journal2025

[2025]

218.  Design and analysis of 3D stacked nanosheet-based capacitorless DRAM with separated storage regions under process variations

     Soo Bean Song, Jin Park, Sang Ho Lee, Won Suk Koh, Gang San Yun, Kyeong Min Lim, Jaewon Jang, Jin‑Hyuk Bae, Young Jun Yoon,  In Man Kang

     Journal of Science: Advanced Materials and Devices (December,  2025)

217.  Investigating Quasi-Nonvolatile Memory Behavior in Junctionless Field-Effect Transistors with SOI-Like Structure

      Sang Ho Lee, Jin Park, Young Jun Yoon,  In Man Kang

      Silicon (November,  2025)

216.  Structural Optimization and Trap Effects on the Output  Performance of 4H-SiC Betavoltaic Cell

      Kyeong Min Kim, In Man Kang, Young Jun Yoon , Kibeom Kim,  Jae Hwa Seo

       Nanomaterials (October,  2025)

215. Impact of Grain Boundaries on Zero-Temperature Coefficient Characteristics in a 3D-Stacked Transistor

      Kyung Hee Kim , In Man Kang, Young Jun Yoon , Kibeom Kim

       Electronics (August,  2025)

214. Fabrication of AlGaN/GaN HEMT using TMAH pre-treatment and analysis of electrical characteristics by proton irradiation

       Jin Park, Sang Ho Lee, In Man Kang , and Young Jun Yoon

       Current Applied Physics  (July,  2025)

213. Optimization of One-transistor (1T) DRAM Using Device Parameters-dependent Zero-temperature Coefficient Point

      Kyung Hee Kim , Kyeong Min Kim, Yeong Hwan Kim, Jong Beom Im, Gyu Ho Choi, In Man Kang, Young Jun Yoon  

       Journal of Semiconductor Technology and Science (June,  2025)

212. Electrically and environmentally stable nitric acid-assisted SnO2 films for the active channel layer of thin-film transistors

       Yoonjin Cho, Sangwoo Lee, Seongwon Heo, Suhyeon Choi, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Won-Yong Lee, Jaewon Jang 

       Materials Today Advances  (June,  2025)

211. Design of a gate-all-around arch-shaped tunnel-field-effect-transistor-based capacitorless DRAM

       Seung Ji Bae, Sang Ho Lee, Jin Park, Min Seok Kim, Jeong Woo Hong, Won Suk Koh, Gang San Yun, Jaewon Jang, Jin‑Hyuk Bae, In Man Kang 

      Discover Nano  (April,  2025)

210. Enhancing the nonvolatile properties of sol-gel-processed Y2O3 RRAM devices by suppressing oxygen vacancy formation

       Sangwoo Lee, Yoonjin Cho, Seongwon Heo, Suhyeon Choi, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Won-Yong Lee, Jaewon Jang  

       Materials Science in Semiconductor Processing  (March,  2025)

209. Design and analysis of quasi-vertical multi-fin GaN power devices based on epitaxially grown GaN-on-sapphire

       Jeong Woo Hong, Sang Ho Lee, Jin Park, Min Seok Kim, Seung Ji Bae, Won Suk Koh, Gang San Yun, and In Man Kang

       Journal of Science: Advanced Materials and Devices (March,  2025)

208. Experimental and Simulation Study on the Electrical  Characteristics of Proton-irradiated AlGaN/GaN  HEMT

       So Ra Jeon , Sang Ho Lee, Jin Park, Min Seok Kim, Seung Ji Bae, Jeong Woo Hong, Won Suk Koh, Gang San Yun, In Man Kang, and Young Jun Yoon

       Journal of Semiconductor Technology and Science  (February,  2025)

207. Viable Approach of Tuning Oxide Semiconductor Thin Films in Solution-Processed Heterojunction Thin Films Transistors for Both Higher Performances and Stability

       Jun-Su Eun, Jinuk Lee, Jeong-Hyeon Na, Jun-Hyeong Park, Won Park, Junhao Feng, Kyung-Ho Seo, Jaewon Jang , In-Man Kang, Do-Kyung Kim and Jin-Hyuk Bae

       Advanced Electronic Materials (February,  2025)

206. Novel three-dimensional stacked capacitorless DRAM architecture using partially etched nanosheets for high-density memory applications

       Min Seok Kim, Sang Ho Lee, Jin Park, Seung Ji Bae, Jeong Woo Hong, Won Suk Koh, Gang San Yun, Jaewon Jang , Jin-Hyuk Bae, and In Man Kang

       Discover Nano (February,  2025)