journal2024

[2024]

205. Complementary resistive switching characteristics of solid electrolyte chalcogenide AgXTe nanoparticles for high-density crossbar random access memory

       Won-Yong Lee, Yoonjin Cho, Sangwoo Lee, Kwangeun Kim, Jin-Hyuk Bae, In-Man Kang, Jaewon Jang 

       Materials Today Nano (December,  2024)

204. Statistical Analysis of Increased Immunity to Poly-Si Grain Boundaries in Nanosheet CMOS Logic Inverter Through Sheet Stacking

       Min Seok Kim, Sang Ho Lee, Jin Park, So Ra Jeon, Seung Ji Bae, Jeong Woo Hong, Jaewon Jang, Jin-Hyuk Bae, Young Jun Yoon, and In Man Kang

       Silicon (November,  2024)

203. Improving the Nonvolatile Memory Characteristics of Sol–Gel-Processed Y2O3 RRAM Devices Using Mono-Ethanolamine Additives

       Seongwon Heo, Soohyun Choi, Sangwoo Lee, Yoonjin Cho, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Won-Yong Lee,  Jaewon Jang 

       Materials (October,  2024)

202. Design Optimization of Capacitor-less DRAM using zero-temperature coefficient point

      Kyung Hee Kim , Kyeong Min Kim, Yeong Hwan Kim, Jong Beom Im, Gyu Ho Choi, In Man Kang, Young Jun Yoon  

       Journal of IKEEE (September,  2024)

201. Statistical analysis of vertically stacked nanosheet complementary FET based on polycrystalline silicon with multiple grain boundaries 

         Jin Park, Sang Ho Lee, So Ra Jeon, Min Seok Kim, Seung Ji Bae, Jeong Woo Hong, Gang San Yun, Won Suk Koh, Jaewon Jang, Jin-Hyuk bae, Young Jun Yoon, and In Man Kang

       Results in Physics (August,  2024)

200. Verifying the physical role of upper-active-layer on charge transport together with bias stability in bilayer-channel oxide thin-film transistors

       Jinuk Lee, Jun-Su Eun, Jeong-Hyeon Na,  Won Park, Jun-Hyeong Park, Junhao Feng,  Jaewon Jang, In Man Kang, Jaehoon Park, Xue Zhang, Do-Kyung Kim, and Jin-Hyuk Bae 

       Surface and Interfaces (August, 2024) 

199. UV/Ozone-Treated and Sol–Gel-Processed Y2O3 Insulators Prepared Using Gelation-Delaying Precursors

       Sangwoo Lee,   Yoonjin Cho, Seongwon Heo, Jin-Hyuk Bae, In Man Kang, Kwangeun Kim, Won-Yong Lee, and Jaewon Jang

       Nanomaterials (May, 2024)  

198. Fabrication of recessed-gate AlGaN/GaN MOSFETs using TMAH wet etching with Cu ion implantation

        Jun Hyeok Heo, Sang Ho Lee, Jin Park, Ga Eon Kang, Young Jun Yoon*, and In Man Kang*

        Results in Physics (May, 2024)  

197. Effect of Electrochemically Active Top Electrode Materials on Nanoionic Conductive Bridge Y2O3 Random-Access Memory

       Yoonjin Cho, Sangwoo Lee, Seongwon Heo, Jin-Hyuk Bae, In Man Kang, Kwangeun Kim, Won-Yong Lee, and Jaewon Jang

       Nanomaterials (March, 2024)  

196. Simulation of capacitorless DRAM based on polycrystalline silicon with a vertical underlap structure and a separated channel layer

       Seung Ji Bae, Sang Ho Lee, Jin Park, Ga Eon Kang, Jun Hyeok Heo, So Ra Jeon, Min Seok Kim, Jeong Woo Hong, Jaewon Jang, Jin-Hyuk bae, Sin-Hyung Lee, and In Man Kang

       Japanese Journal of Applied Physics (March, 2024)  

195. Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors 

       Jeong-Hyeon Na, Jun-Hyeong Park, Won Park, Junhao Feng, Jun-Su Eun, Jinuk Lee, Sin-Hyung Lee, Jaewon Jang , In Man Kang, Do-Kyung Kim, and Jin-Hyuk Bae 

       Nanomaterials (March, 2024) 

194. Bulk fin-type field-effect transistor-based capacitorless dynamic random-access memory with strong resistance to geometrical variations

        Min Seok Kim, Sang Ho Lee, Jin Park, Ga Eon Kang, Jun Hyeok Heo, So Ra Jeon, Seung Ji Bae, Jeong Woo Hong, Jaewon Jang, Jin-Hyuk bae, Sin-Hyung Lee, and In Man Kang

       Japanese Journal of Applied Physics (March, 2024)  

193. Formation of Cluster‐Structured Metallic Filaments in Organic Memristors for Wearable Neuromorphic Systems with Bio‐Mimetic Synaptic Weight Distributions

        Uihoon Jung, Miseong Kim, Jaewon Jang, Jin‐Hyuk Bae, In Man Kang, Sin‐Hyung Lee

        Advanced Science  (March, 2024)  

192. Capacitorless One-Transistor Dynamic Random-Access Memory with Novel Mechanism: Self-Refreshing

        Sang Ho Lee, Jin Park, Young Jun Yoon* and In Man Kang*

        Nanomaterials (January, 2024)