conference2018
[2018]
86. Effect of Interface Traps on the Device Performances of InGaAs-Based Gate-All-Around Tunneling Field-Effect Transistors
Won Douk Jang, Bo Gyeong Kim, Young Jun Yoon, Min Su Cho, and In Man Kang
The 16th International Nanotech Symposium & Nano-Convergence Expo (July, 2018)
85. Analysis of Electrical Characteristics for InAlGaN/GaN High Electron Mobility Transistors with Various Back Barriers
Jun Hyeok Jung, Young Jun Yoon, Min Su Cho, Bo Gyeong Kim, Won Douk Jang, Jin Sub Kim, and In Man Kang
The 16th International Nanotech Symposium & Nano-Convergence Expo (July, 2018)
84. Simulation for Electrical Performances of the Capacitorless Dynamic Random Access Memory based on Junctionless FinFET
Min Su Cho, Young Jun Yoon, Bo Gyeong Kim, Jun Hyeok Jung, Won Douk Jang, Jin Sub Kim, and In Man Kang
The 16th International Nanotech Symposium & Nano-Convergence Expo (July, 2018)
83. Capacitorless 1T-DRAM based on double-gate MOSFET with Si/SiGe heterojunction and underlap structure for improvement of sensing margin and retention time
Young Jun Yoon, Min Su Cho, Bo Gyeong Kim, Jae Hwa Seo, and In Man Kang
The 16th International Nanotech Symposium & Nano-Convergence Expo (July, 2018)
82. Polycrystalline Silicon MOSFET-based capacitorless one-transistor dynamic random-access memory with asymmetric double-gate structure
Young Jun Yoon, Bo Gyeong Kim, Min Su Cho, Jae Hwa Seo, Seongjae Cho ,and In Man Kang
2018 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (July, 2018)
81. Design Optimization of InGaAs/GaAsSb-based P-type Gate-All-Around Arch-shaped Tunneling Field-Effect Transisistor
Bo Gyeong Kim, Jae Hwa Seo, Young Jun Yoon, Min Su Cho, and In Man Kang
제25회 한국반도체학술대회 (February, 2018)
80. AlGaN/GaN Fin-HEMT with sub-100 nm T-gate: Optimization and modeling in RF regime
Jae Hwa Seo, Young Jun Yoon, Min Su Cho, and In Man Kang
제25회 한국반도체학술대회 (February, 2018)
79. Design Optimization of InGaAs/GaAsSb-based Heterojunction Gate-All-Around (GAA) Arch-Shaped Tunneling Field-Effect Transistor (A-TFET)
Jae Hwa Seo, Young Jun Yoon, Hwan Gi Lee, and In Man Kang
International Conference on Electronics, Information and Communication (January, 2018)