Embedded Files
년도별 보기 (해당 년도 클릭)
[2025],[2024],[2023],[2022],[2021],[2020], [2019], [2018], [2017], [2016], [2015], [2014], [2013], [2012], [2011]
130. 3D Stacked Nanosheets-Based Capacitorless DRAM with seperated storage regions
Soo Bean Song, Jin Park, Gang San Yun, Won Suk Koh, Kyeong Min Lim, and In Man Kang
AWAD (July, 2025)
129. Fabrication of AlGaN/GaN HEMT with Post Metal Annealing and its Electrical Characterisitics by Proton Irradiation
Jin Park, Sang Ho Lee, Min Seok Kim, Seung Ji Bae, Jeong Woo Hong, Gang San Yun, Won Suk Koh, Young Jun Yoon, and In Man Kang
제32회 한국반도체학술대회 (February, 2025)
128. Simulation on the Electrical Characteristics of Proton-Irradiated AlGaN/GaN HEMT After Hydrogen Passivation
Gang San Yun, Sang Ho Lee, Jin Park, Min Seok Kim, Seung Ji Bae, Jeong Woo Hong, Won Suk Koh, Young Jun Yoon, and In Man Kang
제32회 한국반도체학술대회 (February, 2025)
127. Simulation of capacitorless dynamic random-access memory based on GAA JLFET with vertically stacked storage layer and underlapped gate structure
Won Suk Koh, Sang Ho Lee, Jin Park, Min Seok Kim, Seung Ji Bae, Jeong Woo Hong, Gang San Yun, and In Man Kang
제32회 한국반도체학술대회 (February, 2025)
126. Analysis of Proton Irradiation Reliability on AlGaN/GaN HEMT
So Ra Jeon, Sang Ho Lee, Jin Park, Min Seok Kim, Seung Ji Bae, Jeong Woo Hong, Won Suk Koh, Gang San Yun, In Man Kang, and Young Jun Yoon
AWAD (July, 2024)
125. TMAH 기반 전처리를 이용한 AlGaN/GaN HEMT의 양성자 조사에 대한 전기적 특성 분석
Jin Park, Sang Ho Lee, In Man Kang, and Young Jun Yoon
2024 하계종합학술대회 (June, 2024)
124. Design and Analysis of Multiple Fin-type Vertical GaN Power Device based on Epitaxially Grown GaN-on-sapphire
Jeong Woo Hong, Sang Ho Lee, Jin Park, Ga Eon Kang, Jun Hyeok Heo, So Ra Jeon, Min Seok Kim, Seung Ji Bae, and In Man Kang
제31회 한국반도체학술대회 (January, 2024)
123. A Novel Capacitorless 1T DRAM with Self-Refresh Mechanism
Sang Ho Lee, Jin Park, Ga Eon Kang, Jun Hyeok Heo, So Ra Jeon, Min Seok Kim, Seung Ji Bae, Jeong Woo Hong, and In Man Kang
제31회 한국반도체학술대회 (January, 2024)
122.Effect of Geometrical Variations on Bulk FinFET-Based Capacitorless DRAM
Min Seok Kim, Sang Ho Lee, Jin Park, Ga Eon Kang, Jun Hyeok Heo, So Ra Jeon, Jeong Woo Hong, Seung Ji Bae, In Man Kang
International Conference on Solid State Devices and Materials (September, 2023)
121. Capacitorless DRAM Based on Polycrystalline-Silicon with a Separated Channel Layer and a Fin-Shaped Storage Layer
Seung Ji Bae, Sang Ho Lee, Jin Park, Ga Eon Kang, Jun Hyeok Heo, So Ra Jeon, Min Seok Kim, Jeong Woo Hong, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee, In Man Kang
International Conference on Solid State Devices and Materials (September, 2023)
120. Design of the vertical cylinder-type GaN Junctionless FET based on GaN-on-GaN Substrate and its electrical performances
So Ra Jeon, Sang Ho Lee, Jin Park, Ga Eon Kang, Jun Hyeok Heo, Min Seok Kim, Seung Ji Bae, Jeong Woo Hong, and In Man Kang
AWAD (July, 2023)
119. Performances of Recessed Gate of Recessed Gate AlGaN/GaN MOSFET Using Mg Ion Implantation
Jun Hyeok Heo, Sang Ho Lee, Jin Park, Geon Uk Kim, Ga Eon Kang, So Ra Jeon, Young Jun Yoon and In Man Kang
제30회 한국반도체학술대회 (February, 2023)
118. Analysis for the Electrical Characteristic of Recessed-Gate AlGaN/GaN MOSFET with Stepped Gate Oxide
Ga Eon Kang, Sang Ho Lee, Jin Park, Geon Uk Kim, Jun Hyeok Heo, So Ra Jeon, and In Man Kang
제30회 한국반도체학술대회 (February, 2023)
117. The Influence of Single-Event-Effects on Complementary FET based Logic Inverter and Its Electrical Characteristic
Jin Park, Sang Ho Lee, Geon Uk Kim, Ga Eon Kang, Jun Hyeok Heo, So Ra Jeon and In Man Kang
제30회 한국반도체학술대회 (February, 2023)
116. Analysis of Heavy Ion Induced Single-Event-Transients in Capacitorless DRAM Based on a Polycrystalline Silicon Transistor
Sang Ho Lee, Jin Park, Geon Uk Kim, Ga Eon Kang, Jun Hyeok Heo, So Ra Jeon, and In Man Kang
제30회 한국반도체학술대회 (February, 2023)
115. Analysis of Capacitorless DRAM Based on Polycrystalline Silicon Nanotube Structure Depending on the Number of Grain Boundary
Jin Park, Sang Ho Lee, Ga Eon Kang, Jun Hyeok Heo, So Ra Jeon, and In Man Kang
ICEIC 2023 : International Conference on Electronics, Information, and Communication (February, 2023)
114. A Capacitorless DRAM Based on Bulk FinFET for the Immune of Work-Function Variation Effect
Sang Ho Lee, Jin Park, So Ra Min, Geon Uk Kim, Ga Eon Kang, Jun Hyeok Heo, Young Jun Yoon, Jae Hwa Seo, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee and In Man Kang
International Conference on Solid State Devices and Materials (September, 2022)
113. Analysis of Multi-Fin-type Vertical GaN Power Transistors Based on Bulk GaN Substrates
Jun Hyeok Heo , Sang Ho Lee, Jin Park, So Ra Min, Geon Uk Kim, Ga Eon Kang, Jaewon Jang, JinHyuk Bae, Sin-Hyung Lee, and In Man Kang
AWAD (July, 2022)
112. Electrical Performance depending on the Grain Boundary-Location in the Multi-Nanosheet Tunneling Field-Effect Transistor based on Poly-Si
Ga Eon Kang, Sang Ho Lee, Jin Park, So Ra Min, Geon Uk Kim, Jun Hyeok Heo, Jaewon Jang, JinHyuk Bae, Sin-Hyung Lee, and In Man Kan
AWAD (July, 2022)
111. Design of Capacitorless DRAM-based on Storage Layer Separated Using Separation Oxide and Polycrystalline Silicon
Geon Uk Kim, Young Jun Yoon, Jae Hwa Seo, Min Su Cho, Sang Ho Lee, Jin Park, Hee Dae An, So Ra Min, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee, and In Man Kang
제29회 한국반도체학술대회 (January, 2022)
110. Effect of Work Function Variation of Transfer Characteristics and Memory Performances in Gate-All-Around JLFET
Sang Ho Lee, Young Jun Yoon, Jae Hwa Seo, Min Su Cho, Jin Park, Hee Dae An, So Ra Min, Geon Uk Kim, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee and In Man Kang
AWAD (August, 2021)
109.Design and Analysis of DC/DC Boost Converter Using Vertical GaN Power Device based on GaN-on-Sapphire epitaxial
Min Su Cho, Young Jun Yoon, Jae Hwa Seo, Sang Ho Lee, Jin Park, Hee Dae An, So Ra Min, Geon Uk Kim, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee and In Man Kang
AWAD (August, 2021)
108. Electrical Performance of Vertical GaN-based Trench MOSFETs with Cylindrical and Hexagonal Structure
Geon Uk Kim, Young Jun Yoon, Jae Hwa Seo, Min Su Cho, Sang Ho Lee, Jin Park, Hee Dae An, So Ra Min, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee and In Man Kang
AWAD (August, 2021)
107. Analysis of Recessed-gate GaN MIS-HEMTs using Dual Dielectrics with Si3N4 and TiO2
Yun Hwan Kim, Min Su Cho, Sang Ho Lee, Jin Park, Hee Dae An, So Ra Min, Young Jun Yoon, Jae Hwa Seo, Jaewon Jang, Jin Hyuk Bae, and In Man Kang
제28회 한국반도체학술대회 (February, 2021)
106. Analysis of RF Performances in Recessed-Gate Based GaN MIS-HEMTs Using a Dual Gate-Insulator
So Ra Min, Min Su Cho, Sang Ho Lee, Jin Park, Hee Dae An, So Ra Min, Young Jun Yoon, Jae Hwa Seo, Jaewon Jang, Jin Hyuk Bae, and In Man Kang
제28회 한국반도체학술대회 (February, 2021)
105. Design and Analysis of DC/DC Boost Converter Using Vertical GaN Power Device
Min Su Cho, Hye Jin Mun, Sang Ho Lee, Jin Park, Hee Dae An, Jaewon Jang, Jin-Hyuk Bae and In Man Kang
The 18th International Nanotech Symposium & Nano-Convergence Expo (July, 2020)
104. Design of Capacitorless DRAM based on Silicon Nanotube Structure with Junctionless Dual-Gate Field-Effect Transistor
Sang Ho Lee, Min Su Cho, Hye Jin Mun, Jin Park, Hee Dae An, Jaewon Jang, Jin-Hyuk Bae and In Man Kang
The 18th International Nanotech Symposium & Nano-Convergence Expo (July, 2020)
103. Design of capacitorless DRAM based on multi-nanowire channels for improvement of memory performances
Jin Park, Min Su Cho, Hye Jin Mun, Sang Ho Lee, Hee Dae An, Jaewon Jang, Jin-Hyuk Bae and In Man Kang
The 18th International Nanotech Symposium & Nano-Convergence Expo (July, 2020)
102. Effect of the grain boundary in polycrystalline silicon-based source and drain regions in 1T-DRAM
Hee Dae An, Min Su Cho, Hye Jin Mun, Sang Ho Lee, Jin Park, Jaewon Jang, Jin-Hyuk Bae and In Man Kang
The 18th International Nanotech Symposium & Nano-Convergence Expo (July, 2020)
101. Analysis of CMOS Logic Inverter Based on Polycrystalline Silicon Layer in Gate-All-Around Junctionless Field-Effect-Transistor.
Hye Jin Mun, Min Su Cho, Won Douk Jang, Jun Hyeok Jang, Sang Ho Lee, Jaewon Jang, Jin-Hyuk Bae, and In Man Kang
제27회 한국반도체학술대회 (February, 2020)
100. Design of Capacitorless DRAM Based on Ultra-Thin Polycrystalline Silicon Junctionless Field-Effect Transistor with Dual Gate
Sang Ho Lee, Min Su Cho, Jun Hyeok Jung, Won Douk Jang, Hye Jin Mun , Jae Won Jang , Jin Hyeok Bae and In Man Kang
제27회 한국반도체학술대회 (February, 2020)
99. Simulation of the Capacitorless Dynamic Random Access Memory based on Junctionless FinFETs using Grain Boundary of Polycrystalline Silicon
Min Su Cho,Jun Hyeok Jung, Won Duck Jang, Hye Jin Mun, Sang Ho Lee and In Man Kang
The 17th International Nanotech Symposium & Nano-Convergence Expo (July, 2019)
98. MOSFET-based Capacitorless 1T-DRAM with Double- Polysilicon Layer using Grain Boundary for Hole Storage and Its Analysis
Won Duck Jang, Min Su Cho, Jun Hyeok Jung and In Man Kang
The 17th International Nanotech Symposium & Nano-Convergence Expo (July, 2019)
97. Analysis of CMOS login inverter based on polycrystalline silicon with a single grain boundary
Hye Jin Mun, Min Su Cho,Jun Hyeok Jung, Won Duck Jang, Sang Ho Lee and In Man Kang
The 17th International Nanotech Symposium & Nano-Convergence Expo (July, 2019)
96. Analysis of CMOS inverter based on gate-all-around transistors with strained-silicon layer for improving the switching performances
Sang Ho Lee, Min Su Cho,Jun Hyeok Jung, Won Duck Jang, Hye Jin Mun and In Man Kang
The 17th International Nanotech Symposium & Nano-Convergence Expo (July, 2019)
95. Analysis of RF Performance of AlGaN/GaN Based Fin-type HEMT with T-gate Depending on Gate Resistance
Won Douk Jang, Young Jun Yoon, Min Su Cho, Jun Hyeok Jung, and In Man Kang
Photonics & Electromagnetics Research Symposium (June, 2019)
94. Gate Recessed Normally-off AlGaN/GaN MIS-HEMTs with TiO2/Al2O3 Gate Dielectric Stack
Jun Hyeok Jung, Young Jun Yoon, Min Su Cho, Won Douk Jang, and In Man Kang
Photonics & Electromagnetics Research Symposium (June, 2019)
93. Design and Analysis of DC/DC Boost Converter Using InAlGaN/GaN-based High Electron Mobility Transistors
Min Su Cho, Young Jun Yoon, Jun Hyeok Jung, Won Douk Jang, and In Man Kang
Photonics & Electromagnetics Research Symposium (June, 2019)
92. Design of capacitorless DRAM based on strained Si-SiGe core-shell junctionless field-effect transistor for improvement of memory performances
Sang Ho Lee, Young Jun Yoon, Min Su Cho, Jun Hyeok Jung, Won Douk Jang, Hye Jin Mun and In Man Kang
제26회 한국반도체학술대회 (February, 2019)
91. Recessed-Gate GaN MIS-HEMTs Using the Dual Gate Insulator Employing TiO2/SiN
Jun Hyeok Jung, Young Jun Yoon, Min Su Cho, Won Douk Jang, Hye Jin Mun, Sang Ho Lee and In Man Kang
제26회 한국반도체학술대회 (February, 2019)
90. Effect of Grain Boundary on Capacitorless One-Transistor Dynamic Random-Access Memory based on Polysilicon Metal-Oxide-Semiconductor Field-Effect Transistor with Asymmetric Double-gate Structure
Won Douk Jang, Young Jun Yoon, Min Su Cho, Jun Hyeok Jung, Hye Jin Mun, and In Man Kang
Asian Conference on Engineering and Natural Sciences (ACENS) (Jan, 2019)
89. Normally-Off AlGaN/GaN MIS-HEMTs with Dual Gate Insulator Employing TiO2/SiN
Jun Hyeok Jung, Young Jun Yoon, Min Su Cho, Won Douk Jang, Hye Jin Mun, and In Man Kang
Asian Conference on Engineering and Natural Sciences (ACENS) (Jan, 2019)
88. Design and Analysis of the Capacitorless Dynamic Random Access Memory based on Junctionless FinFETs with surrounding storage layer
Min Su Cho, Young Jun Yoon, Jun Hyeok Jung, Won Douk Jang, and In Man Kang
Asian Conference on Engineering and Natural Sciences (ACENS) (Jan, 2019)
87. AlGaN/GaN Heterojunction-based MIS-HEMTs with Effective SiN Passivation Layer for Improving Device Reliability
Young Jun Yoon, Min Su Cho, Jun Hyeok Jung, Won Douk Jang, Hye Jin Mun, and In Man Kang
International Conference on Electronics, Information, and Communication (ICEIC) (Jan, 2019)
86. Effect of Interface Traps on the Device Performances of InGaAs-Based Gate-All-Around Tunneling Field-Effect Transistors
Won Douk Jang, Bo Gyeong Kim, Young Jun Yoon, Min Su Cho, and In Man Kang
The 16th International Nanotech Symposium & Nano-Convergence Expo (July, 2018)
85. Analysis of Electrical Characteristics for InAlGaN/GaN High Electron Mobility Transistors with Various Back Barriers
Jun Hyeok Jung, Young Jun Yoon, Min Su Cho, Bo Gyeong Kim, Won Douk Jang, Jin Sub Kim, and In Man Kang
The 16th International Nanotech Symposium & Nano-Convergence Expo (July, 2018)
84. Simulation for Electrical Performances of the Capacitorless Dynamic Random Access Memory based on Junctionless FinFET
Min Su Cho, Young Jun Yoon, Bo Gyeong Kim, Jun Hyeok Jung, Won Douk Jang, Jin Sub Kim, and In Man Kang
The 16th International Nanotech Symposium & Nano-Convergence Expo (July, 2018)
83. Capacitorless 1T-DRAM based on double-gate MOSFET with Si/SiGe heterojunction and underlap structure for improvement of sensing margin and retention time
Young Jun Yoon, Min Su Cho, Bo Gyeong Kim, Jae Hwa Seo, and In Man Kang
The 16th International Nanotech Symposium & Nano-Convergence Expo (July, 2018)
82. Polycrystalline Silicon MOSFET-based capacitorless one-transistor dynamic random-access memory with asymmetric double-gate structure
Young Jun Yoon, Bo Gyeong Kim, Min Su Cho, Jae Hwa Seo, Seongjae Cho ,and In Man Kang
2018 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (July, 2018)
81. Design Optimization of InGaAs/GaAsSb-based P-type Gate-All-Around Arch-shaped Tunneling Field-Effect Transisistor
Bo Gyeong Kim, Jae Hwa Seo, Young Jun Yoon, Min Su Cho, and In Man Kang
제25회 한국반도체학술대회 (February, 2018)
80. AlGaN/GaN Fin-HEMT with sub-100 nm T-gate: Optimization and modeling in RF regime
Jae Hwa Seo, Young Jun Yoon, Min Su Cho, and In Man Kang
제25회 한국반도체학술대회 (February, 2018)
79. Design Optimization of InGaAs/GaAsSb-based Heterojunction Gate-All-Around (GAA) Arch-Shaped Tunneling Field-Effect Transistor (A-TFET)
Jae Hwa Seo, Young Jun Yoon, Hwan Gi Lee, and In Man Kang
International Conference on Electronics, Information and Communication (January, 2018)
78. DC and RF performance comparison of p-i-n TFET and p-n TFET
Young Jun Yoon, Jae Hwa Seo, Jung-Hee Lee, and In Man Kang
International Microprocesses and Nanotechnology Conference (November, 2017)
77. Analysis of Ge/GaAs heterojunction-based PN junction tunneling field-effect transistor with dual-metal-gate structure for high-performance and low-power applications
Jae Hwa Seo, Young Jun Yoon, Min Su cho, and In Man Kang
Applied Nanotechnology and Nanoscience International Conference (October, 2017)
76. Electrical Performances of 1T-DRAM based on PNPN Tunneling FET with asymmetric Double-Gate Structure
Young Jun Yoon, Jae Hwa Seo, Min Su Cho, Bo Gyeong Kim, and In Man Kang
International Conference on Solid State Devices and Materials (September, 2017)
75. Simulation of Electrical Characteristics for GaSb Junctionless Transistor
Min Su Cho, Jae Hwa Seo, Young Jun Yoon, Bo Gyeong Kim and In Man Kang
International Symposium on Engineering and Applied Science (August, 2017)
74. Simulation of 1T-DRAM based on Symmetric Double-Gate Si Junctionless Transistor
Bo Gyeong Kim, Jae Hwa Seo, Young Jun Yoon, Min Su Cho, Sang Hyuk Lee, Jung-Hee Lee and In Man Kang
The 15th International Nanotech Symposium & Nano-Convergence Expo (July, 2017)
73. Design and Analysis of Capacitorless 1T-DRAM based on Double-gate Tunneling Field Effect Transistor
Min Su Cho, Jae Hwa Seo, Young Jun Yoon, Bo Gyeong Kim, Sang Hyuk Lee, Jung Hee Lee and In Man Kang
The 15th International Nanotech Symposium & Nano-Convergence Expo (July, 2017)
72. Design Optimization and Analysis of Ge/GaAs-based Gate-All-Around (GAA) Arch-shaped Tunneling Field-Effect Transistor (TFET)
Jae Hwa Seo, Young Jun Yoon, Jung-Hee Lee and In Man Kang
The 15th International Nanotech Symposium & Nano-Convergence Expo (July, 2017)
71. Fabrication of GaN-based Fin-type HEMT and Its Electrical Performances which Applicable for Green-energy Automobile Power Applications
Jae Hwa Seo, Young Jun Yoon, Hwan Gi Lee and In Man Kang
The 6th International Conference on Power and Energy Systems (November, 2016)
70. Impact of Source-connected Field-plate Structure on Switching performance of GaN-based Recessed-gate MOSFETs for High-voltage and High-switching System
Young Jun Yoon, Jae Hwa Seo, Hwan Gi Lee and In Man Kang
The 6th International Conference on Power and Energy Systems (November, 2016)
69. Capacitorless 1T-DRAM Based on Double-Gate GaAs Junctionless Transistor
Young Jun Yoon, Jae Hwa Seo, Young In Jang, Min Su Cho, Jung-Hee Lee and In Man Kang
The 29th International Microprocesses and Nanotechnology Conference (November, 2016)
68. Effect of Interface Traps on the Device Performances of the Tunneling Field-Effect Transistors Based on InGaAs
Ra Hee Kwon, Young Jun Yoon, Jae Hwa Seo, Young In Jang, Min Su Cho, Jung-Hee Lee, and In Man Kang
The 2016 International Conference on Solid State Devices and Materials (September, 2016)
67. Desing and Analysis of Logic Inverter Using Antimony-based Compound Semiconductor Junctionless Transistor
Min Su Cho, Jae Hwa Seo, Young Jun Yoon, Ra Hee Kwon, Young In Jang, Chul-Ho Won, Jeong-Gil Kim, Jung-Hee Lee, Seongjae Cho, and In Man Kang
The 14th International Nanotech Symposium & Nano-Convergence Expo (July, 2016)
66. Electrical Performance of InN/GaN-based Tunneling Field-effect Transistor with Subthrethold Swing below 60 mV/decade
Ra Hee Kwon, Jae Hwa Seo, Young Jun Yoon, Young In Jang, Min Su Cho, Seongjae Cho, Jung-Hee Lee, and In Man Kang
The 14th International Nanotech Symposium & Nano-Convergence Expo (July, 2016)
65. Design Optimization and Analysis of InGaAs-based Gate-All-Around (GAA) Junctionless Field-Effect Transistor
Jae Hwa Seo, Young Jun Yoon, Jung-Hee Lee, Hyuck-In Kwon, and In Man Kang
The 14th International Nanotech Symposium & Nano-Convergence Expo (July, 2016)
64. Effect of electric fringe-field on low-power and radio-frequency performance of sub-10 nm junctionless transistors with hetero-dieletric spacer structure
Young Jun Yoon, Jae Hwa Seo, Min Su Cho, Seongjae Cho, and In Man Kang
The 14th International Nanotech Symposium & Nano-Convergence Expo (July, 2016)
63. InGaAs-based Tunneling Field-Effect Transistor with Stacked Dual-Metal-Gate with PNPN Structure for High Performance
Ra Hee Kwon , Young Jun Yoon, Jae Hwa Seo, Young In Jang, Min Su Jo, and In Man Kang
2016 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (July, 2016)
62. Design and Analysis of Fin-type AlGaN/GaN MIS-HEMTs using Dual-Metal-Gate (DMG) structure
Young In Jang , Young Jun Yoon, Jae Hwa Seo, Ra Hee Kwon, Min Su Jo, and In Man Kang
2016 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (July, 2016)
61. InGaAs-based Junctionless Transistor with Dualspacer Dielectric for Low Power Loss and High Frequency Mobile Network System
Young Jun Yoon, Jae Hwa Seo, Ra Hee Kwon, Young In Jang, and In Man Kang
The 30th International Conference on Information Networking (January, 2016)
60. Design Optimization of Si/Ge-based Heterojunction Arch-shaped Gate-All-Around (GAA) Tunneling Field-Effect Transistor (TFET) which Applicable for future Mobile Communication Systems
Jae Hwa Seo, Young Jun Yoon, Ra Hee Kwon, Young In Jang, and In Man Kang
The 30th International Conference on Information Networking (January, 2016)
59. Design and Analysis of Ge/GaAs-based Heterojunctino Gate-All-Around (GAA) Arch-Shaped Tunneling Field-Effect Transistor (TFET)
Jae Hwa Seo, Young Jun Yoon, Jin Su Kim, Ra Hee Kwon, Young In Jang, Hye Rim Eun, Jung-Hee Lee, and In Man Kang
The 9th International Conference on Advanced Materials and Devices (December, 2015)
58. GaN-based junctionless transistor with hetero-gate dielectrics for enhancement of DC and RF performance
Young Jun Yoon, Ra Hee Kwon, Jae Hwa Seo, Jung-Hee Lee, and In Man Kang
The 9th International Conference on Advanced Materials and Devices (December, 2015)
57. The Effect of Dual-Spacer Dielectrics on Low-Power Performance of Sub-10 nm Tunneling Field-Effect Transistor
Young Jun Yoon, Jae Hwa Seo, Seongjae Cho, Hyuck-In Kwon, Jung-Hee Lee, and In Man Kang
The 28th International Microprocesses and Nanotechnology Conference (November, 2015)
56. GaN-based junctionless vertical nanowire transistor using dual-material gate structure for high-power and high-frequency applications
Young Jun Yoon, Jae Hwa Seo, Hee-Sung Kang, Seongjae Cho, Jung-Hee Lee, and In Man Kang
The 13th International Nanotech Symposium & Nano-Convergence Expo (July, 2015)
55. Design Optimization of InAs-Based Gate-All-Aroud (GAA) Arch-shaped Tunneling Field-Effect Transistor (TFET)
Jae Hwa Seo, Young Jun Yoon, Young-Woo Jo, Dong-Hyeok Son, Jin Su Kim, Seongjae Cho, Hyuck-In Kwon, Jung-Hee Lee, and In Man Kang
The 13th International Nanotech Symposium & Nano-Convergence Expo (July, 2015)
54. The study of AlGaN/GaN-based double-heterojunction FinFET for improvement of device performance
Hye Rim Eun, Jae Hwa Seo, Young Jun Yoon, Young In Jang, Jin Su Kim, Hyuck-In Kwon, Seongjae Cho, Jung-Hee Lee and In Man Kang
The 13th International Nanotech Symposium & Nano-Convergence Expo (July, 2015)
53. Design Optimization and Analysis of InGaAs-based Junctionless Fin-Type Field-Effect Transistor with 10 nm Gate Length
Jin Su Kim, Jae Hwa Seo, Young Jun Yoon, Young-Woo Jo, Dong-Hyeok Son, Seongjae Cho, Hyuck-In Kwan, Jung-Hee Lee, and In Man Kang
The 13th International Nanotech Symposium & Nano-Convergence Expo (July, 2015)
52. Sub-10 nm Ge/GaAs Heterojunction-based Tunneling Field-Effect Transistor with Vertical Tunneling Operation
Young Jun Yoon, Jae Hwa Seo, Jin Su Kim, Young Jae Kim, Sung Yoon Kim, Hye Rim Eun, Hye Su Kang, Young In Jang, Ra Hee Kwon, Seongjae Cho,
Hyuck-In Kwo, Jung-Hee Lee, and In Man Kang
2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (June, 2015)
51. Simulation of InN/GaN-based Double-Gate Tunneling Field-Effect Transistor
Jae Hwa Seo, Ra Hee Kwon, Young Jun Yoon, Young-Woo Jo, Ryun-Hwi Kim, Dong-Hyeok Son, Jung-Hee Lee, and In Man Kang
The 7th Asia-Pacific Workshop on Widegap Semiconductors (May 2015)
50. Design and Analysis of Gate recessed AlGaN/GaN Fin-type Field-Effect Transistor
Young In Jang, Jae Hwa Seo, Young Jun Yoon, Hye Rim Eun, Ra Hee Kwon, Jin Su Kim, Jung-Hee Lee, and In Man Kang
The 22th Korean Conference on Semiconductors (February 2015)
49. Device design of P-N Tunneling Field-Effect Transistor based on AlGaSb/InGaAs Heterojunction
Hye Rim Eun, Young Jun Yoon, Jae Hwa Seo, Young In Jang, Jin Su Kim, Jung-Hee Lee, and In Man Kang
The 22th Korean Conference on Semiconductors (February 2015)
48. RF Performance of InGaAs-Based T-gate Junctionless Field-Effect Transistors which Applicable for High Frequency Network Systems
Jae Hwa Seo, Young Jun Yoon, Sung Yoon Kim, Young Jae Kim, and In Man Kang
The 29th International Conference on Information Networking (January 2015)
47. U 채널 실리콘 나노와이어 터널링 전계 효과 트랜지스터의 설계 및 최적화
서재화, 윤영준, 김성윤, 강인만
한국광전자학회 제4회 정기학술대회 (November 2014)
46. 적층 구조를 활용한 전자-정공 이중층 터널링 전계효과 트랜지스터의 설계 및 분석
김성윤, 서재화, 윤영준, 강인만
한국광전자학회 제4회 정기학술대회 (November 2014)
45. Analysis of DC and RF performances on Current Aperture Vertical Electron Transistor (CAVET) With Multi-Apertures Structure
Hye Su Kang, Young Jae Kim, Sung Yoon Kim, Jae Hwa Seo, Young Jun Yoon, Jung-Hee Lee, Seongjae Cho, and In Man Kang
International Microprocesses and Nanotechnology Conference (November 2014)
44. A Study on Drain-Induced Barrier Thinning of Short Channel Tunneling Field-Effect Transistor using Drain-overlap Structure
Young Jun Yoon, Hye Rim Eun, Jae Hwa Seo, Hee-Sung Kang, Young-Jo Kim, Seongjae Cho, Eou-Sik Cho, Muhan Choi, Heung-Sik Tae, Jung-Hee Lee, and In Man Kang
The 12th International Nanotech Symposium & Nano-Convergence Expo (July 2014)
43. The Design and Analysis of CMOS-compatible III-V compound Electron-Hole Bilayer Tunneling Field-Effect Transistors for Ultra-low Standby Power Applications
Sung Yoon Kim, Jae Hwa Seo, Young Jun Yoon, Seongjae Cho, Jonghoo Park, Heung-Sik Tae and In Man Kang
The 12th International Nanotech Symposium & Nano-Convergence Expo (July 2014)
42. Analysis on RF Performances of Silicon-Compatible InGaAs-Based Junctionless Field-Effect Transistor
Jae Hwa Seo, Young Jun Yoon, Jin-Hyuk Bae, Seongjae Cho, Heung-Sik Tae, Jung-Hee Lee, and In Man Kang
The 12th International Nanotech Symposium & Nano-Convergence Expo (July 2014)
41. Short Channel Tunneling Field Effect Transistor Based On Ge/GaAs Heterojunction Using Vertical Tunnenling Operation
Young Jae Kim, Young Jun Yoon, Gwan Min Yoo, Jae Hwa Seo, Sung Yoon Kim, Hye Soo Kang, Hye Rim Eun, J. Kim, Jin-Hyuk Bae, Eou-Sik Cho, Jung-Hee Lee, Seongjae Cho, M. Choi, and Im Man Kang
The 7th Asia-Pacific Conference on Transducers and Micro/Nano Technologies (July 2014)
40. Analysis of Switching Performances On Large-Size Recessed-Gate AlGaN/GaN Heterojunction-Based MOSFET Using Gate Field-Plate Structure For High Power Switching Application
Young Jun Yoon, Young Jae Kim, Jae Hwa Seo, Hye Soo Kang, Young-Jo Kim, Jung-Hee Lee, and In Man Kang
The 7th Asia-Pacific Conference on Transducers and Micro/Nano Technologies (July 2014)
39. AlGaN/GaN Heterojunction-based MOSFET using Step-recessed Gate Structure for High Voltage Operation
Young Jun Yoon, Young Jae Kim, Jae Hwa Seo, and In Man Kang
The 29th International Technical Conference on Circuits/Systems, computers and Communications (July 2014)
38. The RF Characteristic Analysis of Short-Channel Recessed-Gate AlGaN/GaN MOSFET
Jae Hwa Seo, Young Jun Yoon, Sung Yoon Kim, and In Man Kang
The 29th International Technical Conference on Circuits/Systems, computers and Communications (July 2014)
37. Dependence of Device Performances on Fin Dimensions in AlGaN/GaN Recessed-Gate Nanoscale FinFET
Gwan Min Yoo, Jae Hwa Seo, Young Jun Yoon, Young Jae Kim, Sung Yoon Kim, Hye Su Kang, Hye Rim Eun, Ra Hee Kwon, Young In Jang, and In Man Kang
2014 International Conference on Electronics, Information and Communication (June 2014)
36. Design and Analysis of Sub-10nm Junctionless Fin-Type Field-Effect Transistors
Sung Yoon Kim, Jae Hwa Seo, Gwan Min yoo, Young Jae Kim, Hye Rim Eun, Hye Su Kang, Young-Woo Jo, Seongjae Cho, Jung-Hee Lee, and In Man Kang
The 21th Korean Conference on Semiconductors (February 2014)
35. Design and Analysis of Gate-recessed Double Heterojunction AlGaN/GaN Field-Effect Transistor
Hye Su Kang, Jae Hwa Seo, Young Jun Yoon, Hwan Gi Lee, Gwan Min Yoo, Young Jae Kim, Sung Yoon Kim, Sung Yun Woo, Hee Bum Roh, Hye Rim Eun, Seongjae Cho, Jung-Hee Lee, and In Man Kang
The 21th Korean Conference on Semiconductors (February 2014)
34. Device Design of Short Channel Tunneling Field-Effect Transistor for Low Stanby Power Application
Hye Rim Eun, Young Jun Yoon, Jae Hwa Seo, Hee-Sung Kang, Eou-Sik Cho, Seongjae Cho, Jung-Hee Lee, and In Man Kang
The 21th Korean Conference on Semiconductors (February 2014)
33. Simulation of InGaAs/Si-based Heterojunction Tunneling Field-Effect Transistors
Jae Hwa Seo, Yeon-joo Lee, Seongjae Cho, Young Jun Yoon, Hwan Gi Lee, Gwan Min Yoo, Young Jae Kim, Sung Yoon Kim, Sung Yun Woo, Hee Bum Roh, Hye Rim Eun, Hye Su Kang, Jung-Hee Lee, and In Man Kang
International Conference on Electronics, Information and Communication (January 2014)
32. Analysis of Radio Frequency Performance on GaAs/InGaAs Heterojunction Tunneling Field-Effect Transistor which Applicable for Green Energy System Applications
Young Jun Yoon, Jae Hwa Seo, Hwan Gi Lee, Gwan Min Yoo, Young Jae Kim Sung Yoon Kim, Sung Yun Woo, Hee Bum Roh, Hye Rim Eun, Hye Su Kang, Seongjae Cho, Eou-Sik Cho, Jin-Hyuk Bae, Jung-Hee Lee, and In Man Kang
International Conference on Wisdom City and Advances in City Infrastructure Engineering (WC CIC) (January 2014)
31. The Simulation and Analysis of Recess-Gated GaN/AlGaN MOSFET RF Characteristics for Green-energy Automobile Applications
Jae Hwa Seo, Young Jun Yoon, Hwan Gi Lee, Gwan Min Yoo, Young Jae Kim, Sung Yoon Kim, Sung Yun Woo, Hee Bum Roh, Hye Rim Eun, Hye Su Kang, Seongjae Cho, Jung-Hee Lee, and In Man Kang
International Conference on Wisdom City and Advances in City Infrastructure Engineering (WC CIC) (January 2014)
30. Recessed-gate GaN-based MOSFET having dual dielectric for high power electronics application
Young Jun Yoon, Hee-Sung Kang, Jae Hwa Seo, Young Jae Kim, Eou-Sik Cho, Seongjae cho, Jung-Hee Lee, and In Man Kang
International Conference on Advanced Materials and Devices (December 2013)
29. The Effect of Spacer Dielectrics on Performance of Ge-Based Tunneling FETs
Young Jun Yoon, Gwan Min Yoo, Seongjae Cho, and In Man Kang
International Microprocesses and Nanotechnology Conference (November 2013)
28. Novel Tri-State Latch Using Single-Peak Negative Differential Resistance (NDR)
Sunhae Shin, In Man Kang, and Kyung Rok Kim
The 2013 International Conference on Solid State Devices and Materials (September 2013)
27. Design of AlGaAs/InGaAs Heterojunction Tunneling Field-Effect Transistor for Low-Standby-Power and High-Performance Application
Young Jun Yoon, Seongjae ho, Jae Hwa Seo, Eou-Sik Cho, Shin-Won Kang, Jin-Hyuk Bae, Byung-Gook Park, James S. Harris Jr., and In Man Kang
The 2013 International Conference on Solid State Devices and Materials (September 2013)
26. Fabrication of Triangle-type Light-Emitting Diodes(T-LED) for Current Spreading
Hwan Gi Lee, Jae Hwa Seo, Young Jun Yon, Eou-Sik Cho, Jin-Hyuk Bae, and In Man Kang
KJF International Conference on Organic Materials for Electronics and Photonics 2013 (August 2013)
25. Regirous Design of Junctionless Nanowire Transistors (JNT) based on Gallium Nitride Channel Material
Jae Hwa Seo, Jung-Hee Lee, and In Man Kang
NANO KOREA, The 11th International Nanotech Symposium & Nano-Convergence Expo (July 2013)
24. Novel Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect-Transistors Based on Radio-Frequency Analysis
Jae Hwa Seo, Gwan Min Yoo, Seongjae Cho, Young Woo Jo, Shin-Won Kang, Jung-Hee Lee, Jin-Hyuk Bae, Kyung Rok Kim, and In Man Kang
NANO KOREA, The 11th International Nanotech Symposium & Nano-Convergence Expo (July 2013)
23. Heteromaterial gate tunneling field-effect transistors for radio frequency and high-speed application
Young Jun Yoon, Seongjae Cho, and In Man Kang
NANO KOREA, The 11th International Nanotech Symposium & Nano-Convergence Expo (July 2013)
22. Tunneling Field Effect Transistor Based on Ge/SiGe/Silicon Multiple-Heterojunction for Low Standby Power and High-Speed Operation
The 28th International Technical Conference on Circuits/Systems, Computers and Communications,(July 2013)
21. Fabrication and Characterization of GaN Light-Emitting Diodes (LEDs) with Novel Structures for Improved Electrical and Optical Performances
Hwan Gi Lee, Jae Hwa Seo, and In Man Kang
The 28th International Technical Conference on Circuits/Systems, Computers and Communications (July 2013)
20. 삼각형 구조의 발광 다이오드 제작과 특성
이환기, 서재화, 윤영준, 강인만
LED.반도체조명학회 학술대회, LED.반도체조명학회 (February 2013)
19. InGaAs-Based Junctionless Field-Effect Transistor Using InP Buffer Layer on Silicon Substrate
Jae Hwa Seo, Hwan Gi Lee, Sung Yun Woo, Seongjae Cho, and In Man Kang
International Conference on Electronics, Information and Communication (February 2013)
18. Germanium Waveguide for On-Chip Optical Interconnect
Seongjae Cho, Hyungjin Kim, SeongHyun Paik, In Mak Kang, Jung-Hee Lee, Byung-Gook Park, and James S. Harris Jr.
International Conference on Electronics, Information and Communication (February 2013)
17. Low-Standby Power and High-Performance InAs/InGaAs/InP Heterojunction Tunneling Field-Effect Transistor
Seongjae Cho, Sung Yun Woo, Hyungjin Kim, Jae Hwa Seo, Hwan Gi Lee, In Man Kang, Byung-Gook Park, and James S. Harris Jr.
International Conference on Electronics, Information and Communication (February 2013)
16. InAs/InGaAs/InP heterojunction tunneling field-effect transistors based on compound semiconductors for integrated sensor systems
Sung Yun Woo, Hwan Gi Lee, Hee Bum Rho, Gwan Min Yoo, Yun Soo Park, and In Man Kang
The Korean Sensors Society (November 2012)
15. Tunneling field-effect transistors based on SiGe/si heterostructure for integrated sensor systems in silicon substrate
Young Jun Yoo, Jae Hwa Seo, Sung Yoon Woo, Hwan Gi Lee, In Man Kang
The Korean Sensors Society (November 2012)
14. Design optimization of junctionless fin-type field-effect transistors for integrated sensor applications on silicon based systems
Jae Hwa Seo, Hwan Gi Lee, Jae Sung Lee, and In Man Kang
The Korean Sensors Society (November 2012)
13. Uniform current spreading simulation of circle-type light-emitting diodes(C-LED) for photonic sensor applications
Hwan Gi Lee, Jae Hwa Seo, and In Man Kang
The Korean Sensors Society (November 2012)
12. InGaAs-Si Heterojunction Tunneling Field-Effect Transistor Based on Silicon Substrate
Sung Yun Woo, Young Jun Yoon, Jin-Hyuk Bae, Seongjae Cho, Jung-Hee Lee, and In Man Kang
International Microprocesses and Nanotechnology Conference (October 2012)
11. Effect of Organic Semiconductor Film Formation on the Magnitude of the Interfacial Trap Density in a Low - Voltage Operated Thin-Film Transistor
Jin-Hyuk Bae, Hwan Gi Lee, and In Man Kang
International Microprocesses and Nanotechnology Conference (October 2012)
10. Compound Semiconductor Tunneling Field-Effect Transistor Based on Ge/GaAs Heterojunction with Tunneling-Boost Layer for High-Performance Operation
Young Jun Yoon, Seongjae Cho, Jae Hwa Seo, In Man Kang, Byung-Gook Park, and Jung-Hee Lee
Solid State Devices and Materials (September 2012)
9. Novel Extraction Method for Source and Drain Series Resistances in Silicon Nanowire MOSFETs Based on Radio-Frequency Analysis
Kyung Rok Kim, Sunhae Shin, Seongjae Cho, Jung-Hee Lee, and In Man Kang
Solid State Devices and Materials (September 2012)
8. Analysis for RF parameters of nano-scale tunneling field-effect transistor based on InAs/InGaAs/InP layer
Sung Yun Woo, Young Jun Yoon, Seongjae Cho, Jung-Hee Lee and In Man Kang
NANO KOREA (August 2012)
7. Rigorous Design for Gate-Dielectric and n-pocket Regin of tunneling field-effect Transistors and Its High Performances
Jae Hwa Seo, Jae Sung Lee, Yun Soo Park, Jung-Hee Lee, and In Man Kang
Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (June 2012)
6. Design Optimization of Vertical Double Gate SiGe/Si Heterostructure Tunneling Field-Effect Transistors
Young Jun Yoon, Jae Sung Lee, Yun Soo Park, Jae Hwa Seo, Sung Yoon Woo, and In Man Kang
Korean Conferece on Semiconductors (February 2012)
5. Design Optimization of Vertical Double Gate Tunneling Field-Effect Transistors
Young Jun Yoon, Jae Sung Lee, Sung Yun Woo, Yun Soo Park, Jae Hwa Seo, and In Man Kang
International Conference on Advanced Materials and Devices (December 2011)
4. Characteristics of Gate-All-Around Hetero-Gate-Dielectric Tunneling FETs
Jae Sung Lee, Woo Young Choi, and In Man Kang
International Microprocesses and Nanotechnology Conference (June 2011)
3. Performance of Gate-All-Around Tunneling FETs based on Strained Silicon Layer
Jae Sung Lee and In Man Kang
Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (June 2011)
2. Extraction Method of the Four-Terminal Series Resistances of Planar MOSFETs
Jae Sung Lee, In Man Kang, Hyungcheol Shin
Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (June 2011)
1. Small-Signal Modeling of Gate-All-Around Junctionless MOSFETs for Sub-millimeter Wave Applications
Seongjae Cho, Jae Sung Lee, In Man Kang, Byung-Gook Park, and James S. Harris
International Technical Conference on Circuits/Systems, Computers and Communications (June 2011)
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