130. 3D Stacked Nanosheets-Based Capacitorless DRAM with seperated storage regions
Β Β Β Β Β Β Soo Bean Song, Jin Park, Gang San Yun, Won Suk Koh, Kyeong Min Lim, and In Man KangΒ
Β Β Β Β AWAD (July, 2025)
129. Fabrication of AlGaN/GaN HEMT with Post Metal Annealing and its Electrical Characterisitics by Proton Irradiation
Β Β Β Β Β Β Jin Park, Sang Ho Lee, Min Seok Kim, Seung Ji Bae, Jeong Woo Hong, Gang San Yun, Won Suk Koh, Young Jun Yoon, and In Man KangΒ
Β Β Β Β Β Β μ 32ν νκ΅λ°λ체νμ λν (February, 2025)
128. Simulation on the Electrical Characteristics of Proton-Irradiated AlGaN/GaN HEMT After Hydrogen Passivation
Β Β Β Β Β Β Gang San Yun, Sang Ho Lee, Jin Park, Min Seok Kim, Seung Ji Bae, Jeong Woo Hong, Won Suk Koh, Young Jun Yoon, and In Man KangΒ
Β Β Β Β Β Β μ 32ν νκ΅λ°λ체νμ λν (February, 2025)
127. Simulation of capacitorless dynamic random-access memory based on GAA JLFET with vertically stacked storage layer and underlapped gate structure
Β Β Β Β Β Β Won Suk Koh, Sang Ho Lee, Jin Park, Min Seok Kim, Seung Ji Bae, Jeong Woo Hong, Gang San Yun, and In Man KangΒ
Β Β Β Β Β Β μ 32ν νκ΅λ°λ체νμ λν (February, 2025)