d. International Symposium on Device Technology for Next-Generation Computing

International Symposium on Device Technology for Next-Generation Computing

September 30 (Friday) 13:00 - 18:20 (Opening 12:30 tentative)

Building 3-s (ENEOS Hall)

Research Center for Advanced Science and Technollogy (RCAST), The University of Tokyo

4-6-1 Komaba, Meguro-Ku, Tokyo, 153-8505 Japan

Scope

High performance computing based on advanced CMOS technology is ever-lasting demand for personal electronics to infrastructures. On the other hand, new applications such as Internet-of-Things, Artificial Intelligence and advanced cyber-security will open up the possibility of new emerging electron devices that renovate System LSI. In this symposium, the directions of new device technologies toward new generation computing are presented by world-leading experts.

In the first session, advanced technologies of CMOS device, memory device, and 3D integration will be shown and discussed. In the second session, emerging device technologies such as memristor device, neuromorphic chip and Si quantum computing will be shown and discussed.

Program (tentative)

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Organizing Committee Members

General Chair: Toshiro Hiramoto (University of Tokyo)

Program Chair: Masaharu Kobayashi (University of Tokyo)

Program Vice Chair: Takahiro Shinada (Tohoku University), Hiroshi Kawaguchi (Kobe University), Shigeru Kawanaka (Toshiba)

Local Arrangement: Masaharu Kobayashi (University of Tokyo)

Secretary: Takahiro Shinada (Tohoku University), Hiroshi Kawaguchi (Kobe University)

Sponsors

Sponsored by

165 Research Committee in Japan Society for the Promotion of Science (JSPS)

Cosponsored by

IEEE Electron Devices Societ Japan Chapter

VDEC, The University of Tokyo

参加者

学会委員9名・産業界委員5名・その他97名(計111名)