journal2022

179.Simulation of CMOS logic inverter based on vertically stacked polycrystalline silicon nanosheet gate-all-around MOSFET and its electrical characteristics 

       So Ra Min, Sang Ho Lee, Jin Park, Geon Uk Kim, Ga Eon Kang, Jun Hyeok Heo, Young Jun Yoon, Jae Hwa Seo, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee, In Man Kang

        Current Applied Physics  (November, 2022)

178.Analysis and Optimization for Characteristics of Vertical GaN Junctionless MOSFETs Depending on Specifications of GaN Substrates

       Hee Dae An, Sang Ho Lee, Jin Park, So Ra Min, Geon Uk Kim, Young Jun Yoon, Jae Hwa Seo, Min Su Cho, Jaewon Jang, Jin‑Hyuk Bae, Sin‑Hyung Lee, In Man Kang

        Journal of Electrical Engineering & Technology (November, 2022)

177.Organizing Reliable Polymer Electrode Lines in Flexible Neural Networks via Coffee Ring-Free Micromolding in Capillaries

       Min Woo Park, Do-Yun Kim, Ukju An, Jaewon Jang, Jin-Hyuk Bae, In Man Kang and Sin-Hyung Lee

        ACS Applied Materials & Interfaces  (October, 2022)

176.Design of a Capacitorless DRAM Based on Storage Layer Separated Using Separation Oxide and Polycrystalline Silicon

       Geon Uk Kim, Young Jun Yoon, Jae Hwa Seo, Sang Ho Lee, Jin Park, Ga Eon Kang, Jun Hyeok Heo, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee and In Man Kang

        Electronics  (October, 2022)

175.Physico-Chemical Origins of Electrical Characteristics and Instabilities in Solution-Processed ZnSnO Thin-Film Transistors

       Ziyuan Wang, Sang-Hwa Jeon, Yu-Jin Hwang, Sin-Hyung Lee, Jaewon Jang, In Man Kang, Do-Kyung Kim and Jin-Hyuk Bae

        coatings  (October, 2022)

174.Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped Structure

       Hee Dae An, Sang Ho Lee, Jin Park, So Ra Min, Geon Uk Kim, Young Jun Yoon, Jae Hwa Seo, Min Su Cho, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee and In Man Kang

        nanomaterials  (October, 2022)

173.Improved Environment Stability of Y2O3 RRAM Devices with Au Passivated Ag Top Electrodes

       Hae-In Kim, Taehun Lee, Won-Yong Lee, Kyoungdu Kim, Jin-Hyuk Bae, In-Man Kang, Sin-Hyung Lee, Kwangeun Kim and Jaewon Jang

        Materials  (October, 2022)

172.Importance of Structural Relaxation on the Electrical Characteristics and Bias Stability of Solution-Processed ZnSnO Thin-Film Transistors

       Yu-Jin Hwang, Do-Kyung Kim, Sang-Hwa Jeon, Ziyuan Wang, Jaehoon Park, Sin-Hyung Lee, Jaewon Jang, In Man Kang and Jin-Hyuk Bae

        nanomaterials  (September, 2022)

171.Systematic Engineering of Metal Ion Injection in Memristors for Complex Neuromorphic Computing with High Energy Efficiency

       Seong Eun Kim, Min-Hwi Kim, Jisu Jang, Hyungjin Kim, Sungjun Kim, Jaewon Jang, Jin-Hyuk Bae, In Man Kang, and Sin-Hyung Lee

       Advenced Intelligent Systems(September, 2022)

170.3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary’s influence

       Sang Ho Lee, Jin Park, So Ra Min, Geon Uk Kim, Jaewon Jang, Jin‑Hyuk Bae, Sin‑Hyung Lee, and In Man Kang

        Scientifc Reports  (August, 2022) 

169.Viable strategy to minimize trap states of patterned oxide thin films for both exceptional electrical performance and uniformity in sol–gel processed transistors

       Do-Kyung Kim, Kyeong-Ho Seo, Dae-Hyeon Kwon, Sang-Hwa Jeon, Yu-Jin Hwang, Ziyuan Wang, Jaehoon Park, Sin-Hyung Lee, Jaewon Jang , In Man Kang, Xue Zhang, Jin-Hyuk Bae

        Chemical Engineering Journal (August, 2022) 

168.Fabrication and Performances of Recessed Gate AlGaN/GaN MOSFETs with Si3N4/TiO2 Stacked Dual Gate Dielectric

       Hee Dae An, So Ra Min, Sang Ho Lee, Jin Park, Geon Uk Kim, Young Jun Yoon, Jae Hwa Seo, Min Su Cho, Jaewon Jang, Jin-Hyuk Bae, Sin-Hyung Lee, and In Man Kang

         Journal of Semiconductor Technology and Science (April, 2022)

167.Room-Temperature High-Detectivity Flexible Near-Infrared Photodetectors with Chalcogenide Silver Telluride Nanoparticles

       Won-Yong Lee, Kyoungdu Kim, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang, Minsu Park, Kwangeun Kim, and Jaewon Jang

        ACS OMEGA (March, 2022)

166.Enhanced Switching Reliability of Sol–Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field

       Do-Won Kim , Hyeon-Joong Kim, Won-Yong Lee, Kyoungdu Kim, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim and Jaewon Jang  

        Materials (March, 2022)

165.Flexible Sol-Gel—Processed Y2O3 RRAM Devices Obtained via UV/Ozone-Assisted Photochemical Annealing Process

       Hyeon-Joong Kim, Do-Won Kim, Won-Yong Lee, Kyoungdu Kim, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang , Kwangeun Kim and Jaewon Jang  

        Materials (March, 2022)

164.Environmentally and Electrically Stable Sol−Gel-Deposited SnO2 Thin-Film Transistors with Controlled Passivation Layer Diffusion Penetration Depth That Minimizes Mobility Degradation

       Won-Yong Lee, Do Won Kim, Hyeon Joong Kim, Kyoungdu Kim, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, and Jaewon Jang

        ACS Applied Materials & Interfaces (March, 2022)

163.Enhanced switching ratio of sol–gel-processed Y2O3 RRAM device by suppressing oxygen vacancy formation at high annealing temperatures

       Kyoungdu Kim, Changmin Lee, Won-Yong Lee, Do Won Kim, Hyeon Joong Kim, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang and Jaewon Jang

        Semiconductor Science and Technology (January, 2022)

162.Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO2/Si3N4 Dual-Layer Insulator

       So-Ra Min, Min-Su Cho, Sang-Ho Lee, Jin Park, Hee-Dae An ,Geon-Uk Kim, Young-Jun Yoon, Jae-Hwa Seo, Jae-Won Jang, Jin-Hyuk Bae, Sin-Hyung Lee, and In-Man Kang 

        Materials (January, 2022)