b2. International Symposium
International Symposium on Extremely Low Voltage VLSI Devices and Circuits
June 15, Saturday, 2013, 09:00-14:35 (08:40 Open)
Kyoto Research Park Corp. Science Hall (Building No. 1 in Eastern Zone)
134, Chudoji Minami-machi, Shimogyo-ku, Kyoto 600-8813, Japan
http://www.krp.co.jp/english/access/index.html
Scope
Power consumption of semiconductor devices and LSIs in the network system has become a major issue as the cloud computing and IoT (Internet of Things) has become a part of our daily lives. Moreover, research on extremely low voltage VLSI system, which could be applied in a variety of fields such as medical electronics, sensor network, has been conducted intensively. In this symposium, we shed light on the progress on the devices/materials as well as circuit in the system in order to discuss the feature of the LSI systems in the developing fields.
Program
After the symposium, FD-SOI Workshop will be held in the same venue.
Registration
Registration fee: 20,000 Japanese Yen. Pay in cash.
Fill this form to make registration.
Organizing Committee Members
General Chair: Toshiro Hiramoto (University of Tokyo)
Program Chair: Akira Nishiyama (Toshiba)
Program Vice Chairs: Dai Hisamoto (Hitachi), Makoto Takamiya (University of Tokyo)
Secretaries: Takahiro Shinada (AIST), Hiroshi Kawaguchi (Kobe University)
Sponsors
Sponsored by
165 Research Committee in Japan Society for the Promotion of Science (JSPS)
Cosponsored by
IEEE SSCS Kansai Chapter
VDEC, The University of Tokyo
Supported by
Association for JSPS University - Industry Research Cooperation