M. Takenaka, J.-H. Han, F. Boeuf, J.-K. Park, Q. Li, C. P. Ho, D. Lyu, S. Ohno, J. Fujikata, S. Takahashi, and S. Takagi, “III-V/Si hybrid MOS optical phase shifter for Si photonic integrated circuits,” IEEE/OSA Journal of Lightwave Technology, vol. 37, no. 5, pp. 1474–1483, March 2019 (invited). DOI: 10.1109/JLT.2019.2892752

高木信一, 加藤公彦, 安 大煥, 後藤高寛, 松村 亮, 高口遼太郎, 竹中 充, “材料エンジニアリングによるトンネル電界効果トランジスタの高性能化,” 電子情報通信学会和文論文誌C, vol. J102-C, no. 3, pp. 61–69, 2019 (invited).

M. Yokoyama, H. Yokoyama, M. Takenaka, and S. Takagi, “InGaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding,” J. Appl. Phys., vol. 125, 114501, 2019. DOI: 10.1063/1.5049518

M. Ke, M. Takenaka, and S. Takagi, “Slow trap properties and generation in Al2O3/GeOx/Ge MOS interfaces formed by plasma oxidation process,” ACS Applied Electronic Materials, vol. 1, no. 3, pp. 311–317, 2019. DOI: 10.1021/acsaelm.8b00071

T. Fujigaki, S. Takagi, and M. Takenaka, “High-efficiency Ge thermo-optic phase shifter on Ge-on-insulator platform,” Optics Express, vol. 27, no. 5, pp. 6451–6458, 2019. DOI: 10.1364/OE.27.006451

K.-W. Jo, W.-K. Kim, M. Takenaka, and S. Takagi “Impact of SiGe layer thickness in starting substrates on strained Ge-on-insulator pMOSFETs fabricated by Ge condensation method,” Appl. Phys. Lett., vol. 114, 062101, 2019. DOI: 10.1063/1.5068713

S. Takagi, W.-K. Kim, K.-W. Jo, R. Matsumura, R. Takaguchi, T. Katoh, T.-E. Bae, K. Kato and M. Takenaka, “Ultrathin-body Ge-On-Insulator MOSFET and TFET technologies,” ECS Trans., vol. 86, no. 7, pp. 75–86, 2018 (invited). DOI: 10.1149/08607.0075ecst

S. Takagi, D.-H. Ahn, T. Gotow, C. Yokoyama, C.-Y. Chang, K. Endo, K. Katoh, and M. Takenaka, “Ultra-low power III-V-based MOSFETs and tunneling FETs,” ECS Trans., vol. 85, no. 8, pp. 27–37, 2018 (invited). DOI:10.1149/08508.0027ecst

Q. Li, J.-H. Han, C. P. Ho, S. Takagi, and M. Takenaka, “Ultra-power-efficient 2 × 2 Si Mach-Zehnder interferometer optical switch based on III-V/Si hybrid MOS phase shifter,” Optics Express, vol. 26, no. 26, pp. 35003–35012, 2018. DOI: 10.1364/OE.26.035003

J. Kang, S. Takagi, and M. Takenaka, “Ge photodetector monolithically integrated with amorphous Si waveguide on wafer-bonded Ge-on-insulator substrate,” Optics Express, vol. 26, no. 23, pp. 30546–30555, 2018. DOI: 10.1364/OE.26.030546

P.-C. Huang, T. Tanamoto, M. Goto, M. Takenaka, and S. Takagi, “Investigation of electrical characteristics of vertical junction Si n-type Tunnel FET,” IEEE Trans. Electron Devices, vol. 65, no. 12, pp. 5511–5517, 2018. DOI: 10.1109/TED.2018.2874534

M. Ke, M. Takenaka, and S. Takagi, “Impact of atomic layer deposition high k films on slow trap density in Ge MOS interfaces with GeOx interfacial layers formed by plasma pre-oxidation,” IEEE Journal of the Electron Devices Society, vol. 6, No. 1, 950– 955, 2018. DOI: 10.1109/JEDS.2018.2822758

T.-E. Bae, K. Kato, R. Suzuki, R. Nakane, M. Takenaka, and S. Takagi “Influence of impurity concentration in Ge sources on electrical properties of Ge/Si hetero-junction tunneling field-effect transistors,” Appl. Phys. Lett., vol. 113, 062103, 2018. DOI: 10.1063/1.5028529

C. P. Ho, Z. Zhao, Q. Li, S. Takagi, and M. Takenaka, “Tunable grating coupler by thermal actuation and thermo-optic effect,” IEEE Photonics Technology Letters, Vol. 30, No. 17, pp. 1503–1506, 2018. DOI: 10.1109/LPT.2018.2857469

S.-H. Yoon, D.-H. Ahn, M. Takenaka, and S. Takagi, “Relationship between interface state generation and substrate hole current in InGaAs metal-oxide-semiconductor (MOS) interfaces,” J. Appl. Phys., vol. 123, 234502, 2018. DOI: 10.1063/1.5031052

K. Kato, H. Matsui, H. Tabata, M. Takenaka, and S. Takagi, “TiN/Al2O3/ZnO gate stack engineering for top-gate thin film transistors by combination of post oxidation and annealing,” Appl. Phys. Lett., vol. 112, 162105, 2018. DOI: 10.1063/1.5020080

C. Yokoyama, C.-Y. Chang, M. Takenaka, and S. Takagi, “Pre-treatment effects on high-k/InxGa1-xAs MOS interface properties and their physical model,” IEEE Journal of the Electron Devices Society, vol. 6, No. 1, 487– 493, 2018. DOI: 10.1109/JEDS.2017.2760344

S. Glass, K. Kato, L. Kibkalo, J.-M. Hartmann, S. Takagi, D. Buca, S. Mantl and Q.-T. Zhao, “A novel gate-normal tunneling field-effect transistor with dual-metal gate,” IEEE Journal of the Electron Devices Society, vol. 6, No. 1, 1070– 1076, 2018. DOI: 10.1109/JEDS.2018.2864581

J. Kang, S. Takagi, and M. Takenaka, “Design and characterization of Ge passive waveguide components on Ge-on-insulator wafer for mid-infrared photonics,” Jpn. J. Appl. Phys., vol. 57, 042202, 2018. DOI: 10.7567/JJAP.57.042202

Y. Yamaguchi, S. Takagi and M. Takenaka, “Low-loss graphene-based optical phase modulator operating at mid-infrared wavelength,” Jpn. J. Appl. Phys., vol. 57, 04FH06, 2018. DOI: 10.7567/JJAP.57.04FH06

T. Katoh, R. Matsumura, R. Takaguchi, M. Takenaka and S. Takagi, “Performance enhancement of GOI tunneling FETs with source junctions formed by low energy BF2 ion implantation,” Jpn. J. Appl. Phys, vol. 57, 04FD15, 2018. DOI: 10.7567/JJAP.57.04FD15

T.-E. Bae, Y. Wakabayashi, R. Nakane, M. Takenaka, and S. Takagi, “Effects of Annealing Gas and Drain Doping Concentration on Electrical Properties of Ge-source/Si-channel hetero-junction tunneling FETs,” Jpn. J. Appl. Phys., vol. 57, 04FD11, 2018. DOI: 10.7567/JJAP.57.04FD11

R. Takaguchi, R. Matsumura, T. Katoh, M. Takenaka, and S. Takagi, “Ge p-channel tunneling FETs with steep phosphorus profile source junctions,” Jpn. J. Appl. Phys., vol. 57, 04FD10, 2018. DOI: 10.7567/JJAP.57.04FD10

R. Matsumura, T. Katoh, R. Takaguchi, M. Takenaka, and S. Takagi, “Ge-on-insulator tunneling FET with abrupt source junction formed by utilizing snowplow effect of NiGe,” Jpn. J. Appl. Phys., vol. 57, 04FD05, 2018. DOI: 10.7567/JJAP.57.04FD05

K. Kukita, T. Uechi, J. Shimokawa, M. Goto, Y. Yokota, S. Kawanaka, T. Tanamoto, H. Tanimoto and S. Takagi, “Simulation of planar single-gate Si tunnel FET with average subthreshold swing of less than 60 mV/decade for 0.3 V operation,” Jpn. J. Appl. Phys., vol. 57, 04FD09, 2018. DOI: 10.7567/JJAP.57.04FD09

Q. Li, C. P. Ho, S. Takagi, and M. Takenaka, “Efficient Optical Modulator by Reverse-biased III-V/Si Hybrid MOS Capacitor based on FK Effect and Carrier Depletion,” Optical Fiber Communication Conference (OFC2019), M4A.2, San Diego, 3–7 March 2019.

K. Kato, H. Matsui, H. Tabata, M. Takenaka, and S. Takagi, “Material design of oxide-semiconductor/group-IV-semiconductor bilayer tunneling field effect transistors,” Electron Devices Technology and Manufacturing Conference (EDTM2019), Singapore, 13–15 March 2019.

C.-M. Lim, M. Takenaka, and S. Takagi, “Improvement of material quality of (100) and (111) Ge-on-insulator substrates fabricated by smart-cut technology,” Electron Devices Technology and Manufacturing Conference (EDTM2019), Singapore, 13–15 March 2019.

S.-H. Yoon, D.-H. Ahn, C. Yokoyama, M. Takenaka, and S. Takagi, “Correlation of interface state generation and InGaAs MOS interface properties,” 49th IEEE Semiconductor Interface Specialists Conference (SISC), 3.2, San Diego, 5–8 December 2018.

D.-H. Ahn, S.-H. Yoon, K. Kato, T. Fukui, M. Takenaka, and S. Takagi, “EOT scaling of planar-type InGaAs TFETs by using W/ZrO2/Al2O3 gate stacks,” 49th IEEE Semiconductor Interface Specialists Conference (SISC), 8.4, San Diego, 5–8 December 2018.

T.-E. Lee, M. Ke, K. Kato, M. Takenaka and S. Takagi, “Reduction in interface trap density of TiN/Y2O3/Si0.62Ge0.38 gate stacks with high temperature PMA,” 49th IEEE Semiconductor Interface Specialists Conference (SISC), 9.2, San Diego, 5–8 December 2018.

M. Ke, P. Cheng, K. Kato, M. Takenaka, and S. Takagi, “Characterization and understanding of slow traps in GeOx-based n-Ge MOS interfaces,” International Electron Devices Meeting (IEDM2018), 34.3, San Francisco, 1–5 December 2018.

M. Takenaka, “Efficient optical phase modulator based on Si hybrid MOS capacitor,” 8th International Symposium on Photonics and Electronics Convergence (ISPEC2018), C-6, Tokyo, 3–4 December 2018.

C. P. Ho, Z. Zhao, Q. Li, S. Takagi, and M. Takenaka, “Investigation of a germanium-on-insulator band-stop filter,” 8th International Symposium on Photonics and Electronics Convergence (ISPEC2018), P-07, Tokyo, 3–4 December 2018.

Q. Li, C. P. Ho, S. Takagi, and M. Takenaka, “Demonstration of Si racetrack resonator based on III-V/Si hybrid MOS phase shifter,” 8th International Symposium on Photonics and Electronics Convergence (ISPEC2018), P-09, Tokyo, 3–4 December 2018.

Z. Zhao, C. P. Ho, S. Takagi, and M. Takenaka, “Fabrication of high-Q ring resonator using low loss GeOI wafer,” 8th International Symposium on Photonics and Electronics Convergence (ISPEC2018), P-08, Tokyo, 3–4 December 2018.

S. Takagi, W.-K. Kim, K.-W. Jo, R. Matsumura, R. Takaguchi, T. Katoh, T.-E. Bae K. Kato, and M. Takenaka, “Ultrathin-body Ge-on-insulator MOSFET and TFET technologies,” Americas International Meeting on Electrochemistry and Solid State Science (AiMES), Symposium G03, 1042, Cancun, Mexico, 30 September - 4 October 2018 (invited).

M. Takenaka, J. Han, F. Boeuf, J.-K. Park, Q. Li, C. P. Ho, D. Lyu, S. Ohno, J. Fujikata, S. Takahashi, and S. Takagi, “III-V/Si hybrid MOS optical phase modulator for Si photonic integrated circuits,” European Conference on Optical Communication (ECOC 2018), Mo3C.3, 23–27 September 2018 (invited).

T. Fujigaki, S. Takagi, and M. Takenaka, “Low-power Ge thermo-optic phase shifter on Ge-on-Insulator platform,” European Conference on Optical Communication (ECOC 2018), Th2.10, 23–27 September 2018.

M. Takenaka, J. Han, Q. Li, C.P. Ho, D. Lyu, S. Ohno, and S. Takagi, “Si hybrid MOS optical phase shifter for switching and computing,” Photonics in Switching and Computing (PSC 2018), Th3B.1, 19–21 September 2018 (invited).

T. Sanjoh, N. Sekine, S. Takagi, M. Takenaka, “Heat dissipation property of III-V on SiC platform for photonic integrated circuits,” International Conference on Solid State Devices and Materials (SSDM), H-3-03, Tokyo, 11-13 Sept. 2018.

M. Yamaguchi, T. Gotow, M. Takenaka, and S. Takagi, “Performance enhancement of Si MOSFETs using antiferroelectric thin films as gate insulators,” International Conference on Solid State Devices and Materials (SSDM), C-4-02, Tokyo, 11-13 Sept. 2018.

K. Kato, H. Matsui, H. Tabata, M. Takenaka, and S. Takagi, “Impact of channel thickness fluctuation on performance of bilayer tunneling field effect transistors,” International Conference on Solid State Devices and Materials (SSDM), C-4-04, Tokyo, 11-13 Sept. 2018.

Y. Taguchi, S. Takagi, and M. Takenaka, “Proposal of Ge/Si hybrid MOS optical modulator operating at mid-infrared wavelengths,” International Conference on Solid State Devices and Materials (SSDM), H-6-02, Tokyo, 11-13 Sept. 2018.

K. Endo, K. Kato, and M. Takenaka, and S. Takagi, “Electrical characteristic of La2O3/Si MOSFETs with ferroelectric-type hysteresis,” International Conference on Solid State Devices and Materials (SSDM), C-7-05, Tokyo, 11-13 Sept. 2018.

T. Gotow, M. Mitsuhara, T. Hoshi, H. Sugiyama, M. Takenaka, and S. Takagi, “Improvement of ION and S.S. values of p-GaAs0.51Sb0.49/In0.53Ga0.47As hetero-junction vertical TFETs by using abrupt source impurity profile,” International Conference on Solid State Devices and Materials (SSDM), PS-1-29, Tokyo, 11-13 Sept. 2018.

K. Sumita, K. Kato, M. Takenaka, S. Takagi, “Fabrication of InAs-on-Insulator structures by Smart Cut method with hydrogen implantation at room temperature,” International Conference on Solid State Devices and Materials (SSDM), C-8-01, Tokyo, 11-13 Sept. 2018.

S. Glass, M. Liu, K. Kato, J.-M. Hartmann, S. Takagi, D. Buca, S. Mantl and Q. T. Zhao, “Mitigating edge effects in gate-normal tunneling field-effect transistors using a Ti/TiN dual-metal gate,” International Conference on Solid State Devices and Materials (SSDM), C-7-06, Tokyo, 11-13 Sept. 2018.

S. Takagi, K. Kato W.-K. Kim, K. Jo, R. Matsumura, R. Takaguchi, D.-H. Ahn, T. Gotow, and M. Takenaka, “MOS Device Technology using alternative channel materials for low power logic LSI,” 48th European Solid-State Device Conference (ESSDERC 2018), A5L-E, Dresden, Germany, 3–6 September 2018 (keynote).

M. Takenaka and S. Takagi, “Heterogeneous integration of III-V/Ge on Si for photonic integrated circuits,” Progress In Electromagnetics Research Symposium (PIERS2018), 1A11-2, Toyama, 1–4 August 2018 (invited).

M. Takenaka and S. Takagi, “Ge-on-insulator platform for mid-infrared integrated photonics,” IEEE Summer Topicals Meeting Series, TuA4.2, Waikoloa, Hawaii, US, 9–11 July 2018 (invited).

S. Takagi, K. Kato, R. Takaguchi, T.-E. Bae, D.-H. Ahn, T. Gotow, and M. Takenaka, “Tunneling MOSFET technology for ultra-low power integrated system,” Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2018), K-1, Kitakyushu, 2–4 July 2018 (plenary).

J. Han, S. Takagi, and M. Takenaka, “Semiconductor-insulator-semiconductor (SIS) structures for high-performance optical modulation,” Optoelectronics and Communications Conference (OECC2018), 4E1-2, Jeju, Korea, 2–6 July 2018 (invited).

M. Takenaka and S. Takagi, “Opportunities of III-V/Si hybrid integration for optical modulation and switching,” 9th International Symposium on the Physics of Semiconductors and Applications (ISPSA2018), MoA2-1, Jeju, Korea, 1–5 July 2018 (invited).

K-W. Jo, W-K. Kim, M. Takenaka, and S. Takagi, “Hole mobility enhancement in extremely-thin-body strained GOI and SGOI pMOSFETs by improved Ge condensation method,” VLSI Symposium, T18-3, Hawaii, USA, 19-21 June 2018. DOI: 10.1109/VLSIT.2018.8510646

S. Takagi, D.-H. Ahn, T. Gotow, and M. Takenaka, “Ultra-Low Power III-V-based Mosfets and tunneling FETs,” 233rd ECS Meeting, Symposium H02, 1457, Seattle Sheraton and Washington State Convention Center, USA, 13–17 May 2018 (invited).

M. Takenaka and S. Takagi, “Efficient phase modulation based on Si hybrid MOS capacitor for universal photonic integrated circuits,” International Conference on Nano-photonics and Nano-optoelectronics (ICNN2018), ICNN6-1, Yokohama, 25–27 April 2018 (invited).

M. Takenaka and S. Takagi, “Si hybrid MOS capacitor for optical modulation and switching,” International Conference on Nano/Micro Engineered and Molecular Systems (IEEE NEMS2018), Singapore, 22-26 April 2018 (invited).

高木 信一, “性能限界を越えるCMOS デバイス技術,” 名古屋大学シリコンフロンティア・特別研究会, ～特定領域研究『ポストスケール』から10年を超えて～，名古屋大学, 2019年3月30日.

関根 尚希, 高木 信一, 竹中 充, “InP スロット導波路を用いた有機EO ポリマー光変調器の検討,” 第66回応用物理学会春季学術講演会，11p-W331-10，東京工業大学大岡山キャンパス, 2019年3月9日–3月12日.

高口 遼太郎, 竹中 充, 高木 信一 , “Spin on Glassからの固相拡散によるGe中のn型不純物拡散挙動,” 第66回応用物理学会春季学術講演会，9p-S221-11，東京工業大学大岡山キャンパス, 2019年3月9日–3月12日.

加藤 公彦, 松井 裕章, 田畑 仁, 竹中 充, 高木 信一 , “超平坦ZnSnOチャネルによる積層型TFETサブスレショルド特性の改善,” 第66回応用物理学会春季学術講演会，9p-S221-2，東京工業大学大岡山キャンパス, 2019年3月9日–3月12日.

加藤 公彦, 松井 裕章, 田畑 仁, 竹中 充, 高木 信一 , “Zn(Sn)O/Si積層型TFET特性の温度依存性と動作機構の理解,” 第66回応用物理学会春季学術講演会，9p-S221-3，東京工業大学大岡山キャンパス, 2019年3月9日–3月12日.

大野 修平,トープラサートポン カシディット, 高木 信一, 竹中 充, “リング共振器アレイ型シリコン光回路を用いた深層学習の検証,” 第66回応用物理学会春季学術講演会，11p-W331-3，東京工業大学大岡山キャンパス, 2019年3月9日–3月12日.

満原 学, 星 拓也, 杉山 弘樹, 後藤 高寛, 竹中 充, 高木 信一 , “InP基板上引張歪GaAsSbとInGaAsの膜厚増加による結晶性劣化の比較,” 第66回応用物理学会春季学術講演会，11a-S422-10，東京工業大学大岡山キャンパス, 2019年3月9日–3月12日.

安 大煥, 尹 尚希, 加藤 公彦, 福井 太一郎, 竹中 充, 高木 信一 , “ZrO2 による EOT スケーリングを用いた Planar-type 量子井戸 InGaAs TFET の性能向上,” 第66回応用物理学会春季学術講演会，11a-S422-10，東京工業大学大岡山キャンパス, 2019年3月9日–3月12日（講演奨励賞受賞記念講演）.

宮武 悠人,　関根 尚希,トープラサートポン カシディット, 高木 信一, 竹中 充, “進化計算を用いた高効率グレーティングカプラの設計自動化,” 第66回応用物理学会春季学術講演会，11p-W331-11，東京工業大学大岡山キャンパス, 2019年3月9日–3月12日.

H. Tang, S. Takagi, and, M. Takenaka, “Numerical analysis of Waveguide coupled graphene thermal emitter,” 第66回応用物理学会春季学術講演会，10a-W331-2，東京工業大学大岡山キャンパス, 2019年3月9日–3月12日.

T.-E. Lee, M. Takenaka, and S. Takagi, “Impact of metal gate electrodes on electrical properties of Y2O3/Si0.78Ge0.22 gate stacks,” 第66回応用物理学会春季学術講演会，11p-M136-8，東京工業大学大岡山キャンパス, 2019年3月9日–3月12日.

Q. Li, C.-H. Ho, S. Takagi, and, M. Takenaka, “Investigation of Franz-Keldysh effect and carrier depletion effect in III-V/Si hybrid MOS optical modulator,” 第66回応用物理学会春季学術講演会，10a-W331-7，東京工業大学大岡山キャンパス, 2019年3月9日–3月12日.

D. Lyu, S. Takagi, and, M. Takenaka, “Investigation of impact of InGaAsP quantum well on the modulation efficiency of III-V/Si hybrid MOS optical modulator,” 第66回応用物理学会春季学術講演会，10a-W331-8，東京工業大学大岡山キャンパス, 2019年3月9日–3月12日.

高木信一, “極低消費電力集積回路のためのトンネルMOSFETテクノロジーの構築”, CREST・さきがけ複合領域　中間・終了報告会「素材・デバイス・システム融合による革新的ナノエレクトロニクスの創成」, 東京大学　駒場コンベンションホール, 2019年01月30日. 

竹中 充, 高木 信一, “異種材料集積シリコン光集積回路および高効率光変調器への応用”, 第39回レーザー学会年次大会, 東海大学高輪キャンパス，2019年1月12–14日（招待講演）.

高木信一, “MOSトランジスタにおけるキャリアのフォノン散乱,” 第212回　シリコンテクノロジー分科会研究集会，応用物理学会応物会館会議室, 2018年11月26日（招待講演）.

加藤公彦, 松井裕章, 田畑仁, 竹中充, 高木信一, “酸化物半導体/IV族半導体を用いた超低消費電力トンネルトランジスタの提案と素子設計,” 電子情報通信学会シリコン材料・デバイス(SDM)研究会，機械振興会館, 2018年11月8日–11月9日（招待講演）.

藤垣 匠, 高木 信一, 竹中 充, “Ge-on-Insulatorプラットフォーム上熱光学位相シフタの実証,” 第79回応用物理学会秋季学術講演会，18a-212A-1，名古屋国際会議場，名古屋, 2018年9月18日–9月21日.

加藤 公彦, 松井 裕章, 田畑 仁, 竹中 充, 高木 信一, “酸化物半導体/IV族半導体を用いた超低消費電力トンネルトランジスタ,” 第79回応用物理学会秋季学術講演会，19p-233-8，名古屋国際会議場，名古屋, 2018年9月18日–9月21日.

尹 尚希, 安 大煥, 竹中 充, 高木 信一, “InGaAs nチャネルMOSFETにおける界面準位発生と基板ホール電流の関係,” 第79回応用物理学会秋季学術講演会，20a-PA5-10，名古屋国際会議場，名古屋, 2018年9月18日–9月21日.

加藤 公彦, 松井 裕章, 田畑 仁, 竹中 充, 高木 信一, “積層型トンネルFETの電気特性に与えるチャネル厚さ揺らぎの影響,” 第79回応用物理学会秋季学術講演会，21a-CE-3，名古屋国際会議場，名古屋, 2018年9月18日–9月21日.

安 大煥, 尹 尚希, 加藤 公彦, 福井 太一郎, 竹中 充, 高木 信一, “ZrO2ゲートスタックによるPlanar-type InGaAs TFETのSub-60mV/dec 特性の実現,” 第79回応用物理学会秋季学術講演会，21a-CE-4，名古屋国際会議場，名古屋, 2018年9月18日–9月21日.

K.-W. Jo, W.-K. Kim, M. Takenaka, and S. Takagi, “Impact of SiGe layer thickness in starting substrates on properties of ultrathin body Ge-on-insulator pMOSFETs fabricated by Ge condensation,” 第79回応用物理学会秋季学術講演会，20a-CE-11，名古屋国際会議場，名古屋, 2018年9月18日–9月21日.

Z. Zhao, C. Ho, S. Takagi, and M. Takenaka, “Fabrication of High-Q Ring Resonator using n-type GeOI wafer,” 第79回応用物理学会秋季学術講演会，19p-PA3-5，名古屋国際会議場，名古屋, 2018年9月18日–9月21日.

Q. Li, C.-P. Ho, S. Takagi, and M. Takenaka, “Fabrication of Si racetrack optical modulator with III-V/Si hybrid MOS phase shifter,” 第79回応用物理学会秋季学術講演会，18p-212A-7，名古屋国際会議場，名古屋, 2018年9月18日–9月21日.

T.-E. Lee, K. Kato, M. Ke, and M. Takenaka, “Improvement of SiGe MOS Interfaces Properties by TiN/Y2O3 Gate Stacks,” 第79回応用物理学会秋季学術講演会，19p-234B-4，名古屋国際会議場，名古屋, 2018年9月18日–9月21日.

竹中 充, 高木 信一, “SiハイブリッドMOS位相シフタを用いた光変調器の展望”, 電子情報通信学会レーザ・量子エレクトロニクス研究会 (LQE), 北海道大学，2018年7月12–13日（招待講演）.