1. W. Cai, M. Takenaka, and S. Takagi
   Improvement of S-factor method for evaluation of MOS interface state density,” Jpn. J. Appl. Phys., Vol. 54, 04DC07, 2015. DOI: 10.7567/JJAP.54.04DC07

2. K. Tanaka, R. Zhang, M. Takenaka, and S. Takagi
   Quantitative evaluation of slow traps near Ge MOS interfaces by using time response of MOS capacitance
   Jpn. J. Appl. Phys., Vol. 54, 04DA02, 2015. DOI: 10.7567/JJAP.54.04DA02

3. W. Kim, M. Takenaka, and S. Takagi
   Properties of ultrathin-body condensation Ge-on-insulator films thinned by additional thermal oxidation
   Jpn. J. Appl. Phys., Vol. 54, 04DA05, 2015. DOI: 10.7567/JJAP.54.04DA05

4. Y.-H. Kim, J. Fujikata, S. Takahashi, M. Takenaka and S. Takagi
   Demonstration of record-low injection-current variable optical attenuator based on strained SiGe with optimized lateral pin junction
   Optics Express, vol. 23(9) pp. 12354-12361 (2015) (10.1364/OE.23.012354)

5. X. Yu, J. Kang, R. Zhang, W.-L. Cai, M. Takenaka and S. Takagi
   Impact of back interface passivation on electrical properties of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs
   Microelectron. Eng., vol. 147, pp. 196-200 (2015). (10.1016/j.mee.2015.04.063)

6. M. Ke, X. Yu, R. Zhang, J. Kang, C. Chang, M. Takenaka and S. Takagi
   Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation
   Microelectron. Eng., vol. 147, pp. 244-248 (2015). (10.1016/j.mee.2015.04.079)

7. S. Takagi, R. Zhang, J. Suh, S.-H. Kim, M. Yokoyama, K. Nishi and M. Takenaka
   III-V/Ge Channel MOS Device Technologies in Nano CMOS era
   Jpn. J. Appl. Phys. 54, 06FA01 (2015) (10.7567/JJAP.54.06FA01)

8. J. Kang, R. Zhang, M. Takenaka, and S. Takagi
   Suppression of Dark Current in GeOx Passivated Germanium Metal-Semiconductor-Metal Photodetector by Plasma Post-Oxidation
   Opt. Exp. Vol. 23, No. 13, pp. 16967-16976 (2015). (10.1364/OE.23.016967)

9. Y.-H. Kim, M. Takenaka and S. Takagi
   Numerical Analysis of Carrier-Depletion Strained SiGe Optical Modulators with Vertical P-N Junction
   IEEE J. Quantum Electron., vol. 51(04), 5200107 (2015). (DOI:10.1109/JQE.2015.2405931)

10. K. Nishi, M. Yokoyama, H. Yokoyama, T. Hoshi, H. Sugiyama, M. Takenaka and S. Takagi
    Effects of buffered HF cleaning on metal-oxide-semiconductor interface properties of Al2O3/InAs/GaSb structures
    Appl. Phys. Express, vol. 8(8), 061203 (2015). (DOI: 10.7567/APEX.8.061203)

11. Y. Cheng, Y. Ikku, M. Takenaka, and S. Takagi
    Surface leakage reduction in MSM InGaAs photodetector on III–V CMOS photonics platform
    IEEE Photonics Technology Letters, vol. 27, no. 14, pp. 1569-1572 (2015). (DOI: 10.1109/LPT.2015.2432052)

12. J. Kang, X. Yu, M. Takenaka and S. Takagi
    Impact of thermal annealing on Ge-on-Insulator substrate fabricated by wafer bonding,
    Materials Science in Semiconductor Processing, vol., (2015). (DOI: 10.1016/j.mssp.2015.07.021)

13. M. Noguchi, S.-H. Kim, M. Yokoyama, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi
    High Ion /Ioff and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctions
    J. Appl. Phys. 118, 045712 (2015) (DOI: 10.1063/1.4927265)

14. C.-Y. Chang, O. Ichikawa, T. Osada, M. Hata, H. Yamada, M. Takenaka, and S. Takagi
    Impact of La2O3 interfacial layers on InGaAs metal-oxide-semiconductor interface properties in Al2O3/La2O3/InGaAs gate stacks deposited by atomic-layer-deposition
    J. Appl. Phys. 118, 085309 (2015) (DOI: 10.1063/1.4929650)

15. W. Cai, M. Takenaka and S. Takagi
    Effectiveness of surface potential fluctuation for representing inversion-layer mobility limited by Coulomb scattering in MOFEETs
    IEEE Electron Device Lett., vol. 36, no. 11 (2015) pp. 1183-1185 (DOI: 10.1109/LED.2015.2477360)

16. J.-K. Suh, N. Taoka, M. Takenaka and S. Takagi
    Effects of additional oxidation after Ge condensation on electrical properties of germanium-on-insulator p-channel MOSFETs
    Solid State Electron., vol. 117, March (2016) pp. 77-87 (DOI: 10.1016/j.sse.2015.11.014)

17. M. Tsujimura, H. Kitai, H. Shiomi, K. Kojima, K. Fukuda, K. Sakamoto, K. Yamasaki, S. Takagi and H. Okumura,
    Analysis of Gate Oxide Nitridation Effect on SiC MOSFETs by Using Hall Measurement and Split C-V Measurement
    Materials Science Forum, ISSN: 1662-9760, Vol. 858, pp. 441-444, 2016. DOI: 10.4028/www.scientific.net/MSF.858.441

18. X. Yu, J. Kang, R. Zhang, M. Takenaka and S. Takagi
    Characterization of ultrathin-body Germanium-on-insulator (GeOI) structures and MOSFETs on flipped Smart-CutTM GeOI substrates
    Solid-State Electronics, Volume 115, Part B, January (2016), pp. 120-125 (DOI: 10.1016/j.sse.2015.08.021)

19. Y.-H. Kim, J. Fujikata, S. Takahashi, M. Takenaka and S. Takagi
    First demonstration of SiGe-based carrier-injection Mach-Zehnder modulator with enhanced plasma dispersion effect
    Opt. Express 24(3), 1979-1985 (2016) (DOI: 10.1364/OE.24.001979)

20. R. Zhang, X. Yu, M. Takenaka and S. Takagi
    Impact of Postdeposition Annealing Ambient on the Mobility of Ge nMOSFETs with 1-nm EOT Al2O3/GeOx/Ge Gate-Stacks
    IEEE Trans. Electron Devices, vol. 63, no. 2 (2016) p. 558-564 (DOI: 10.1109/TED.2015.2509961)

1. X. Yu, J. Kang, R. Zhang, M. Takenaka and S. Takagi
   Mobility improvement of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs on flipped Smart-Cut GeOI substrates
   Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp.161-164, January 26-28, 2015 - Bologna, Italy

2. M.-S. Kim, Y. Wakabayashi, R. Nakane, M. Yokoyama, M. Takenaka and S. Takagi
   Effects of strain, interface states and back bias on electrical characteristics of Ge-source UTB strained-SOI tunnel FETs
   8th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar, Atomically Controlled Processing for Ultralarge Scale Integration pp. 9-10, Jan. 29-30, 2015, Tohoku University, Sendai, Japan

3. Y.-H. Kim, J. Fujikata, S. Takahashi, M. Takenaka and S. Takagi
   SiGe-based carrier-injection Mach-Zehnder modulator with enhanced plasma dispersion effect in strained SiGe
   Optical Fiber Communication Conference (OFC2015), Tu2A.7, Los Angels, 24 March 2015.

4. S. Takagi, R. Zhang, C.-Y. Chang, J.-H. Han, M. Yokoyama and M. Takenaka
   Gate stack technologies for high mobility channel MOSFETs
   2015 MRS Spring Meeting & Exhibit, Sympoium AA, “Materials for Beyond the Roadmap Devices in Logic, Power and Memory April 6-10 (2015), San Francisco, California

5. S. Takagi
   Nano Device Technologies for Ultra Low Power LSIs
   International Nanotechnology Conference on Communication and Cooperation (INC11), May 11-13 (2015), Fukuoka, Japan, p. 27

6. S. Takagi, W.-K. Kim, X. Yu, J.-h. Han, R. Zhang and M. Takenaka
   Ge/SiGe CMOS device technology for future logic LSIs
   E-MRS Spring meeting 2015, Symposium KTransport and photonics in group IV-based nanodevices", Lille (France), May 11-15 (2015)

7. J. Kang, X. Yu, M. Takenaka and S. Takagi
   Impact of Thermal Annealing on Ge-on-Insulator Substrate fabricated by wafer bonding
   E-MRS Spring meeting 2015, Symposium K, "Transport and photonics in group IV-based nanodevices", Lille (France), May 11-15 (2015)

8. S. Takagi, S. H. Kim, Y. Ikku, M. Yokoyama, R. Nakane, J. Li, Y. C. Kao and M. Takenaka
   High Performance III-V-on-Insulator MOSFETs on Si Realized By Direct Wafer Bonding Applicable to Large Wafer Size
   227th Spring meeting of the Electrochemical Society, Symposium H01 “Advanced CMOS-Compatible Semiconductor Devices 17 May 24-28 (2015), Chicago, Illinois, USA, ECS Transactions, 66 (5), pp. 27-35 (2015) (DOI:10.1149/06605.0027ecst)

9. S. Takagi and M. Takenaka
   III-V/Ge MOSFETs and Tunneling FETs on Si platform for Low Power Logic Applications
   13th International Meeting for Future of Electron Devices, Kansai (IMFEDK), p. 18-19, June 4-5, 2015. Ryukoku University Avanti Kyoto Hall, Kyoto, Japan (DOI: 10.1109/IMFEDK.2015.7158488)

10. S. Takagi, M.-S. Kim, M. Noguchi, S.-M. Ji, K. Nishi and M. Takenaka
    III-V and Ge tunneling FET technologies for low power LSIs
    VLSI symposium (2015), p. T22-T23 (DOI: 10.1109/VLSIT.2015.7223687)

11. K. Nishi, M. Yokoyama, H. Yokoyama, T. Hoshi, H. Sugiyama, M. Takenaka, and S. Takagi
    High hole mobility front-gate InAs/InGaSb-OI single structure CMOS on Si
    VLSI symposium (2015), p. T174-T175 (DOI: 10.1109/VLSIT.2015.7223667)

12. M. Takenaka and S. Takagi
    III-V CMOS photonics on Si for high-performance electronic-photonic integrated circuits
    submitted to the International Conference on Materials for Advanced Technologies (ICMAT) 2015, June 28-July 3, Singapore

13. X. Yu, J. Kang, R. Zhang, W.-L. Cai, M. Takenaka and S. Takagi
    Impact of back interface passivation on electrical properties of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs
    19th Conference on "Insulating Films on Semiconductors" (INFOS), pp. 215-216, Udine, Italy, June 29 - July 2, 2015.

14. M. Ke, X. Yu, R. Zhang, J. Kang, C. Chang, M. Takenaka and S. Takagi
    Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation
    19th Conference on "Insulating Films on Semiconductors" (INFOS), pp. 213-214, Udine, Italy, June 29 - July 2, 2015.

15. J. Kang, M. Takenaka, and S. Takagi
    Impact of GeOx passivation on Dark Current for Wafer-bonded Ge-on-Insulator Metal-Semiconductor-Metal Photodetector
    Group IV photonics

16. S. Takagi and M. Takenaka
    Advanced Nano CMOS using Ge/III-V semiconductors for Low Power Logic LSIs
    15th IEEE International Conference on Nanotechnology (2015), pp. 654-658, 27 - 30 JULY 2015 | ROME (ITALY)

17. S. Takagi and M. Takenaka
    Ge/III-V MOS Device Technologies for Low Power Integrated Systems
    45th European Solid-State Device Conference (ESSDERC), pp. 20-25, September 14-18, 2015, Graz, Austria

18. S. Takashima, Y. Ikku, M. Takenaka and S. Takagi
    The influence of III-V on insulator structure on quantum well intermixing
    2015 International Conference on Solid State Devices and Materials, Sapporo (2015), A-7-5, pp. 632-633

19. J.-H. Han, M. Takenaka and S. Takagi
    Void reduction of the direct wafer bonding using atomic layer deposition Al2O3/HfO2 gate stack for MOS optical modulators
    2015 International Conference on Solid State Devices and Materials, Sapporo (2015), A-3-4, pp. 594-595

20. C.-Y. Chang, M. Takenaka and S. Takagi
    Impact of La2O3 interfacial layers on InGaAs MOS interface properties in Al2O3/La2O3/InGaAs gate stacks deposited by ALD
    2015 International Conference on Solid State Devices and Materials, Sapporo (2015), N-5-2, pp. 1130-1131

21. J.-K. Park, M. Takenaka and S. Takagi
    Low-resistivity lateral PIN junction fomed by Ni-InGaAsP alloy for carri-er-injection InGaAsP photonic devices on III-V CMOS photonics platform
    2015 International Conference on Solid State Devices and Materials, Sapporo (2015), PS-7-6, pp. 232-233

22. Y. Cheng, Y. Ikku, M. Takenaka and S. Takagi
    Waveguide InGaAs Metal-semiconductor-metal Photodetector Monolithically Integrated with InP Grating Coupler on III-V CMOS Photonics Platform
    2015 International Conference on Solid State Devices and Materials, Sapporo (2015), A-7-2, pp. 626-627

23. J. Kang, M. Takenaka and S. Takagi
    First Demonstration of Ge Waveguide Platform on Ge-on-Insulator for Mid-Infrared Integrated Photonics
    ECOC

24. S. Takagi, M. Kim, M. Noguchi, K. Nishi, M. Takenaka
    Tunneling FET Device Technologies Using III-V and Ge Materials
    4th Berkeley Symposium on Energy Efficient Electronic Systems (E3S), October 2, 2015, University of California, Berkeley, California, USA,p. 1-2 (DOI: 10.1109/E3S.2015.7336800)

25. S. Takagi
    Tunneling FET Device
    STEEP Transistors Workshop, October 6, 2015, University of Notre Dame, Notre Dame, IN, USA

26. S. Takagi, C. Y. Chang, M. Yokoyama, K. Nishi, R. Zhang, M. Ke, J. H. Han, and M. Takenaka
    MOS Interface Control Technologies for Advanced III-V/ Ge Devices
    228th Fall meeting of the Electrochemical Society, D04 - Semiconductors, Dielectrics, and Metals for Nanoelectronics 13, October 11-16, 2015, Pheonix, AZ, ECS Transactions, 69 (5) p. 37-51 (2015) (DOI: 10.1149/06905.0037ecst)

27. S. Takagi, M. Kim, M. Noguchi, K. Nishi, and M.Takenaka
    Tunneling FET Technologies Using III-V and Ge Materials
    228th Fall meeting of the Electrochemical Society, G04 - ULSI Process Integration 9, October 11-16, 2015, Pheonix, AZ, ECS Transactions, 69 (10) p. 99-108 (2015) (DOI: 10.1149/06910.0099ecst)

28. M. Tsujimura, H. Kitai, H. Shiomi, K. Kojima, K. Fukuda, K. Sakamoto, K. Yamasaki, S. Takagi and H. Okumura
    Analysis of Gate Oxide Nitridation Effect on SiC MOSFETs by Using Hall Measurement and Split C-V Measurement
    16th International Conference on Silicon Carbide and Related Materials (ISCRM), Giardini Naxos, Italy, October 4 - 9, 2015.

29. J.-h. Han, M. Takenaka and S. Takagi
    Improvement of the modulation bandwidth for MOS optical modulators using p-SiGe slab
    Asia Communications and Photonics Conference (ACP), Hong Kong, November 19-23, 2015.

30. S. Takagi and M. Takenaka
    Low Power MOS Device Technologies based on Heterogeneous Integration
    2015 International Electron Devices and Materials Symposia (IEDMS), Nov. 19-20, 2015, at Kun Shan University, Tainan, Taiwan

31. J.-H. Han, M. Takenaka and S. Takagi
    Bandwidth enhancement of Si MOS optical modulators using strained SiGe slab
    5th International Symposium on Photonics and Electronics Convergence (ISPEC2015), P-4, Tokyo, December 2015. 

32. J.-K. Park, M. Takenaka, and S. Takagi   

Ni-InGaAsP alloy for low-resistivity lateral PIN junction formation in carrier-injected InGaAsP photonic devices  

5th International Symposium on Photonics and Electronics Convergence (ISPEC2015), P-46, Tokyo, 1 December 2015. 

33. J. Kang, X. Yu, M. Takenaka, and S. Takagi, 

A novel Ge waveguide platform on Ge-on-Insulator substrate for mid-infrared photonics

5th International Symposium on Photonics and Electronics Convergence (ISPEC2015), P-49, Tokyo, December 2015.

34. K. Takeuchi, Y. Kim, M. Takenaka, and S. Takagi

Simulation of carrier-depletion strained SiGe optical modulators based on interleaved PN junctions

5th International Symposium on Photonics and Electronics Convergence (ISPEC2015), P-52, Tokyo, December 2015. 

35. C.-Y. Chang, M. Takenaka and S. Takagi
    Improvement of Electrical Characteristics of La2O3/InGaAs Gate Stacks by Ultra-thin ALD Al2O3 Capping Layers
    46th IEEE Semiconductor Interface Specialists Conference (SISC) (2015) 7.2

36. M. Ke, X. Yu, M. Takenaka and S. Takagi
    Properties of slow traps of ALD Al2O3/GeOx/Ge gate stacks with plasma post oxidation
    46th IEEE Semiconductor Interface Specialists Conference (SISC) (2015) 8.2

37. M. Takenaka, Y. Kim, J. Han, J. Kang, Y. Ikku, Y. Cheng, J.-K. Park, S.-H Kim, and S. Takagi
    CMOS photonics technologies based on heterogeneous integration of SiGe/Ge and III-V on Si
    IEDM (2015) p. 815-818 (DOI: 10.1109/IEDM.2015.7409809)

38. X. Yu, J. Kang, M. Takenaka and S. Takagi
    Experimental Study on Carrier Transport Properties in Extremely-Thin Body Ge-on-Insulator (GOI) p-MOSFETs with GOI Thickness down to 2 nm
    IEDM (2015) p. 20-23 (DOI: 10.1109/IEDM.2015.740961)

39. M. Ke, X. Yu, M. Takenaka and S. Takagi
    Control of slow traps of ALD Al2O3/Ge-based gate stacks with post plasma process
    9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar, "Atomically Controlled Processing for Ultralarge Scale Integration Tohoku University, Sendai, JAPAN, Jan. 11-12, 2016

40. J. Kang, X. Yu, M. Takenaka and S. Takagi
    Design and Characterization of Ge Passive Waveguide Components and Thermo-optic Effect on Ge-on-Insulator for Mid-Infrared Photonics
    OFC 2016

41. J.-K. Park, M. Takenaka and S. Takagi
    InGaAsP variable optical attenuator with lateral PIN junction formed by Ni-InGaAsP and Zn diffusion on III-V on insulator wafer
    MRS meeting (2016)

1. 高木信一, 金閔洙, 野口宗隆, 池尙珉, 西康一, 竹中充,  " 低消費LSIのためのIII-V族半導体およびGe/ひずみSOIトンネルFETテクノロジー",
   応用物理学会シリコンテクノロジー分科会共催研究集会第184回研究集会「先端CMOSデバイス・プロセス技術（VLSIシンポジウム特集）」, p. 6-11, 2015年8月17日, 甲南大学

2. 高木 信一, 横山 正史，金 相賢，西康一，竹中充，「異種材料接合によるポストシリコンデバイス技術」, 招待講演, 電子情報通信学会ソサイエティ大会，4，東北大学，2015年9月8日. 

3. 韓在勲，竹中充，高木信一,  "貼り合せMOS型光変調器実現に向けたAl2O3/HfO2界面によるボイド低減手法の検討",  第76回応用物理学会秋季学術講演会

4. 高島成也, 一宮佑希, 竹中充, 高木信一,  "III-V-OI基板のパターニングによるボイド低減の検討",  第76回応用物理学会秋季学術講演会

5. M. Ke, X. Yu, R. Zhang, J. Kang, C. Chang, M. Takenaka, and S. Takagi, "Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation", 第76回応用物理学会秋季学術講演会[14a-4C-5]

6. 安大煥, 竹中充, 高木信一, "基板貼り合わせ法によるSi基板上 InGaAs-OI トンネル FET の動作実証", 第76回応用物理学会秋季学術講演会[16a-1C-5]

7. 竹中充, 高木信一, "III-V on SiC 基板を用いた光集積回路プラットフォームの提案", 第76回応用物理学会秋季学術講演会

8. X. Yu, J. Kang, R. Zhang, W.-L. Cai, M. Takenaka and S. Takagi, "Impact of back interface passivation on electrical properties of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs", 第76回応用物理学会秋季学術講演会[13p-4C-6]

9. Rui Zhang Mitsuru Takenaka Shinichi Takagi, "High Mobility Ge CMOS Devices with Ultrathin EOT Gate Stacks Fabricated by Plasma Post Oxidation", 第76回応用物理学会秋季学術講演会[13p-4C-2]

10. Minsoo Kim Yuki K. Wakabayashi Ryosho Nakane Masafumi Yokoyama Mitsuru Takenaka Shinichi Takagi, "[Young Scientist Presentation Award Speech] Effects of strain, interface states and back bias on electrical characteristics of Ge-source UTB strained-SOI tunnel FETs", 第76回応用物理学会秋季学術講演会[16a-1C-1]

11. 玉虓, 亢健, 竹中充,　高木信一, "[招待講演]極薄膜Ge-On-Insulator(GOI) p-MOSFETのキャリア輸送特性", 電子情報通信学会SDM研究会・応用物理学会シリコンテクノロジー分科会共催研究集会「先端CMOSデバイス・プロセス技術（IEDM特集）」, p. 2-5, 2016年 1月28日（木）, 機械振興会館

12. 竹中充, 金栄現, 韓在勲, 亢健, 一宮佑希, 程勇鵬, 朴珍權, 金相賢, 高木信一, "[招待講演]Si 上異種半導体集積によるCMOS フォトニクス
    電子情報通信学会SDM研究会・応用物理学会シリコンテクノロジー分科会共催研究集会「先端CMOSデバイス・プロセス技術（IEDM特集）」, p. 18-20, 2016年 1月28日（木）, 機械振興会館

13. 高木信一, "チャネルエンジニアリングによる高性能トンネルFET", 電気学会ナノエレクトロニクス新機能創出・集積化技術専門員会「トンネル現象を利用したデバイスとその物理」2016年3月9日(水) 13:00〜17:20, 早稲田大学研究開発センター

14. 張志宇, 竹中充, 高木信一, "極薄ALD-Al2O3キャップ層を用いたLa2O3/InGaAs MOS界面の改善", 第63回応用物理学会春季学術講演会[20p-S221-2]

15. 後藤高寛, 満原学, 星拓也, 杉山弘樹, 竹中充, 高木信一, "GaAsSb/InGaAs 縦型トンネルFETの動作実証", 第63回応用物理学会春季学術講演会[20p-S422-12]

16. 関根尚希, 韓在勲, 竹中充, 高木信一, "III-V CMOSフォトニクス・プラットフォーム上空乏型InGaAsP光変調器の検討", 第63回応用物理学会春季学術講演会

17. 韓在勲, 竹中充, 高木信一, "歪SiGe を用いたMOS型光変調器の変調帯域改善 に関する検討, 第63回応用物理学会春季学術講演会

18. 小澤悠平, 竹中充, 高木信一, "コンダクタンス法による二硫化モリブデンMOS界面特性評価", 第63回応用物理学会春季学術講演会[20p-S221-1]

19. 安大煥, 竹中充, 高木信一, "高In組成InGaAs量子井戸を用いたInGaAs QW TFETの電気特性における性能評価", 第63回応用物理学会春季学術講演会[20p-S422-13]

20. 柯夢南, 玉虓, 竹中充, 高木信一, "Al2O3/GeOx/Ge MOS界面の遅い準位密度に与える界面構造の影響", 第63回応用物理学会春季学術講演会[20a-S221-12]

21. 嶋田絢、中根了昌、竹中充、高木信一, "SdH振動を用いたひずみSi pMOSFETにおける価電子帯有効質量の評価", 第63回応用物理学会春季学術講演会[21a-S422-6]

22. 佐々木和哉，竹中充, 高木信一, "光変調器応用に向けたグラフェンスロット導波路の試作", 第63回応用物理学会春季学術講演会

23. 金佑彊, 竹中充, 高木信一, "温度サイクルを減らした酸化濃縮法による高圧縮ひずみ極薄膜Ge-OI 構造の実現", 第63回応用物理学会春季学術講演会[21a-S422-7]