b2. International Symposium

International Symposium on Extremely Low Voltage VLSI Devices and Circuits

June 15, Saturday, 2013, 09:00-14:35 (08:40 Open)

Kyoto Research Park Corp. Science Hall (Building No. 1 in Eastern Zone)

134, Chudoji Minami-machi, Shimogyo-ku, Kyoto 600-8813, Japan

http://www.krp.co.jp/english/access/index.html

Scope

Power consumption of semiconductor devices and LSIs in the network system has become a major issue as the cloud computing and IoT (Internet of Things) has become a part of our daily lives. Moreover, research on extremely low voltage VLSI system, which could be applied in a variety of fields such as medical electronics, sensor network, has been conducted intensively. In this symposium, we shed light on the progress on the devices/materials as well as circuit in the system in order to discuss the feature of the LSI systems in the developing fields.

Program

After the symposium, FD-SOI Workshop will be held in the same venue.

Registration

Registration fee: 20,000 Japanese Yen. Pay in cash.

Fill this form to make registration.

Organizing Committee Members

General Chair: Toshiro Hiramoto (University of Tokyo)

Program Chair: Akira Nishiyama (Toshiba)

Program Vice Chairs: Dai Hisamoto (Hitachi), Makoto Takamiya (University of Tokyo)

Secretaries: Takahiro Shinada (AIST), Hiroshi Kawaguchi (Kobe University)

Sponsors

Sponsored by

165 Research Committee in Japan Society for the Promotion of Science (JSPS)

Cosponsored by

IEEE SSCS Kansai Chapter

VDEC, The University of Tokyo

Supported by

Association for JSPS University - Industry Research Cooperation