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[2015]

73. Effects of Sidewall MOS channel on performance of AlGaN/GaN FinFET

Dong-Hyeok Son, Young-Woo Jo, V.Sindhuri, Ki-Sik Im, Jae Hwa Seo, Yong Tae Kim, In Man Kang, Sori Cristoloveanu, Maryline Bawedin and Jung-Hee Lee

Microelectronic Engineering (November, 2015)

72. Design and Analysis of Gate-recessed AlGaN/GaN Fin-type Field-Effect Transistor

Young In Jang, Jae Hwa Seo, Young Jun Yoon, Hye Rim Eun, Ra Hee Kwon, Jung-Hee Lee, Hyuck-In Kwon and In Man Kang

Journal of Semiconductor Technology and Science (October, 2015)

71. Short-Channel Tunneling Field-Effect Transistor with Drain-Overlap and Dual-Metal Gate Structure for Low-Power and High-Speed Operations

Young Jun Yoon, Hye Rim Eun, Jae Hwa Seo, Hee-Sung Kang, Seong Min Lee, Jeongmin Lee, Seongjae Cho, Heung-Sik Tae, Jung-Hee Lee and In Man Kang

Journal of Nanoscience and Nanotechnology (October, 2015)

70. Design and Analysis of CMOS-Compatible III-V Compound Electron-Hole Bilayer Tunneling Field-Effect Transistor for Ultra-Low-Power Applications

Sung Yoon Kim, Jae Hwa Seo, Young Jun Yoon, Ho-Young Lee, Seong Min Lee, Seongjae Cho and In Man Kang

Journal of Nanoscience and Nanotechnology (October, 2015)

69. Analysis on RF Performance of Silicon-Compatible InGaAs-Based Planar-Type and Fin-Type Junctionless Field-Effect Transistors

Jae Hwa Seo, Young Jun Yoon, Seongjae Cho, Heung-Sik Tae, Jung-Hee Lee and In Man Kang

Journal of Nanoscience and Nanotechnology (October, 2015)

68. AlGaN/GaN FinFET With Extremely Broad Transconductance by Side-Wall Wet Etch

Young-woo Jo, Dong-Hyeok Son, Chul-Ho Won, Ki-Sik Im, Jae Hwa Seo, In Man Kang, and Jung-Hee LEe

IEEE Electron Device Letteres (October, 2015)

67. Suppresion of Current collapse in AlGaN/GaN MISHFET with Carbon-doped GaN/undoped GaN Multilayered buffer structure

Hee-Sung Kang, Chul-Ho Won, Young-Jo Kim, Dong-Seok Kim, Young Jun Yoon, In Man Kang, Yong Soo Lee and Jung-Hee Lee

Physica status solidi (a) (May, 2015)

66. Characteristics of Temperature Rise in Variable Inductor Employing Magnetorheological Fluid Driven by a High-Frequency Pulsed Voltage Source

Ho Young Lee, In Man Kang, Chae-Hwa Shon and Se-Hee Lee

Journal of Applied Physics (May, 2015)

65. Electrical Characteristics of Enhancement-Mode n-Channel Vertical GaN MOSFETs and the Effects of Sidewall Slope

Sung Yoon Kim, Jae Hwa Seo, Young Jun Yoon, Jin Su Kim, Seongjae Cho, Jung-Hee Lee and In Man Kang

Journal of Electrical Engineering Technology (May, 2015)

64. Design and analysis of Si-based arch-shaped gate-all-around (GAA) tunneling field-effect transistor (TFET)

Jae Hwa Seo, Young Jun Yoon, Seongmin Lee, Jung-Hee Lee, Seongjae Cho and In Man Kang

Current Applied Physics (March, 2015)

63. Growth and characterization of simulating carbon-doped/undoped GaN multiple-layer buffer

Dong-Seok Kim, Chul-Ho Won, Hee-Sung Kang, Young-Jo Kim, Yong Tae Kim, In Man Kang and Jung-Hee Lee

Semiconductor Science and Technology (March, 2015)

62. High-performance Ge/GaAs heterojunction tunneling FET with a channel engineering for sub-0.5V operation

Jin Su Kim, Young Jun Yoon, Jae Hwa Seo, Young In Jang, Jung-Hee Lee, Seongjae Cho, Gwan Min Yoo and In Man Kang

Semiconductor Science and Technology (March, 2015)

61. Electrohydrodynamic Analysis of Dielectric Guide Flow Due to Surface Charge Density Effects in Breakdown Region

Ho Young Lee, In Man Kang and Se-Hee Lee

Journal of Electrical Engineering Technology (March, 2015)

60. Effect of Ga fraction in InGaAs channel on performances of gate-all-around tunneling field-effect transistor

Young Jae Kim, Young Jun Yoon, Jae Hwa Seo, Ssung Min Lee, Seongjae Cho, Jung-Hee Lee and In Man Kang

Semiconductor Science and Technology (January, 2015)