Kim, Sang Ho Lee, Jin Park, Seung Ji Bae, Jeong Woo Hong, Won Suk Koh, Gang San Yun, Jaewon Jang , Jin-Hyuk Bae, and In Man Kang

       Discover Nano (February,  2025)

[2024]

205. Complementary resistive switching characteristics of solid electrolyte chalcogenide AgXTe nanoparticles for high-density crossbar random access memory

       Won-Yong Lee, Yoonjin Cho, Sangwoo Lee, Kwangeun Kim, Jin-Hyuk Bae, In-Man Kang, Jaewon Jang 

       Materials Today Nano (December,  2024)

204. Statistical Analysis of Increased Immunity to Poly-Si Grain Boundaries in Nanosheet CMOS Logic Inverter Through Sheet Stacking

       Min Seok Kim, Sang Ho Lee, Jin Park, So Ra Jeon, Seung Ji Bae, Jeong Woo Hong, Jaewon Jang, Jin-Hyuk Bae, Young Jun Yoon, and In Man Kang

       Silicon (November,  2024)

203. Improving the Nonvolatile Memory Characteristics of Sol–Gel-Processed Y2O3 RRAM Devices Using Mono-Ethanolamine Additives

       Seongwon Heo, Soohyun Choi, Sangwoo Lee, Yoonjin Cho, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Won-Yong Lee,  Jaewon Jang 

       Materials (October,  2024)

202. Design Optimization of Capacitor-less DRAM using zero-temperature coefficient point

      Kyung Hee Kim , Kyeong Min Kim, Yeong Hwan Kim, Jong Beom Im, Gyu Ho Choi, In Man Kang, Young Jun Yoon  

       Journal of IKEEE (September,  2024)

201. Statistical analysis of vertically stacked nanosheet complementary FET based on polycrystalline silicon with multiple grain boundaries 

       Jin Park, Sang Ho Lee, So Ra Jeon, Min Seok Kim, Seung Ji Bae, Jeong Woo Hong, Gang San Yun, Won Suk Koh, Jaewon Jang, Jin-Hyuk bae, Young Jun Yoon, and In Man Kang

       Results in Physics (August,  2024)

200. Verifying the physical role of upper-active-layer on charge transport together with bias stability in bilayer-channel oxide thin-film transistors

       Jinuk Lee, Jun-Su Eun, Jeong-Hyeon Na,  Won Park, Jun-Hyeong Park, Junhao Feng,  Jaewon Jang, In Man Kang, Jaehoon Park, Xue Zhang, Do-Kyung Kim, and Jin-Hyuk Bae 

       Surface and Interfaces (August, 2024) 

199. UV/Ozone-Treated and Sol–Gel-Processed Y2O3 Insulators Prepared Using Gelation-Delaying Precursors

       Sangwoo Lee,   Yoonjin Cho, Seongwon Heo, Jin-Hyuk Bae, In Man Kang, Kwangeun Kim, Won-Yong Lee, and Jaewon Jang

       Nanomaterials (May, 2024)  

198. Fabrication of recessed-gate AlGaN/GaN MOSFETs using TMAH wet etching with Cu ion implantation

        Jun Hyeok Heo, Sang Ho Lee, Jin Park, Ga Eon Kang, Young Jun Yoon*, and In Man Kang*

        Results in Physics (May, 2024) 

197. Effect of Electrochemically Active Top Electrode Materials on Nanoionic Conductive Bridge Y2O3 Random-Access Memory

       Yoonjin Cho, Sangwoo Lee, Seongwon Heo, Jin-Hyuk Bae, In Man Kang, Kwangeun Kim, Won-Yong Lee, and Jaewon Jang

       Nanomaterials (March, 2024)  

196. Simulation of capacitorless DRAM based on polycrystalline silicon with a vertical underlap structure and a separated channel layer

       Seung Ji Bae, Sang Ho Lee, Jin Park, Ga Eon Kang, Jun Hyeok Heo, So Ra Jeon, Min Seok Kim, Jeong Woo Hong, Jaewon Jang, Jin-Hyuk bae, Sin-Hyung Lee, and In Man Kang

       Japanese Journal of Applied Physics (March, 2024)  

195. Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors 

       Jeong-Hyeon Na, Jun-Hyeong Park, Won Park, Junhao Feng, Jun-Su Eun, Jinuk Lee, Sin-Hyung Lee, Jaewon Jang , In Man Kang, Do-Kyung Kim, and Jin-Hyuk Bae 

       Nanomaterials (March, 2024) 

194. Bulk fin-type field-effect transistor-based capacitorless dynamic random-access memory with strong resistance to geometrical variations

        Min Seok Kim, Sang Ho Lee, Jin Park, Ga Eon Kang, Jun Hyeok Heo, So Ra Jeon, Seung Ji Bae, Jeong Woo Hong, Jaewon Jang, Jin-Hyuk bae, Sin-Hyung Lee, and In Man Kang

       Japanese Journal of Applied Physics (March, 2024)  

193. Formation of Cluster‐Structured Metallic Filaments in Organic Memristors for Wearable Neuromorphic Systems with Bio‐Mimetic Synaptic Weight Distributions

        Uihoon Jung, Miseong Kim, Jaewon Jang, Jin‐Hyuk Bae, In Man Kang, Sin‐Hyung Lee

        Advanced Science  (March, 2024) 

192. Capacitorless One-Transistor Dynamic Random-Access Memory with Novel Mechanism: Self-Refreshing

        Sang Ho Lee, Jin Park, Young Jun Yoon* and In Man Kang* 

        Nanomaterials (January, 2024)  

[2023]

191.Design of a Vertical Cylinder GaN Junctionless FET based on its GaN-on-GaN Substrate and Electrical Performance 

        So-Ra Jeon, Sang-Ho Lee, Jin Park, Ga-Eon Kang, Jun-Hyeok Heo, Min-Seok Kim, Seung-Ji Bae, Jeong-Woo Hong, and In-Man Kang

      Journal of Semiconductor Technology and Science  (December, 2023)

190.Sol–Gel-Processed Y2O3 Multilevel Resistive Random-Access Memory Cells for Neural Networks 

      Taehun Lee , Hae-In Kim, Yoonjin Cho, Sangwoo Lee, Won-Yong Lee, Jin-Hyuk Bae, In Man Kang, Kwangeun Kim, Sin-Hyung Lee, and Jaewon Jang 

      nanomaterials  (August, 2023)

189.One-Stop Strategy for Obtaining Controllable Sensitivity and Feasible Self-Patterning in Silver Nanowires/Elastomer Nanocomposite-Based Stretchable Ultrathin Strain Sensors

      Jinuk Lee, Jun-Ik Park, Sin-Hyung Lee, Jaewon Jang, In-Man Kang, Jaehoon Park, Xue Zhang, Do-Kyung Kim, and Jin-Hyuk Bae

       Biomacromolecules  (August, 2023)

188.Low-Temperature  Enhancement-Mode  Amorphous  Oxide Thin-Film  Transistors in Solution  Process Using a Low-Pressure  Annealing

      Won  Park,  JunHyeong  Park, JunSu Eun, Jinuk Lee, JeongHyeon  Na,  Sin-Hyung  Lee,  Jaewon  Jang, In  Man Kang, DoKyung  Kim, and  Jin-Hyuk Bae

      nanomaterials  (August, 2023)

187.Simulation of Capacitorless DRAM Based on the Polycrystalline Silicon Nanotube Structure with Multiple Grain Boundaries 

     Jin Park, Sang-Ho Lee , Ga-Eon Kang, Jun-Hyeok Heo, So-Ra Jeon, Min-Seok Kim, Seung-Ji Bae, Jeong-Woo Hong, Jae-won Jang , Jin-Hyuk Bae , Sin-Hyung Lee and In-Man Kang 

      nanomaterials  (July, 2023)

186.Organic Memristor-Based Flexible Neural Networks with Bio-Realistic Synaptic Plasticity for Complex Combinatorial Optimization

       Hyeongwook Kim, Miseong Kim, Aejin Lee, Hea-Lim Park, Jaewon Jang, Jin-Hyuk Bae, In Man Kang, Eun-Sol Kim, and Sin-Hyung Lee

       Advanced Science (July, 2023)

185.Improvement in Switching Characteristics and Bias Stability of Solution-Processed Zinc–Tin Oxide Thin Film Transistors via Simple Low-Pressure Thermal Annealing Treatment

      Junhao Feng , Sang-Hwa Jeon, Jaehoon Park, Sin-Hyung Lee, Jaewon Jang, In Man Kang,  Do-Kyung Kim, and Jin-Hyuk Bae

      nanomaterials (May, 2023)

184.Improved Negative Bias Stability of Sol–Gel-Processed SnO2 Thin-Film Transistors with Vertically Controlled Carrier Concentrations

       Taehun Lee, Kyoungdu Kim, Hae-In Kim, Sin-Hyung Lee, Jin-Hyuk Bae, In Man Kang, Won-Yong Lee, and Jaewon Jang

       ACS Applied Electronic Materials  (May, 2023)

183.Thickness dependence of resistive switching characteristics of the sol–gel processed Y2O3 RRAM devices

       Kyoungdu Kim, Hae-In Kim, Taehun Lee, Won-Yong Lee, Jin-Hyuk Bae, In Man Kang, Sin-Hyung Lee, Kwangeun Kim, and Jaewon Jang

       Semiconductor Science and Technology  (April, 2023)

182.Bulk-fin field-effect transistor-based capacitorless dynamic random-access memory and its immunity to the work-function variation effect 

       Sang Ho Lee, Jin Park, Geon Uk Kim, Ga Eon Kang, Jun Hyeok Heo, So Ra Jeon, Young Jun Yoon, Jae Hwa Seo, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee, and In Man Kang

        Japanese Journal of Applied Physics  (April, 2023)  (Spotlights 2022)

181.Analysis of Multiple Fin-type Vertical GaN Power Transistors based on Bulk GaN Substrates

       Jun Hyeok Heo, Sang Ho Lee, Jin Park, So Ra Min, Geon Uk Kim, Ga Eon Kang, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee, and In Man Kang

         Journal of Semiconductor Technology and Science (February, 2023)

180.Electrical Performance Depending on the Grain Boundary-location in the Multiple Nanosheet Tunneling Field-effect Transistor based on the Poly-Si

       Ga Eon Kang, Sang Ho Lee, Jin Park, So Ra Min, Geon Uk Kim, Jun Hyeok Heo, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee, and In Man Kang

         Journal of Semiconductor Technology and Science (February, 2023)

[2022]

179.Simulation of CMOS logic inverter based on vertically stacked polycrystalline silicon nanosheet gate-all-around MOSFET and its electrical characteristics 

       So Ra Min, Sang Ho Lee, Jin Park, Geon Uk Kim, Ga Eon Kang, Jun Hyeok Heo, Young Jun Yoon, Jae Hwa Seo, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee, In Man Kang

        Current Applied Physics  (November, 2022)

178.Analysis and Optimization for Characteristics of Vertical GaN Junctionless MOSFETs Depending on Specifications of GaN Substrates

       Hee Dae An, Sang Ho Lee, Jin Park, So Ra Min, Geon Uk Kim, Young Jun Yoon, Jae Hwa Seo, Min Su Cho, Jaewon Jang, Jin‑Hyuk Bae, Sin‑Hyung Lee, In Man Kang

        Journal of Electrical Engineering & Technology (November, 2022)

177.Organizing Reliable Polymer Electrode Lines in Flexible Neural Networks via Coffee Ring-Free Micromolding in Capillaries

       Min Woo Park, Do-Yun Kim, Ukju An, Jaewon Jang, Jin-Hyuk Bae, In Man Kang and Sin-Hyung Lee

        ACS Applied Materials & Interfaces  (October, 2022)

176.Design of a Capacitorless DRAM Based on Storage Layer Separated Using Separation Oxide and Polycrystalline Silicon

       Geon Uk Kim, Young Jun Yoon, Jae Hwa Seo, Sang Ho Lee, Jin Park, Ga Eon Kang, Jun Hyeok Heo, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee and In Man Kang

        Electronics  (October, 2022)

175.Physico-Chemical Origins of Electrical Characteristics and Instabilities in Solution-Processed ZnSnO Thin-Film Transistors

       Ziyuan Wang, Sang-Hwa Jeon, Yu-Jin Hwang, Sin-Hyung Lee, Jaewon Jang, In Man Kang, Do-Kyung Kim and Jin-Hyuk Bae

        coatings  (October, 2022)

174.Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped Structure

       Hee Dae An, Sang Ho Lee, Jin Park, So Ra Min, Geon Uk Kim, Young Jun Yoon, Jae Hwa Seo, Min Su Cho, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee and In Man Kang

        nanomaterials  (October, 2022)

173.Improved Environment Stability of Y2O3 RRAM Devices with Au Passivated Ag Top Electrodes

       Hae-In Kim, Taehun Lee, Won-Yong Lee, Kyoungdu Kim, Jin-Hyuk Bae, In-Man Kang, Sin-Hyung Lee, Kwangeun Kim and Jaewon Jang

        Materials  (October, 2022)

172.Importance of Structural Relaxation on the Electrical Characteristics and Bias Stability of Solution-Processed ZnSnO Thin-Film Transistors

       Yu-Jin Hwang, Do-Kyung Kim, Sang-Hwa Jeon, Ziyuan Wang, Jaehoon Park, Sin-Hyung Lee, Jaewon Jang, In Man Kang and Jin-Hyuk Bae

        nanomaterials  (September, 2022)

171.Systematic Engineering of Metal Ion Injection in Memristors for Complex Neuromorphic Computing with High Energy Efficiency

       Seong Eun Kim, Min-Hwi Kim, Jisu Jang, Hyungjin Kim, Sungjun Kim, Jaewon Jang, Jin-Hyuk Bae, In Man Kang, and Sin-Hyung Lee

       Advenced Intelligent Systems (September, 2022)

170.3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary’s influence

       Sang Ho Lee, Jin Park, So Ra Min, Geon Uk Kim, Jaewon Jang, Jin‑Hyuk Bae, Sin‑Hyung Lee, and In Man Kang

        Scientifc Reports  (August, 2022) 

169.Viable strategy to minimize trap states of patterned oxide thin films for both exceptional electrical performance and uniformity in sol–gel processed transistors

       Do-Kyung Kim, Kyeong-Ho Seo, Dae-Hyeon Kwon, Sang-Hwa Jeon, Yu-Jin Hwang, Ziyuan Wang, Jaehoon Park, Sin-Hyung Lee, Jaewon Jang , In Man Kang, Xue Zhang, Jin-Hyuk Bae

        Chemical Engineering Journal (August, 2022) 

168.Fabrication and Performances of Recessed Gate AlGaN/GaN MOSFETs with Si3N4/TiO2 Stacked Dual Gate Dielectric

       Hee Dae An, So Ra Min, Sang Ho Lee, Jin Park, Geon Uk Kim, Young Jun Yoon, Jae Hwa Seo, Min Su Cho, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee, and In Man Kang

         Journal of Semiconductor Technology and Science (April, 2022)

167.Room-Temperature High-Detectivity Flexible Near-Infrared Photodetectors with Chalcogenide Silver Telluride Nanoparticles

       Won-Yong Lee, Kyoungdu Kim, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang, Minsu Park, Kwangeun Kim, and Jaewon Jang

        ACS OMEGA (March, 2022)

166.Enhanced Switching Reliability of Sol–Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field

       Do-Won Kim , Hyeon-Joong Kim, Won-Yong Lee, Kyoungdu Kim, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim and Jaewon Jang  

        Materials (March, 2022)

165.Flexible Sol-Gel—Processed Y2O3 RRAM Devices Obtained via UV/Ozone-Assisted Photochemical Annealing Process

       Hyeon-Joong Kim, Do-Won Kim, Won-Yong Lee, Kyoungdu Kim, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang , Kwangeun Kim and Jaewon Jang  

        Materials (March, 2022)

164.Environmentally and Electrically Stable Sol−Gel-Deposited SnO2 Thin-Film Transistors with Controlled Passivation Layer Diffusion Penetration Depth That Minimizes Mobility Degradation

       Won-Yong Lee, Do Won Kim, Hyeon Joong Kim, Kyoungdu Kim, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, and Jaewon Jang

        ACS Applied Materials & Interfaces (March, 2022)

163.Enhanced switching ratio of sol–gel-processed Y2O3 RRAM device by suppressing oxygen vacancy formation at high annealing temperatures

       Kyoungdu Kim, Changmin Lee, Won-Yong Lee, Do Won Kim, Hyeon Joong Kim, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang and Jaewon Jang

        Semiconductor Science and Technology (January, 2022)

162.Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO2/Si3N4 Dual-Layer Insulator

       So-Ra Min, Min-Su Cho, Sang-Ho Lee, Jin Park, Hee-Dae An ,Geon-Uk Kim, Young-Jun Yoon, Jae-Hwa Seo, Jae-Won Jang, Jin-Hyuk Bae, Sin-Hyung Lee, and In-Man Kang 

        Materials (January, 2022)

[2021]

161.Electrical Performances of GaN-based Vertical Trench MOSFETs with Cylindrical and Hexagonal Structure

       Geon Uk Kim, Young Jun Yoon, Jae Hwa Seo, Min Su Cho, Sang Ho Lee, Jin Park, Hee Dae An, So Ra Min and In Man Kang

        Journal of Semiconductor Technology and Science (December, 2021)

160.Design and Analysis of DC/DC Boost Converter using Vertical GaN Power Device based on Epitaxially Grown GaN-on-sapphire

       Min Su Cho, Sang Ho Lee, Hee Dae An, Jin Park, So Ra Min, Geon Uk Kim, Young Jun Yoon, Jae Hwa Seo and In Man Kang

        Journal of Semiconductor Technology and Science (December, 2021)

159.Effect of Work-function Variation on Transfer Characteristics and Memory Performances for Gate-all-around JLFET based Capacitorless DRAM

       Sang Ho Lee, Young Jun Yoon, Jae Hwa Seo, Min Su Cho, Jin Park, Hee Dae An, So Ra Min, Geon Uk Kim and In Man Kang

        Journal of Semiconductor Technology and Science (December, 2021)

158.Fluoropolymer-based organic memristor with multifunctionality for flexible neural network system

       Min-Hwi Kim, Hea-Lim Park, Min-Hoi Kim,  Jaewon Jang, Jin-Hyuk Bae , In Man Kang and Sin-Hyung Lee

        npj Flexible Electronics (December, 2021)

157.Design of Capacitorless DRAM Based on Polycrystalline Silicon Nanotube Structure

       Jin Park, Min Su Cho, Sang Ho Lee, Hee Dae An, So Ra Min, Geon Uk Kim, Young Jun Yoon, Jae Hwa Seo, Sin-Hyung Lee, 

       Jaewon Jang,  Jin-Hyuk Bae , and In Man Kang

        IEEE Access (December, 2021)

156.Impact of process-dependent SiNx passivation on proton-induced degradation in GaN MIS-HEMTs

       Young Jun Yoon, Jae Sang Lee, In Man Kang, Eun Je Lee, Dong-Seok Kim

        Results in Physics (December, 2021)

155.Experimental and simulation study of power performance improvement of GaN PIN betavoltaic cell

       Dong-Seok Kim, Young Jun Yoon, Jae Sang Lee, In Man Kang, Jung-Hee Lee

        international journal of energy research (October, 2021)

154.Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-Treatment

       Young Jun Yoon, Jae Sang Lee, Jae Kwon Suk, In Man Kang, Jung Hee Lee, Eun Je Lee and Dong Seok Kim

        Micromachines (July, 2021)

153.Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors

       Hyeon-Joong Kim, Do-Won Kim , Won-Yong Lee, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang  and Jaewon Jang 

        Electronics (July, 2021)

152.Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance

       Do Won Kim, Hyeon Joong Kim, Changmin Lee, Kyoungdu Kim, Jin-Hyuk Bae, InMan Kang andJaewon Jang

        Electronics (January, 2021)

151.Extremely bias stress stable enhancement mode sol–gel-processed SnO2 thin-film transistors with Y2O3 passivation layers

       Chang min Lee, Won-Yong Lee, Do Won Kim, Hyeon Joong Kim, Jin-Hyuk Bae, In-Man Kang, Doohyeok Lim, Kwangeun Kim, Jaewon Jang

        Applied Surface Science (September, 2021)

150.Polycrystalline-Silicon-MOSFET-Based Capacitorless DRAM with Grain Boundaries and Its Performances

       Sang Ho Lee, Won Douk Jang, Young Jun Yoon, Hye Jin Mun, Min Su Cho, Jaewon Jang, Jin-Hyuk Bae and In Man Kang

        IEEE ACCESS (March, 2021)

149.Improving of Sensitivity of PbS Quantum Dot Based SWIR Photodetector Using P3HT

       Kyeong-Ho Seo , Jaewon Jang, In Man Kang and Jin-Hyuk Bae

        Materials (March, 2021)

148.Design optimization of GaN diode with p-GaN multi-well structure for high-efficiency betavoltaic cell

       Young Jun Yoon, Jae Sang Lee, In Man Kang, Jung-Hee Lee, Dong-Seok Kim

         Nuclear Engineering and Technology (April , 2021)

147.Single-event transient characteristics of vertical gate-all-around junctionless field-effect transistor on bulk substrate

       Young Jun Yoon, Jae Sang Lee, In Man Kang & Dong-Seok Kim

         Applied Physics A (January , 2021)

146.Design and optimization of GaN‐based betavoltaic cell for enhanced output power density

       Young Jun Yoon  Jae Sang Lee  In Man Kang  Jung‐Hee Lee  Dong‐Seok Kim

        International journal of energy research (January , 2021)

[2020]

145.One-Transistor Dynamic Random-Access Memory Based on Gate-All-Around Junction-Less Field-Effect Transistor with a Si/SiGe Heterostructure

       Young Jun Yoon, Jae Sang Lee, Dong-Seok Kim, Sang Ho Lee, In Man Kang

         Electronics (December , 2020)

144.Simulation of capacitorless dynamic random access memory based on junctionless FinFETs using grain boundary of polycrystalline silicon

       Min Su Cho, Hye Jin Mun, Sang Ho Lee, Jaewon Jang, Jin-Hyuk Bae, In Man Kang

        Applied Physics A (December , 2020)

143.Design and Analysis of Gallium Nitride-Based p-i-n Diode Structure for Betavoltaic Cell with Enhanced Output Power Density

       Young Jun Yoon, Jae Sang Lee, In Man Kang, Jung Hee Lee and Dong Seok Kim

        Micromachines (December , 2020)

142.Control of silver nanowire-elastomer nanocomposite networks through elaborate direct printing for ultrathin and stretchable strain sensors

       Jun-Ik Park, Do Kyung Kim, Jaewon Jang, In Man Kang, Hyeok Kim, Jaehoon Park, Il Woo Nam, Philippe Lang, Jin-Hyuk Bae

         Composites Science and Technology (November , 2020)

141.Improved negative bias stability of sol–gel processed Ti-doped SnO2 thin-film transistors

       Won-Yong Lee, Hyunjae Lee, Seunghyun Ha, Changmin Lee, Jin-Hyuk Bae, In-Man Kang and Jaewon Jang

         Semiconductor Science and Technology (November , 2020)

140.Design and Analysis of Metal-Oxide-Semiconductor Field-Effect Transistor-Based Capacitorless One-Transistor Embedded Dynamic Random-Access Memory with Double-Polysilicon Layer Using Grain Boundary for Hole Storage

       Won Douk Jang, Young Jun Yoon, Min Su Cho, Jun Hyeok Jung, Sang Ho Lee, Jaewon Jang, Jin-Hyuk Bae, and In Man Kang

        Journal of Nanoscience and Nanotechnology (November, 2020)

139.Analysis of Logic Inverter Based on Polycrystalline Silicon with Single Grain Boundary

       Hye Jin Mun, Min Su Cho, Jun Hyeok Jung, Won Douk Jang, Sang Ho Lee, Jaewon Jang, Jin-Hyuk Bae, and In Man Kang

       Journal of Nanoscience and Nanotechnology (November, 2020)

138.Analysis of CMOS Logic Inverter Based on Gate-All-Around Field-Effect Transistors with theStrained-Silicon Layer for Improving the Switching Performances

       Sang Ho Lee, Min Su Cho, Jun Hyeok Jung, Won Douk Jang, Hye Jin Mun, Jaewon Jang, Jin-Hyuk Bae, and In Man Kang    

        Journal of Nanoscience and Nanotechnology (November, 2020)

137.Effect of High-Speed Blade Coating on Electrical Characteristics in Polymer Based Transistors 

       Jun-Ik Park, Hyun Seok Jeong , Premkumar Vincent, Jihwan Park, Do Kyung Kim, Jaewon Jang , In Man Kang, Hyeok Kim, Yun Hi Kim, Philippe Lang, and Jin-Hyuk Bae 

       Journal of Nanoscience and Nanotechnology (September , 2020)

136.Gallium Nitride Normally Off MOSFET Using Dual-Metal-Gate Structure for the Improvement in Current Drivability

       Young Jun Yoon, Jae Sang Lee, Dong-Seok Kim, Jung-Hee Lee and In Man Kang

        Electronics (August, 2020)

135.Theoretical Analysis of Prospects of Organic Photovoltaics as a Multi-Functional Solar Cell and Laser Power Converter for Wireless Power Transfer

       Premkumar Vincent, Jaewon Jang, In Man Kang, Philippe Lang, Hyeok Kim, and Jin-Hyuk Bae

       Journal of Nanoscience and Nanotechnology (August, 2020)

134.Recessed-Gate GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor Using a Dual Gate-Insulator Employing TiO2/SiN

       Jun Hyeok Jung, Min Su Cho, Won Douk Jang, Sang Ho Lee, Jaewon Jang, Jin-Hyuk Bae, and In Man Kang

       Journal of Nanoscience and Nanotechnology (August, 2020)

133. Charge Based Current–Voltage Model for the Silicon on Insulator Junctionless Field-Effect Transistor

       Yongjin Jeong, In Man Kang, Seongjae Cho, Jisun Park∗ and Hyungsoon Shin

        Journal of Nanoscience and Nanotechnologys (August, 2020)

132.Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance

       MIN SU CHO , JAE HWA SEO, SANG HO LEE , HWAN SOO JANG, AND IN MAN KANG

        IEEE Access (July, 2020)

131.Expeditious and eco-friendly solution-free self-patterning of sol–geloxide semiconductor thinfilms

       Do-Kyung Kim, Jun-Ik Park, Jaewon Jang, In Man Kang, Jaehoon Park, Jin-Hyuk Bae

        MATERIALS & DESIGN (July, 2020)

130.Enhancement mode Flexible SnO2 Thin Film Transistors via a UV/Ozone Assisted Sol-Gel Approach

       BONGHO JANG , HONGKI KANG , WON-YONG LEE , JIN-HYUK BAE , IN-MAN KANG , KWANGEUN KIM , HYUK-JUN KWON, JAEWON JANG 

        IEEE Access (July, 2020)

129.High performance of solution-processed SnO2 thin-film transistors by promotion of photo-exposure time-dependent carrier transport during the pre-annealing stage

       Jun-Ik Park, Do-Kyung Kim, Hyunjae Lee, Jaewon Jang, Jihwan Park, Hyeok Kim, Philippe Lang, In Man Kang and Jin-Hyuk Bae

        Semiconductor Science and Technology (May, 2020)

128.Application of Genetic Algorithm for More Efficient Multi-Layer Thickness Optimization in Solar Cells

       Premkumar Vincent , Gwenaelle Cunha Sergio , Jaewon Jang , In Man Kang , Jaehoon Park , Hyeok Kim , Minho Lee and Jin-Hyuk Bae

        Energies (April, 2020)

127.Effects of Contact Potential and Sidewall Surface Plane on the Performance of GaN Vertical Nanowire MOSFETs for Low-Voltage Operation

       Dong-Hyeok Son, Terirama Thingujam , Jeong-Gil Kim, Dae-Hyun Kim , In Man Kang , Ki-Sik Im, Christoforos Theodorou , Gerard Ghibaudo , Sorin Cristoloveanu , and Jung-Hee Lee

         IEEE Transactions on Electron Devices (April , 2020)

126.Effect of Mg Doping on the Electrical Performance of a Sol-Gel-Processed SnO2 Thin-Film Transistor

       Won-Yong Lee, Hyunjae Lee, Seunghyun Ha, Changmin Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim  and Jaewon Jang

       Electronics (March, 2020)

125.Fabrication of AlGaN/GaN MISHEMT with dual‑metal gate electrode and its performances

       Jun Hyeok Jung, Min Su Cho, Won Douk Jang, Sang Ho Lee, Jaewon Jang, Jin‑Hyuk Bae, Young Jun Yoon,  In Man Kang

       Applied Physics A (March, 2020)

124.Contact line curvature-induced molecular misorientation of a surface energy patterned organic semiconductor in meniscus-guided coating

       Do-Kyung Kim, Premkumar Vincent, Jaewon Jang, In Man Kang, Hyeok Kim, Philippe Lang, Muhan Choi, Jin-Hyuk Bae

        Applied Surface Science (February, 2020)

123. Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM

       Hyeonjeong Kim, Songyi Yoo, In-Man Kang, Seongjae Cho, Wookyung Sun* and Hyungsoon Shin

     Micromachines (February, 2020)

122. Sol-gel Processed Yttrium-doped SnO2 Thin Film Transistors

       Changmin Lee , Won-Yong Lee, Hyunjae Lee, Seunghyun Ha, Jin-Hyuk Bae, In-Man Kang, Hongki Kang, Kwangeun Kim and Jaewon Jang 

     Electronics (February, 2020)

121. Polycrystalline silicon metal-oxide-semiconductor field-effect transistor-based stacked multi-layer one-transistor dynamic random-access memory with double-gate structure for the embedded systems

       Won Douk Jang, Young Jun Yoon, Min Su Cho, Jun Hyeok Jung, Sang Ho Lee, Jaewon Jang, Jin-Hyuk Bae and In Man Kang

     Japanese Journal of Applied Physics (January, 2020)

120. Numerical Analysis on Effective Mass and Traps Density Dependence of Electrical Characteristics of a-IGZO Thin-Film Transistors

       Jihwan Park, Do-Kyung Kim, Jun-Ik Park, In Man Kang, Jaewon Jang, Hyeok Kim, Philippe Lang and Jin-Hyuk Bae

     Electronics (January, 2020)

[2019]

113. Effect of Interface Traps on the Device Performance of InGaAs-Based Gate-All-Around Tunneling Field Effect Transistors

       Won Douk Jang, Young Jun Yoon, Min Su Cho, Bo Gyeong Kim, and In Man Kang

      Journal of Nanoscience and Nanotechnology (October, 2019)

112. Analysis of Electrical Characteristics of InAlGaN/GaN-Based High Electron Mobility Transistors with AlGaN Back Barriers

       Jun Hyeok Jung, Young Jun Yoon, Min Su Cho, Bo Gyeong Kim, Won Douk Jang, and In Man Kang

      Journal of Nanoscience and Nanotechnology (October, 2019)

111. Design Optimization of InGaAs/GaAsSb-Based P-Type Gate-All-Around Arch-Shaped Tunneling Field-Effect Transistor

       Bo Gyeong Kim, Jae Hwa Seo, Young Jun Yoon, Min Su Cho, and In Man Kang

      Journal of Nanoscience and Nanotechnology (October, 2019)

110. Simulation for Electrical Performances of the Capacitorless Dynamic Random Access Memory Based on Junctionless FinFETs

       Min Su Cho, Young Jun Yoon, Bo Gyeong Kim, Jun Hyeok Jung, Won Douk Jang, Jung-Hee Lee, and In Man Kang

      Journal of Nanoscience and Nanotechnology (October, 2019)

109. Capatitorless One-Transistor Dynamic Random-Access Memory Based on Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor with Si/SiGe Heterojunction and Underlap Structure for Improvement of Sensing Margin and Retention Time

       Young Jun Yoon, Min Su Cho, Bo Gyeong Kim, Jae Hwa Seo, and In Man Kang

      Journal of Nanoscience and Nanotechnology (October, 2019)

98. Capacitorless one-transistor dynamic random-access memory based on asymmetric double-gate Ge/GaAs-heterojunction tunneling field-effect transistor with n-doped boosting layer and drain-underlap structure

     Young Jun Yoon, Jae Hwa Seo and In Man Kang

      Japanese Journal of Applied Physics (April, 2018)

97. Normally-off AlGaN/GaN-based MOS-HEMT with self-terminating TMAH wet recess etching

      Dong-Hyeok Son, Young-Woo Jo, Chul-Ho Won, Jun-Hyeok Lee, Jae Hwa Seo, Sang-Heung Lee, Jong-Won Lim, Ji Heon Kim, In Man Kang, Sorin Cristoloveanu, and Jung-Hee Lee

      Solid-State Electronics (March, 2018)

[2017]

96. Analysis of Source-to-Drain Capacitance Components in Tunneling Field-Effect Transistors

       Lee, Sang Hyuk; Kang, In Man

      Journal of Nanoelectronics and Optoelectronics(November, 2017)

95. Performance enhancement of AlGaN/GaN nanochannel omega-FinFET

      Ki-SikIm, Jae HwaSeo, Sindhuri Vodapally, In ManKang, Jae-Hoon Lee, Sorin Cristoloveanu and Jung-Hee Lee

      Solid-State Electronics (March  , 2017)

94. Electrical Characteristics of Tunneling Field-effect Transistors using Vertical Tunneling Operation Based on AlGaSb/InGaAs

      Bo Gyeong Kim, Ra Hee Kwon, Jae Hwa Seo, Young Jun Yoon, Young In Jang, Min Su Cho, Jung-Hee Lee, Seongjae Cho and In Man Kang

      Journal of Electrical Engineering & Technology (November, 2017)

93. Design Optimization and Analysis of InGaAs-Based Gate-All-Around (GAA) Junctionless Field-Effect Transistor (JLFET)

      Jae Hwa Seo, Young Jun Yoon, Jung-Hee Lee and In Man Kang

      Journal of Nanoscience and Nanotechnology (November, 2017)