110. Effect of Work Function Variation of Transfer Characteristics and Memory Performances in Gate-All-Around JLFET
Sang Ho Lee, Young Jun Yoon, Jae Hwa Seo, Min Su Cho, Jin Park, Hee Dae An, So Ra Min, Geon Uk Kim, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee and In Man Kang
AWAD (August, 2021)
109.Design and Analysis of DC/DC Boost Converter Using Vertical GaN Power Device based on GaN-on-Sapphire epitaxial
Min Su Cho, Young Jun Yoon, Jae Hwa Seo, Sang Ho Lee, Jin Park, Hee Dae An, So Ra Min, Geon Uk Kim, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee and In Man Kang
AWAD (August, 2021)
108. Electrical Performance of Vertical GaN-based Trench MOSFETs with Cylindrical and Hexagonal Structure
Geon Uk Kim, Young Jun Yoon, Jae Hwa Seo, Min Su Cho, Sang Ho Lee, Jin Park, Hee Dae An, So Ra Min, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee and In Man Kang
AWAD (August, 2021)
107. Analysis of Recessed-gate GaN MIS-HEMTs using Dual Dielectrics with Si3N4 and TiO2
Yun Hwan Kim, Min Su Cho, Sang Ho Lee, Jin Park, Hee Dae An, So Ra Min, Young Jun Yoon, Jae Hwa Seo, Jaewon Jang, Jin Hyuk Bae, and In Man Kang
제28회 한국반도체학술대회 (February, 2021)
106. Analysis of RF Performances in Recessed-Gate Based GaN MIS-HEMTs Using a Dual Gate-Insulator
So Ra Min, Min Su Cho, Sang Ho Lee, Jin Park, Hee Dae An, So Ra Min, Young Jun Yoon, Jae Hwa Seo, Jaewon Jang, Jin Hyuk Bae, and In Man Kang
제28회 한국반도체학술대회 (February, 2021)