Embedded Files
[2016]
71. Fabrication of GaN-based Fin-type HEMT and Its Electrical Performances which Applicable for Green-energy Automobile Power Applications
Jae Hwa Seo, Young Jun Yoon, Hwan Gi Lee and In Man Kang
The 6th International Conference on Power and Energy Systems (November, 2016)
70. Impact of Source-connected Field-plate Structure on Switching performance of GaN-based Recessed-gate MOSFETs for High-voltage and High-switching System
Young Jun Yoon, Jae Hwa Seo, Hwan Gi Lee and In Man Kang
The 6th International Conference on Power and Energy Systems (November, 2016)
69. Capacitorless 1T-DRAM Based on Double-Gate GaAs Junctionless Transistor
Young Jun Yoon, Jae Hwa Seo, Young In Jang, Min Su Cho, Jung-Hee Lee and In Man Kang
The 29th International Microprocesses and Nanotechnology Conference (November, 2016)
68. Effect of Interface Traps on the Device Performances of the Tunneling Field-Effect Transistors Based on InGaAs
Ra Hee Kwon, Young Jun Yoon, Jae Hwa Seo, Young In Jang, Min Su Cho, Jung-Hee Lee, and In Man Kang
The 2016 International Conference on Solid State Devices and Materials (September, 2016)
67. Desing and Analysis of Logic Inverter Using Antimony-based Compound Semiconductor Junctionless Transistor
Min Su Cho, Jae Hwa Seo, Young Jun Yoon, Ra Hee Kwon, Young In Jang, Chul-Ho Won, Jeong-Gil Kim, Jung-Hee Lee, Seongjae Cho, and In Man Kang
The 14th International Nanotech Symposium & Nano-Convergence Expo (July, 2016)
66. Electrical Performance of InN/GaN-based Tunneling Field-effect Transistor with Subthrethold Swing below 60 mV/decade
Ra Hee Kwon, Jae Hwa Seo, Young Jun Yoon, Young In Jang, Min Su Cho, Seongjae Cho, Jung-Hee Lee, and In Man Kang
The 14th International Nanotech Symposium & Nano-Convergence Expo (July, 2016)
65. Design Optimization and Analysis of InGaAs-based Gate-All-Around (GAA) Junctionless Field-Effect Transistor
Jae Hwa Seo, Young Jun Yoon, Jung-Hee Lee, Hyuck-In Kwon, and In Man Kang
The 14th International Nanotech Symposium & Nano-Convergence Expo (July, 2016)
64. Effect of electric fringe-field on low-power and radio-frequency performance of sub-10 nm junctionless transistors with hetero-dieletric spacer structure
Young Jun Yoon, Jae Hwa Seo, Min Su Cho, Seongjae Cho, and In Man Kang
The 14th International Nanotech Symposium & Nano-Convergence Expo (July, 2016)
63. InGaAs-based Tunneling Field-Effect Transistor with Stacked Dual-Metal-Gate with PNPN Structure for High Performance
Ra Hee Kwon , Young Jun Yoon, Jae Hwa Seo, Young In Jang, Min Su Jo, and In Man Kang
2016 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (July, 2016)
62. Design and Analysis of Fin-type AlGaN/GaN MIS-HEMTs using Dual-Metal-Gate (DMG) structure
Young In Jang , Young Jun Yoon, Jae Hwa Seo, Ra Hee Kwon, Min Su Jo, and In Man Kang
2016 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (July, 2016)
61. InGaAs-based Junctionless Transistor with Dualspacer Dielectric for Low Power Loss and High Frequency Mobile Network System
Young Jun Yoon, Jae Hwa Seo, Ra Hee Kwon, Young In Jang, and In Man Kang
The 30th International Conference on Information Networking (January, 2016)
60. Design Optimization of Si/Ge-based Heterojunction Arch-shaped Gate-All-Around (GAA) Tunneling Field-Effect Transistor (TFET) which Applicable for future Mobile Communication Systems
Jae Hwa Seo, Young Jun Yoon, Ra Hee Kwon, Young In Jang, and In Man Kang
The 30th International Conference on Information Networking (January, 2016)
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