Conference2015
[2015]
59. Design and Analysis of Ge/GaAs-based Heterojunctino Gate-All-Around (GAA) Arch-Shaped Tunneling Field-Effect Transistor (TFET)
Jae Hwa Seo, Young Jun Yoon, Jin Su Kim, Ra Hee Kwon, Young In Jang, Hye Rim Eun, Jung-Hee Lee, and In Man Kang
The 9th International Conference on Advanced Materials and Devices (December, 2015)
58. GaN-based junctionless transistor with hetero-gate dielectrics for enhancement of DC and RF performance
Young Jun Yoon, Ra Hee Kwon, Jae Hwa Seo, Jung-Hee Lee, and In Man Kang
The 9th International Conference on Advanced Materials and Devices (December, 2015)
57. The Effect of Dual-Spacer Dielectrics on Low-Power Performance of Sub-10 nm Tunneling Field-Effect Transistor
Young Jun Yoon, Jae Hwa Seo, Seongjae Cho, Hyuck-In Kwon, Jung-Hee Lee, and In Man Kang
The 28th International Microprocesses and Nanotechnology Conference (November, 2015)
56. GaN-based junctionless vertical nanowire transistor using dual-material gate structure for high-power and high-frequency applications
Young Jun Yoon, Jae Hwa Seo, Hee-Sung Kang, Seongjae Cho, Jung-Hee Lee, and In Man Kang
The 13th International Nanotech Symposium & Nano-Convergence Expo (July, 2015)
55. Design Optimization of InAs-Based Gate-All-Aroud (GAA) Arch-shaped Tunneling Field-Effect Transistor (TFET)
Jae Hwa Seo, Young Jun Yoon, Young-Woo Jo, Dong-Hyeok Son, Jin Su Kim, Seongjae Cho, Hyuck-In Kwon, Jung-Hee Lee, and In Man Kang
The 13th International Nanotech Symposium & Nano-Convergence Expo (July, 2015)
54. The study of AlGaN/GaN-based double-heterojunction FinFET for improvement of device performance
Hye Rim Eun, Jae Hwa Seo, Young Jun Yoon, Young In Jang, Jin Su Kim, Hyuck-In Kwon, Seongjae Cho, Jung-Hee Lee and In Man Kang
The 13th International Nanotech Symposium & Nano-Convergence Expo (July, 2015)
53. Design Optimization and Analysis of InGaAs-based Junctionless Fin-Type Field-Effect Transistor with 10 nm Gate Length
Jin Su Kim, Jae Hwa Seo, Young Jun Yoon, Young-Woo Jo, Dong-Hyeok Son, Seongjae Cho, Hyuck-In Kwan, Jung-Hee Lee, and In Man Kang
The 13th International Nanotech Symposium & Nano-Convergence Expo (July, 2015)
52. Sub-10 nm Ge/GaAs Heterojunction-based Tunneling Field-Effect Transistor with Vertical Tunneling Operation
Young Jun Yoon, Jae Hwa Seo, Jin Su Kim, Young Jae Kim, Sung Yoon Kim, Hye Rim Eun, Hye Su Kang, Young In Jang, Ra Hee Kwon, Seongjae Cho,
Hyuck-In Kwo, Jung-Hee Lee, and In Man Kang
2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (June, 2015)
51. Simulation of InN/GaN-based Double-Gate Tunneling Field-Effect Transistor
Jae Hwa Seo, Ra Hee Kwon, Young Jun Yoon, Young-Woo Jo, Ryun-Hwi Kim, Dong-Hyeok Son, Jung-Hee Lee, and In Man Kang
The 7th Asia-Pacific Workshop on Widegap Semiconductors (May 2015)
50. Design and Analysis of Gate recessed AlGaN/GaN Fin-type Field-Effect Transistor
Young In Jang, Jae Hwa Seo, Young Jun Yoon, Hye Rim Eun, Ra Hee Kwon, Jin Su Kim, Jung-Hee Lee, and In Man Kang
The 22th Korean Conference on Semiconductors (February 2015)
49. Device design of P-N Tunneling Field-Effect Transistor based on AlGaSb/InGaAs Heterojunction
Hye Rim Eun, Young Jun Yoon, Jae Hwa Seo, Young In Jang, Jin Su Kim, Jung-Hee Lee, and In Man Kang
The 22th Korean Conference on Semiconductors (February 2015)
48. RF Performance of InGaAs-Based T-gate Junctionless Field-Effect Transistors which Applicable for High Frequency Network Systems
Jae Hwa Seo, Young Jun Yoon, Sung Yoon Kim, Young Jae Kim, and In Man Kang
The 29th International Conference on Information Networking (January 2015)