[2019]
99. Simulation of the Capacitorless Dynamic Random Access Memory based on Junctionless FinFETs using Grain Boundary of Polycrystalline Silicon
Min Su Cho,Jun Hyeok Jung, Won Duck Jang, Hye Jin Mun, Sang Ho Lee and In Man Kang
The 17th International Nanotech Symposium & Nano-Convergence Expo (July, 2019)
98. MOSFET-based Capacitorless 1T-DRAM with Double- Polysilicon Layer using Grain Boundary for Hole Storage and Its Analysis
Won Duck Jang, Min Su Cho, Jun Hyeok Jung and In Man Kang
The 17th International Nanotech Symposium & Nano-Convergence Expo (July, 2019)
97. Analysis of CMOS login inverter based on polycrystalline silicon with a single grain boundary
Hye Jin Mun, Min Su Cho,Jun Hyeok Jung, Won Duck Jang, Sang Ho Lee and In Man Kang
The 17th International Nanotech Symposium & Nano-Convergence Expo (July, 2019)
96. Analysis of CMOS inverter based on gate-all-around transistors with strained-silicon layer for improving the switching performances
Sang Ho Lee, Min Su Cho,Jun Hyeok Jung, Won Duck Jang, Hye Jin Mun and In Man Kang
The 17th International Nanotech Symposium & Nano-Convergence Expo (July, 2019)
95. Analysis of RF Performance of AlGaN/GaN Based Fin-type HEMT with T-gate Depending on Gate Resistance
Won Douk Jang, Young Jun Yoon, Min Su Cho, Jun Hyeok Jung, and In Man Kang
Photonics & Electromagnetics Research Symposium (June, 2019)
94. Gate Recessed Normally-off AlGaN/GaN MIS-HEMTs with TiO2/Al2O3 Gate Dielectric Stack
Jun Hyeok Jung, Young Jun Yoon, Min Su Cho, Won Douk Jang, and In Man Kang
Photonics & Electromagnetics Research Symposium (June, 2019)
93. Design and Analysis of DC/DC Boost Converter Using InAlGaN/GaN-based High Electron Mobility Transistors
Min Su Cho, Young Jun Yoon, Jun Hyeok Jung, Won Douk Jang, and In Man Kang
Photonics & Electromagnetics Research Symposium (June, 2019)
92. Design of capacitorless DRAM based on strained Si-SiGe core-shell junctionless field-effect transistor for improvement of memory performances
Sang Ho Lee, Young Jun Yoon, Min Su Cho, Jun Hyeok Jung, Won Douk Jang, Hye Jin Mun and In Man Kang
제26회 한국반도체학술대회 (February, 2019)
91. Recessed-Gate GaN MIS-HEMTs Using the Dual Gate Insulator Employing TiO2/SiN
Jun Hyeok Jung, Young Jun Yoon, Min Su Cho, Won Douk Jang, Hye Jin Mun, Sang Ho Lee and In Man Kang
제26회 한국반도체학술대회 (February, 2019)
90. Effect of Grain Boundary on Capacitorless One-Transistor Dynamic Random-Access Memory based on Polysilicon Metal-Oxide-Semiconductor Field-Effect Transistor with Asymmetric Double-gate Structure
Won Douk Jang, Young Jun Yoon, Min Su Cho, Jun Hyeok Jung, Hye Jin Mun, and In Man Kang
Asian Conference on Engineering and Natural Sciences (ACENS) (Jan, 2019)
89. Normally-Off AlGaN/GaN MIS-HEMTs with Dual Gate Insulator Employing TiO2/SiN
Jun Hyeok Jung, Young Jun Yoon, Min Su Cho, Won Douk Jang, Hye Jin Mun, and In Man Kang
Asian Conference on Engineering and Natural Sciences (ACENS) (Jan, 2019)
88. Design and Analysis of the Capacitorless Dynamic Random Access Memory based on Junctionless FinFETs with surrounding storage layer
Min Su Cho, Young Jun Yoon, Jun Hyeok Jung, Won Douk Jang, and In Man Kang
Asian Conference on Engineering and Natural Sciences (ACENS) (Jan, 2019)
87. AlGaN/GaN Heterojunction-based MIS-HEMTs with Effective SiN Passivation Layer for Improving Device Reliability
Young Jun Yoon, Min Su Cho, Jun Hyeok Jung, Won Douk Jang, Hye Jin Mun, and In Man Kang
International Conference on Electronics, Information, and Communication (ICEIC) (Jan, 2019)