M. Yokoyama, H. Yokoyama, M. Takenaka, and S. Takagi
Impact of interfacial InAs layers on Al2O3/GaSb metal-oxide-semiconductor interface properties
Appl. Phys. Lett., vol. 106, 122902, 2015. DOI: 10.1063/1.4914453

M. Yokoyama, H. Yokoyama, M. Takenaka, and S. Takagi
Ultrathin body GaSb-on-insulator p-channel met-al-oxide-semiconductor field-effect transistors on Si fabri-cated by direct wafer bonding
Appl. Phys. Lett., vol. 106, 073503, 2015. DOI: 10.1063/1.4906922

X. Yu, R. Zhang, J. Kang, T. Maeda, T. Itatani, T. Osada, M. Hata, M. Takenaka, and S. Takagi
Ultrathin body germanium-on-insulator (GeOI) pseudo-MOSFETs fabricated by transfer of epitaxial Ge films on III-V substrates," ECS Solid State Letters, vol. 4, no. 2, pp. P15-P18, 2015. DOI: 10.1149/2.0031502ssl

M.-S. Kim, Y. Ki. Wakabayashi, M. Yokoyama, R. Nakane, M. Takenaka, and Shinichi Takagi
Ge/Si heterojunction tunnel field-effect transistors and their post metallization annealing effect
IEEE Trans. Electron Devices, vol. 62, no. 1, pp. 9 – 15, 2015. DOI: 10.1109/TED.2014.2371038

K. Nishi, M. Yokoyama, H. Yokoyama, T. Oshi, H. Sugiyama, M. Takenaka, and S. Takagi
Operation of the GaSb p-channel metal-oxide-semiconductor field-effect transistors fabricated on (111)A surfaces
Appl. Phys. Lett., vol. 105, 233503, 2014. DOI: 10.1063/1.4903837

R. Zhang, X. Yu, M. Takenaka, and Shinichi Takagi
Impact of channel orientation on electrical properties of Ge p- and n-MOSFETs with 1-nm EOT Al2O3/GeOx/Ge gate stacks fabricated by plasma post oxidation
IEEE Trans. Electron Devices, vol. 61, no. 11, pp. 3668 – 3675, 2014. DOI: 10.1109/TED.2014.2359678

K. Alam, S. Takagi, and M. Takenaka
A Ge ultrathin-body n-channel tunnel FET: Effects of surface orientation
IEEE Trans. Electron Devices, vol. 61, no. 11, pp. 3594 – 3600, 2014. DOI: 10.1109/TED.2014.2353513

W. Kim, K. Kuroda, M. Takenaka, and S. Takagi
Sb-doped S/D ultra-thin body Ge-on insulator nMOSFET fabricated by improved Ge condensation process
IEEE Trans. Electron Devices, vol. 61, no. 10, pp. 3379 – 3385, 2014. DOI: 10.1109/TED.2014.2350457

Y. Cheng, Y. Ikku, M. Takenaka, and S. Takagi
InGaAs MSM photodetector monolithically integrated with InP photonic-wire waveguide on III-V CMOS photonics platform
IEICE Electronics Express, vol. 11, no. 16, pp. 20140609, 2014. DOI: 10.1587/elex.11.20140609

S.H. Kim., Y. Ikku, M. Yokoyama, R. Nakane, J. Li, Y.-C. Kao, M. Takenaka, and S. Takagi
Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors
Appl. Phys. Lett., vol. 105, 043504, 2014. DOI: 10.1063/1.4891493

S.H. Kim., M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors
Appl. Phys. Lett., vol. 104, 263507, 2014. DOI: 10.1063/1.4885765

M. Yokoyama, Y. Asakura, H. Yokoyama, M. Takenaka, and S. Takagi
Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process
Appl. Phys. Lett., vol. 104, 262901, 2014. DOI: 10.1063/1.4884950

R. Zhang, X. Yu, M. Takenaka, and Shinichi Takagi
Physical origins of high normal field mobility degradation in Ge p- and n-MOSFETs with GeOx/Ge MOS interfaces fabricated by plasma post oxidation
IEEE Trans. Electron Devices, vol. 61, no. 7, pp. 2316 – 2323, 2014. DOI: 10.1109/TED.2014.2325604

S.-H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and Shinichi Takagi
High performance tri-gate extremely thin-body InAs-on-insulator MOSFETs with high short channel effect immunity and Vth tunability,” IEEE Trans. Electron Devices, vol. 61, no. 5, pp. 1354 – 1360, 2014. DOI: 10.1109/TED.2014.2312546

K. Alam, S. Takagi, and M. Takenaka
Strain-modulated L-valley ballistic-transport in (111) GaAs ultrathin-body nMOSFETs
IEEE Trans. Electron Devices, vol. 61, no. 5, pp. 1335 – 1340, 2014. DOI: 10.1109/TED.2014.2311840

Y. Kim, M. Takenaka, T. Osada, M. Hata, and S. Takagi,
Fabrication and evaluation of propagation loss of Si/SiGe/Si photonic-wire waveguides for Si based optical modulator
Thin Solid Films, Vol. 557, pp. 342-345, 2014. DOI: 10.1016/j.tsf.2013.10.063

N. Yoshida, E. Waki, M. Arai, K. Yamasaki, M. Takenaka, and Shinichi Takagi,
Extraction of Interface State Density at SiO2/SiC Interfaces based on Impedance Measurements with Different Temperatures", Thin Solid Films, Vol. 557, pp. 237-240, 2014. DOI: /10.1016/j.tsf.2013.10.062

M.-S. Kim, Y. Kim, M. Yokoyama, R. Nakane, S.-H. Kim, M. Takenaka, and S. Takagi,
Tunnel field-effect transistors with germanium/strained-silicon hetero-junctions for low power applications
Thin Solid Films, Vol. 557, pp. 298-301, 2014. DOI: 10.1016/j.tsf.2013.10.067

Y. Kim, M. Takenaka, T. Osada, M. Hata, and S. Takagi
Strain-induced enhancement of plasma dispersion effect and free-carrier absorption in SiGe optical modulators
Scientific Reports, vol. 4, 4683, 2014. DOI: 10.1038/srep04683

S. Takagi, S.-H. Kim, M. Yokoyama, K. Nishi, R. Zhang, and M. Takenaka
Material challenges and opportunities in Ge/III-V channel MOSFETs," ECS Trans., vol. 64, no. 11, pp. 99-110, 2014 (invited). DOI: 10.1149/06411.0099ecst

S. H. Kim, M. Yokoyama, Y. Ikku, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation
Appl. Phys. Lett., vol. 104, 113509, 2014. DOI: 10.1063/1.4869221

Y. Kim, J. Han, M. Takenaka, and S. Takagi
Low temperature Al2O3 surface passivation for carrier-injection SiGe optical modulator
Optics Express Letters, vol. 22. no. 7, pp. 7458-7464, 2014. DOI: 10.1364/OE.22.007458

W. Cai, M. Takenaka, and S. Takagi
Evaluation of interface state density of strained-Si metal-oxide-semiconductor interfaces by conductance method
J. Appl. Phys., vol. 115, 094509, 2014. DOI: 10.1063/1.4867935

M. Takenaka and S. Takagi, “III-V/Ge device engineering for CMOS photonics”, Materials Science Forum, Vol. 783-786, pp. 2028-2033, May, 2014. DOI: 10.4028/www.scientific.net/MSF.783-786.2028

Y. Kim, J. Fujikata, S. Takahashi, M. Takenaka, and S. Takagi
SiGe-based carrier-injection Mach-Zehnder modulator with enhanced plasma dispersion effect in strained SiGe
Optical Fiber Communication Conference (OFC2015), Tu2A.7, Los Angelas, 24 March 2015.

M. Kim, Y. Wakabayashi, R. Nakane, M. Yokoyama, M. Takenaka and S. Takagi, “Effects of strain, interface states and back bias on electrical characteristics of Ge-source UTB strained-SOI tunnel FETs”, 8th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar ”Atomically Controlled Processing for Ultralarge Scale Integration”, pp. 9-10, Jan. 29-30, 2015, Tohoku University, Sendai, Japan 

X. Yu, J. Kang, R. Zhang, M. Takenaka, and S. Takagi
Mobility improvement of ultrathin-body germanium-on-insulator (GeOI) MOSFETs on flipped smart-cut GeOI substrates
Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), D4, Bologna, Italy, 28 January 2015. DOI: 10.1109/ULIS.2015.7063798

M. Kim, Y. Wakabayashi, R. Nakane, M. Yokoyama, M. Takenaka and S. Takagi
High Ion/Ioff Ge-source ultrathin body strained-SOI tunnel FETs – Impact of channel strain, MOS interfaces and back gate on the electrical properties
International Electron Devices Meeting (IEDM’14), 13.2, San Francisco, 16 December 2014. DOI: 10.1109/IEDM.2014.7047043

J.-H. Han, M. Takenaka, and S. Takagi
Comparison of Al2O3/Si1-xGex MOS interfaces grown on p-Si (100) and p-Si (110) with plasma post-nitridation
IEEE Semiconductor Interface Specialists conference (SISC2014), 13.4, San Diego, USA, 13 December 2014.

C.-Y. Chang, M. Takenaka, and S. Takagi
Improvement of electrical properties of InGaAs MOS interfaces by inserting La oxide interfacial layers into InGaAs high-k gate stacks
IEEE Semiconductor Interface Specialists conference (SISC2014), 4.5, San Diego, USA, 11 December 2014.

Y. Cheng, Y. Ikku, M. Takenaka, and S. Takagi
InGaAs MSM photodetector with InAlAs and InP cap layers on III-V CMOS photonics platform for low dark current operation
4th International Symposium on Photonics and Electronics Convergence (ISPEC2014), P20, Tokyo, 18 November 2014.

Y. Ikku, M. Yokoyama, M. Takenaka, and S. Takagi
Low-crosstalk carrier-injection Mach-Zehnder interferometer optical switches with 50-μm-long phase shifters on III-V CMOS photonics platform
4th International Symposium on Photonics and Electronics Convergence (ISPEC2014), P19, Tokyo, 18 November 2014.

Y. Kim, J. Fujikata, S. Takahashi, M. Takenaka, and S. Takagi
Low injection-current variable optical attenuator by using strained SiGe with optimized lateral PIN junction
4th International Symposium on Photonics and Electronics Convergence (ISPEC2014), P54, Tokyo, 18 November 2014.

T. Kayoda, M. Takenaka, and S. Takagi
Examination of modulation efficiency of graphene optical modulator based on semiconductor-metal transition
4th International Symposium on Photonics and Electronics Convergence (ISPEC2014), P33, Tokyo, 18 November 2014.

J. Kang, X. Yu, M. Takenaka, and S. Takagi
Ge-on-Insulator Substrate Fabrication for Ge CMOS Photonics Platform
4th International Symposium on Photonics and Electronics Convergence (ISPEC2014), P39, Tokyo, 18 November 2014.

S. Takagi and M. Takenaka
Material challenges and opportunities in Ge/III-V channel MOSFETS
226th ECS Meeting, Symposium P3, 1645, Cancun, Mexico, 7 October 2014 (invited).

S. Takagi and M. Takenaka, “III-V/Ge Channel MOS Device Technologies in Nano CMOS era”, invited talk, 27th International Microprocesses and Nanotechnology Conference (MNC), November 4-7, 2014, Hilton Fukuoka Sea Hawk, Fukuoka, Japan

Y. Kim, J. Fujikata, S. Takahashi, M. Takenaka, and S. Takagi
Record-low injection-current strained SiGe variable optical attenuator with optimized lateral PIN junction
European Conference on Optical Communication (ECOC’14), Cannes, P.2.6, 24 September 2014. DOI: 10.1109/ECOC.2014.6963927

S. Takagi and M. Takenaka
III-V CMOS device technologies on Si platform
E-MRS Fall Meeting, Symposium J, 71, Warsaw, Poland, 16 September 2014 (invited).

K. Tanaka, R. Zhang, M. Takenaka, and S. Takagi
Quantitative evaluation of slow traps near Ge MOS interfaces by using time response of MOS capacitance
International Conference on Solid State Devices and Materials (SSDM2014), F-2-2, Tukuba, 9 September 2014.

W.K. Kim, M. Takenka, and S. Takagi
Properties of ultrathin body condensation GOI films thinned by additional thermal oxidation
International Conference on Solid State Devices and Materials (SSDM2014), PS-1-15, Tukuba, 10 September 2014 (Late News).

W.-L. Cai, M. Takenka, and S. Takagi
Improvement of S-factor Method for Evaluation of MOS Interface State Density
International Conference on Solid State Devices and Materials (SSDM2014), J-2-2, Tukuba, 9 September 2014.

Y. Ikku, and M. Takenaka, and S. Takagi
Low-resistance lateral junction formation for laser diodes on III-V CMOS photonics platform
24th IEEE International Semiconductor Laser Conference (ISLC 2014), MB3, Palma de Mallorca, Spain, 8 September 2014. 10.1109/ISLC.2014.150

S. Takagi and M. Takenaka, “Experimental aspects of carrier transport properties in III-V and III-V-OI MOSFETs”, invited talk, SISPAD 2014 (International Conference on Simulation of Semiconductor Processes and Devices), "Carrier Transport in Nano-Transistors: Theories and Experiments" Workshop, 8 September, 2014, Yokohama melpark, Japan

Y. Kim, M. Takenaka and S. Takagi
Simulation of carrier-depletion strained SiGe optical modulators with vertical p-n junction
International Conference on Group IV Photonics (GFP2014), ThP5, Paris, France, 28 August 2014. DOI: 10.1109/Group4.2014.6961993

S. Takagi and M. Takenaka
Challenges & advances of MOSFETs using high mobility material channels
International Conference on the Physics of Semiconductors (ICPS2014), Austin, USA, 12 August 2014 (invited).

M. Takenaka, Y. Ikku, and S. Takagi
III-V CMOS photonics platform for low-power and low-crosstalk photonic-wire switches and modulators
Advanced Photonics for Communications, JT5C.4, San Diego, USA, 15 July 2014 (invited).

M. Yokoyama, H. Yokoyama, M. Takenaka and S. Takagi
III-V single structure CMOS by using ultrathin body InAs/GaSb-OI channels on Si
VLSI Symposium, 4.2, Hawaii, USA, 10 June 2014. DOI: 10.1109/VLSIT.2014.6894350

S. H. Kim, Y. Ikku, M. Yokoyama, R. Nakane, J. Li, Y.-C. Kao, M. Takenaka and S. Takagi
High performance InGaAs-On-Insulator MOSFETs on Si by novel direct wafer bonding technology applicable to large wafer size Si
VLSI Symposium, 4.4, Hawaii, USA, 10 June 2014. DOI: 10.1109/VLSIT.2014.6894352

S. Takagi and M. Takenaka
III-V/Ge CMOS device technologies for future logic LSIs
International SiGe Technology and Device Meeting (ISTDM2014), 1.1, Singapore, 2 June 2014 (plenary). DOI: 10.1109/ISTDM.2014.6874696

Y. Ikku, M. Takenaka, and S. Takagi
Surface orientation depdendence of electro-optic effects in InGaAsP for lateral pin-junction InGaAsP photonic-wire modulators
Indium Phosphide and Related Materials (IPRM’14), P27, Montpellier, 11-15 May 2014. DOI: 10.1109/ICIPRM.2014.6880549

Y. Cheng, Y. Ikku, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
Waveguide InGaAs photodetector with Schottky barrier enhancement layer on III-V CMOS photonics platform
Indium Phosphide and Related Materials (IPRM’14), We-B1-2, Montpellier, 11-15 May 2014. DOI: 10.1109/ICIPRM.2014.6880578

M. Kuramochi, M. Takenaka, Y. Ikku, and S. Takagi
Multi-bandgap III-V on insulator wafer fabricated by quantum well intermixing for III-V CMOS photonics platform
Indium Phosphide and Related Materials (IPRM’14), Mo-B1-3, Montpellier, 11-15 May 2014. DOI: 10.1109/ICIPRM.2014.6880518

K. Nishi, M. Yokoyama, H. Yokoyama, M. Takenaka, and S. Takagi
Thin body GaSb-OI p-MOSFETs on Si wafers fabricated by direct wafer bonding
Indium Phosphide and Related Materials (IPRM’14), Th-D2-6, Montpellier, 11-15 May 2014. DOI: 10.1109/ICIPRM.2014.6880566

M. Kim, Y. Wakabayashi, R. Nakane, M. Yokoyama, M. Takenaka, and S. Takagi
Effect of in-situ boron doping in germanium source regions on performance of germanium/strained-silicon-on-insulator tunnel field-effect transistors
MRS Spring Meeting, BB2.01, San Francisco, 22 April 2014.

X. Yu, R. Zhang, J. Kang, T. Osada, M. Hata, M. Takenaka, and S. Takagi
Ultrathin body Germanium-on-insulator (GeOI) MOSFETs fabricated by transfer of epitaxial Ge films on III-V substrates
International Symposium on VLSI technology, System and Applications (VLSI-TSA2014), TR22, Hsinchu, Taiwan, 28 April 2014. DOI: 10.1109/VLSI-TSA.2014.6839657

W.-L. Cai, M. Takenaka and S. Takagi
Effects of biaxially-tensile strain to properties of Si/SiO2 interface states generated by electrical stress
IEEE International Reliability Physics Symposium (IRPS’14), XT-5, Waikoloa, Hawaii, USA, 1-5 April 2014. DOI: 10.1109/IRPS.2014.6861183

韓 在勲、竹中 充、高木 信一, "プラズマ後窒化(100)面及び(110)面SiGe MOS界面の比較", 2015年春季第62回応用物理学会学術講演会，14a-A24-4，東海大学湘南キャンパス，2015年3月14日.

Weili Cai, Mitsuru Takenaka, Shinichi Takagi, "Effectiveness of surface potential fluctuation for representing inversion-layer mobility limited by Coulomb scattering in MOSFETs ", 2015年春季第62回応用物理学会学術講演会，13a-A27-4，東海大学湘南キャンパス，2015年3月13日.

金 相賢、一宮 佑希、横山 正史、中根 了昌、Li Jian、Kao Yung-Chung、竹中 充、高木 信一, "大口径化可能な貼り合わせ法によるSi上高性能InGaAs-OI MOSFETの作製",2015年春季第62回応用物理学会学術講演会，13a-A23-8，東海大学湘南キャンパス，2015年3月13日（第6回シリコンテクノロジー分科会論文賞受賞記念講演）.

横山春喜, 星拓也, 杉山弘樹, 西康一, 竹中充, 高木信一, “GaSb基板の熱処理条件最適化”, 2015年春季第62回応用物理学会学術講演会，13p-D4-10，東海大学湘南キャンパス，2015年3月13日.

Jian Kang, Xiao Yu, Mitsuru Takenaka, Shinichi Takagi, "Study of Thermal Annealing Effect on Smartcut Ge-on-Insulator Substrate", 2015年春季第62回応用物理学会学術講演会，12p-A16-6，東海大学湘南キャンパス，2015年3月12日.

ChihYu Chang, Osamu Ichikawa, Takenori Osada, Hisashi Yamada, Mitsuru Takenaka, Shinichi Takagi, "Improvement of Electrical Properties of InGaAs MOS Interfaces by Inserting La Oxide Interfacial Layers into InGaAs Gate Stacks", 2015年春季第62回応用物理学会学術講演会，12a-P12-6，東海大学湘南キャンパス，2015年3月12日.

高島 成也、一宮 佑希、竹中 充、高木 信一, "III-V-OI基板上における量子井戸インターミキシングの検討", 2015年春季第62回応用物理学会学術講演会，12p-A17-15，東海大学湘南キャンパス，2015年3月12日.

武内 和治、金 栄現、竹中 充、高木 信一, "歪SiGeインターリーブPN接合型光変調器の検討", 2015年春季第62回応用物理学会学術講演会，12a-A16-9，東海大学湘南キャンパス，2015年3月12日.

Minsoo Kim, Yuki K. Wakabayashi, Ryosho Nakane, Masafumi Yokoyama, Mitsuru Takenaka, Shinichi Takagi, "Effects of strain, interface states and back bias on electrical characteristics of Ge-source UTB strained-SOI tunnel FETs", 2015年春季第62回応用物理学会学術講演会，11a-A23-9，東海大学湘南キャンパス，2015年3月11日.

Xiao Yu, Jian Kang, Rui Zhang, Mitsuru Takenaka, Shinichi Takagi, "Mobility improvement of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs on flipped Smart-Cut GeOI substrates", 2015年春季第62回応用物理学会学術講演会，11a-A23-2，東海大学湘南キャンパス，2015年3月11日.

ジ サンミン、市川 磨、長田 剛規、山田 永、竹中 充、高木 信一, "高In組成InGaAs量子井戸層の挿入によるプレーナ型InGaAsトンネルFETの性能向上の実証", 2015年春季第62回応用物理学会学術講演会，11a-A23-10，東海大学湘南キャンパス，2015年3月11日.

植田 大貴、金 閔洙、竹中 充、高木 信一, "ひずみSOIトンネルFETの作製と電気的特性", 2015年春季第62回応用物理学会学術講演会，11a-A23-8，東海大学湘南キャンパス，2015年3月11日.

西 康一、横山 正史、横山 春喜、星 拓也、杉山 弘樹、竹中 充、高木 信一, "Si上フロントゲートInAs/GaSb-OI p-MOSFETの移動度向上", 2015年春季第62回応用物理学会学術講演会, 11a-A23-5，東海大学湘南キャンパス，2015年3月11日.

高木 信一, 野口宗隆, 竹中　充, "Zn拡散ソースを用いたプレーナ型InGaAs トンネルFET", 電子情報通信学会総合大会, CI-4-3, 立命館大学　びわこ・くさつキャンパス，2015年3月10日.

金閔洙, 若林勇希, 中根了昌, 横山正史, 竹中充, 高木信一, “ゲルマニウムソース薄膜ひずみSOIトンネルFETの実現とその電気特性に与えるひずみ、MOS界面、バックバイアスの効果”, 電子情報通信学会SDM研究会・応用物理学会シリコンテクノロジー分科会共催研究集会「2014 IEDM特集」,機械振興会館 , 2015年 1月27日.

一宮 佑希, 竹中 充, 高木 信一,  "III-V-OI 基板の耐熱性向上技術および低抵抗横型PIN 接合形成技術", 電子情報通信学会レーザ・量子エレクトロニクス研究会 (LQE), 8, 機会振興会館，2014年12月19日.

辻村理俊, 小野修一, 北井秀憲, 塩見弘, 佐藤圭悟, 福田憲司, 坂本邦博, 新井学, 山﨑王義, 高木信一, 奥村元, “ゲート酸化膜/SiC界面の正確なHall特性評価に必要となるFET形状の調査”, 応用物理学会先進パワー半導体分科会第１回講演会, 名古屋,  2014年11月19日.

韓在勲，竹中充，高木信一, "プラズマ後窒化HfO2/Al2O3/SiGe0.32 MOS界面の電極依存性", 2014年秋季第75回応用物理学会学術講演会，19p-A17-7，北海道大学札幌キャンパス，2014年9月19日.

蔡偉立，竹中充，高木信一, "Improvement of S-factor method for evaluation of MOS interface state density", 2014年秋季第75回応用物理学会学術講演会，19a-A17-12，北海道大学札幌キャンパス，2014年9月19日.

佐々木和哉，竹中充，高木信一, "グラフェンフォトディテクタの高性能化に向けた金属/グラフェン界面におけるフェルミ準位変化の評価", 2014年秋季第75回応用物理学会学術講演会，18p-A18-15，北海道大学札幌キャンパス，2014年9月18日.

亢健，玉虓，竹中充，高木信一, "Ge-on-Insulator fabrication by smartcut technology for Ge CMOS photonics platform", 2014年秋季第75回応用物理学会学術講演会，18p-A18-14，北海道大学札幌キャンパス，2014年9月18日.

金佑彊，高木信一，竹中充, "Effects of thinning condensation UTB GOI films by additional thermal oxidation on GOI Characteristics", 2014年秋季第75回応用物理学会学術講演会，18p-A16-11，北海道大学札幌キャンパス，2014年9月18日.

一宮佑希，横山正史，竹中充，高木信一, "小型低クロストークInGaAsP細線導波路光スイッチの作製", 2014年秋季第75回応用物理学会学術講演会，18a-C6-4，北海道大学札幌キャンパス，2014年9月18日.

嘉陽田達矢，竹中充，高木信一, "半導体-金属遷移を利用したグラフェン光変調器の変調効率の検討", 2014年秋季第75回応用物理学会学術講演会，17p-PA3-5，北海道大学札幌キャンパス，2014年9月17日.

Y. Cheng，一宮佑希，竹中充，高木信一, "Dark current reduction of waveguide InGaAs MSM photodetector on III-V CMOS photonics platform by InAlAs cap layer", 2014年秋季第75回応用物理学会学術講演会，17p-C6-4，北海道大学札幌キャンパス，2014年9月17日.

西康一，横山正史，横山春喜，星拓也，杉山弘樹，竹中充，高木信一, "基板貼り合わせ法により作製したSi上フロントゲートGaSb-OI p-MOSFETの動作実証", 2014年秋季第75回応用物理学会学術講演会，17a-PA3-4，北海道大学札幌キャンパス，2014年9月17日.

金ミンス，若林勇希，中根了昌，竹中充，高木信一, "Ge/Si hetero-junction TFETs with in-situ boron-doped Ge-source", 2014年秋季第75回応用物理学会学術講演会，17a-PA3-2，北海道大学札幌キャンパス，2014年9月17日.

一宮佑希, 横山正史, 竹中充, 高木信一, “III-V CMOSフォトニクスを用いた小型低クロストーク光スイッチ”, 電子情報通信学会レーザ・量子エレクトロニクス研究会 (LQE), 「材料デバイスサマーミーティング」 アクティブデバイスと集積化技術，機械振興会館, 2014年6月20日. 

高木信一, “MOSトランジスタの移動度と界面”,日本学術振興会産学協力研究委員会半導体界面制御技術第154委員会第91回研究会, キャンパスイノベーションセンター (CIC) 東京, p. 15-22, 2014年5月8日.