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[2016]

85. DC and RF Analysis of Geometrical Parameter Changes in the Current Aperture Vertical Electron Transistor

Hye Su Kang, Jae Hwa Seo, Young Jun Yoon, Min Su Cho, and In Man Kang

Journal of Electrical Engineering & Technology (November, 2016)

84. Enhancement-Mode GaN-Based Junctionless Vertical Surrounding-Gate Transistor with Dual-Material Gate Structure for High-Frequency Applications

Young Jun Yoon, Jae Hwa Seo, Hyuck-In Kwon, Jung-Hee Lee, and In Man Kang

Journal of Nanoscience and Nanotechnology (October, 2016)

83. Design Optimization of InAs-Based Gate-All-Around (GAA) Arch-Shaped Tunneling Field-Effect Transistor (TFET)

Jae Hwa Seo, Young Jun Yoon, Young-Woo Jo, Dong-Hyeok son, Seongjae Cho, Hyuck-In Kwon, Jung-Hee Lee, and In Man Kang

Journal of Nanoscience and Nanotechnology (October, 2016)

82. Design Optimization of AlN/GaN-Based Double-Heterojunction Fin-Type High Electron Mobility Transistors for High On-State Current

Ra Hee Kwon, Hye Rim Eun, Jae Hwa Seo, Young Jun Yoon, Young In Jang Jung-Hee Lee, and In Man Kang

Journal of Nanoscience and Nanotechnology (October, 2016)

81. Design Optimization and Analysis of InGaAs-Based Junctionless Fin Type Field-Effect Transistors (FinFETs) with L_G = 10 nm

Min Su Cho, Jae Hwa Seo, Young Jun Yoon, Jung-Hee Lee, and In Man Kang

Journal of Nanoscience and Nanotechnology (October, 2016)

80. TMAH-based wet surface pre-treatment for reduction of leakage current in AlGaN/GaN MIS-HEMTs

Young Jun Yoon, Jae Hwa Seo, Min Su Cho, Hee-Sung Kang, Chul-Ho Won, In Man Kang, and Jung-Hee Lee

Solid-State Electronics (October, 2016)

79. Al(In)N/GaN Fin-Type HEMT With Very-Low Leakage Current and Enhanced I-V Characteristic for Switching Applications

Jae Hwa Seo, Young-Woo Jo, Young Jun Yoon, Dong-Hyeok Son, Chul-Ho Won, Hwan Soo Jang, In Man Kang, and Jung-Hee Lee

IEEE Electron Device Letters (July, 2016)

78. Effects of dual-spacer dielectrics on low-power and high-speed performances of sub-10 nm tunneilng-effect transistors

Young Jun Yoon, Jae Hwa Seo, Seongjae Cho, Hyuck-In Kwon, and In Man Kang

Japaneses Journal of Applied Physics (April, 2016)

77. Design Optimization of Vertical Nanowire Tunneling Field-Effect Transistor Based on AlGaSb/InGaAs heterojunction layer

Hye Rim Eun, Young Jun Yoon, Jae Hwa Seo, Min Su Cho, Jung-Hee Lee, Hyuck-In Kwon, and In Man Kang

Current Applied Physics (July, 2016)

76. Sub-10nm Ge/GaAs Heterojunction-Based Tunneling Field-Effect Transistor with Vetical Tunneling Operation for Ultra-Low-Power Applications

Young Jun Yoon, Jae Hwa Seo, Seongjae Cho, Hyuck-In Kwon, Jung-Hee Lee, and In Man Kang

Journal of Semiconductor and Science (Apirl, 2016)

75. Nonlinear Transport in Organic Thin Film Transistors with Soluble Small Molecule Semiconductor

Hyeok Kim, Dong-Seok Song, Hyuck-Jin Kwon, Ji-Hoon Kim, Do-Kyung Kim, SeongMin Kim, In Man Kang, Jonghoo Park, Heung-Sik Tae, Nicolas Battaglini, Philippe Lang, Gilles Horowitz, Jin-Hyuck Bae

Journal of Nanoscience and Nanotechnology (March, 2016)

74. Fully Coupled Finite Element Anlaysis for Surface Discharge on Solid Insulation in Dielectric Liquid with Experimental Validation

Ho-Young Lee, In Man Kang and Se-Hee Lee

IEEE Transaction on Magnetics (March, 2016)