conference presentations

Peer-Reviewed Conference Proceedings (*Platform Speaker; **Poster; Student or post-doc advisees are underlined)

  1. *N. Alcheikh, M. M. Hussain, “Stretchability of archimedean-spiral interconnects design”, IEEE NEMS 2018, Singapore.
  2. **G. A. Torres Sevilla, M. D. Cordero, J. M. Nassar, A. T. Kutbee, M. M. Hussain, “Fully Packaged Compliant CMOS Electronic Systems for IoT and IoE Applications”, IEEE Electron Devices Technology and Manufacturing Conference (EDTM) 2017, Toyama, Japan, 28 Feb – 02 Mar 2017.
  3. *J. M. Nassar, G. A. Torres Sevilla, S. J. Velling, M. D. Cordero, M. M. Hussain, “A CMOS-compatible Large-Scale Monolithic Integration of Heterogeneous Multi-Sensors on Flexible Silicon for IoT Applications”, IEEE Electron Devices Meeting (IEDM) 2016, San Francisco, CA, USA 05 – 07 Dec 2016.
  4. **J. M. Nassar, M. D. Cordero, M. M. Hussain, “Affordable Dual-Sensing Proximity Sensor for Touchless Interactive Systems”, 74th Device Research Conference (DRC 2016), Delaware, DE, USA 19 – 22 Jun 2016. [DOI: 10.1109/DRC.2016.7548448]
  5. **R. R. Bahabry, A. Gumus, A. T. Kutbee, N. Wehbe, S. M. Ahmed, M. T. Ghoneim, K.–T. Lee, J. A. Rogers, M. M. Hussain, “Current Enhancement in Crystalline Silicon Photovoltaic by Low-Cost Nickel Silicide Back Contact”, IEEE 43rd Photovoltaic Specialists Conference (PVSC 2016), Oregon, Portland, OR, USA 5 – 10 June, 2016. [DOI: 10.1109/PVSC.2016.7749668]
  6. *M. M. Hussain, A. M. Hussain, A. N. Hanna, “CMOS Technology – A Critical Enabler For Free Form Electronics Based Killer Applications”, SPIE DSS 2016, Baltimore, MD, USA 18 – 22 April 2016. Proc. SPIE 9836, Micro- and Nanotechnology Sensors, Systems, and Applications VIII, 983617 (May 17, 2016); doi:10.1117/12.2222972 [Invited]
  7. *F. A. Ghaffar, A. M. Hussain, M. M. Hussain, A. Shamim, “A Strecthable and Flexible Polymer Based Monopole Antenna for Wearable Applications”, 10th European Conference on Antennas and Propagation (EuCAP 2016) Davos, Switzerland 10 – 15 April, 2016
  8. *M. M. Hussain, J. P. Rojas, G. A. Torres Sevilla, A. M. Hussain, M. T. Ghoneim, A. N. Hanna, A. T. Kutbee, J. M. Nassar, M. Cruz, “Free Form CMOS Electronics: Physically Flexible and Stretchable”, 61st IEEE Electron Devices Meeting (IEDM 2015), Washington DC, USA, 7 – 9 December, 2015 [Invited] (pp. 19.4.1–19.4.4)
  9. *A. T. Kutbee, M. T. Ghoneim, M. M. Hussain, “Flexible Lithium-Ion Planer Thin-Film Battery”, 15th International Conference on Nanotechnology (IEEE NANO 2015), Rome, Italy, 27-30 July, 2015 (pp. 1426–1429)
  10. *M. T. Ghoneim, N. Alfaraj, G. A. Torres Sevilla, M. M. Hussain, “Ultra-High Density Out-of-plane Strain Sensor based on Nano-scale Non-Planar 3D FinFET”, 15th International Conference on Nanotechnology (IEEE NANO 2015), Rome, Italy, 27-30 July, 2015 (pp. 1422–1425)
  11. **J. P. Rojas, W. M. Alqarni, J. E. Mink, K. K. Kalantan, M. M. Hussain, “Nano-watt Power From Micro-Scale Microbial Fuel Cell Using Black Tea Waste”, 15th International Conference on Nanotechnology (IEEE NANO 2015), Rome, Italy, 27-30 July, 2015 (pp. 955–958)
  12. *A. N. Hanna, A. M. Hussain, M. M. Hussain, “Wavy Channel Architecture Thin Film Transistor (TFT) Using Amorphous Zinc Oxide For High-Performance And Low-Power Semiconductor Circuits”, 73rd Annual Device Research Conference, Ohio State University, Ohio, USA, June 21-24, 2015 (pp. 201–202)
  13. **M. T. Ghoneim, N. Alfaraj, G. A. Torres Sevilla, H. M. Fahad, M. M. Hussain, “Out-of-plane Strain Effect on Silicon-Based Flexible FinFETs”, 73rd Annual Device Research Conference, Ohio State University, Ohio, USA, June 21-24, 2015 (pp. 95–96)
  14. *A. N. Hanna, A. M. Hussain, M. T. Ghoneim, J. P. Rojas, G. A. Torres Sevilla, M. M. Hussain, “Wavy Channel TFT Architecture for High Performance Oxide Based Displays”, International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, Salt Lake City, Utah, USA, June 15-18, 2015 [Invited] [Proceedings archieved as ECS Trans. 2015 volume 67, issue 1, pp. 191–198]
  15. *J. P. Rojas, A. M. Hussain, A. Arevalo, I. G. Foulds, G. A. Torres Sevilla, J. M. Nassar, M. M. Hussain, “Transformational Electronics Are Now Reconfiguring,” SPIE-DSS 2015, Baltimore, Apr 20-24, 2015 [Invited] [Proc. SPIE 9467, Micro- and Nanotechnology Sensors, Systems, and Applications VII, 946709 (May 22, 2015); doi:10.1117/12.2176790]
  16. **S. M Ahmed, A. M Hussain, J. P Rojas, M. M. Hussain, “Solid State MEMS Devices on Flexible and Semi-transparent Silicon (100) Platform”, The 27th (IEEE/ASME) International Conference on Micro Electro Mechanical Systems (MEMS 2014), San Francisco, California, USA (pp. 548–551)
  17. *H. Fahad, G. Torres Sevilla, M. Ghoneim M. M. Hussain, “High Performance Flexible CMOS SOI FinFETs”, 72nd Device Research Conference (DRC), Santa Barbara, California, USA (pp. 231–232)
  18. *M. T. Ghoneim, A. N. Hanna, M. M. Hussain, “Ultra-Thin Flexible and Semi-Transparent Bulk Monocrystalline Silicon (100) Fabric based FeRAM”, IEEE NANO 2014 (14th International Conference on Nanotechnology), Toronto, ON, Canada (pp. 448–451)
  19. *J. M. Nassar, A. M. Hussain, J. P. Rojas, M. M. Hussain, “Transfer-less Flexible and Transparent High-k/Metal Gate Germanium Devices on Bulk Silicon (100)”, IEEE NANO 2014 (14th International Conference on Nanotechnology), Toronto, ON, Canada (pp. 176–179)
  20. *M. Nour, M. Ghoneim, R. Droopad, M. M. Hussain, “CMOS Compatible Route for GaAs based Large Scale Flexible and Transparent Electronics”, IEEE NANO 2014 (14th International Conference on Nanotechnology), Toronto, ON, Canada (pp. 835–838)
  21. *A. N. Hanna, G. A. Torres Sevilla, M. T. Ghoneim, M. M. Hussain, “Wavy channel thin film transistor for area efficient high performance and low power applications”, (IEEE) 2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Grenoble, France (pp. 1–4)
  22. *G. A. Torres Sevilla, J. P. Rojas, M. M. Hussain, “High performance electronics on flexible silicon for brain computing”, (IEEE) 2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Grenoble, France (pp. 1–4)
  23. *H. M. Fahad, A. M. Hussain, G. A. Sevilla Torres, S. K. Banerjee, M. M. Hussain, “Group IV nanotube transistors for next generation ubiquitous computing”, Proc. SPIE 9083, Micro- and Nanotechnology Sensors, Systems, and Applications VI, 90830K (June 4, 2014); doi:10.1117/12.2050096, Baltimore, MD, USA [Invited]
  24. *J. P. Rojas, G. A. Torres Sevilla, M. T. Ghoneim, A. M. Hussain, S. M. Ahmed, J. M. Nassar, R. R. Bahabry, M. Nour, A. T. Kutbee, E. Byas, B. Al-Saif, A. M. Alamri, M. M. Hussain, “Transformational electronics: a powerful way to revolutionize our information world”, Proc. SPIE 9083, Micro- and Nanotechnology Sensors, Systems, and Applications VI, 90831K (June 4, 2014); doi:10.1117/12.2050103, Baltimore, MD, USA [Invited]
  25. **A. Diab, G.A. Torres Sevilla, M.T. Ghoneim and M.M. Hussain, “High Temperature Performance of Flexible SOI FinFETs with Sub-20 nm Fins”, 2014 IEEE S3S Conference, October 6 - 9, 2014, Millbrae, CA, USA (pp. 1–2)
  26. **J. M. Nassar, A. M. Hussain, J. P. Rojas and M. M. Hussain, “Flexible Silicon-Germanium Devices With High-k/Metal Gate Stacks For Next Generation High Hole Mobility Channel Devices”, 46th International Conference on Solid State Materials and Devices (SSDM 2014) in Tsukuba, Ibaraki, Japan 8 – 11 September. 2014
  27. *M. T. Ghoneim, J. P. Rojas, A. T. Kutbee, A. N. Hanna, M. M. Hussain, “CMOS compatible generic batch process towards flexible memory on bulk monocrystalline silicon (100)”, 2014 (IEEE) International Conference on Electrical and Computer Engineering (ICECE), Dhaka, Bangladesh, 20 – 22 December, 2014 (pp. 655 – 658) [Keynote]
  28. *M. M. Hussain, J. P. Rojas, G. A. Torres Sevilla, “Mechanically Flexible Optically Transparent Silicon Fabric with High Thermal Budget Devices from Bulk Silicon (100)”, SPIE Defense, Security, and Sensing, 2013, 87251M-87251M-14 [Invited talk]
  29. *A. Mayet, C. Smith, M. Hussain, “Energy Reversible Switching from Amorphous Metal based Nanoelectromechanical Switch”, 2013 13th IEEE Conference on Nanotechnology (IEEE NANO 2013), Beijing, China, August 5-8, 2013 (pp 366–369)
  30. *R. Qaisi, C. Smith, M. Ghoneim, M. Hussain, “Direct Measurement of Graphene Contact Resistivity to Pre-deposited Metal in Buried Contact Test Structure”, 2013 13th IEEE Conference on Nanotechnology (IEEE NANO 2013), Beijing, China, August 5-8, 2013 (pp. 890–893)
  31. *A. M. Hussain, G. A.Torres Sevilla, K. R. Rader, M. M. Hussain, “Chemical Vapor Deposition Based Tungsten Disulfide (WS2) Thin Film Transistor”, (IEEE) 2013 Saudi International Electronics, Communications and Photonics Conference (SIECPC), Riyadh, Saudi Arabia, 27 – 30 April, 2013 (pp. 1 – 5)
  32. *A. Mayet, C. Smith, M. M. Hussain, “Amorphous Metal Based Nanoelectromechanical Switch”, (IEEE) 2013 Saudi International Electronics, Communications and Photonics Conference (SIECPC), Riyadh, Saudi Arabia, 27 – 30 April, 2013 (pp. 1 – 5)
  33. *R. Qaisi, C. Smith, M. M. Hussain, “Time Variant Layer Control in Atmospheric Pressure Chemical Vapor Deposition Based Growth of Graphene”, (IEEE) 2013 Saudi International Electronics, Communications and Photonics Conference (SIECPC), Riyadh, Saudi Arabia, 27 – 30 April, 2013 (pp. 1 – 6)
  34. **A. M. Hussain, H. M. Fahad, N. Singh, K. R. Rader, G. A. Torres Sevilla, U. Schwingenschlögl, M. M. Hussain, “Exploring SiSn as channel material for LSTP device applications”, Device Research Conference (DRC) 2013, Bend, Indiana, USA, 26 – 28, 2013 (pp. 93 – 94)
  35. *G. T. Sevilla, J. P. Rojas, S. Ahmed, A. Hussain, S. B. Inayat, M. M. Hussain, “Silicon Fabric for Multi-Functional Applications”, The 17th International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2013 & Eurosensors XXVII, Barcelona, Spain, 16 – 20 Jun 2013 (pp. 2636 – 2639)
  36. **J. P. Rojas, A. Syed, M. M. Hussain, “Mechanically Flexible, Optically Transparent Porous Mono-crystalline Silicon Substrate”, IEEE 25th International Conference on Micro Electro Mechanical Systems (MEMS), 2012, Paris, France, 29 Jan – 2 Feb, 2012 (pp. 281 – 284)
  37. *J. Rojas, M. M. Hussain, “Sub-15 nm Nano-pattern Generation by Spacer Width Control for High Density Precisely Positioned Self-assembled Device Nanomanufacturing”, 12th IEEE Conference on Nanotechnology (IEEE NANO) 2012, Birmingham, UK, 20 – 23 August, 2012 (pp. 1 – 5)
  38. *J. Mink, M. M. Hussain, “Excellent Endurance of MWCNT Anode in Micro-sized Microbial Fuel Cell” , 12th IEEE Conference on Nanotechnology (IEEE NANO) 2012, Birmingham, UK, 20 – 23 August, 2012 (pp. 1 – 4)
  39. *E. E. Aktakka, C. E. Smith, N. Ghafouri, R. L. Peterson, M. M. Hussain, K. Najafi, “Heterogeneous Integration of Co-evaporated Bismuth/Antimony Telluride Thin Films Based Thermoelectric Harvesters on FinFET CMOS Chip”, 12th Int. Conf. on Micro and Nanotechnology for Power Generation and Energy Conversion Apps. (PowerMEMS’12), Atlanta, Georgia, USA, 2 – 5 December 2012 (pp. 97-100)
  40. *H. A. Kloub, C. E. Smith, M. M. Hussain, “Multi States Electromechanical Switch For Energy Efficient Parallel Data Processing”, 2011 Saudi International Electronics, Communications and Photonics Conference (SIECPC), Riyadh, Saudi Arabia, 24 – 26 April 2011 (pp. 1 – 3)
  41. *C. Young, M. Baykan, A. Agarwal, H. Madan, K. Akarvardar, C. Hobbs, I. Ok, W. Taylor, C. E. Smith, M. M. Hussain, T. Nishida, S. Thompson, P. Majhi, P. Kirsch, S. Datta, and R. Jammy, “Critical Discussion on (100) and (110) Orientation Dependent Transport: nMOS Planar and FinFET”, 2011 IEEE Symposium on VLSI Technology (VLSI Symposium 2011), Kyoto, Japan, 14 – 16 June, 2011 (pp. 18 - 19)
  42. *H. F. Dadgour, M. M. Hussain, A. Cassell, N. Singh, K. Banerjee, “Impact of Scaling on the Performance and Reliability Degradation of Metal-Contacts in NEMS Devices”, 2011 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, 10 – 14 April 2011, (pp. 3D.3.1 - 3D.3.10)
  43. *C. S. Park, M. M. Hussain, K. Tateiwaa, J. Huang, J. Linb, T. Ngai, S. Lian, K. Rader, B. Taylor, P. Kirsch, R. Jammy, “Alternative Approaches for High-k/Metal Gate CMOS: Low Temperature Process (Gate Last) and SiGe Channel”, 2010 International Symposium on VLSI Technology Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, 26 – 28 April, 2010 (pp. 80 – 81) [First two authors equally contributed to this paper]
  44. *C.D. Young, A. Neugroschel, K. Matthews, C. Smith, H. Park, M.M. Hussain, P. Majhi, G. Bersuker, “Improved Interface Characterization Technique for High-k/Metal Gated MugFETs Utilizing a Gated Diode Structure”, 2010 International Symposium on VLSI Technology Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, 26 – 28 April, 2010 (pp. 68 – 69).
  45. *C. Smith, S. Parthasarathy, B. E. Coss, J. Williams, H. Adhikari, G. Smith, B. Sassman, M. M. Hussain, P. Majhi, R. Jammy, “Strain Engineering in Nanoscale CMOS FinFETs and Methods to Optimize RS/D”, 2010 International Symposium on VLSI Technology Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, 26 – 28 April, 2010 (pp. 156 – 157)
  46. *M. M. Hussain, H. Fahad, J. Rojas, M. Hasan, A. Talukdar, J. Oommen, J. Mink, "Self-powered integrated systems-on-chip (energy chip)", Proc. SPIE 7679, 767914 (2010); doi:10.1117/12.850811 [Invited]
  47. *H. Dadgour, M. M. Hussain, C. E. Smith, K. Banerjee, “Design and Analysis of Compact Ultra Low-Power Logic Gates Using Laterally-Actuated Double-Electrode NEMS”, 2010 47th ACM/IEEE Design Automation Conference (DAC) 2010, Anaheim, CA, USA, 13 – 18 June, 2010 (pp. 893 – 896)
  48. *H. Dadgour, M. M. Hussain, C. E. Smith, K. Banerjee, “A New Paradigm in the Design of Energy-Efficient Digital Circuits Using Laterally-Actuated Double-Gate NEMS”, 2010 ACM/IEEE International Symposium on Low-Power Electronics and Design (ISLPED), Austin, TX, USA, 18 – 20 August, 2010 (pp. 7 – 12)
  49. *M. M. Hasan, A.B.M.H. Rashid, M.M. Hussain, “A Novel Match-line Selective Charging Scheme for High-Speed, Low-Power and Noise-Tolerant Content-Addressable Memory”, (IEEE) 2010 International Conference on Intelligent and Advanced Systems (ICIAS), Kuala Lumpur, Malaysia, 15 – 17 June, 2010 (pp. 1 – 4)
  50. *C. S. Park, J. W. Yang, M. M. Hussain, C. Y. Kang, J. Huang, P. Sivasubramani, C. Park, K. Tateiwa, Y. Harada, J. Barnett, C. Melvin, G. Bersuker, P. D. Kirsch, B. H. Lee, H. H. Tseng, R. Jammy “La-doped metal/High-K nMOSFET for Sub-32nm HP and LSTP Application”, International Symposium on VLSI Technology, Systems, and Applications 2009 (VLSI-TSA), Taiwan, 27 – 29 April, 2010 (pp. 59 – 60)
  51. *C. S. Park, M. M. Hussain, J. Huang, C. Park, K. Tateiwa, C. Young, H. K. Park, M. Cruz, D. Gilmer, K. Rader, J. Price, P. Lysaght, D. Heh, G. Bersuker, P. D. Kirsch, H. -H. Tseng, R. Jammy, “A Scalable and Highly Manufacturable Single Metal Gate/High-k CMOS Integration for Sub-32nm Technology for LSTP Applications”, 2009 Symposium on VLSI Technology (VLSI Symposium), Kyoto, Japan, 16 – 18 June 2009, (pp. 208 – 209) [First two authors equally contributed to this paper]
  52. *J. Huang, D. Heh, P. Sivasubramani, P. D. Kirsch, G. Bersuker, D. C. Gilmer, M.A. Quevedo-Lopez, M. M. Hussain, P. Majhi, P. Lysaght, H. Park, N. Goel, C. Young, C.S. Park, C. Park, M. Cruz, V. Diaz, P. Y. Hung, J. Price, H.-H. Tseng, R. Jammy, “Gate First High-k/Metal Gate Stacks with Zero SiOx Interface Achieving EOT=0.59nm for 16nm Application”, 2009 Symposium on VLSI Technology (VLSI Symposium), Kyoto, Japan, 16 – 18 June 2009, (pp. 34 – 35)
  53. *K.S. Min, C. Y. Kang, C. Park, B. J. Park, M. M. Hussain, Jack C. Lee ,G. Y. Yeom, P. Kirsch, H-H, Tseng, R. Jammy, “A Novel Damage-Free High-k Etch Technique Using Neutral Beam-Assisted Atomic Layer Etching (NBALE) for Sub-32nm Technology Node Low Power Metal Gate/High-k Dielectric CMOSFETs”, 2009 IEEE International Electron Devices Meeting (IEDM), Baltimore, Maryland, USA, 7 – 9 December 2009, (pp. 1 – 4)
  54. *T. G. Dziura, B. Bunday, C. Smith, M. M. Hussain, R. Harris, X. Zhang, J. M. Price, “Measurement of high-k and metal film thickness on FinFET sidewalls using scatterometry”, Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 69220V (24 March 2008); doi: 10.1117/12.773593
  55. *S. Suthram, H. R. Harris, M. M. Hussain, C. Smith, C. D. Young, J. –W. Yang, K. Mathews, K. Freeman, P. Majhi, H. –H. Tseng, R. Jammy, S. E. Thompson, “Understanding Strain Effects on Double-Gate FinFET Drive-Current Enhancement, Hot-Carrier Reliability and Ring-Oscillator Delay Performance via Uniaxial Wafer Bending Experiments”, International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2008, Taiwan, 21 – 23 April 2008, (pp. 20 – 21)
  56. *J. –W. Yang, H. R. Harris, M. M. Hussain, B. Sassman, H. –H. Tseng, R. Jammy, “Enhanced Performance and SRAM Stability in FinFET with Reduced Process Steps for Source/Drain Doping”, International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2008, Taiwan, 21 – 23 April 2008 , (pp. 152 – 153)
  57. *J. Huang, P. D. Kirsch, M. M. Hussain, D. Heh, P. Sivasubramani, C. Young, D. C. Gilmer, C. S. Park, Y. N. Tan, C. Park, H. R. Harris, P. Majhi, G. Bersuker, B. H. Lee, H. –H. Tseng, R. Jammy, “Gate First Band Edge High-k/Metal Stacks with EOT=0.74nm for 22nm Node nFETs”, International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2008, Taiwan, 21 – 23 April 2008, (pp. 163 – 164)
  58. *M. M. Hussain, K. Rader, C. Smith, C. Young, S. Suthram, C. Park, M. Cruz, P. D. Kirsch, R. Jammy, “Additive Process Induced Strain (APIS) Technology for 32nm High-k/Metal Gate MOSFETs”, 2008 International Conference on Solid State Devices and Materials (SSDM), Ibaraki, Japan, 23 – 26 September 2008
  59. *J. Huang, D. Heh, P. D. Kirsch, C. Y. Kang, G. Bersuker, M. Hussain, P. Majhi, P. Sivasubramani, D. C. Gilmer, N. Goel, M.A. Quevedo-Lopez, C. Young, C.S. Park, C. Park, P. Y. Hung, J. Price, H.R. Harris, B .H. Lee, H.-H. Tseng, R. Jammy, “Device and Reliability Improvement of LaOx capped HfSiON+LaOx/MG Gate Stacks with Tinv=1.15nm for 22nm Node Application”, IEEE International Electron Devices Meeting (IEDM), 2008, San Francisco, California, USA, 15 – 17 December 2008 , (pp. 1 – 4)
  60. *H. R. Harris, P. Kalra, P. Majhi, M. Hussain, D. Kelly, J. Oh, D. He, J. Barnett, P. Kirsch, G. Gebara, J. Jur, D. Lichtenwalner, T. P. Ma, S. Thompson, B. H. Lee, H.-H.Tseng, R. Jammy, “Band-Engineered Low PMOS VT with High-K/Metal Gate Including High Performance Dual Channel CMOS Integration”, IEEE Symposium on VLSI Technology, 2007 (VLSI Symposium), Kyoto, Japan, 12 – 14 June 2007 , Page(pp. 154 – 155)
  61. *M. M Hussain, G. Gebara, J. Yang, P. Kalra, J. Price, B. Sassman, K. Matthews, H. R. Harris, H. H. Tseng, R. Jammy, "Dual work function high-k/Metal Gate CMOS FinFETs", 37th European Solid State Device Research Conference (ESSDERC), 2007, Munich, Germany, 11 – 13 September 2007 , (pp. 207 – 209)
  62. *C. D. Young, K. Matthews, S. Suthram, M. M. Hussain, C. Smith, R. Harris, R. Choi, H.-H. Tseng, “Hot Carrier Injection Study on Sidewall Surfaces of HfSiON/TiN FinFETs”, 2007 IEEE 38th Semiconductor Interface Specialists Conference (SISC), Arlington, Virginia, USA, 6 – 8 December 2007
  63. *P. Sivasubramani, P. D. Kirsch, J. Huang, C. Park, Y. N. Tan, D. C. Gilmer, C. Young, K. Freeman, M. M. Hussain, H. R. Harris, S. C. Song, D. Hen, R. Choi, P. Majhi, G. Bersuker, P. Lysaght, B. H. Lee, H. –H. Tseng, J. S. Jur, D. J. Lichtenwalner, A. I. Kingon, R. Jammy,“ Aggressively Scaled High-k Gate Dielectric with Excellent Performance and High Temperature Stability for 32nm and Beyond”, IEEE International Electron Devices Meeting (IEDM), 2007, Washington DC, USA, 10 – 12 December 2007, (pp. 543 – 546)
  64. *S. Suthram, P. Majhi, G. Sun, P. Kalra, H. R. Harris, K. Choi, D. Heh, J. Oh, D. Kelly, R. Choi, B. J. Cho, M. M. Hussain, C. Smith, S. Banerjee, W. Tsai, S. E. Thompson, H. –H. Tseng, R. Jammy, “High Performance pMOSFETs Using Si/Si1-xGex/Si Quantum Wells with High-k/Metal Gate Stacks and Additive Uniaxial Strain for 22 nm Technology Node”, IEEE International Electron Devices Meeting (IEDM), 2007, Washington DC, USA, 10 – 12 December 2007, (pp. 727 – 730)
  65. *H. R. Harris, S. E. Thompson, S. Krishnan, P. Kirsch, P. Majhi, C. E. Smith, M. M. Hussain, G. Sun, H. Adhikari, S. Suthram, B. H. Lee, H. –H. Tseng, R. Jammy, Flexible, Simplified CMOS on Si(110) with Metal Gate/High-k for HP and LSTP, IEEE International Electron Devices Meeting (IEDM), 2007, Washington DC, USA, 10 – 12 December 2007, (pp. 57 – 60)
  66. *Z. Zhang, M. M. Hussain, S. C. Song, S. H. Bae, B. H. Lee, “Impact of Metal Wet Etch on Device Characteristics and Reliability for Dual Metal Gate/High-k CMOS”, 44th Annual IEEE International Reliability Physics Symposium Proceedings (IRPS), 2006, San Jose, USA, 26 – 30 March 2006, (pp. 388 – 391)
  67. *S. C. Song, Z. Zhang, M. M. Hussain, C. Huffman, J. Barnett, S. H. Bae, H. J. Li, P. Majhi, C. S. Park, B. S. Ju, H. K. Park, C. Y. Kang, R. Choi, P. Zeitzoff, H. H. Tseng, B. H. Lee, R. Jammy, ”Highly Manufacturable 45nm LSTP CMOSFETs Using Novel Dual High-k and Dual Metal Gate (DHDMG) CMOS Integration”, Digest of Technical Papers 2006 Symposium on VLSI Technology (VLSI Symposium), 2006, Hawaii, USA, 13 – 15 June 2006, (pp. 13 – 14)
  68. *M. M. Hussain, S. C. Song, C. Y. Kang, M. Quevedo-Lopez, H. N. Alshareef, B. Sassman, R. Choi, B. H. Lee, “Compatibility of ALD HfSiON with Dual Metal Gate CMOS Integration Scheme”, 2006 International Conference on Solid State Devices and Materials (SSDM), Pacifico Yokohama, Japan, 12 – 15 September 2006
  69. *B. H. Lee, S. C. Song, M. Hussain, J. Barnett, R. Jammy, ”Challenges in dual workfunction metal gate CMOS integration”, ECS Fall Meeting 2006, Cancun, Mexico, 29 October – 3 November 2006 (Archieved in ECS Trans. 2006 3(2): 263-274; doi:10.1149/1.2356286 ; Published 20 October 2006)
  70. *C. Y. Kang, R. Choi, S. C. Song, B. S. Ju, M. M. Hussain, B. H. Lee, J. W. Yang, D. T. Pham, H. –H. Tseng, ”Effects of ALD TiN Metal Gate Thickness on Metal Gate/High-k Dielectric SOI FinFET Characteristics”, 2006 IEEE International SOI Conference, Buffalo, NY, USA, 2 – 5 October 2006, (pp. 135 – 136)
  71. *C. Y. Kang, R. Choi, S. H. Bae, S. C. Song, M. M. Hussain, C. Yong, D. Heh, G. Bersuker, B. H. Lee, “Effects of Optimization of Gate Edge Profile on Sub-45 nm Metal Gate High-k Dielectric Metal Oxide Semiconductor Field Effect Transistors Characteristics”, 2006 International Conference on Solid State Devices and Materials (SSDM), Pacifico Yokohama, Japan, 12 – 15 September 2006
  72. *C. Y. Kang, R. Choi, S. C. Song, K. Choi, B. S. Ju, M. M. Hussain, B. H. Lee, G. Bersuker, C. Young, D. Heh, P. Kirsch, J. Barnet, J-W. Yang, W. Xiong, H-H Tseng, R. Jammy, "A Novel Electrode-Induced Strain Engineering for High Performance SOI FinFET utilizing Si (110) Channel for Both N and PMOSFETs", International Electron Devices Meeting (IEDM), 2006, San Francisco, California, USA, 11 – 13 December, 2006, (pp. 1 – 4)
  73. *H. R. Harris, H. Alshareef, H.C. Wen, S. Krishnan, K. Choi, H. Luan, D. Heh, C.S. Park, H.B. Park, M. Hussain, B.S. Ju, P.D. Kirsch, S.C. Song, P. Majhi, B.H. Lee, R. Jammy, "Simplified manufacturable band edge metal gate solution for NMOS without a capping layer", International Electron Devices Meeting (IEDM), 2006, San Francisco, California, USA, 11 – 13 December, 2006, (pp. 1 – 4)
  74. *M. M. Hussain, N. Moumen, J. Barnett, J. Saulters, D. Baker, M. Akbar, Z. Zhang, “Metal Wet Etch Process Development for Dual Metal Gate CMOS”, ECS 207th Spring Meeting 2005, Quebec City, QC, Canada, 15 – 20 May, 2005 (Archieved in Electrochem. Solid-State Lett. 2005 volume 8, issue 12, G333-G336)
  75. *M. S. Akbar, N. Moumen, J. Peterson, M. M. Hussain, “Effects of Precursor Pulse time in ALD HfO2”, ECS 207th Spring Meeting 2005, Quebec City, QC, Canada, 15 – 20 May, 2005
  76. *J. Barnett, N. Moumen, J. Peterson, M. Hussain, G. Bersuker, “The Role of Surface Preparation in the Implementation of High-κ Dielectrics for 45nm and Beyond”, Proceedings of the SCP 9th International Symposium on Wafer Cleaning and Surface Preparation, 8 – 9 June, 2005
  77. *Z. B. Zhang, S. C. Song, C. Huffman, J. Barnett, N. Moumen, H. Alshareef, P. Majhi, M. Hussain, M. S. Akbar, J. H. Sim, S. H. Bae, B. Sassman, and B. H. Lee, “Integration of Dual Metal Gate CMOS with TaSiN (NMOS) and Ru (PMOS) Gate Electrodes on HfO2 Gate Dielectric”, Digest of Technical Papers Symposium on VLSI Technology (VLSI Symposium), 2005, Kyoto-Japan, June 2005, (pp. 50 – 51)

Abstracts (*Platform Speaker; **Poster; Student or post-doc advisees are underlined)

Conferences after joining KAUST

  1. **R. R. Bahabry, A. C. Sepulveda, A. T. Kutbee, S. F. Shaikh, M. M. Hussain, “Corrugation Architecture Enabled Ultra-Flexible Mono-Crystalline Silicon Solar Cells via Plasma Etching and Laser Ablation”, 7th World Conference on Photovoltaic Energy Conversion, Waikoloa, Hawaii, USA 10-15 June 2018,
  2. **R. Bahabry, M. M. Hussain, “Low Cost Metallization for Crystalline Silicon Photovoltaics”, C3E Women in Clean Energy Symposium 2016, Stanford University, Stanford, California, USA 31 May 2016.
  3. **A. T. Kutbee, M. M. Hussain, “Flexible Li-Ion Microbattery for Wearable Electronics”, C3E Women in Clean Energy Symposium 2016, Stanford University, Stanford, California, USA 31 May 2016.
  4. **A. N. Hanna, M. T. Ghoneim, M. M. Hussain, “FET transconductance as a probe of ferroelectric/semiconductor interface“, 46th IEEE Semiconductor Interface Specialist Conference (SISC 2015), Washington DC, USA, 8 – 10 December 2015
  5. **M. T. Ghoneim, M. M. Hussain, “Nanoscale Thin PZT Based Capacitors for Dual Temperature Sensing and Non-Volatile Memory” 4th Nano Today Conference, Dubai, UAE, 4 – 6 December, 2015
  6. *A. M. Hussain, M. M. Hussain, “Design Considerations For Micro-Fabrication Of Optimized Lateral Sprint Structures For Wearable Electronics,” ASME 2015 International Mechanical Engineering Congress & Exposition (IMECE 2015), Houston, Texas, USA, 14 – 20 November, 2015
  7. **A. M. Hussain, M. M. Hussain, “Nano-layer Silicon-Tin (SiSn) Alloy: Performance Enhancing Semiconductor Material System” 4th Nano Today Conference, Dubai, UAE, 4 – 6 December, 2015
  8. *M. Hussain, J. Rojas, G. Torres Sevilla, A. Hussain, M. Ghoneim, “Wearable Interactive Electronics for Smart Living and Sustainable Future,” Nanotech Dubai 2015, Dubai, UAE, 16 – 18 March, 2015 (Plenary)
  9. *A. Hussain, M. Mustafa Hussain, “Flexible, High Strength, Copper Conductors for Flexible Electronic Circuits” 23rd International Conference on Processing and Fabrication of Advanced Materials, IIT Roorkee, India, 5 – 7 December, 2014 (Invited)
  10. *R. R. Bahabry, M. M. Hussain, “Mono-crystalline Bulk Silicon Based High-Efficiency Flexible Solar Cell”, TMS Middle East - Mediterranean Materials Congress on Energy and Infrastructure Systems (MEMA 2015), Doha, Qatar, 11 – 14 January, 2015
  11. *M. T. Ghoneim, A. T. Kutbee, M. M. Hussain, “Reliability of Conformal Electronics in Curvilinear Environments: Device First vs. Device Last Approach”, 2014 IEEE Conference on Reliability Science for Advanced Materials and Devices (RSAMD 2014), Golden, Colorado, USA, 7 – 9 October, 2014
  12. *A. Mayet, M. M. Hussain, “Amorphous WNx Metal For Accelerometers and Gyroscope”, MRS Fall Meeting 2014, Boston, Massachusetts, USA, 30 November – 5 December, 2014
  13. *M. T. Ghoneim, J. P. Rojas, A. T. Kutbee, M. M. Hussain, “Towards Ultra-High Density Fully-Flexible Inorganic Memory”, MRS Fall Meeting 2014, Boston, Massachusetts, USA, 30 November – 5 December, 2014
  14. **R. R. Bahabry, J. P. Rojas, A. M. Hussain, M. M. Hussain, “Novel interdigitated back contact for flexible mono-crystalline silicon solar cells”, MRS Fall Meeting 2014, Boston, Massachusetts, USA, 30 November – 5 December, 2014
  15. *A. T. Kutbee, S. M. Ahmed, J. M. Nassar, A. M. Hussain, M. M. Hussain, “High Lithium ion diffusivity in rf sputtered LiCoO2 thin films for Microbatteries”, MRS Fall Meeting 2014, Boston, Massachusetts, USA, 30 November – 5 December, 2014
  16. **R. M. Qaisi, C. E. Smith, M. M. Hussain, “Buried gate transistor for modulation of graphene channel conductance”, MRS Fall Meeting 2014, Boston, Massachusetts, USA, 30 November – 5 December, 2014
  17. **A. M. Hussain, E. B. Lizardo, G. A. Torres Sevilla, J. M. Nassar, M. M. Hussain, “Stretchable and Flexible Copper Conductors for Next Generation Wearable Electronics”, MRS Fall Meeting 2014, Boston, Massachusetts, USA, 30 November – 5 December, 2014
  18. **S. M. Ahmed, E. B. Lizardo, C. Sapsanis, K. N. Salama, M. M. Hussain, “Humidity Sensor on Flexible Semi-transparent Silicon for Smart Skin”, MRS Fall Meeting 2014, Boston, Massachusetts, USA, 30 November – 5 December, 2014
  19. **J. M. Nassar, M. M. Hussain, “Flexible High Speed Devices From Bulk Mono-crystalline Silicon”, MRS Fall Meeting 2014, Boston, Massachusetts, USA, 30 November – 5 December, 2014
  20. **E. B. Lizardo, M. M. Hussain, “RF Antennas on Flexible and Semi-Transparent Silicon Substrate”, MRS Fall Meeting 2014, Boston, Massachusetts, USA, 30 November – 5 December, 2014
  21. *K. K. Kalantan, J. P. Rojas, M. M. Hussain, “Contact Resistance Optimization for Enhanced Performance in Microfabricated Microbial Fuel Cells”, MRS Fall Meeting 2014, Boston, Massachusetts, USA, 30 November – 5 December, 2014
  22. *C. D. Young, I. Mejia, M. T. Ghoneim, M. Quevedo-Lopez, M. M. Hussain, “Reliability Investigation of Viable Device Structures for Future Flexible Electronic Applications”, International Semiconductor Device Research Symposium 2013, Maryland, USA, 11 – 13 December, 2013 [Invited]
  23. *H. M. Fahad, M. M. Hussain, “Vertical Si1-xGex Channel Nanotube Field Effect Transistors for Next Generation PMOS”, IEEE Nanotechnology Materials and Devices Conference 2013, Tainan, Taiwan, 6 – 9 October, 2013
  24. *J. M. Nassar, A. M. Hussain, G. A. Torres Sevilla, J. P. Rojas, H. M. Fahad, M. M. Hussain, “Transformational Electronics: High-k/Metal Gate Devices on Flexible and Semi-transparent Epitaxially Grown SiGe on Bulk Silicon (100)”, IEEE Nanotechnology Materials and Devices Conference 2013, Tainan, Taiwan, 6 – 9 October, 2013
  25. *G. A. Torres Sevilla, A. M. Hussain, A. N. Hanna, M. M. Hussain, “Wavy-Channel Poly-Si Thin Film Transistor”, IEEE Nanotechnology Materials and Devices Conference 2013, Tainan, Taiwan, 6 – 9 October, 2013
  26. *A. M. Hussain, H. M. Fahad, N. Singh, G. A. Torres Sevilla, U. Schwingenschlögl, M. M. Hussain, “Tin (Sn) – An Unlikely Ally for Silicon CMOS?”, IEEE Nanotechnology Materials and Devices Conference 2013, Tainan, Taiwan, 6 – 9 October, 2013
  27. **A. M. Hussain, H. M. Fahad, N. Singh, K. R. Rader, G. A. Torres Sevilla, U. Schwingenschlögl, M. M. Hussain, “SiSn Channel Material for Enhanced Performance in MOSFETs”, 3rd Berkeley Symposium on Energy Efficient Electronic Systems, Berkeley, California, USA, 28 – 29 October, 2013
  28. *A. N. Hanna, M. M. Hussain, “New TFT architecture for high performance low power flexible thin film oxide transistor”, MRS Fall Meeting 2013, Boston, Massachusetts, USA, 1 – 6 December, 2013
  29. *A. M. Hussain, S. B. Inayat, J. P. Rojas, G. A. Torres Sevilla, M. M. Hussain, “Stretchable Silicon Fabric – Mechanics and Mechanism”, MRS Fall Meeting 2013, Boston, Massachusetts, USA, 1 – 6 December, 2013
  30. *H. M. Fahad, M. M. Hussain, “Switching in Silicon Nanotube Field Effect Transistors”, MRS Fall Meeting 2013, Boston, Massachusetts, USA, 1 – 6 December, 2013
  31. **S. M Ahmed, A. M Hussain, J. P. Rojas, M. M. Hussain, “Solid State MEMS Devices on Flexible and Semi-transparent Silicon Platform”, MRS Fall Meeting 2013, Boston, Massachusetts, USA, 1 – 6 December, 2013
  32. *G. A. Torres Sevilla, A. M. Hussain, J. P. Rojas, M. M. Hussain, “Large Area Thin (70 nm) Flexible Monocrystalline Silicon for CMOS Compatible Device Integration”, MRS Fall Meeting 2013, Boston, Massachusetts, USA, 1 – 6 December, 2013
  33. **J. M. Nassar, A. M Hussain, H. M. Fahad, M. M. Hussain, “Strained Si Nanowires Growth on SnO2 Catalyst”, MRS Fall Meeting 2013, Boston, Massachusetts, USA, 1 – 6 December, 2013
  34. **M. T. Ghoneim, J. P. Rojas, M. M. Hussain, “Ultra Large Scale Integration of Flexible Inorganic Electronics”, MRS Fall Meeting 2013, Boston, Massachusetts, USA, 1 – 6 December, 2013
  35. **R. R. Bahbary, S. B. Inayat, C. E. Smith, K. R. Rader, M. M. Hussain, “Thermoelectricity from Building Infrastructure”, MRS Fall Meeting 2013, Boston, Massachusetts, USA, 1 – 6 December, 2013
  36. **R. M. Qaisi, C. E. Smith, M. M. Hussain, “Ion Sensitivity from Back Gated Graphene Field Effect Transistor”, MRS Fall Meeting 2013, Boston, Massachusetts, USA, 1 – 6 December, 2013
  37. *S. B. Inayat, M. M. Hussain, “Thermoelectricity for Green Building Exterior Glasses”, The 31st International & 10th European Conference on Thermoelectrics 2012, Aalborg, Denmark, 9 – 12 July, 2012
  38. **A. Emwas, M. M. Hussain, “Utilizing DOSY NMR Spectroscopy to Probe the Molecular Size of Nano-particle Materials”, 53rd Experimental Nuclear Magnetic Resonance Conference, Miami, Florida, USA, 12 April 2012
  39. *S. B. Inayat, M. M. Hussain, “Transforming Window Glasses into Thermoelectric Generators for Green Building Technologies”, 2012 Asia Pacific Clean Energy Summit, Honolulu, Hawaii, USA, 12 – 15 August, 2012
  40. **S. M. Ahmed, J. P. Rojas, M. M. Hussain, “Towards the Energy Chip”, 2012 Asia Pacific Clean Energy Summit, Honolulu, Hawaii, USA, 12 – 15 August, 2012
  41. **J. E. Mink, M. M. Hussain, “High Performance Micro-sized Microbial Fuel Cell for Lab-On-Chip”, 2012 Asia Pacific Clean Energy Summit, Honolulu, Hawaii, USA, 12 – 15 August, 2012
  42. **J. E. Mink, M. M. Hussain, “Carbon Based Nanomaterials for Micro-sized Microbial Fuel Cells”, North American - International Society of Microbial Electrochemical Technologies Meeting, Ithaca, New York, USA, 9 – 10 October 2012
  43. *J. P. Rojas, M. M. Hussain, “Highly Manufacturable Fabrication Process for Mechanically Flexible Silicon based Membranes with Adjustable Size, Pore Size and Density”, MRS Fall Meeting 2012, Boston, Massachusetts, USA, 25 – 30 November, 2012
  44. *H. M. Fahad, M. M. Hussain, “Vertically Aligned Epitaxial Silicon Nanowires and Tubes”, MRS Fall Meeting 2012, Boston, Massachusetts, USA, 25 – 30 November, 2012
  45. *M. T. Ghoneim, C. E. Smith, M. M. Hussain, “Determination of Efficient Transfer Process for Chemical Vapor Deposition Grown Graphene” , MRS Fall Meeting 2012, Boston, Massachusetts, USA, 25 – 30 November, 2012
  46. *S. B. Inayat, M. M. Hussain, “Nanomaterials Embedded Thermoelectric Windows as Solar Based Energy Harvesters for Green Building Technology”, MRS Fall Meeting 2012, Boston, Massachusetts, USA, 25 – 30 November, 2012
  47. **J. E. Mink, M. M. Hussain, “Graphene Anode Integrated High-performance Mico-Sized Microbial Fuel Cell”, MRS Fall Meeting 2012, Boston, Massachusetts, USA, 25 – 30 November, 2012
  48. **A. M. Mayet, M. M. Hussain, “Harsh Environment Compatible Amorphous Metal Based Nanoelectromechanical Switch and Systems”, MRS Fall Meeting 2012, Boston, Massachusetts, USA, 25 – 30 November, 2012
  49. *J. E. Mink, J. P. Rojas, M. M. Hussain, “CNT-Enbled Microsized Microbial Fuel Cell”, 5th Graduate Research Seminar at King Fahd University of Petroleum and Minerals (KFUPM), Dammam, Saudi Arabia, May 2011 [Best Presentation Award]
  50. *J. E. Mink, J. P. Rojas, M. M. Hussain, “Carbon Nanotube Anode Producing Improved Power Density in 1.25 µl Micro-Microbial Fuel Cell”, 3rd International Microbial Fuel Cell Conference, Leeuwarden, The Netherlands, 6 – 8 June, 2011
  51. *M. M. Hussain, C. S. Park, K. Tateiwa, C. Y. Kang, K. Rader, J. Huang, M. Cruz, P. Majhi, P. Kirsch, R. Jammy, “Integration of SiGe Channel PMOS and Si NMOS into Dual Channel High-k/Metal Gate CMOS for Low Standby Power Logic Applications”, 5th International conference on SiGe Technology and Device (ISTDM) 2010, Stockholm, Sweden, 24 – 26 May, 2010
  52. *M. M. Hasan, M. M. Hussain, “Carbon Nanotube Transistor in Sub-threshold Mode for Ultra-low Power Logic Circuits and SRAM”, 4th Graduate Seminar Day at King Fahd University of Petroleum and Minerals (KFUPM) 2010, Dammam, Saudi Arabia, May 2010
  53. *J. E. Mink, J. P. Rojas, M. M. Hussain, “CNT-Enhanced Microfabricated Microbial Fuel Cell”, 4th Graduate Seminar Day at King Fahd University of Petroleum and Minerals (KFUPM) 2010, Dammam, Saudi Arabia, May 2010
  54. *J. Oommen, M. M. Hussain, “Nano-scale Ionic Materials (NIMs)”, 4th Graduate Seminar Day at King Fahd University of Petroleum and Minerals (KFUPM) 2010, Dammam, Saudi Arabia, May 2010
  55. *C. D. Young, J.-W. Yang, K. Matthews, S. Suthram, M. M. Hussain, G. Bersuker, R. Harris, R. Choi, B. H. Lee, and H.-H. Tseng, “Hot Carrier Degradation in HfSiON/TiN FinFETs with Different Substrate Orientations” 15th Workshop on Dielectrics in Microelectronics (WoDiM) 2008, Berlin, Germany, 23 – 25 June, 2008
  56. *C. E. Smith, M. M. Hussain, B. Aguirre, P. Kalra, J. –W. Yang, G. Gebara, B. Sassman, R. Harris, H. –H. Tseng, R. Jammy, “High-k/Metal Gate Stack Engineering in FinFET Devices”, (IEEE) 2007 International Symposium on Advanced Gate Stack Technology (ISAGST), Dallas, Texas, USA, 26 – 28 September, 2007
  57. *M. M. Hussain, C. Smith, S. C. Song, B. H. Lee, R. Jammy, “Metal Gate Induced Strain Engineering for High-k/Metal Gate MOSFETs”, (IEEE) 2007 International Symposium on Advanced Gate Stack Technology (ISAGST), Dallas, Texas, USA, 26 – 28 September, 2007
  58. *S. C. Song, M. M. Hussain, B. S. Ju, C. Y. Kang, R. Choi, P. Zeitzoff, B. H. Lee, H. –H. Tseng, “Non-planar MOSFETs with Tunable Threshold Voltage (Vt) Using ALD High-k/Metal Gate Stack”, Semiconductor Industry Association ALD Conference 2006, South Korea
  59. *M. M. Hussain, S. C. Song, J. Barnett, B. S. Ju, B. W. Sassman, B. H. Lee, ”Realization of high-k/metal gate stack in dual metal gate CMOS: an integration perspective”, International Symposium on Advanced Gate Stack Technology (ISAGST), 2006¸ Austin, Texas, USA, September, 2006
  60. *J. Barnett, M. Hussain, J. Peterson, P. Kirsch, S. C. Song, C. S. Park, G. Bersuker, B. H. Lee, H. R. Huff, ”Surface Preparation Technique Used for Fabricating High-k/Metal Gate Device Structures”, 2006 ECS International Semiconductor Technology Conference (ECS-ISTC), Shanghai, China, 21 – 23 March, 2006
  61. *M. M. Hussain, N. Moumen, J. Barnett, J. Saulters, D. Baker, “SC1: An Effective Etch Solution for Nano-scale CMOS”, Surface Preparation and Cleans Conference (SPCC), 2005, Austin, Texas USA, 26 – 28 September. 2005
  62. *J. Barnett, N. Moumen, J. Peterson, M. Hussain, G. Bersuker, “The Role of Surface Preparation in the Implementation of High-κ Dielectrics for 45nm and Beyond”, Proceedings of the SCP 9th International Symposium on Wafer Cleaning and Surface Preparation, 8 – 9 June, 2005
  63. *Z. Zhang, M. M. Hussain, J. Burnett, C. Huffman, S. C. Song, B. H. Lee, “Integration Options for Dual Metal/High-k Gate CMOS”, International Symposium on Advanced Gate Stack Technology (ISAGST), 2005, Austin, Texas, USA, September 2005