• SCI PAPERS
[01] "Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2 semiconductors (M = Mo, W; X = S, Se, Te)"
W. S. Yun, S. W. Han*, S. C. Hong*, I. G. Kim, and J. D. Lee
Phys. Rev. B 85, 033305 (2012). [IF: 3.2] {1241}
[02] "Band-gap transition induced by interlayer van der Waals interaction in MoS2"
S. W. Han, H. Kwon, S. K. Kim, S. Ryu, W. S. Yun, D. H. Kwon, J. H. Hwang, J.-S. Kang, J. Baik, H. J. Shin, and S. C. Hong*
Phys. Rev. B 84, 045409 (2011). [IF: 3.2] {364}
[03] "A Chemical Route to Activation of Open Metal Site in the Copper-Based Metal-Organic Framework Materials HKUST-1 and Cu-MOF-2"
H. K. Kim, W. S. Yun, M.-B. Kim, J. Y. Kim, Y.-S. Bae, J. D. Lee, and N. C. Jeong*
J. Am. Chem. Soc. 137, 10009−10015 (2015). [IF: 14.4] {234}
[04] "Local Strain Induced Bandgap Modulation and Photoluminescence Enhancement of Multilayer Transition Metal Dichalcogenides"
K. P. Dharkal, S. Roy, H. Jang, X. Chen, W. S. Yun, H. Kim, J. D. Lee, J. Kim, and J.-H. Ahn*
Chem. Mater. 29, 5124−5133 (2017). [IF: 7.2] {128}
[05] "Stacking-controllable interlayer coupling and symmetric configuration of multilayered MoS2"
S. M. Shinde, K. P. Dharkal, X. Chen, W. S. Yun, J. D. Lee, H. Kim*, and J.-H. Ahn*
NPG Asia Mater. 10, e468 (2018). [IF: 8.6] {124}
[06] "Controlling Ferromagnetic Easy Axis in a Layered MoS2 Single Crystal"
S. W. Han, Y. H. Hwang, S.-H. Kim, W. S. Yun, J. D. Lee, M. G. Park, S. Ryu, J. S. Park, D.-H. Yoo, S.-P. Yoon, S. C. Hong, K. S. Kim*, and Y. S. Park*
Phys. Rev. Lett. 110, 247201 (2013). [IF: 8.1] {119}
[07] "Unexpected strong magnetism of Cu doped single-layer MoS2 and its origin"
W. S. Yun and J. D. Lee*
Phys. Chem. Chem. Phys. 16, 8990−8996 (2014). [IF: 2.9] {114}
[08] "Strain-Induced Magnetism in Single-Layer MoS2: Origin and Manipulation"
W. S. Yun and J. D. Lee*
J. Phys. Chem. C 119, 2822−2827 (2015). [IF: 3.3] {84}
[09] "Multiple Coordination Exchange for Room-Temperature Activation of Open Metal Sites in Metal-Organic Frameworks"
J. Bae, J. S. Choi, S. Hwang, W. S. Yun, D. Song, J. D. Lee, and N. C. Jeong*
ACS Appl. Mater. Interfaces 9, 24743−24752 (2017). [IF: 8.3] {69}
[10] "Breaking the absorption limit of Si towards SWIR wavelength range via strain engineering"
A. K. Katiyar, K. Y. Thai, W. S. Yun, J. D. Lee, and J.-H. Ahn*
Sci. Adv. 6, eabb0576 (2020). [IF: 11.7] {66}
[11] "Giant Rashba-type splitting in molybdenum-driven bands of MoS2/Bi(111) heterostructure"
K. Lee†, W. S. Yun†, and J. D. Lee*
Phys. Rev. B 91, 125420 (2015). (†equal contribution) [IF: 3.2] {57}
[12] "Bandgap expansion in the surface-localized electronic structure of MoS2 (0002)"
S. W. Han, G.-B. Cha, E. Frantzeskakis, I. Razado-Colambo, J. Avila, Y. S. Park, D. Kim, J. Hwang, J. S. Kang, S. Ryu, W. S. Yun, S. C. Hong*, and M. C. Asensio*
Phys. Rev. B 86, 115105 (2012). [IF: 3.2] {51}
[13] "Effect of interlayer interaction on exciton luminescence in atomic-layered MoS2 crystals"
J. G. Kim, W. S. Yun, S. Jo, J. D. Lee*, and C.-H. Cho*
Sci. Rep. 6, 29813 (2016). [IF: 3.8] {41}
[14] "Two-dimensional semiconductors ZrNCl and HfNCl: Stability, electric transport, and thermoelectric properties"
W. S. Yun and J. D. Lee*
Sci. Rep. 7, 17330 (2017). [IF: 3.8] {39}
[15] "Multilayer WSe2/MoS2 Heterojunction Phototransistors through Periodically Arrayed Nanopore Structures for Bandgap Engineering"
M.-H. Jeong, H.-S. Ra, S.-H. Lee, D.-H. Kwak, J. Ahn, W. S. Yun, J. D. Lee, W.-S. Chae, D. K. Hwang*, and J.-S. Lee*
Adv. Mater. 34, 2108412 (2022). [IF: 27.4] {35}
[16] "Hydrogenation-induced atomic stripes on the 2H-MoS2 surface"
S. W. Han†, W. S. Yun†, J. D. Lee*, Y. H. Hwang, J. Baik, H. J. Shin, W. G. Lee, Y. S. Park*, and K. S. Kim
Phys. Rev. B (Rapid Commun.) 92, 241303(R) (2015). (†equal contribution) [IF: 3.2] {35}
[17] "A first-principles study of magnetostriction of Fe3O4 and CoFe2O4"
D. Odkhuu, P. Taivansaikhan, W. S. Yun, and S. C. Hong*
J. Appl. Phys. 115, 17A916 (2014). [IF: 2.7] {31}
[18] "Hydrogen diffusion and its electrical properties variation as a function of the IGZO stacking structure"
H. Y. Noh, W.-G. Lee, G. R. Haripriya, J.-H. Cha, J.-S. Kim, W. S. Yun, M.-J. Lee, and H.-J. Lee*
Sci. Rep. 12, 19816 (2022). [IF: 3.8] {30}
[19] "Transient SHG Imaging on Ultrafast Carrier Dynamics of MoS2 Nanosheet"
H. Jang, K. Dharkal, K.-I. Joo, W. S. Yun, S. M. Shinde, X. Chen, S. M. Jeong, S. W. Lee, Z. Lee, J. D. Lee, J.-H. Ahn*, and H. Kim*
Adv. Mater. 30, 1705190 (2018). [IF: 27.4] {28}
[20] "Giant magnetostriction of Fe1-xBex alloy: A first principles study"
S. C. Hong*, W. S. Yun, and R. Wu*
Phys. Rev. B 79, 054419 (2009). [IF: 3.2] {28}
[21] "Exploring a Novel Atomic Layer with Extremely Low Lattice Thermal Conductivity: ZnPSe3 and Its Thermoelectrics"
W. S. Yun and J. D. Lee*
J. Phys. Chem. C 122, 27917−27924 (2018). [IF: 3.3] {25}
[22] "Interface Defect Engineering of a Large-Scale CVD-Grown MoS2 Monolayer via Residual Sodium at the SiO2/Si Substrate"
S. W. Han†,*, W. S. Yun†, W. J. Woo, H. Kim, J. Park, Y. H. Hwang, T. K. Nguyen, C. T. Le, Y. S. Kim, M. Kang, C. W. Ahn, and S. C. Hong*
Adv. Mater. Interfaces 8, 2100428 (2021). (†equal contribution) [IF: 5.4] {24}
[23] "Optical Absorption of Armchair MoS2 Nanoribbons: Enhanced Correlation Effects in the Reduced Dimension"
J. Kim†, W. S. Yun†, and J. D. Lee*
J. Phys. Chem. C 119, 13901−13906 (2015). (†equal contribution) [IF: 3.3] {21}
[24] "Single-layer CdPSe3: A promising thermoelectric material persisting in high temperatures"
W. S. Yun and J. D. Lee*
Appl. Phys. Lett. 115, 193105 (2019). [IF: 3.5] {20}
[25] "Rectifying the Optical-Field-Induced Current in Dielectrics: Petahertz Diode"
J. D. Lee*, W. S. Yun, and N. Park
Phys. Rev. Lett. 116, 057401 (2016). [IF: 8.1] {20}
[26] "Measurement of Exciton and Trion Energies in Multi-Stacked hBN/WS2 Coupled Quantum Wells for Resonant Tunneling Diodes"
M.-J. Lee*, D. H. Seo, S. M. Kwon, D. Kim, Y. Kim, W. S. Yun, J.-H. Cha, H.-K. Song, S. Lee, M. K. Jung, H.-J. Lee, J.-S. Kim, J.-S. Heo, S. Seo, and S. K. Park*
ACS Nano 14, 16114−16121 (2020). [IF: 15.8] {18}
[27] "Theory of perpendicular magnetocrystalline anisotropy in Fe/MgO (001)"
D. Odkhuu, W. S. Yun, S. H. Rhim*, and S. C. Hong*
J. Magn. Magn. Mater. 414, 126−131 (2016). [IF: 2.5] {18} See also: arXiv:1507.06799v1.
[28] "Strong perpendicular magnetocrystalline anisotropy of bulk and the (001) surface of DO22 Mn3Ga: A density functional study"
W. S. Yun, G.-B. Cha, I. G. Kim, S. H. Rhim*, and S. C. Hong*
J. Phys.: Condens. Matter 24, 416003 (2012). [IF: 2.3] {18}
[29] "New Method to Determine the Schottky Barrier in Few-Layer Black Phosphorus Metal Contacts"
S. Y. Lee†, W. S. Yun†, and J. D. Lee*
ACS Appl. Mater. Interfaces 9, 7873−7877 (2017). (†equal contribution) [IF: 8.3] {17}
[30] "Engineering of magnetostriction in Fe3Pt1-xIrx by controlling Ir concentration"
D. Odkhuu, W. S. Yun, S. H. Rhim, and S. C. Hong*
Appl. Phys. Lett. 98, 152502 (2011). [IF: 3.5] {16}
[31] "Thickness-Dependent Phonon Renormalization and Enhanced Raman Scattering in Ultrathin Silicon Nanomembranes"
S. Lee, K. Kim, K. P. Dhakal, H. Kim, W. S. Yun, J. D. Lee, H. Cheong*, and J.-H. Ahn*
Nano Lett. 17, 7744−7750 (2017). [IF: 9.6] {15}
[32] "Hole doping effect of MoS2 via electron capture of He+ ion irradiation"
S. W. Han†,*, W. S. Yun†, H. Kim, Y. Kim, D.-H. Kim, C. W. Ahn, and S. Ryu
Sci. Rep. 11, 23590 (2021). (†equal contribution) [IF: 3.8] {14}
[33] "Magnetocrystalline anisotropy energy and spin polarization of Fe3Si in bulk and on Si(001) and Si(111) substrates"
D. Odkhuu, W. S. Yun, and S. C. Hong*
Thin Solid Films 519, 8218−8222 (2011). [IF: 2.0] {14}
[34] "Large electrostrictive response via tailoring ergodic relaxor state in Bi1/2Na1/2TiO3-based ceramics with Bi(Mn1/2Ce1/2)O3 end-member"
N. U. Khan†, W. S. Yun†, A. Ullah*, S. Ali, M. Sheeraz, A. Ullah, I. W. Kim, and C. W. Ahn*
Ceram. Int. 50, 8790−8799 (2024). (†equal contribution) [IF: 5.1] {11}
[35] "Magnetocrystalline Anisotropy of Zinc-Blende CrTe (001) Surface: A First-Principles Study"
W. S. Yun, D. Odkhuu, S. C. Hong*, and J. I. Lee
Thin Solid Films 519, 8355−8358 (2011). [IF: 2.0] {11}
[36] "Graphene-mediated coherent light lasing from CsPbI3 perovskite nanorods"
J.-H. Kim, Q. V. Le, T. P. Nguyen, T. H. Lee, H. W. Jang, W. S. Yun, S. M. Jeong, J. D. Lee, S. Y. Kim*, H. Kim*
Nano Energy 70, 104497 (2020). [IF: 16.8] {10}
[37] "Half-Metallicity and Magnetism of Zinc-Blende Cr-Chalcogenide(001) Surfaces: Density Functional Study"
W. S. Yun and S. C. Hong*
J. Korean Phys. Soc. 53, 384−387 (2008). [IF: 0.8] {10}
[38] "Half-metallic ferromagnetism of (CrP)1/(GaP)1 superlattice: A first-principles study"
W. S. Yun, J. Choi, S. Cho, and S. C. Hong*
J. Magn. Magn. Mater. 310, 2138−2140 (2007). [IF: 2.5] {10}
[39] "Mapping the low tolerance factor Bi(Li1/3Zr2/3)O3 end member and MPB composition nexus in Bi1/2Na1/2TiO3-based ceramics"
S. Ali, M. Sheeraz, A. Ullah*, W. S. Yun, A. Ullah, I. W. Kim, and C. W. Ahn*
Chem. Eng. J. 485, 150087 (2024). [IF: 13.3] {9}
[40] "Magnetocrystalline anisotropy of pure magnetic semiconductors of MnGeP2 and MnGeAs2: A first-principles study"
G.-B. Cha*, W. S. Yun*, and S. C. Hong*
J. Magn. Magn. Mater. 419, 202−209 (2016). (*co-corresponding author) [IF: 2.5] {8}
[41] "Topological band order transition and quantum spin Hall edge engineering in functionalized X-Bi(111) (X = Ga, Bi, and Tl) bilayer"
Y. Kim, W. S. Yun, and J. D. Lee*
Sci. Rep. 6, 33395 (2016). [IF: 3.8] {8}
[42] "Hidden Direct Bandgap of Bi2O2Se by Se Vacancy and Enhanced Direct Bandgap of Bismuth Oxide Overlayer"
S. W. Han†,*, W. S. Yun†, S. Seong, Z. Tahir, Y. S. Kim, M. Ko, S. Ryu, J.-S. Bae, C. W. Ahn, and J. Kang
J. Phys. Chem. Lett. 15, 1590−1595 (2024). (†equal contribution) [IF: 4.8] {7}
[43] "Schottky barrier tuning of the single-layer MoS2 on magnetic metal substrates through vacancy defects and hydrogenation"
W. S. Yun and J. D. Lee*
Phys. Chem. Chem. Phys. 18, 31027−31032 (2016). [IF: 2.9] {7}
[44] "Magnetism and Magnetocrystalline Anisotropy at fcc Fe (001) Surface"
W. S. Yun, G.-B. Cha, and S. C. Hong*
J. Magn. 13, 144−148 (2008). [IF: 0.6] {7}
[45] "Ultrafast above-transition-temperature resurrection of spin density wave driven by coherent phonon generation in BaFe2As2"
J. D. Lee*, W. S. Yun*, and S. C. Hong
New J. Phys. 16, 043010 (2014). (*co-corresponding author) [IF: 2.8] {6}
[46] "The trapping of N2 molecules and the reduction in its bonding length in Ge(001) due to N2+ ion implantation"
Y. M. Lee†, W. S. Yun†, S. C. Hong*, and M.-C. Jung*
J. Appl. Phys. 109, 124316 (2011). (†equal contribution) [IF: 2.7] {6}
[47] "Electron mediated/enhanced ferromagnetism in a hydrogen-annealed Mn:Ge magnetic semiconductor"
D. D. Dung, W. S. Yun, Y. Hwang, W. Feng, S. C. Hong, and S. Cho*
J. Appl. Phys. 109, 063912 (2011). [IF: 2.7] {6}
[48] "Half-Metallicity of (MnSb)1/(GaSb)n (n = 1, 3, 5, and 7) Digital Alloys: First-Principles Calculations"
W. S. Yun, J. Choi, G.-B. Cha, S. Cho, and S. C. Hong*
J. Korean Phys. Soc. 49, 1020−1023 (2006). [IF: 0.8] {6}
[49] "First-principles calculations on electronic structure and magnetism of β-Mn"
W. S. Yun, G.-B. Cha, S. Cho, and S. C. Hong*
J. Magn. Magn. Mater. 304, e477−e479 (2006). [2.5] {5}
[50] "Phase transition of a MoS2 monolayer through top layer desulfurization by He+ ion irradiation"
S. W. Han*, W. S. Yun, M. Kang, S. Lee, and J. Park
J. Appl. Phys. 131, 224301 (2022). [IF: 2.7] {4}
[51] "A ruthenium complex as a single-component redox shuttle for electrochemical photovoltaics"
J. Y. Kim, W. S. Yun, H.-J. Son, J. D. Lee, and N. C. Jeong*
Chem. Commun. 51, 7745−7748 (2015). [IF: 4.3] {4}
[52] "Electronic origin of the negligible magnetostriction of an electric steel Fe1-xSix alloy: A density-functional study"
D. Odkhuu, W. S. Yun, and S. C. Hong*
J. Appl. Phys. 111, 063911 (2012). [IF: 2.7] {4}
[53] "Thermoelectric performance of novel single-layer ZrTeSe4"
W. S. Yun, H.-J. Lee, J.-S. Kim, M.-J. Lee*, and S. W. Han*
Phys. Chem. Chem. Phys. 24, 28250−28256 (2022). [IF: 2.9] {3}
[54] "Thermally driven homonuclear-stacking phase of MoS2 through desulfurization"
Y. H. Hwang†, W. S. Yun†, G.-B. Cha, S. C. Hong*, and S. W. Han*
Nanoscale 11, 11138−11144 (2019). (†equal contribution) [IF: 5.8] {3}
[55] "Magnetism of Co Layers Grown on a W(001) Surface: Density Functional Study"
W. S. Yun, S. C. Hong*, J. I. Lee, and C. Hwang
J. Korean Phys. Soc. 56, 1472−1477 (2010). [IF: 0.8] {3}
[56] "Strain-induced dark exciton generation in rippled monolayer MoS2"
S. Y. Lee†, W. S. Yun†, and J. D. Lee*
Phys. Chem. Chem. Phys. 25, 9894−9900 (2023). (†equal contribution) [IF: 2.9] {2}
[57] "The electronic structure and magnetism of GdSi2 by first-principles study"
W. S. Yun, G.-B. Cha, and S. C. Hong*
J. Magn. Magn. Mater. 304, e31−e33 (2006). [IF: 2.5] {2}
[59] "A promising high temperature 2D thermoelectric material: novel single-layer ZrHfS4"
W. S. Yun, S. W. Han*, H.-J. Lee, J.-S. Kim, and M.-J. Lee*
Phys. Chem. Chem. Phys. 26, 26330−26336 (2024). [IF: 2.9] {1}
[58] "Twist-Induced Dimensional Crossover and Topological Phase Transitions in Bismuthene Quasicrystals"
S. W. Han†,*, W. S. Yun†, G-.B. Cha, S. Seong, J. C. Kim, H. Y. Jeong*, C. W. Ahn, K. Fukutani, R. Stania, and J. Kang
Chem. Mater. 37, 2358−2366 (2025). (†equal contribution) [IF: 7.2] {0}
[60] "Parasitic Current Induced by Gate Overlap in Thin-Film Transistor"
H.-J. Lee*, K. Abe, J.-S. Kim, W. S. Yun, and M.-J. Lee
Materials 14, 2299 (2021). [IF: 3.1] {0}