Takagi-Toprasertpong Laboratory
Department of Electrical Engineering and Information Systems, The University of Tokyo
2013年度
Takagi-Takenaka lab(高木・竹中研究室)、Apr 2013 - Mar 2014
学術誌 (Journal)
M. Takenaka, M. Yokoyama, M. Sugiyama, Y. Nakano and S. Takagi
InGaAsP Grating Couplers Using Complementary-Metal-Oxide-Semiconductor-Compatible III-V-On-Insulator on Si
Appl. Phys. Exp. 6 (2013) 042501S.-H. Jeon, N. Taoka, H. Matsumoto, K. Nakano, S. Koyama, H. Kakibayasi, K. Araki, M. Miyashita, K. Izunome, M. Takenaka, and S. Takagi
Impacts of surface roughness reduction in (110) Si substrates by high temperature annealing on electron mobility in n-MOSFETs on (110) Si
Jpn. J. Appl. Phys., Vol. 52, 04CC26, 2013. DOI: 10.7567/JJAP.52.04CC26J. -H. Han, R. Zhang, T. Osada, M. Hata, M. Takenaka, and S. Takagi
Reduction in interface trap density of Al2O3/SiGe gate stack by electron cyclotron resonance plasma post-nitridation
Appl. Phys. Express, 6 (2013) 051302C.-Y. Chang, M. Yokoyama, S.-H. Kim, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks
Microelectronic Engineering, 109 (2013) pp. 28-30R. Zhang, J.-C. Lin, X. Yu, M. Takenaka and S. Takagi
Impact of Plasma Post Oxidation Temperature on Interface Trap Density and Roughness at GeOx/Ge Interfaces
Micoroelectron. Eng. 109 (2013) pp. 97-100J. -H. Han, R. Zhang, T. Osada, M. Hata, M. Takenaka, and S. Takagi
Impact of plasma post-nitridation on HfO2/Al2O3/SiGe gate stacks toward EOT scaling
Microelectronic Engineering,109 (2013) pp. 266-269S. Takagi, R. Zhang, and M. Takenaka
Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties
Micoroelectron. Eng. 109 (2013) pp. 389-395S.-H. Kim, M. Yokoyama, N. Taoka, R. Nakane, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi
Experimental Study on Electron Mobility in InxGa1-xAs-on-insulator Metal-Oxide-Semiconductor Field-Effect Transistors with In content modulation and MOS interface buffer engineering
IEEE Trans. on Nanotechnology, vol. 12, no. 4 (July) p. 621-628 (2013)S.-H. Kim, M. Yokoyama, N. Taoka, R. Nakane, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi
Sub-60 nm Extremely-thin Body InxGa1-xAs-On-Insulator MOSFETs on Si with Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and its scalability
IEEE Trans. Electron Devices, vol. 60, no. 8, (2013) p. 2512-2517Y.-H. Kim, M. Yokoyama, N. Taoka, M. Takenaka and S. Takagi
Ge-rich SiGe-on-Insulator for waveguide optical modulator application fabricated by Ge condensation and regrowth
Optics Express, vol. 21, no. 17 (2013) 19615M. Yokoyama, R. Iida, Y. Ikku, S.-H. Lee, S.-H. Kim, N. Taoka, Y. Urabe, T. Yasuda, H. Takagi, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka and S. Takagi
Formation of III-V-On-Insulator Structures on Si by Direct Wafer Bonding
Semicond. Sci. Technol. 28, vol. 9 (2013) 094009N. Taoka, M. Yokoyama, S. H. Kim, R. Suzuki, S. Lee, R. Iida, T. Hoshii, W. Jevasuwan, T. Maeda, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi
Impact of fermi level pinning due to interface traps inside conduction band on inversion-layer mobility of InxGa1-xAs metal-oxide-semiconductor field effect transistors
IEEE Trans. on Device and Materials Reliability, vol. 13, No. 4, pp. 456-462, 2013 (invited). DOI: 10.1109/TDMR.2013.2289330S. Takagi, Rui Zhang, S.-H. Kim, M. Yokoyama, and M. Takenaka
Performance enhancement technologies in III-V/Ge MOSFETs Ge-based and III-V technologies
ECS Trans., vol. 58, no. 9, pp. 137-148, 2013 (invited). DOI: 10.1149/05809.0137ecstS. Takagi and M. Takenaka
III-V/Ge MOS transistor technologies for future ULSI future IC technology and novel devices
ECS Trans., vol. 54, no. 1, pp. 39-54, 2013 (invited). DOI: 10.1149/05401.0039ecstK. Nishi, M. Yokoyama, S.-H. Kim, H. Yokoyama, M. Takenaka and S. Takagi
Study on electrical properties of metal/GaSb junctions using metal-GaSb alloys
J. Appl. Phys., vol. 115, 034515, 2014. DOI: 10.1063/1.4862486S.-H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
Biaxially strained extremely-thin body In0.53Ga0.47As-on-insulator metal-oxide-semiconductor field-effect transistors on Si substrate and physical understanding on their electron mobility
J. Appl. Phys., vol. 114, 164512, 2013. DOI: 10.1063/1.4828481N. Taoka, M. Yokoyama, S. H. Kim, R. Suzuki, S. Lee, R. Iida, T. Hoshii, W. Jevasuwan, T. Maeda, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi
Impact of fermi level pinning inside conduction band on electron mobility of InGaAs MOSFETs
Appl. Phys. Lett., vol. 103, 143509, 2013. DOI: 10.1063/1.4824474K. Alam, S. Takagi, and M. Takenaka
Analysis and comparison of L-Valley transport in GaAs, GaSb, and Ge ultrathin-body ballistic nMOSFETs
IEEE Trans. Electron Devices, vol. 60, no. 12, pp. 4213 – 4218, 2013. DOI: 10.1109/TED.2013.2285394S.-H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
High-performance InAs-on-insulator n-MOSFETs with Ni-InGaAs S/D realized by contact resistance reduction technology
IEEE Trans. Electron Devices, vol. 60, no. 10, pp. 3342 – 3350, 2013. DOI: 10.1109/TED.2013.2279363S. Takagi, S.-H. Kim, R. Zhang, N. Taoka, M. Yokoyama, and M. Takenaka
Limiting factors of channel mobility in III-V/Ge MOSFETs
ECS Trans., vol. 53, no. 3, pp. 107 - 122, 2013 (invited). DOI: 10.1149/05303.0107ecstS. Takagi, M. Yokoyama, S.-H. Kim, R. Zhang, R. Suzuki, N. Taoka, and M. Takenaka
III-V/Ge CMOS device technologies for high performance logic applications
ECS Trans., vol. 53, no. 3, pp. 85 - 96, 2013 (invited). DOI: 10.1149/05303.0085ecstS. Takagi, R. Zhang, R. Suzuki N. Taoka, M. Yokoyama and M. Takenaka
MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks III-V surface passivation
ECS Trans., vol. 50, no. 4, pp. 107-122, 2013 (invited). DOI: 10.1149/05004.0107ecstR. Zhang, P.-C. Huang, M. Takenaka and S. Takagi
Evidence of layer-by-layer oxidation of Ge surfaces by plasma oxidation through Al2O3
ECS Trans., vol. 50, no. 9, pp. 699-706, 2013. DOI:10.1149/05009.0699ecstS. Takagi, S. H. Kim, M. Yokoyama, R. Zhang, N. Taoka, Y. Urabe, T. Yasuda, H. Yamada, O. Ichikawa, N. Fukuhara, M. Hata, and M. Takenaka
High mobility CMOS technologies using III-V/Ge channels on Si platform
Solid-State Electronics, vol. 88, pp. 2-8, 2013. DOI: 10.1016/j.sse.2013.04.020R. Zhang, J.-C. Lin, X. Yu, M. Takenaka and S. Takagi, “Impact of Plasma Postoxidation Temperature on the Electrical Properties of Al2O3/GeOx/Ge pMOSFETs and nMOSFETs”, IEEE Trans. Electron Devices, vol. 61, no. 2, p. 416-422, 2014.
S. Ono, E. Waki, M. Arai, K. Yamasaki and S. Takagi, “MOS interfacial studies using Hall measurement and Split C-V measurement in n-channel carbon-face 4H-SiC MOSFET”, Materials Science Forum Vols. 778-780, February pp. 571-574, 2014. (DOI: 10.4028/www.scientific.net/MSF.778-780.571)
竹中充, 一宮佑希, 程勇鵬, 金相賢, 高木信一, “III-V CMOS フォトニクスを用いた光電子融合集積回路プラットフォーム技術”, 電子情報通信学会論文誌C, J97-C, No. 3, pp. 95-103, 2014.
M. Yokoyama, K. Nishi, S.-H. Kim, H. Yokoyama, M. Takenaka, and S. Takagi
Self-aligned Ni-GaSb source/drain junctions for GaSb p-channel metal-oxide-semiconductor field-effect transistors
Appl. Phys. Lett., vol. 104, 093509, 2014. DOI: 10.1063/1.4867262
国際会議 (International Conference)
S. Takagi, “III-V and Germanium FET Technologies on Si platform”, Compound Semiconductor International Conference, Frankfurt, Germany, March 18th, 2014 (invited).
Y. Kim, M. Takenaka, T. Osada, M. Hata, S. Takagi
Strain-induced enhancement of free-carrier effects in SiGe for optical modulator and VOA applications,
Optical Fiber Communication Conference (OFC2014), Th1C.4, San Francisco, 13 March 2014. DOI: 10.1364/OFC.2014.Th1C.4Y. Ikku, M.Yokoyama, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
Ultra-small, low-crosstalk, electrically-driven InGaAsP photonic-wire optical switches on III-V CMOS photonics platform,
Optical Fiber Communication Conference (OFC2014), Th2A.66, San Francisco, 13 March 2014. DOI: 10.1364/OFC.2014.Th2A.66M.-S. Kim, Y. Wakabayashi, R. Nakane, M. Yokoyama, M. Takenaka and S. Takagi, “Steep Slope Ge-Source Tunnel FETs with Biaxial Tensile Strain Si Channels”, 7th International WorkShop on New Group IV Semiconductor Nanoelectronics, Tohoku University, Sendai, Jan. 27-28, 2014.
W.-L. Cai, M. Takenaka and S. Takagi
Characterization of interface state properties of strained-Si MOS interfaces by conductance method,
7th International WorkShop on New Group IV Semiconductor Nanoelectronics, P-13, Tohoku University, Sendai, 28 January 2014.S.-H. Kim, M. Yokoyama, R. Nakane, M. Ichikawa, T. Osada, M. Hata, M. Takenaka, S. Takagi
High performance sub-20-nm-channel-length extremely-thin body InAs-on-Insulator tri-gate MOSFETs with high short channel effect immunity and Vth tunability,
International Electron Devices Meeting (IEDM’13), 16.4, Washington D. C., 10 December 2013.R. Zhang, W. Chern, X. Yu, M. Takenaka, J. L. Hoyt, S. Takagi
High mobility strained-Ge pMOSFETs with 0.7-nm ultrathin EOT using plasma post oxidation HfO2/Al2O3/GeOx gate stacks and strain modulation,
International Electron Devices Meeting (IEDM’13), 26.1, Washington D. C., 11 December 2013.M. Noguchi, S. Kim, M. Yokoyama, O.Ichikawa, T. Osada, M. Hata, M. Takenaka, S. Takagi
High Ion/Ioff and low subthreshold slope planar-type InGaAs tunnel FETs with Zn-diffused source junctions,
International Electron Devices Meeting (IEDM’13), 28.1, Washington D. C., 11 December 2013.J.-H. Han, R. Zhang, T. Osada, M. Hata, M. Takenaka, and S. Takagi
Impact of Ge composition on the interface trap density at Al2O3/Si1-xGex MOS interface with plasma post-nitridation,
IEEE Semiconductor Interface Specialists conference (SISC2013), 1.3, Washington D.C., 4 December 2013.K. Nishi, M. Yokoyama, S. H. Kim, H. Yokoyama, M. Takenaka, and S. Takagi
Impact of interfacial InAs layers on GaSb MOS interface properties,
IEEE Semiconductor Interface Specialists conference (SISC2013), 11.11, Washington D.C., 6 December 2013.M. Yokoyama, H. Yokoyama, M. Takenaka, and S. Takagi
Electrical properties of metal/GaSb junctions using metal-GaSb alloys,
IEEE Semiconductor Interface Specialists conference (SISC2013), 9.4, Washington D.C., 6 December 2013.M. Takenaka and S. Takagi
III-V/Ge device engineering for CMOS photonics,
International Conference on Processing & Manufacturing of Advanced Materials (THERMEC2013), L3-5, Las Vegas, 3 December 2013 (invited).M. Takenaka and S. Takagi
Heterogeneous integration for CMOS photonics,
3rd International Symposium on Photonics and Electronics Convergence (ISPEC2013), E-3, Tokyo, 20 November 2013 (invited).T. Kayoda, J. Han, M. Takenaka, and S. Takagi
Feasibility study of high-performance optical modulators using semiconductor-metal transition in graphene,
3rd International Symposium on Photonics and Electronics Convergence (ISPEC2013), P-14, Tokyo, 19 November 2013.T. J. Kang, R. Zhang, M. Takenaka, and S. Takagi
Surface leakage reduction for Ge metal-semiconductor-metal photodetector by GeOx passivation,
3rd International Symposium on Photonics and Electronics Convergence (ISPEC2013), P-18, Tokyo, 19 November 2013.Y. Ikku, M. Yokoyama, M. Noguchi, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
Reduction in crosstalk of carrier-injection mach-zehnder interferometer optical switches by using III-V CMOS photonics platform,
3rd International Symposium on Photonics and Electronics Convergence (ISPEC2013), P-27, Tokyo, 19 November 2013.J. -H. Han, R. Zhang, T. Osada, M. Hata, M. Takenaka, and S. Takagi
EOT scaling of plasma post-nitrided SiGe gate stack for high performance MOS optical modulators,
3rd International Symposium on Photonics and Electronics Convergence (ISPEC2013), P-40, Tokyo, 19 November 2013.Y. Kim, J. Han, M. Takenaka, and S. Takagi
Low temperature Al2O3 surface passivation for carrier injection type Si/strained SiGe/Si waveguide modulator,
3rd International Symposium on Photonics and Electronics Convergence (ISPEC2013), P-41, Tokyo, 19 November 2013.Y. Cheng, Y. Ikku, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
Waveguide InGaAs MSM photodetector for chip-scale optical interconnects on III-V CMOS photonics platform,
Asia Communications and Photonics Conference (ACP2013), ATh3A.4, Beijin, 14 November 2013.S. Takagi, R. Zhang, S.-H. Kim, M. Yokoyama, M. Takenaka
Performance enhancement technologies in III-V/Ge MOSFETS,
224th ECS Meeting, Symposium E12, 2223, San Francisco, 29 October 2013 (invited).S. Takagi, S.-H. Kim, M. Yokoyama, W.-K. Kim, R. Zhang and M. Takenaka
Ultra-thin body MOS device technologies using high mobility channel materials
IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (IEEE S3S’13), 9a.1, Monterey, October 7-10, 2013 (invited).S. Takagi and M. Takenaka
High mobility CMOS technologies using III-V/Ge channels
IEEE Nanotechnology Materials and Devices Conference (NMDC’13), MP-CK-3, Tainan, 7 October 2013 (invited).S. Ono, E. Waki, M. Arai, K. Yamasaki and S. Takagi, “MOS interfacial studies using Hall measurement and Split C-V measurement in n-channel carbon-face 4H-SiC MOSFET”, the International Conference on Silicon Carbide and Related Materials 2013, Tu-P-34, Phoenix Seagaia Resort, Miyazaki, Japan, September 29 - October 4, 2013.
S.-H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
Physical understanding of electron mobility in uniaxially strained InGaAs-OI MOSFETs,
43rd European Solid-State Device Research Conference (ESSDERC’13), B4L-A1, Bucharest, 18 September 2013.Y. Ikku, M. Yokoyama, N. Noguchi, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
Low-crosstalk 2 ´ 2 InGaAsP photonic-wire optical switches using III-V CMOS photonics platform,
European Conference on Optical Communication (ECOC’13), London, P.2.19, 24 September 2013.S. Takagi, “High Mobility Channel CMOS Technology”, International Conference on Solid State Devices and Materials (SSDM2013) Short Course - A. Fundamentals on Advanced CMOS/Memory technologies, Fukuoka, Japan, September 24 (2013)
M. Yokoyama, H. Yokoyama, M. Takenaka, and S. Takagi
GaSb-on-insulator metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding technology
International Conference on Solid State Devices and Materials (SSDM2013), PS-6-33, Fukuoka, 26 September 2013 (Late News).M. Kim, Y. Wakabayashi, R. Nakane, M. Yokoyama, M. Takenaka and S. Takagi
Electrical characteristics of Ge/Si hetero-junction tunnel field-effect transistors and their post annealing effects
International Conference on Solid State Devices and Materials (SSDM2013), B-6-2, Fukuoka, 27 September 2013.W. K. Kim, Y. Kin, Y. H. Kim, S.H. Kim, T. Osada, M. Hata, M. Takenaka, and S. Takagi
Sb-diffused source/drain ultra-thin body Ge-on insulator nMOSFETs fabricated by Ge condensation
International Conference on Solid State Devices and Materials (SSDM2013), D-6-5L, Fukuoka, 27 September 2013 (Late News).Y. Kim, J. Han, M. Takenaka and S. Takagi
Low temperature surface passivation for carrier injection type SiGe optical modulator,
International Conference on Group IV Photonics (GFP2013), ThD4, Seoul, 29 August 2013.T. Kayoda, J. Han, M. Takenaka and S. Takagi
Evaluation of Chemical potential for graphene optical modulators based on the semiconductor-metal transition,
International Conference on Group IV Photonics (GFP2013), ThD5, Seoul, 29 August 2013.J. Kang, R. Zhang, M. Takenaka and S. Takagi
Dark current suppression for germanium metal-semiconductor-metal photodetector by plasma post-oxidation passivation,
International Conference on Group IV Photonics (GFP2013), FA6, Seoul, 30 August 2013.S. Takagi, R. Zhang, R. Suzuki, C.-Y. Chang, N. Taoka, S.-H. Kim, M. Yokoyama and M. Takenaka, “III-V/Ge MOS Interface Control Using and High k Films”, 15th Asian Chemical Congress (15ACC), Resorts World Sentosa, Singapore, Aug 19-23, 2013 (invited).
S. Takagi and M. Takenaka
III-V/Ge MOS transistor technologies for future ULSI,
International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT 4’13), c, 11 July 2013 (invited).S. Takagi, R. Zhang, and M. Takenaka
Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties,
18th Conference on Insulating Films on Semiconductors (INFOS’13), Cracow, 26 June 2013 (Plenary).R. Zhang, Ju-Chin Lin, X. Yu, M. Takenaka, and S. Takagi
Impact of plasma post oxidation temperature on interface trap density and roughness at GeOx/Ge interfaces,
18th Conference on Insulating Films on Semiconductors (INFOS’13), Cracow, 26 June 2013.J. -H. Han, R. Zhang, T. Osada, M. Hata, M. Takenaka, and S. Takagi
Impact of plasma post-nitridation on HfO2/Al2O3/SiGe gate stacks toward EOT scaling,
18th Conference on Insulating Films on Semiconductors (INFOS’13), Cracow, 27 June 2013.C.-Y. Chang, M. Yokoyama, S.-H. Kim, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks,
18th Conference on Insulating Films on Semiconductors (INFOS’13), Cracow, 27 June 2013.R. Zhang, J-C. Lin, X. Yu, M. Takenaka, and S. Takagi
Examination of physical origins limiting effective mobility of Ge MOSFETs and the improvement by atomic deuterium annealing,
VLSI Symposium., 3.1, Kyoto, 11 June 2013.S. H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
Strained extremely-thin body In0.53Ga0.47As-On-Insulator MOSFETs on Si substrates,
VLSI Symposium, 5.1, Kyoto, 11 June 2013.S. H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
High performance extremely-thin body InAs-On-Insulator MOSFETs on Si with Ni-InGaAs metal S/D by contact resistance reduction technology,
VLSI Symposium, 5.2, Kyoto, 11 June 2013.W.-L. Cai, M. Takenaka, and S. Takagi
Evaluation of interface state density of strained-Si MOS interfaces by conductance method,
Silicon Nanoelectronics Workshop (SNW2013), 3-4, Kyoto, 9 June 2013.S. Takagi, R. Zhang, and M. Takenaka
High quality Ge gate stacks technologies by using plasma oxidation,
JSPS Core-to-Core Program Seminar, “Atomically Controlled Processing for Ultralarge Scale Integration”, Fukuoka, June 6th, 2013 (invited).Y. H. Kim, T. Osada, M. Hata, M. Takenaka, S. Takagi
Evaluation of propagation loss of Si/SiGe/Si photonic-wire waveguides for Si based optical modulator,
8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8), pp. 213-214, Fukuoka, 3 June 2013.M. Kim, Y. H. Kim, M. Yokoyama, R. Nakane, S. H. Kim, M. Takenaka and S. Takagi
Tunnel field-effect transistors with germanium/strained-silicon hetero-junctions for low power applications,
8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8), pp. 197-198, Fukuoka, 3 June 2013.N. Yoshida, E. Waki, M. Arai, K. Yamazaki, M. Takenaka, and S. Takagi
Extraction of interface state density at SiO2/SiC interfaces based on impedance measurements with different temperatures,
6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI), pp. 307-308, Fukuoka, 4 June 2013.J.-C. Lin, R. Zhang, N. Taoka, M. Takenaka, and S. Takagi
Characterization of interface properties of Au/Al2O3/GeOx/Ge MOS Structures,
6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI), pp. 115-116, Fukuoka, 6 June 2013.K. Alam, S. Takagi, and M. Takenaka
Thickness dependent performance of (111) GaAs UTB nMOSFETs,
16th International Workshop on Computational Electronics (IWCE’13), pp. 136 - 137, Nara, 4 June 2013.S. Takagi, M. Yokoyama, S.-H. Kim, R. Zhang, R. Suzuki, N. Taoka, and M. Takenaka
III-V/Ge CMOS device technologies for high performance logic applications,
223rd ECS Meeting, Symposium E5, 856, Toronto, May 2013 (invited).S. Takagi, S.-H. Kim, R. Zhang, N. Taoka, M. Yokoyama, and M. Takenaka
Limiting factors of channel mobility in III-V/Ge MOSFETs,
223rd ECS Meeting, Symposium E5, 858, Toronto, 13 May 2013 (invited).S. H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi
Analysis on channel thickness fluctuation scattering in InGaAs-OI MOSFETs,
Indium Phosphide and Related Materials (IPRM2013), WeD1-3, Kobe, 22 May 2013.M. Yokoyama, Y. Asakuar, H. Yokoyama, M. Takenaka, and S. Takagi
Impact of Al2O3 ALD temperature on Al2O3/GaSb metal-oxide-semiconductor interface properties,
Indium Phosphide and Related Materials (IPRM2013), WeD1-4, Kobe, 22 May 2013.S. Takagi and M. Takenaka, “III-V/Ge CMOS device technologies”, 20th Symposium on Nano Device Technology (SNDT), International Conference Hall of NDL, Hsinchu, Taiwan, April 25-26 (2013) (invited).
M. Takenaka, R. Zhang, S. Takagi
MOS interface engineering for high-mobility Ge CMOS,
IEEE International Reliability Physics Symposium (IRPS’13), 4C.1, Monterey, 17 April 2013 (invited).S. Takagi, R. Zhang, N. Taoka1, R. Suzuki, S.-H. Kim, M. Yokoyama, and M. Takenaka
MOS interface control in III-V/Ge gate stacks and the impact on MOSFET performance,
MRS Spring Meeting, CC1.04, San Francisco, 2 April 2013 (invited).
国内学会 (Japanese Domestic Conference)
金栄現, 長田剛規, 秦雅彦, 竹中充, 高木信一, "歪SiGe 光変調器における歪誘起自由キャリア効果の増大", 2014年春季第61回応用物理学会学術講演会,19a-F8-9,青山学院大学相模原キャンパス,2014年3月19日.
一宮佑希, 横山正史, 野口宗隆, 市川磨, 長田剛規, 秦雅彦, 竹中充, 高木信一, "InGaAsP細線導波路光スイッチにおける低クロストーク動作", 2014年春季第61回応用物理学会学術講演会,17p-PA2-8,青山学院大学相模原キャンパス,2014年3月17日.
程勇鵬, 一宮佑希, 市川磨, 長田剛規, 秦雅彦, 竹中充, 高木信一, "III-V CMOSフォトニクス•プラットフォーム上導波路型InGaAs MSMフォトディテクタの作製", 2014年春季第61回応用物理学会学術講演会,17p-PA2-9,青山学院大学相模原キャンパス,2014年3月17日.
倉持美沙,竹中充,一宮佑希,高木信一, "量子井戸インターミキシグを用いた III-V CMOSフォトニクス用マルチバンドギャップ貼り合せ基板の作製", 2014年春季第61回応用物理学会学術講演会,20a-F8-10,青山学院大学相模原キャンパス,2014年3月20日.
韓在勲,張睿,長田剛規,秦雅彦,竹中充,高木信一, "プラズマ後窒化によるAl2O3/SiGe MOS界面改善のGe組成依存性", 2014年春季第61回応用物理学会学術講演会,18p-D8-8,青山学院大学相模原キャンパス,2014年3月18日.
金佑彊, 金栄現, 金相賢, 長田剛規, 秦雅彦, 竹中充, 高木信一, "Sb拡散ソース・ドレインを有する酸化濃縮基板上反転型極薄膜Ge-on-Insulator nMOSFET", 2014年春季第61回応用物理学会学術講演会,18p-PA12-5,青山学院大学相模原キャンパス,2014年3月18日.
朝倉佑吏, 韓在勲, 荒木浩司, 宮下守也, 泉妻宏治, 竹中充, 高木信一, "高温Ar熱処理Si基板上 (100) pMOSFETの正孔移動度向上機構", 2014年春季第61回応用物理学会学術講演会,18p-PA12-2,青山学院大学相模原キャンパス,2014年3月18日.
西康一, 金相賢, 横山正史, 横山春喜, 竹中充, 高木信一, "金属GaSb合金を用いた金属/GaSb接合の電気特性", 2014年春季第61回応用物理学会学術講演会,19p-F12-19,青山学院大学相模原キャンパス,2014年3月19日.
浅野孝典, 田岡紀之, 加藤公彦, 坂下満男, 張睿, 横山正史, 竹中充, 中塚理, 高木信一, 財満鎭明, “nチャネルGe1−xSnx MOSFETの電流-電圧特性へのSn組成の影響”, 2014年春季第61回応用物理学会学術講演会,18p-F6-17,青山学院大学相模原キャンパス,2014年3月18日.
田中克久,張睿,竹中充,高木信一, "容量値の時間応答を利用したGe MOS界面における遅い準位の定量的評価", 2014年春季第61回応用物理学会学術講演会,18p-D8-7,青山学院大学相模原キャンパス,2014年3月18日.
横山正史, 西康一, 横山春喜, 竹中充, 高木信一, "基板貼り合わせ法によるGaSb-OI on Si基板の作製とGaSb-OI p-MOSFETの動作実証", 2014年春季第61回応用物理学会学術講演会,19p-F12-20,青山学院大学相模原キャンパス,2014年3月19日.
張睿,Winston Chern,玉虓,竹中充,Hoyt Judy,高木信一, "High mobility strained-Ge pMOSFETs with 0.7-nm ultrathin EOT using plasma post oxidation HfO2/Al2O3/GeOx Gate Stacks", 2014年春季第61回応用物理学会学術講演会,19p-F12-15,青山学院大学相模原キャンパス,2014年3月19日.
金ミンス,若林勇希,中根了昌,横山正史,竹中充,高木信一, "Type-II staggered hetero-junction tunnel FETs with Ge sources and biaxial tensile strain Si channels", 2014年春季第61回応用物理学会学術講演会,19p-PG4-4,青山学院大学相模原キャンパス,2014年3月19日.
W.-L. Cai, M. Takenaka, and S. Takagi, "Effects of biaxially-tensile strain on properties of Si/SiO2 interface states generated by electrical stress", 2014年春季第61回応用物理学会学術講演会,18a-D8-6,青山学院大学相模原キャンパス,2014年3月18日.
X. Yu, R. Zhang, J. Kang, T. Maeda, T. Itatani, T. Osada, M. Hata, M. Takenaka, and S. Takagi, "Ultrathin body Germanium-on-insulator (GeOI) MOSFETs fabricated by transfer of epitaxial Ge films on III-V substrates", 2014年春季第61回応用物理学会学術講演会,19p-F12-14,青山学院大学相模原キャンパス,2014年3月19日.
金相賢,横山正史,中根了昌,市川磨,長田剛規,秦雅彦,竹中充,高木信一, "強い短チャネル効果耐性と閾値変調性を持つ極薄膜InAs-on-Insulator Tri-Gate MOSFET", (招待講演), 応用物理学会シリコンテクノロジー分科会第 167 回研究集会/電子情報通信学会シリコン材料・デバイス研究会 1 月研究会,機械振興会館,2014年1月29日.
竹中充、高木信一, "異種半導体集積を用いたCMOSフォトニクス", (招待講演), レーザー学会第34回年次大会,21aI.5, 北九州国際会議場,小倉, 2014年1月21日.
高木信一, “低消費電力CMOSのため高移動度チャネルトランジスタ技術”, 第29回 (2013) 京都賞記念ワークショップ 先端技術部門「集積回路の発展50年とその未来-超高集積メモリ・省電力LSI に向けてー」, (招待講演), 国立京都際会館, 2013年11月12日.
金栄現、韓在勲、竹中充、高木信一, "Si /歪SiGe/Si導波路コア・キャリア注入型光変調器に向けた低温表面パシベーション", 電子情報通信学会第20回シリコンフォトニクス研究会,P18, 東京工業大学大岡山キャンパス, 2013年10月18日.
韓在勲、張睿、長田剛規、秦雅彦、竹中充、高木信一, "MOS光変調器の高性能化に向けたプラズマ後窒化SiGeゲートスタックのEOTスケーリング", 電子情報通信学会第20回シリコンフォトニクス研究会,P14, 東京工業大学大岡山キャンパス, 2013年10月18日.
嘉陽田達矢、韓在勲、竹中充、高木信一, "半導体-金属遷移を利用したグラフェン光変調器の実現に向けたグラフェン中化学ポテンシャルの評価", 電子情報通信学会第20回シリコンフォトニクス研究会,P17, 東京工業大学大岡山キャンパス, 2013年10月18日.
亢健, 張睿、竹中充、高木信一, "GeOxパッシベーションによるGe MSM受光器の暗電流削減", 電子情報通信学会第20回シリコンフォトニクス研究会,P15, 東京工業大学大岡山キャンパス, 2013年10月18日.
蔡 偉立,竹中 充,高木信一, "Evaluation of Interface State Density of Strained-Si MOS Interfaces by Conductance Method", 2013年秋季第74回応用物理学会学術講演会,17a-B5-6,同志社大学京田辺キャンパス,2013年9月17日.
嘉陽田達矢,韓 在勲,竹中 充,高木信一, "半導体-金属遷移を利用したグラフェン光変調器の検討",2013年秋季第74回応用物理学会学術講演会,19a-P2-18,同志社大学京田辺キャンパス,2013年9月19日.
横山正史,横山春喜,竹中 充,高木信一, "InAs層の導入によるAl2O3/GaSb MOS界面特性の改善", 2013年秋季第74回応用物理学会学術講演会,17a-B5-9,同志社大学京田辺キャンパス,2013年9月17日.
金 栄現,韓 在勲,竹中 充,高木信一, "歪SiGeキャリア注入型光変調器に向けた低温パシベーション", 2013年秋季第74回応用物理学会学術講演会,19a-P2-22,同志社大学京田辺キャンパス,2013年9月19日.
林汝靜,張睿,田岡紀之,竹中 充,高木信一, "Characterization of Interface Traps in Au/Al2O3/GeOx/Ge MOS Structures", 2013年秋季第74回応用物理学会学術講演会,18p-P9-1,同志社大学京田辺キャンパス,2013年9月18日.
張睿,林汝静,玉虓,竹中 充,高木信一, "Suppression of Surface States inside Conduction Band and Effective Mobility Improvement of Ge nMOSFETs by Atomic Deuterium Annealing", 2013年秋季第74回応用物理学会学術講演会,17p-B5-20,同志社大学京田辺キャンパス,2013年9月17日.
西 康一,金 相賢,横山正史,横山春喜,竹中 充,高木信一, "GaSb pMOSFETのMetal Source/Drainに向けたNi-GaSb/GaSbショットキー接合の低温における形成", 2013年秋季第74回応用物理学会学術講演会,19p-C8-12,同志社大学京田辺キャンパス,2013年9月19日.
キム ミンス,若林勇希,中根了昌,横山正史,竹中 充,高木信一, "Electrical Characteristics of Ge/Si Hetero-Junction Tunnel Field-Effect Transistors and their Post Annealing Effects", 2013年秋季第74回応用物理学会学術講演会,19a-P5-12,同志社大学京田辺キャンパス,2013年9月19日.
韓 在勲,張睿,長田剛規,畑 雅彦,竹中 充,高木信一, "プラズマ後窒化によるHfO2/Al2O3/SiGeゲートスタックのEOTスケーリングに関する検討", 2013年秋季第74回応用物理学会学術講演会,17p-B5-8,同志社大学京田辺キャンパス,2013年9月17日.
一宮佑希,野口宗隆,横山正史,市川 磨,長田剛規,秦 雅彦,竹中 充,高木信一," InGaAsP細線導波路光スイッチに向けたZn拡散によるp+InGaAsPの形成", 2013年秋季第74回応用物理学会学術講演会,19a-P2-15,同志社大学京田辺キャンパス,2013年9月19日.
金 佑彊,忻 宇飛,金 栄現,金 相賢,長田剛規,秦 雅彦,竹中 充,高木信一, "酸化濃縮基板へのSb ドーピングにより作製した極薄膜Ge-on-Insulator nMOSFETs", 2013年秋季第74回応用物理学会学術講演会,18p-P10-2,同志社大学京田辺キャンパス,2013年9月18日.
中山大樹、大野武雄、張睿、高木信一、寒川誠, “低温・超損傷中性粒子ビーム酸化を用いたGeOx薄膜構造の制御”, 2013年秋季第74回応用物理学会学術講演会,17p-B5-13, 同志社大学京田辺キャンパス,2013年9月17日.
高木信一, “ポストSiスケーリング材料・デバイス技術動向”, 平成25年度先端電子材料・デバイス技術フォーラム、電子情報技術産業協会(JEITA)会議室、2013年7月23日 (招待講演)
竹中 充,高木信一, "III-V/Ge CMOSフォトニクス実現に向けたデバイス技術", 電気化学会電子材料委員会第77回半導体・集積回路技術シンポジウム,東京工業大学,2013年7月11日(招待講演)
張志宇, 横山正史, 金相賢, 市川磨, 長田剛規, 秦雅彦, 竹中充, 高木信一, “InGaAs MOSゲートスタックの電気特性に与えるメタルゲート電極の影響”, 電子情報通信学会シリコン材料・デバイス研究会 (SDM) ゲート絶縁薄膜、容量膜、機能膜およびメモリ技術, 機械振興会館, 2013年6月18日.