Citing Articles

2012 {16}

· Emilio Scalise, Michel Houssa, Geoffrey Pourtois, Valery Afanas'ev, and André Stesmans, "Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2", Nano Research 5, 43-48 (2012).

· Won Seok Yun, S. W. Han, Soon Cheol Hong, In Gee Kim, and J. D. Lee, "Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2 semiconductors (M = Mo, W; X = S, Se, Te)", Phys. Rev. B 85, 033305 (2012).

· Qu Yue, Shengli Chang, Jun Kang, Xueao Zhang, Zhengzheng Shao, Shiqiao Qin, and Jingbo Li, "Bandgap tuning in armchair MoS2 nanoribbon", J. Phys.: Condens. Matter 24, 335501 (2012).

· Hee Sung Lee, Sung-Wook Min, Youn-Gyung Chang, Min Kyu Park, Taewook Nam, Hyungjun Kim, Jae Hoon Kim, Sunmin Ryu, and Seongil Im, "MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap", Nano Lett. 12, 3695-3700 (2012).

· Rui Wang, Brian A. Ruzicka, Nardeep Kumar, Matthew Z. Bellus, Hsin-Ying Chiu, and Hui Zhao, " Ultrafast and spatially resolved studies of charge carriers in atomically thin molybdenum disulfide", Phys. Rev. B 86, 045406 (2012).

· Xiaojun Wu, Wanlin Guo, and Xiao Cheng Zeng, "Strain-Dependent Electronic and Magnetic Properties of MoS2 Monolayer, Bilayer, Nanoribbon and Nanotubes", Phys. Chem. Chem. Phys. 14, 13035-13040 (2012).

· Kristen Kaasbjerg, Kristian S. Thygesen, and Karsten W. Jacobsen, "Phonon-limited mobility in n-type single-layer MoS2 from first principles", Phys. Rev. B 85, 115317 (2012).

· Kapildeb Dolui, Chaitanya Das Pemmaraju, and Stefano Sanvito, "Electric Field Effects on Armchair MoS2 Nanoribbons", ACS Nano 6, 4823-4834 (2012).

· Sunkook Kim, Aniruddha Konar, Wan-Sik Hwang, Jong Hak Lee, Jiyoul Lee, Jaehyun Yang, Changhoon Jung, Hyoungsub Kim, Ji-Beom Yoo, Jae-Young Choi, Yong Wan Jin, Sang Yoon Lee, Debdeep Jena, Woong Choi and Kinam Kim, "High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals", Nature Communications 3, 1011 (2012).

· Swastibrata Bhattacharyya and Abhishek K. Singh, "Semiconductor-metal transition in semiconducting bilayer sheets of transition-metal dichalcogenides", Phys. Rev. B 86, 075454 (2012).

· Alexander L. Ivanovskii, "Graphene-based and graphene-like materials", Russ. Chem. Rev. 81, 571 (2012).

· Sang Wook Han, Gi-Beom Cha, Emmanouil Frantzeskakis, Ivy Razado-Colambo, José Avila, Yong S. Park, Daehyun Kim, Jihoon Hwang, Jeong Soo Kang, Sunmin Ryu, Won Seok Yun, Soon Cheol Hong, and Maria C. Asensio, "Bandgap expansion in the surface-localized electronic structure of MoS2 (0002)", Phys. Rev. B. 86, 115105 (2012).

· G. Plechinger, S. Heydrich, M. Hirmer, F.-X. Schrettenbrunner, D. Weiss, J. Eroms, C. Schuller, and T. Korn, "Scanning Raman spectroscopy of few- and single-layer MoS2 flakes", Proc. SPIE 8463, Nanoengineering: Fabrication, Properties, Optics, and Devices IX, 84630N (October 15, 2012); DOI:10.1117/12.928068.

· Hee Sung Lee, Sung-Wook Min, Min Kyu Park, Young Tack Lee, Pyo Jin Jeon, Jae Hoon Kim, Sunmin Ryu, and Seongil Im, "MoS2 Nanosheets for Top-Gate Nonvolatile Memory Transistor Channel", Small 8, 3111-3115 (2012).

· Hannu-Pekka Komsa and Arkady V. Krasheninnikov, "Effects of confinement and environment on the electronic structure and exciton binding energy of MoS2 from first principles", Phys. Rev. B 86, 241201(R) (2012).

· N. Singh, G. Jabbour, and U. Schwingenschlögl, "Optical and photocatalytic properties of two-dimensional MoS2", Eur. Phys. J. B 85, 392 (2012).

2013 {26}

· Huaihong Guo, Teng Yang, Peng Tao, Yong Wang, and Zhidong Zhang, "High pressure effect on structure, electronic structure, and thermoelectric properties of MoS2", J. Appl. Phys. 113, 013709 (2013). See also: arXiv:1208.5941v1.

· Sung-Wook Min, Hee Sung Lee, Hyoung Joon Choi, Min Kyu Park, Taewook Nam, Hyungjun Kim, Sunmin Ryu, and Seongil Im, "Nanosheet thickness-modulated MoS2 dielectric property evidenced by field-effect transistor performance", Nanoscale 5, 548-551 (2013).

· Saptarshi Das, Hong-Yan Chen, Ashish Verma Penumatcha, and Joerg Appenzeller, "High Performance Multilayer MoS2 Transistors with Scandium Contacts", Nano Lett. 13, 100-105 (2013).

· Huaihong Guo, Teng Yang, Peng Tao, and Zhidong Zhang, "Doping effect on thermoelectric properties of MoS2", arXiv:1212.3394 (2013).

· Wenzhong Bao, Xinghan Cai, Dohun Kim, Karthik Sridhara, and Michael S. Fuhrer, "High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects", Appl. Phys. Lett. 102, 042104 (2013). See also: arXiv:1212.6292.

· Alpa Dashora, Ushma Ahuja, and K. Venugopalan, "Electronic and optical properties of MoS2 (0001) thin films: Feasibility for solar cells", Comput. Mater. Sci. 69, 216-221 (2013).

· Wei Chen, Elton J.G. Santos, Wenguang Zhu, Efthimios Kaxiras, and Zhenyu Zhang, "Tuning the Electronic and Chemical Properties of Monolayer MoS2 Adsorbed on Transition Metal Substrates", Nano Lett. 13, 509-514 (2013).

· Xiao Li, Fan Zhang, and Qian Niu, "Unconventional Quantum Hall Effect and Tunable Spin Hall Effect in Dirac Materials: Application to an Isolated MoS2 Trilayer", Phys. Rev. Lett. 110, 066803 (2013). See also: arXiv:1207.1205v1.

· S. Horzum, H. Sahin, S. Cahangirov, P. Cudazzo, A. Rubio, T. Serin, and F. M. Peeters, "Phonon Softening and Direct to Indirect Bandgap Crossover in Strained Single Layer MoSe2", Phys. Rev. B 87, 125415 (2013). See also: arXiv:1302.6635v1.

· Liang Huang, Yifei Yu, Chun Li, and Linyou Cao, "Substrate Mediation in Vapor Deposition Growth of Layered Chalcogenide Nanoplates: A Case Study of SnSe2", J. Phys. Chem. C 117, 6469-6475 (2013).

· Saptarshi Das and Joerg Appenzeller, "Screening and interlayer coupling in multilayer MoS2", Phys. Status Solidi RRL 7, 268-273 (2013).

· Kapildeb Dolui, Ivan Rungger, and Stefano Sanvito, "Origin of the n-type and p-type conductivity of MoS2 monolayers on a SiO2 substrate", Phys. Rev. B 87, 165402 (2013). See also: arXiv:1301.2491v1.

· H. Sahin, S. Tongay, S. Horzum, W. Fan, J. Zhou, J. Li, J. Wu,and F. M. Peeters, "Anomalous Raman Spectra and Thickness Dependent Electronic properties of WSe2", Phys. Rev. B 87, 165409 (2013). See also: arXiv:1303.5861v1.

· Ashok Kumar and P. K. Ahluwalia, "Mechanical strain dependent electric and dielectric properties of two-dimentional honeycomb structures of MoX2 (X=S, Se, Te)", Physica B 419, 66-75 (2013).

· Jiwon Chang, Leonard F. Register and Sanjay K. Banerjee, "Atomistic Full-Band Simulations of Monolayer MoS2 Transistors", Appl. Phys. Lett. 103, 223509 (2013). See also: arXiv:1304.2990v1.

· Peng Tang, Jian-Jian Xiao, Chao Zheng, Shi Wang, and Run-Feng Chen, "Graphene-Like Molybdenum Disulfide and Its Application in Optoelectronic Devices", Acta Phys. -Chim. Sin. 29, 667-677 (2013) (written in Chinese).

· Jiwon Chang, Stefano Larentis, Emanuel Tutuc, Leonard F. Register, and Sanjay K. Banerjee, "Atomistic simulation of doping by adatoms in monolayer MoS2", arXiv:1305.7162 (2013).

· C. Espejo, T. Rangel, A. H. Romero, X. Gonze, and G.-M. Rignanese, "Band structure tunability in MoS2 under interlayer compression: A DFT and GW study", Phys. Rev. B 87, 245114 (2013).

· Seongil Im, Youn-Gyoung Chang, Jae Kim, "PECCS Measurements in Nanostructure FETs", Photo-Excited Charge Collection Spectroscopy, Springer Briefs in Physics 2013, pp 83-97.

· Kyungjune Cho, Woanseo Park, Juhun Park, Hyunhak Jeong, Jingon Jang, Tae-Young Kim, Woong-Ki Hong, Seunghun Hong, and Takhee Lee, "Electric Stress-Induced Threshold Voltage Instability of Multilayer MoS2 Field Effect Transistors", ACS Nano 7, 7751-7758 (2013).

· Yungang Zhou, Qiulei Su, Zhiguo Wang, Huiqiu Deng, and Xiaotao Zu, "Controlling Magnetism of MoS2 Sheet by Embedding Transition-metal Atoms and Applying Strain", Phys. Chem. Chem. Phys. 15, 18464-18470 (2013).

· Xuetao Gan, Yuanda Gao, Kin Fai Mak, Xinwen Yao, Ren-Jye Shiue, Arend van der Zande, Matthew Trusheim, Fariba Hatami, Tony F. Heinz, James Hone, and Dirk Englund, "Controlling the Spontaneous Emission Rate of Monolayer MoS2 in a Photonic Crystal Nanocavity",, Appl. Phys. Lett. 103, 181119 (2013). See also: arXiv:1310.0923.

· M. Donarelli, F. Bisti, F. Perrozzi, and L. Ottaviano, "Tunable sulfur desorption in exfoliated MoS2 by means of thermal annealing in ultra-high vacuum", Chem. Phys. Lett. 588, 198-202 (2013).

· Woojin Park, Jin Ho Yang, Chang Goo Kang, Young Gon Lee, Hyeon Jun Hwang, Chunhum Cho, Sung Kwan Lim, Soo Cheol Kang, Woong-Ki Hong, Sang Kyung Lee, "Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE/MoS2 stack", Nanotechnology 24, 475501 (2013).

· Zhaoqiang Bai, Troels Markussen, and Kristian S. Thygesen, "Electron transport across a metal/MoS2 interface: dependence on contact area and binding distance", arXiv:1311.2393v1 (2013).

· Ushma Ahuja and Alpa Dashora, "Electronic and Optical Properties of MoS2", Solid State Phenom. 209, 90-93 (2013).

· D. N. Bhavsara and A. R. Jania, "Studies on Pressure-Dependent Electrical Resistivity of MoSe2-xTex Single Crystals", Mol. Cryst. Liq. Cryst. 587, 121-128 (2013).

2014 {49}

· Guo Huai-Hong, Yang Teng, Tao Peng, and Zhang Zhi-Dong, "Theoretical study of thermoelectric properties of MoS2", Chin. Phys. B 23, 017201 (2014).

· E. Scalisea, M. Houssa, G. Pourtois, V. V. Afanas'ev, and A. Stesmans, "First-principles study of strained 2D MoS2", Physica E 56, 416-421 (2014).

· Ashok Kumar and P. K. Ahluwalia, "Electronic Transport and Dielectric Properties of Low-Dimensional Structures of Layered Transition Metal Dichalcogenides", J. Alloys Compd. 587, 459-467 (2014).

· Achintya Bera and A. K. Sood, "Insights into Vibrational and Electronic Properties of MoS2 Using Raman, Photoluminescence, and Transport Studies", MoS2, edited by Zhiming M. Wang (Springer International Publishing Switzerland, 2014) 209, p. 155-215.

· Horacio Coy Diaz, Rafik Addou, and Matthias Batzill, "Interface properties of CVD grown graphene transferred on to MoS2(0001)", Nanoscale 6, 1071-1078 (2014).

· Rusen Yan, Jeffrey R. Simpson, Simone Bertolazzi, Jacopo Brivio, Michael Watson, Xufei Wu, Andras Kis, Tengfei Luo, Angela R. Hight Walker, and Huili Grace Xing, "Thermal Conductivity of Monolayer Molybdenym Disulfide Obtained from Temperature-Dependent Raman Spectroscopy", ACS Nano 8, 986-993 (2014).

· Xiangying Su, Ruizhi Zhang, Chongfeng Guo, Jiming Zheng, and Zhaoyu Rena, "Band engineering of dichalcogenide MX2 nanosheets (M = Mo, W and X=S, Se) by out-of-plane pressure", Phys. Lett. A 378, 745-749 (2014).

· Pingli Qin, Guojia Fang, Weijun Ke, Fei Cheng, Qiao Zheng, Jiawei Wan, Hongwei Lei, and Xingzhong Zhao, "In situ growth of double-layer MoO3/MoS2 film from MoS2 for hole-transport layers in organic solar cell", J. Mater. Chem. A 2, 2742-2756 (2014).

· Weifeng Li, Gang Zhang, Meng Guo, and Yong-Wei Zhang, "Strain-tunable electronic and transport properties of MoS2 nanotubes", Nano Research 7, 1-10 (2014).

· Santosh KC, Roberto C. Longo, Robert M. Wallace, and Kyeongjae Cho, "Electronic Properties of MoS2/HfO2 Interface: Impact of Interfacial Impurities during Atomic Layer Deposition Growth", arXiv:1402.0457v2 (2014).

· Jia-He Fan, Po Gao, An-Min Zhang, Bai-Ren Zhu, Hua-Ling Zeng, Xiao-Dong Cui, Rui He, and Qing-Ming Zhang, "Resonance Raman scattering in bulk 2H-MX2 (M = Mo, W; X = S, Se) and monolayer MoS2", J. Appl. Phys. 115, 053527 (2014).

· Jiangang He, Kerstin Hummer, and Cesare Franchini, "Stacking effects on the electronic and optical properties of bilayer transition metal dichalcogenides MoS2, MoSe2, WS2, and WSe2", Phys. Rev. B 89, 075409 (2014).

· Pingli Qin, Guojia Fang, Fei Cheng, Weijun Ke, Hongwei Lei, Haoning Wang, and Xingzhong Zhao, "Sulfur-Doped Molybdenum Oxide Anode Interface Layer for Organic Solar Cell Application", ACS Appl. Mater. Interfaces 6, 2963-2973 (2014).

· Jiwon Chang, Leonard F. Register, Sanjay K. Banerjee, "Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors", J. Appl. Phys. 115, 084506 (2014). See also: arXiv:1402.3309v1.

· Fangping Ouyang, Zhixiong Yang, Xiang Ni, Nannan Wu, Yu Chen, and Xiang Xiong, "Hydrogenation-induced edge magnetization in armchair MoS2 nanoribbon and electric field effects", Appl. Phys. Lett. 104, 071901 (2014).

· Kyungjune Cho, Tae-Young Kim, Woanseo Park, Juhun Park, Dongku Kim, Jingon Jang, Hyunhak Jeong, Seunghun Hong, and Takhee Lee, "Gate-bias stress-dependent photoconductive characteristics of multi-layer MoS2 field-effect transistors ", Nanotechnology 25, 155201 (2014).

· Tae-Young Kim, Kyungjune Cho, Woanseo Park, Juhun Park, Younggul Song, Seunghun Hong, Woong-Ki Hong, and Takhee Lee, "Irradiation Effects of High-Energy Proton Beams on MoS2 Field Effect Transistors", ACS Nano 8, 2774-2781 (2014).

· Nan Feng, Wen-Bo Mi, Yingchun Cheng, Zaibing Guo, Udo Schwingenschlögl, and Hai-Li Bai, "Magnetism by Interfacial Hybridization and p-type Doping of MoS2 in Fe4N/MoS2 Superlattices: A First Principles Study", ACS Appl. Mater. Interfaces 6, 4587-4594 (2014).

· Nils Scheuschner, Oliver Ochedowski, Anne-Marie Kaulitz, Roland Gillen, Marika Schleberger, and Janina Maultzsch, "Photoluminescence of freestanding single- and few-layer MoS2", Phys. Rev. B 89, 125406 (2014). See also: arXiv:1311.5824v1.

· Nardeep Kumar, Qiannan Cui, Frank Ceballos, Dawei He, Yongsheng Wang, and Hui Zhao, "Exciton-exciton annihilation in MoSe2 monolayers", Phys. Rev. B 89, 125427 (2014).

· Won Seok Yun and J. D. Lee, "Unexpected strong magnetism of Cu doped single-layer MoS2 and its origin", Phys. Chem. Chem. Phys. 16, 8990-8996 (2014).

· J. Renteria, R. Samnakay, S. L. Rumyantsev, P. Goli, M. S. Shur, and A. A. Balandin, "Low-Frequency 1/f Noise in Molybdenum Disulfide Transistors: Relative contributions of the channel and contacts", Appl. Phys. Lett. 104, 153104 (2014). See also: arXiv:1312.6868v1.

· S. Horzum, D. Cakir, J. Suh, S. Tongay, Y.-S. Huang, C.-H. Ho, J. Wu, H. Sahin, and F. M. Peeters, "Formation and stability of point defects in monolayer rhenium disulfide", Phys. Rev. B 89, 155433 (2014).

· Z. Y. Zhang, M. S. Si, Y. H. Wang, X. P. Gao, Dongchul Sung, Suklyun Hong and Junjie He, "Indirect-direct band gap transition through electric tuning in bilayer MoS2", J. Chem. Phys. 140, 174707 (2014).

· Wen Huang, Xin Luo, Chee Kwan Gan, Su Ying Quek, and Gengchiau Liang, "Theoretical study of thermoelectric properties of few-layer MoS2 and WSe2", Phys. Chem. Chem. Phys. 16, 10866-10874 (2014).

· Weifeng Li, Meng Guo, Gang Zhang, and Yong-Wei Zhang, "Gapless MoS2 allotrope possessing both massless Dirac and heavy fermions", Phys. Rev. B 89, 205402 (2014). See also: arXiv:1401.7721v1.

· Woanseo Park, Jaeyoon Baik, Tae-Young Kim, Kyungjune Cho, Woong-Ki Hong, Hyun-Joon Shin, and Takhee Lee, "Photoelectron Spectroscopic Imaging and Device Applications of Large-Area Patternable Single-Layer MoS2 Synthesized by Chemical Vapor Deposition", ACS Nano 8, 4961-4968 (2014).

· Seyed Hossein Hosseini Shokouh, Atiye Pezeshki, Syed Raza Ali Raza, Kyunghee Choi , Sung-Wook Min, Pyo Jin Jeon, Hee Sung Lee, and Seongil Im, "Molybdenum Disulfide Nanoflake-Zinc Oxide Nanowire Hybrid Photoinverter", ACS Nano 8, 5174-5181 (2014).

· Changqing Wang, Haisheng Li, Yongsheng Zhang, Qiang Sun, and Yu Jia, "Effect of Strain on Atomic-scale Friction in Layered MoS2", Tribol. Int. 77, 211-217 (2014).

· Junhong Na, Minju Shin, Min-Kyu Joo, Junghwan Huh, Yun Jeong Kim, Hyung Jong Choi, Joon Hyung Shim, and Gyu-Tae Kim, "Separation of interlayer resistance in multilayer MoS2 field-effect transistors", Appl. Phys. Lett. 104, 233502 (2014).

· A. Garcia, A. M. Raya, M. M. Mariscal, R. Esparza, M. Herrera, S. I. Molina, G. Scavello, P. L. Galindo, M. Jose-Yacaman, and A. Ponce, "Analysis of electron beam damage of exfoliated MoS2 sheets and quantitative HAADF-STEM imaging", Ultramicroscopy 146, 33-38 (2014).

· Chih-Jen Shih, Qing Hua Wang, Youngwoo Son, Zhong Jin, Daniel Blankschtein, and Michael S. Strano, "Tuning On-Off Current Ratio and Field Effect Mobility in a MoS2-Graphene Heterostructure via Schottky Barrier Modulation", ACS Nano 8, 5790-5798 (2014).

· Rui Mao, Buoung Don Kong, and Ki Wook Kim, "Thermal transport properties of metal/MoS2 interfaces from first principles", J. Appl. Phys. 106, 034302 (2014). See also: arXiv:1407.2335v1.

· Yung-Chang Lin, Dumitru O. Dumcenco, Hannu-Pekka Komsa, Yoshiko Niimi, Arkady V. Krasheninnikov, Ying-Sheng Huang, and Kazu Suenaga, "Properties of Individual Dopant Atoms in Single-Layer MoS2: Atomic Structure, Migration, and Enhanced Reactivity", Adv. Mater. 26, 2857-2861 (2014). See also: arXiv:1310.2366.

· Ushma Ahuja, Alpa Dashora, Harpal Tiwari, Dushyant C. Kothari, and K. Venugopalan, "Electronic and optical properties of MoS2-WS2 multi-layers: First principles study", Comput. Mater. Sci. 92, 451-456 (2014).

· Weiyi Wang, Yanwen Liu, Lei Tang, Yibo Jin, Tongtong Zhao, and Faxian Xiu, "Controllable Schottky Barriers between MoS2 and Permalloy", Sci. Rep. 4, 6928 (2014). See also: arXiv:1407.7652v1.

· Bai Sun, Qi Ling Li, and Peng Chen, "Room-temperature ferromagnetism of single-crystalline MoS2 nanowires", Micro Nano Lett. 9, 468-470 (2014).

· S. Appel, A. Volman, L. Houben, Y. Gelbstein, and M. Bar Sadan, "Orienting MoS2 flakes into ordered films", J. Mater. Sci. 49, 7353-7359 (2014).

· Sheng Sun, Heng Zuo, and Tong-Yi Zhang, "Joint first-principles/continuum calculations of electromechanical properties of MoS2 monolayer", Appl. Phys. Lett. 105, 061910 (2014).

· Li-ping Feng, Jie Su, Shuai Chen, and Zheng-tang Liu, "First-principles investigations on vacancy formation and electronic structures of monolayer MoS2 flakes into ordered films", Mater. Chem. Phys. 148, 5-9 (2014).

· A. Pezeshki, S. H. Hosseini Shokouh, S. R. A. Raza, J. S. Kim, S.-W. Min, I. Shackery, S. C. Jun, and S. Im, "Top and Back Gate Molybdenum Disulfide Transistors Coupled for Logic and Photo Inverter Operation", J. Mater. Chem. C 2, 8023-8028 (2014).

· Sumeet Walia, Hussein Nili, Sivacarendran Balendhran, Dattatray J. Late, Kourosh Kalantar-zadeh, Sharath Sriram, and Madhu Bhaskaran, "In situ characterisation of nanoscale electromechanical properties of quasi-two-dimensional MoS2 and MoO3", arXiv:1409.4949v1 (2014).

· Swastibrata Bhattacharyya, Tribhuwan Pandey, and Abhishek K. Singh, "Effect of strain on electronic and thermoelectric properties of few layers to bulk MoS2", Nanotechnology 25, 465701 (2014). See also: arXiv:1407.7522v1.

· Hai Ning Cao, Zhi Ya Zhang, Ming Su Si, Feng Zhang, and Yu Hua Wang, "Indirect-Direct Band Gap Transition by Van Der Waals Interaction Engineering in MoS2/WS2 Bilayer Heterojunction", Appl. Mech. Mater. 614, 70-74 (2014).

· Wei-bin Xu, Bao-jun Huang, Ping Li, Feng Li, Chang-wen Zhang, and Pei-ji Wang, "The electronic structure and optical properties of Mn and B, C, N co-doped MoS2 monolayers", Nanoscale Res. Lett. 9, 554 (2014).

· Yucheng Huang, Chongyi Ling, Hai Liu, and Sufan Wang, "Tuning electronic and magnetic properties of SnSe2 armchair nanoribbons via edge hydrogenation", J. Mater. Chem. C 2, 10175-10183 (2014).

· Ha-Jun Sung, Duk-Hyun Choe, and K J Chang, "The effects of surface polarity and dangling bonds on the electronic properties of monolayer and bilayer MoS2 on α-quartz", New J. Phys. 16, 113055 (2014).

· Chongyi Ling, Yucheng Huang, Hai Liu, Sufan Wang, Zhen Fang, and Lixin Ning, "Mechanical Properties, Electronic Structures and Potential Applications in Lithium Ion Batteries: A First-Principles Study towards SnSe2 Nanotubes", J. Phys. Chem. C 118, 28291-28298 (2014).

· M. F. Khan, M. W. Iqbal, M. Z. Iqbal, M. A. Shehzad, Y. Seo, and Jonghwa Eom, "Photocurrent response of MoS2 field-effect transistor by deep ultraviolet light in atmospheric and N2 gas environments", ACS Appl. Mater. Interfaces 6, 21645-21651 (2014).

2015 {35}

· R. Samnakay, C. Jiang, S. L. Rumyantsev, M. S. Shur, and A. A. Balandin, "Selective chemical vapor sensing with few-layer MoS2 thin-film transistors: Comparison with graphene devices", Appl. Phys. Lett. 106, 023115 (2015). See also: arXiv:1411.5393v1.

· C. Jiang, S. L. Rumyantsev, R. Samnakay, M. S. Shur, and A. A. Balandin, "High-temperature performance of MoS2 Thin-Film transistors: Direct current and pulse current-voltage characteristics", J. Appl. Phys. 117, 064301 (2015). See also: arXiv:1412.6698v1.

· Lijun Zhang and Alex Zunger, "Evolution of Electronic Structure as a Function of Layer Thickness in Group-VIB Transition Metal Dichalcogenides: Emergence of Localization Prototypes", Nano Lett. 15, 949-957 (2015).

· Youngwoo Son, Qing Hua Wang, Joel A. Paulson, Chih-Jen Shih, Ananth G. Rajan, Kevin Tvrdy, Sojin Kim, Bassam Alfeeli, Richard D. Braatz, and Michael S. Strano, "Layer Number Dependence of MoS2 Photoconductivity Using Photocurrent Spectral Atomic Force Microscopic Imaging", ACS Nano 9, 2843-2855 (2015).

· S. Gupta, E. Heintzman, and J. Jasinski, "Multiphonon Raman spectroscopy properties and Raman mapping of 2D van der Waals solids: graphene and beyond", J. Raman Spectros. 46, 217-230 (2015).

· Li-ping Feng, Jie Su, Dapeng li, and Zhengtang Liu, "Tuning the electronic properties of Ti-MoS2 contact through introducing vacancy in monolayer MoS2", Phys. Chem. Chem. Phys. 17, 6700-6704 (2015).

· Manouchehr Hosseini, Mohammad Elahi, Mahdi Pourfath, and David Esseni, "Strain induced mobility modulation in single-layer MoS2", arXiv:1503.01301v1 (2015).

· S. L. Rumyantsev, C. Jiang, R. Samnakay, M. S. Shur, and A. A. Balandin, "Low-Frequency 1/f Noise in MoS2 Thin-Film Transistors: Comparison of Single and Multilayer Structures", arXiv:1503.01823v1 (2015). - This preprint was published in IEEE Electron Device Lett. 36, 517-519 (2015), however the citation was removed.

· Y. F. Zhou, H. M. Xian, B. Wang, Y. J. Yu, Y. D. Weiand J. Wang, "Gate controlled electronic transport in monolayer MoS2 field effect transistor", J. Appl. Phys. 117, 104307 (2015).

· Jiwon Chang, "Simulation of channel orientation dependent transport in ultra-scaled monolayer MoX2 (X = S, Se, Te) n-MOSFETs", J. Phys. D: Appl. Phys. 48, 145101 (2015).

· Ya-ping Miao, Fei Ma, Yu-hong Huang, and Ke-wei Xu, "Strain effects on electronic states and lattice vibration of monolayer MoS2", Physica E 71, 1-7 (2015).

· Aaron J. Bradley, Miguel Moreno Ugeda, Felipe H. da Jornada, Diana Y. Qiu, Wei Ruan, Yi Zhang, Sebastian Wickenburg, Alexander Riss, Jiong Lu, Sung-Kwan Mo, Zahid Hussain, Zhi-Xun Shen, Steven G. Louie, and Michael F. Crommie, "Probing the Role of Interlayer Coupling and Coulomb Interactions on Electronic Structure in Few-Layer MoSe2 Nanostructures", Nano Lett. 15, 2594-2599 (2015).

· Changqing Wang, Weiguang Chen, Yongsheng Zhang, Qiang Sun, and Yu Jia, "Effects of vdW Interaction and Electric Field on Friction in MoS2", Tribol. Lett. 59, 7 (2015).

· Gui-Bin Liu, Di Xiao, Yugui Yao, Xiaodong Xu, and Wang Yao, "Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides", Chem. Soc. Rev. 44, 2643-2663 (2015).

· Hee Sung Lee, Jae Min Shin, Pyo Jin Jeon, Junyeong Lee, Jin Sung Kim, Hyun Chul Hwang, Eunyoung Park, Woojin Yoon, Sang-Yong Ju, and Seongil Im, "Few-layer MoS2-Organic Thin-Film Hybrid Complementary Inverter Pixel Fabricated on a Glass Substrate", Small 11, 2132-2138 (2015).

· W. L. Scopel, R. H. Miwa, T. M. Schmidt, and P. Venezuela, "MoS2 on an amorphous HfO2 surface: An ab initio investigation", J. Appl. Phys. 117, 194303 (2015).

· Carsten Habenicht, Martin Knupfer, and Bernd Büchner, "Investigation of the dispersion and the effective masses of excitons in bulk 2H-MoS2 using transition electron energy-loss spectroscopy", arXiv:1505.06401v1 (2015).

· Wei-bin Xu, Ping Li, Sheng-shi Li, Bao-jun Huang, Chang-wen Zhang, and Pei-ji Wang, "A novel optical property induced by MO, S vacancy and V-doped in monolayer MoS2", Physica E 73, 83-88 (2015).

· Shaista Andleeb, Arun Kumar Singh, and Jonghwa Eom, "Chemical doping of MoS2 multilayer by p-toluene sulfonic acid", Sci. Technol. Adv. Mater. 16, 035009 (2015).

· Jongmin Kim, Won Seok Yun, and J. D. Lee, "Optical Absorption of Armchair MoS2 Nanoribbons: Enhanced Correlation Effects in the Reduced Dimension;", J. Phys. Chem. C 119, 13901-13906 (2015).

· Georgios Papadimitropoulos, Nikolaos Vourdas, A. Kontos, Maria Vasilopoulou, Dimitrios N. Kouvatsos, Nicolas Boukos, Alberto Gasparotto, Davide Barreca, and Dimitrios Davazoglou, "Hot-wire vapor deposition of amorphous MoS2 thin films", Phys. Status Solidi C 12, 969-974 (2015).

· Guan Chee Loh and Ravi Pandey, "Robust magnetic domains in fluorinated ReS2 monolayer", Phys. Chem. Chem. Phys. 17, 18843-18853 (2015).

· Jie Su, Ning Li, Yingying Zhang, Liping Feng, and Zhengtang Liu, "Role of vacancies in tuning the electronic properties of Au-MoS2 contact", AIP Adv. 5, 077182 (2015).

· Xingen Liu and Zhongyao Li, "Electric Field and Strain Effect on Graphene-MoS2 Hybrid Structure: Ab Initio Calculations", J. Phys. Chem. Lett. 6, 3269-3275 (2015).

· Wenhui Wang, Xudong Cui, Erchan Yang, Quanping Fan, and Bin Xiang, "Negative refraction in molybdenum disulfide", Opt. Express 23, 22024-22033 (2015).

· Youwei Zhang, Hui Li, Haomin Wang, Ran Liu, Shili Zhang, and Zhijun Qiu, "On Valence-Band Splitting in Layered MoS2", ACS Nano 9, 8514-8519 (2015).

· Long Zhang, Langhui Wan, Yunjin Yu, Bin Wang, Fuming Xu, Yadong Wei, and Yang Zhao, "Modulation of Electronic Structure of Armchair MoS2 Nanoribbon", J. Phys. Chem. C 119, 22164-22171 (2015).

· Ke Jin, Dameng LIU, and Yu Tian, "Enhancing the interlayer adhesive force in twisted multilayer MoS2 by thermal annealing treatment", Nanotehcnol. 26, 405708 (2015).

· Cheng Fang, Ren Yi, and Sun Jin-Fang, "Transport through a Single Barrier on Monolayer MoS2", Chinese Phys. Lett. 32, 107301 (2015).

· Xuexia He, Fucai Liu, Peng Hu, Wei Fu, Xingli Wang, Qingsheng Zeng, Wu Zhao, and Zheng Liu, "Chemical Vapor Deposition of High-Quality and Atomically Layered ReS2", Small 11, 5423-5429 (2015).

· Zheng Liu, Yung-Chang Lin, Jamie H. Warner, Po-Yuan Teng, Chao-Hui Yeh, Po-Wen Chiu, Sumio Iijima, and Kazu Suenga, "Characterization of Graphene and Transition Metal Dichalcogenide at the Atomic Scale", J. Phys. Soc. Jpn. 84 121005 (2015).

· Ming Xia, Bo Li, Kuibo Yin, Giovanni Capellini, Gang Niu, Yongji Gong, Wu Zhou, Pulickel M Ajayan, and Ya-Hong Xie, "On the Spectroscopic Signatures of AA' and AB Stacking of Chemical Vapor Deposited Bilayer MoS2", ACS Nano 9, 12246-12254 (2015).

· S. H. Rhim, Young Soo Kim, and A. J. Freeman, "Strain-induced giant second-harmonic generation in monolayered 2H-MoX2 (X = S, Se, Te)", Appl. Phys. Lett. 107, 241908 (2015). See also: arXiv:1504.04936v1.

· Sang Wook Han, Won Seok Yun, J. D. Lee, Y. H. Hwang, J. Baik, H. J. Shin, Wang G. Lee, Young S. Park, and Kwang S. Kim, "Hydrogenation-induced atomic stripes on the 2H-MoS2 surface", Phys. Rev. B 92, 241303(R) (2015).

2016 {37}

· Long-Juan Kong, Guang-Hya Liu, and Ling Qiang, "Electronic and optical properties of O-doped monolayer MoS2", Comput. Mater. Sci. 111, 416-423 (2016).

· Junjie Wang, Naoto Umezawa, and Hideo Hosono, "Mixed Valence Tin Oxides as Novel van der Waals Materials: Theoretical Predictions and Potential Applications", Adv. Energy Mater. 6, 1501190 (2016).

· Jennifer DiStefano, Yu-Chuan Lin, Joshua Robinson, Nicholas R. Glavin, Andrey A. Voevodin, Justin Brockman, Markus Kuhn, Benjamin French, and Sean W. King, "Band Alignment at Molybdenum Disulphide/Boron Nitride/Aluminum Oxide Interfaces", J. Electron. Mater. 45, 983-988 (2016).

· Meng Zhang, Zhongjia Huang, Xiao Wang, Hongyu Zhang, Taohai Li, Zhaolong Wu, Youhua Luo, and Wei Cao, "Magnetic MoS2 pizzas and sandwiches with Mnn (n = 1-4) cluster toppings and fillings: A first-principles investigation", Sci. Rep. 6, 19504 (2016).

· Jisook Hong, Changhoon Lee, Jin-Seong Park, and Ji Hoon Shim, "Control of valley degeneracy in MoS2 by layer thickness and electric field and its effect on thermoelectric properties", Phys. Rev. B 93, 035445 (2016). See also: arXiv:1507.01050v1.

· Joongoo Kang, Lijun Zhang, and Su-Huai Wei, "A Unified Understanding of the Thickness-Dependent Bandgap Transition in Hexagonal Two-Dimensional Semiconductors", J. Phys. Chem. Lett. 7, 597-602 (2016).

· Mahmud Abdulsalam and Daniel Joubert, "Structural, electronic and optical properties of TcX2 (X = S, Se, Te) from first principles calculations", Comput. Mater. Sci. 115, 177-183 (2016).

· Choong-Ki Kim, Chan Hak Yu, Jae Hur, Hagyoul Bae, Seung-Bae Jeon, Hamin Park, Yong Min Kim, Kyung Cheol Choi, Yang-Kyu Choi, and Sung-Yool Choi, "Abnormal electrical characteristics of multi-layered MoS2FETs attributed to bulk traps", 2D Mater. 3, 015007 (2016).

· Chuong V. Nguyen and Nguyen N. Hieu, "Effect of biaxial strain and external electric field on electronic properties of MoS2 monolayer: A first-principle study", Chem. Phys. 468, 9-14 (2016).

· C. Gonzalez, B. Biel, and Y. J. Dappe, "Theoretical characterisation of point defects on a MoS2 monolayer by scanning tunnelling microscopy", Nanotechnology 27, 105702 (2016).

· Xiangying Su, Weiwei Ju, Ruizhi Zhang, Chongfeng Guo, Jiming Zheng, Yongliang Yong, and Xiaohong Li, "Bandgap engineering of MoS2/MX2 (MX2 = WS2, MoSe2, WSe2) heterobilayers subjected to biaxial strain and compressive strain", RSC Adv. 6, 18319-18325 (2016).

· Xin-lian Chen, Wei-xiao Ji, Chang-wen Zhang, and Pei-ji Wang, "Novel optical properties of MoS2 on monolayer zinc tellurium substrate", J. Mater. Sci. 51, 4580-4587 (2016).

· Babu Ram, Aaditya Manjanath, and Abhishek K. Singh, "Simultaneous tunability of the electronic and phononic gaps in SnS2 under normal compressive strain", 2D Mater. 3, 015009 (2016). See also: arXiv:1509.05999v1.

· Wei-Jhih Su, Hsuan-Chen Chang, Yi-Ting Shih, Yi-Ping Wang, Hung-Pin Hsu, Ying-Sheng Huang, and Kuei-Yi Lee, "Two dimensional MoS2/graphene p-n heterojunction diode: fabrication and electronic characteristics", J. Alloys Compd. 671, 276-282 (2016).

· Hsiao-Yu Chang, Maruthi Nagavalli Yogeesh, Rudresh Ghosh, Amritesh Rai, Atresh Sanne, Shixuan Yang, Nanshu Lu, Sanjay Kumar Banerjee, and Deji Akinwande, "Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime", Adv. Mater. 28, 1818-1823 (2016).

· N. Arzate, Bernardo S. Mendoza, R. A. Vazquez-Nava, Z. Ibarra-Borja, and M. I. Alvarez-Nunez, "Optical spin injection in MoS2 monolayers", Phys. Rev. B 93, 115433 (2016).

· Guihua Zhou, Jingbo Chang, Haihui Pu, Keying Shi, Shun Mao, Xiaoyu Sui, Ren Ren, Shumao Cui, and Junhong Chen, "Ultrasensitive Mercury Ion Detection Using DNA-functionalized Molybdenum Disulfide Nanosheet/Gold Nanoparticle Hybrid Field-Effect Transistor Device", ACS Sens. 1, 295-302 (2016).

· Biao Liu, Li-Juan Wu, Yu-Qing Zhao, Ling-Zhi Wang, Meng-Qiu Cai, "The interfacial properties of SrRuO3/MoS2 heterojunction: a first-principles study", Eur. Phys. J. B 89, 80 (2016).

· Muhammad Farooq Khan, Ghazanfar Nazir, Volodymyr M. lermolenko, and Jonghwa Eom, "Electrical and photo-electrical properties of MoS2 nanosheets with and without an Al2O3 capping layer under various environmental conditions", Sci. Technol. Adv. Mat. 17, 166-176 (2016).

· Luiz H. G. Tizei, Yung-Chang Lin, Ang-Yu Lu, Lain-Jong Li, and Kazu Suenaga, "Electron energy loss spectroscopy of excitons in two-dimensional-semiconductors as a function of temperature", Appl. Phys. Lett. 108, 163107 (2016).

· Mahmud Abdulsalam and Daniel P. Joubert, "Electronic and optical properties of MX3 (M = Ti, Zr and Hf; X = S, Se) structures: A first principles insight", Phys. Status Solidi B 253, 868-874 (2016).

· Yaokun Pang, Fei Xue, Longfei Wang, Jian Chen, Jianjun Luo, Tao Jiang, Chi Zhang, and Zhong Lin Wang, "Tribotronic Enhanced Photoresponsivity of a MoS2 Phototransistor", Adv. Sci. 3, 1500419 (2016).

· Mathias Gehlmann, Irene Aguilera, Gustav Bihlmayer, Ewa Młyńczak, Markus Eschbach, Sven Döring, Pika Gospodarič, Stefan Cramm, Beata Kardynał, Lukasz Plucinski, Stefan Blügel, and Claus M. Schneider, "Quasi 2D electronic states with high spin-polarization in centrosymmetric MoS2 bulk cyrstals", Sci. Rep. 6, 26197 (2016). See also: arXiv:1510.04101v1.

· Zhuhua Zhang, Xiaofei Liu, Jin Yu, Yang Hang, Yao Li, Yufeng Guo, Ying Xu, Xu Sun, Jianxin Zhou, Wanlin Guo, "Tunable electronic and magnetic properties of two-dimensional materials and their one-dimensional derivatives", WIREs Comput. Mol. Sci. 6, 324-350 (2016).

· Xiangying Su, Weiwei Ju, Ruizhi Zhang, Chongfeng Guo, Yongliang Yong, Hongling Cui, and Xiaohong Li, "Band gap modulation of transition-metal Dichalcogenide MX2 nanosheets by in-plane strain", Physica E 84, 216-222 (2016).

· San-Dong Guo, "Spin-orbit and strain effect on power factor in monolayer MoS2", Comput. Mater. Sci. 123, 8-13 (2016). See also: arXiv:1602.03632v1.

· Peng Zhou, Xiongfei Song, Xiao Yan, Chunsen Liu, Lin Chen, Qingqing Sun, and David Wei Zhang, "Controlling the work function of molybdenum disulfide by in situ metal deposition", Nanotechnol. 27, 344002 (2016).

· Shrouq H. Aleithan, Maksim Y. Livshits, Sudiksha Khadka, Jeffrey J. Rack, Martin E. Kordesch, and Eric Stinaff, "Broadband femtosecond transient absorption spectroscopy for a CVD MoS2 monolayers", Phys. Rev. B 94, 035445 (2016).

· Hongtao Yuan, Zhongkai Liu, Gang Xu, Bo Zhou, Sanfeng Wu, Dumitru Dumcenco, Kai Yan, Yi Zhang, Sung-Kwan Mo, Pavel Dudin, Victor Kandyba, Mikhail Yablonskikh, Alexei Barinov, Zhi-Xun Shen, Shoucheng Zhang, Ying-Sheng Huang, Xiaodong Xu, Zahid Hussain, Harold Y. Hwang, Yi Cui, and Yulin Chen, "Evolution of the Valley Position in Bulk Transition-Metal Chalcogenides and their Mono-Layer Limit", Nano Lett. 16, 4738-4745 (2016).

· Soyoung Jekal and Soon Cheol Hong, "First-principles Calculation on Magnetism of 1H/1T Boundary in Monolayer MoS2", J. Korean Magn. Soc. 26, 71-75 (2016) (written in Korean).

· Riley Gatensby, Toby Hallam, Kangho Lee, Niall McEvoy, and Georg S. Duesberg, "Investigations of vapour-phase deposited transition metal dichalcogenide films for future electronic applications", Solid-State Electronics 125, 39-51 (2016).

· Yoshiyuki Egami, Shigeru Tsukamoto, and Tomoya Ono, "First-principles calculation method and its applications for two-dimensional materials", arXiv:1610.00940v1 (2016).

· Enju Sakai, Naoka Nagamura, Jingyuan Liu, Takashi Hisatomi, Taro Yamada, Kazunari Domen, and Masaharu Oshima, "Investigation of the enhanced photocathodic activity of La5Ti2CuS5Ou photocathodes in H2 evolution by synchrotron radiation nanospectroscopy", Nanoscale 8, 18893-18896 (2016).

· Chuong V. Nguyen, Victor V. Ilyasov, Hieu V. Nguyen, and Hieu N. Nguyen, "Band gap and electronic properties of molybdenum disulphide uner strain engineering: density functional theroy calculations", Mol. Simul. 43, 86-91 (2016).

· Zhequan Yan, Liang Chen, Mina Yoon, and Satish Kumar, "The Role of Interfacial Electronic Properties on Phonon Transport in Two-dimensional MoS2 on Metal Substrates", ACS Appl. Mater. Interfaces 8, 33299-33306 (2016).

· Sang Wook Han, Youngsin Park, Young Hun Hwang, Soyoung Jekal, Manil Kang, Wang G. Lee, Woochul Yang, Gun-Do Lee, and Soon Cheol Hong, "Electron beam-formed ferromagnetic defects on MoS2 surface along 1T phase transition", Sci. Rep. 6, 38730 (2016).

· Tae-Kyung Oh, Hyunsu Ju, Hyeongtag Jeon, and Jeon-Kook Lee, "Correlation of nanostructure changes with the electrical properties of molybdenum disulfide (MoS2) as affected by sulfurization temperature", Appl. Phys. Lett. 109, 242104 (2016).

2017 {32}

· Chenxi Zhang, Cheng Gong, Yifan Nie, Kyung-Ah Min, Chaoping Liang, Young Jun Oh, Hengji Zhang, Weihua Wang, Suklyun Hong, Luigi Colombo, Robert M. Wallace, and Kyeongjae Cho, "Systematic study of electronic structure and band alignment of monolayer transition metal dichalcogenides in Van der Waals heterostructures", 2D Mater. 4, 015026 (2017).

· Puju Zhao, Jiming Zheng, Ping Guo, Zhenyi Jiang, Like Cao, and Yun Wan, "Electronic and magnetic properties of Re-doped single-layer MoS2: A DFT study", Comput. Mater. Sci. 128, 287-293 (2017).

· Xuexia He, WaiLeong Chow,Fcai Liu, BengKang Tay, and Zheng Liu, "MoS2/Rubrene van der Waals Heterostructure: Toward Ambipolar Field-Effect Transistors and Inverter Circuits", Small 13, 1602558 (2017).

· N. V. Denisov, A. V. Matetskiy, A. V. Tupkalo, A. V. Zotov, and A. A. Saranin, "Growth of layered superconductor β-PdBi2 films using molecular beam epitaxy", Appl. Surf. Sci. 401, 142-145 (2017).

· Eric Singh, Ki Seok Kim, Geun-Young Yeom, and Hari S. Nalwa, "Atomically Thin-layered Molybdenum Disulfide (MoS2) for Bulk-Heterojunction Solar Cells", ACS Appl. Mater. Interfaces 9, 3223-3245 (2017).

· Mathias Gehlmann, Irene Aguilera, Gustav Bihlmayer, Slavomír Nemšák, Philipp Nagler, Pika Gospodarič, Giovanni Zamborlini, Markus Eschbach, Vitaliy Feyer, Florian Kronast, Ewa Młyńczak, Tobias Korn, Lukasz Plucinski, Christian Schüller, Stefan Blügel, and Claus M. Schneider, "Direct observation of the band gap transition in atomically thin ReS2", arXiv:1702.04176v1 (2017).

· Li-Bin Shi, Ming-Biao Li, Xiao-Ming Xiu, Xu-Yang Liu, Kai-Cheng Zhang, Yu-Hui Liu, Chun-Ran Li, Hai-Kuan Dong, "First principles calculations of the interface properties of amorphous-Al2O3/MoS2 under non-strain and biaxial strain conditions", arXiv:1702.06498v1 (2017).

· Lin Yang, Shaohui, and Xuanhua Li, "Au nanoparticles@MoS2 core-shell structures with moderate MoS2 coverage for efficient photocatalytic water splitting", J. Alloys Compd. 706, 82-88 (2017).

· Youngho Kang and Seungwu Han, "An origin of unintentional doping in transition metal dichalcogenides: the role of hydrogen impurities", Nanoscale 9, 4265-4271 (2017).

· Wanshun Xia, Liping Dai, Peng Yu, Xin Tong, Wenping Song, Guojun Zhang, and Zhiming M. Wang, "Recent progress in van der Waals heterojunctions", Nanoscale 9, 4324-4365 (2017).

· Junjie Wang, Dong Hao, Jinhua Ye, and Naoto Umezawa, "Determination of Crystal Structure of Graphitic Carbon Nitride: Ab Initio Evolutionary Search and Experimental Validation", Chem. Mater. 29, 2694-2707 (2017).

· D. G. Kvashnin and L. A. Chernozatonskii, "Electronic and transport properties of heterophase compounds based on MoS2", JETP Lett. 105, 250-254 (2017).

· Junyoung Kwon, Jong-Young Lee, Young-Jun Yu, Chul-Ho Lee, Xu Cui, James Hones, and Gwan-Hyoung Lee, "Thickness-dependent Schottky barrier height of MoS2 field-effect transistors", Nanoscale 9, 6151-6157 (2017).

· Wei-Jhih Su, You-Li Wang, Wan-Siang Gan, Yi-Ping Wang, Hung-Pin Hsu, Shin-ichi Honda, Pao-Hung Lin, Ying-Sheng Huang, and Kuei-Yi Lee "Fabrication and current-voltage characteristics of Mo1-xWxS2/graphene oxide heterojunction diode", Surf. Coat. Technol. 320, 520-526 (2017).

· Li-Bin Shi, Ming-Biao Li, Xiao-Ming Xiu, Xu-Yang Liu, Kai-Cheng Zhang, Yu-Hui Liu, Chun-Ran Li, and Hai-Kuan Dong "First principles calculations of the interface properties of a-Al2O3/MoS2 and effects of biaxial strain", J. Appl. Phys. 121, 205305 (2017).

· C. González and Y. J. Dappe "Molecular detection on a defective MoS2 monolayer by simultaneous conductance and force simulations", Phys. Rev. B 95, 214105 (2017).

· Alhassan S. Yasin, Nianqiang Wu, Terence Musho, "Ab initio screening of a sulfur desorbed MoS2 photocatalyst for nitrogen fixation", arXiv:1706.05270v1 (2017).

· Santosh KC, Roberto C. Longo, Robert M. Wallace, and Kyeongjae Cho "Computational Study of MoS2/HfO2 Defective Interfaces for Nanometer-Scale Electronics", ACS Omega 2, 2827-2834 (2017).

· Yi Du, Jian Wang, Yidong Zou, Wen Yao, Jing Hou, Liangshu Xia, Anguo Peng, Ahmed Alsaedi, Tasawar Hayat, and Xiangke Wang, "Synthesis of molybdenum disulfide/reduced graphene oxide composites for effective removal of Pb(II) from aqueous solutions", Sci. Bull. 62, 913-922 (2017).

· Hong-Sik Kim, Melvin David Kumar, Malkeshkumar Patel, Joondong Kim, Byungjin Cho, and Dong-Ho Kim, "High-performing MoS2-embedded Si photodetector", Mater. Sci. Semicond. Process. 71, 35-41 (2017).

· Sang Wook Han, Gi-Beom Cha, Youngsin Park, and S. C. Hong, "Hydrogen physisorption based on the dissociative hydrogen chemisorption at the sulphur vacancy of MoS2 surface", Sci. Rep. 7, 7152 (2017).

· Ying-Ying Li, Jia-Hong Wang, Zhi-Jun Luo, Kai Chen, Zi-Qiang Cheng, Liang Ma, Si-Jing Ding, Li Zhou, and Qu-Quan Wang, "Plasmon-Enhanced Photoelectrochemical Current and Hydrogen Production of (MoS2-TiO2)/Au Hybrids", Sci. Rep. 7, 7178 (2017).

· Di Zhang, Wei-Qiang Liu, Yan-An Liu, U.J. Etim, Xin-Mei Liu, and Zi-Feng Yan, "Pore confinement effect of MoO3/Al2O3 catalyst for deep hydrodesulfurization", Chem. Eng. J. 330, 706-717 (2017).

· Xiangying Su, Hongling Cui, Weiwei Ju, Yongliang Yong, and Xiaohong Li, "First-principles investigation of MoS2 monolayer adsorbed on SiO2 (0001) Surface", Mod. Phys. Lett. B 31, 1750229 (2017).

· Jin Zhang, Hao Hong, Chao Lian, Wei Ma, Xiaozhi Xu, Xu Zhou, Huixia Fu, Kaihui Liu, and Sheng Meng, "Interlayer-State-Coupling Dependent Ultrafast Charge Transfer in MoS2/WS2 Bilayers", Adv. Sci. 4, 1700086 (2017).

· Tribhuwan Pandey, Swastibrata Bhattacharyya, and Abhishek K. Singh, "Strain Dependent Properties of 2D MX2 (M = Mo and W; X = S, Se and Te) (Book Chapter)", 2D Inorganic Materials beyond Graphene (Editors: C. N. R. Rao and U. V. Waghmare), Chapter 9, pp. 349-387 (2017) (World Scientific).

· A. Moghadasi, M. R. Roknabadi, S. R. Ghorbani, and M. Modarresi, "Electronic and phononic modulation of MoS2 under biaxial strain", Physica B 526, 96-101 (2017).

· Jong Mok Shin, Jun hee Choi, Do-Hyun Kim, Ho-Kyun Jang, Jinyoung Yun, Junhong Na, and Gyu-Tae Kim, "Induction heating effect on the performance of flexible MoS2 field-effect transistors ", Appl. Phys. Lett. 111, 153105(2017).

· Hoda Malekpour and Alexander A. Balandin, "Raman Optothermal Technique for Measuring Thermal Conductivity of Graphene and Related Materials", arXiv:1710.09749v1 (2017).

· Chia-Ti Wu, Sheng-Yao Hu, Kwong-Kau Tiong, and Yueh-Chien Lee, "Anisotropic effects in the Raman scattering of Re-doped 2H-MoSe2 layered semiconductors", Results in Physics 7, 4096-4100 (2017).

· Wenxu Zhang, Jiantao Qin, Zhishuo Huang, and Wanli Zhang, "The mechanism of layer number and strain dependent bandgap of 2D crystal PtSe2", J. Appl. Phys. 122, 205701 (2017).

· Woojin Park, Jung-Wook Min, Sohail Faizan Shaikh, and Muhammad Mustafa Hussain, "Stable MoS2 Field-Effect Transistors Using TiO2 Interfacial Layer at Metal/MoS2 Contact", Phys. Status Solidi A 214, 1700534 (2017).

2018 {40}

· Huynh V. Phuc, Nguyen N. Hieu, Bui D. Hoi, Le T.T. Phuong, and Chuong V. Nguyen, "First principle study on the electronic properties and Schottky contact of graphene adsorbed on MoS2 monolayer under applied out-plane strain", Surf. Sci. 668, 23-28 (2018).

· Bui Dinh Hoi and Mohsen Yarmohammadi, "The Kubo-Greenwood spin-dependent electrical conductivity of 2D transition-metal dichalcogenides and group-IV materials: A Green's function study", J. Magn. Magn. Mater. 451, 57-64 (2018).

· Hoda Malekpour and Alexander A. Balandin, "Raman-based technique for measuring thermal conductivity of graphene and related materials", J. Raman Spectrosc. 49, 106-120 (2018).

· Chenhai Shen and Guangtao Wang, "Electronic and optical properties of bilayer PbI2: a first-principles study", J. Phys. D: Appl. Phys. 51, 035301 (2018).

· Shaswat Barua, Hemant S Dutta, Satyabrat Gogoi, Rashmita Devi, and Raju Khan, "Nanostructured MoS2 Based Advanced Biosensors: A Review", ACS Appl. Nano Mater. 1, 2-25 (2018).

· Yanwei Luo, Shuai Zhang, Weiguang Chen, and Yu Jia, "Interlayer coupling effects on electronic properties of the phosphorene/h-BN van der Walls heterostructure: A first principles investigation", Physica B 534, 51-55 (2018).

· Emilio Scalise, Kostantina Iordanidou, Valeri V. Afanas'ev, André Stesmans, and Michel Houssa, "Silicene on non-metallic substrates: Recent theoretical and experimental advances", Nano Res. 11, 1169-1182 (2018).

· Adili Aiyiti, Shiqian Hu, Chengru Wang, Qing Xi, Zhaofang Cheng, Minggang Xia, Yanling Ma, Jianbo Wu, Jie Guo, Qilang Wang, Jun Zhou, Jie Chen, Xiangfan Xu, and Baowen Li, "Thermal conductivity of suspended few-layer MoS2", Nanoscale 10, 2727-2734 (2018).

· Morasae Samadi, Navid Sarikhani, Mohammad Zirak, Hua Zhang, Haoli Zhang, and Alireza Z. Moshfegh, "Group 6 transition metal dichalcogenide nanomaterials: synthesis, applications and future perspectives", Nanoscale Horiz. 3, 90-204 (2018).

· Junjie Shan, Jinhua Li, Xueying Chu, Mingze Xu, Fangjun Jin, Xuan Fang, Zhipeng Wei, and Xiaohua Wang, "Enhanced photoresponse characteristics of transistors using CVD-grown MoS2/WS2 heterostructures", Appl. Surf. Sci. 443, 31-38 (2018).

· Muhammad Zahir Iqbal, Nabeel Anwar Qureshi, and Ghulam Hussain, "Recent advancements in 2D-materials interface based magnetic junctions for spintronics", J. Magn. Magn. Mater. 457, 110-125 (2018).

· Nan-Fu Chiu and Ting-Li Lin, "Affinity capture surface carboxyl-functionalized MoS2 sheets to enhance the sensitivity of surface plasmon resonance", Talanta 185, 174-181 (2018).

· Youngsin Park, Nannan Li, Geunsik Lee, Kwang S. Kim, Ki-Jeong Kim, Soon Cheol Hong, and Sang Wook Han, "Sulfur-vacancy-dependent geometric and electronic structure of bismuth adsorbed on MoS2", Phys. Rev. B 97, 115307 (2018).

· Junjie Guo, Dingdong Xie, Bingchu Yang, and Jie Jiang, "Low-Power Logic Computing Realized in a Single Electric-Double-Layer MoS2 Transistor Gated with Polymer Electrolyte", Solid State Electron. 144, 1-6 (2018).

· Luojun Du, Tingting Zhang, Mengzhou Liao, Guibin Liu, Shuopei Wang, Rui He, Zhipeng Ye, Hua Yu, Rong Yang, Dongxia Shi, Yugui Yao, and Guangyu Zhang, "Temperature-driven evolution of critical points, interlayer coupling, and layer polarization in bilayer MoS2", Phys. Rev. B 97, 165410 (2018).

· Abhishek Parija, Yun-Hyuk Choi, Zhuotong Liu, Justin L. Andrews, Luis R. De Jesus, Sirine C. Fakra, Mohammed Al-Hashimi, James D. Batteas, David Prendergast, and Sarbajit Banerjee, "Mapping Catalytically Relevant Edge Electronic States of MoS2", ACS Cent. Sci. 4, 493-503 (2018).

· Yuanhui Sun, Shulin Luo, Xin-Gang Zhao, Koushik Biswas, Songlin Li, and Lijun Zhang, "InSe: a two-dimensional material with strong interlayer coupling", Nanoscale 10, 7991-7998 (2018). See also: arXiv:1803.09919v1.

· Yuanhui Sun, Xinjiang Wang, Xingang Zhao, Zhiming Shi, and Lijun Zhang, "First-principle high-throughput calculations of carrier effective masses of two-dimensional transition metal dichalcogenides", J. Semicond. 39, 072001 (2018).

· Mu Xiao, Bin Luo, Supphasin Thaweesak, and Lianzhou Wang, "Noble-metal-free MoS2/Ta3N5 heterostructure photocatalyst for hydrogen generation", Prog. Nat. Sci.: Mater. Intl. 28, 189-193 (2018).

· H.R. Noori, E. Jomehzadeh, N. Alajlan, and T. Rabczuk, "Elastic deformation behavior of freestanding MoS2 films using a continuum approach", Solid State Commun. 280, 24-31 (2018).

· Junsen Gao, Dipanjan Nandi, and Manisha Gupta, "Density functional theory-projected local density of states-based estimation of Schottky barrier for monolayer MoS2", J. Appl. Phys. 123, 014052 (2018).

· Rahul Kumar, Neeraj Goel, Ramesh Raliya, Pratim Biswas, and Mahesh Kumar, "High-performance photodetector based on hybrid of MoS2 and reduced graphene oxide", Nanotechnology 29, 404001 (2018).

· Nam Khen Oh, Hoon Ju Lee, Keunsu Choi, Jihyung Seo, Ungsoo Kim, Junghyun Lee, Yunseong Choi, Seungon Jung, Jun Hee Lee, Hyeon Suk Shin, and Hyesung Park, "Nafion-Mediated Liquid-Phase Exfoliation of Transition Metal Dichalcogenides and Direct Application in Hydrogen Evolution Reaction", Chem. Mater. 30, 4658-4666 (2018).

· Weiwei Xu, Jianwei Wang, Amel Laref, Juan Yang, Xiaozhi Wu, and Rui Wang, "Electronic Properties of Armchair MoS2 Nanoribbons with Stacking Faults: First-Principles Calculations", J. Electron. Mater. 47, 5498-5508 (2018).

· Haijun Wu, Xiaoxu Zhao, Dongsheng Song, Feng Tian, John Wang, Kian Ping Loh, Stephen J. Pennycook, "Progress and prospects of aberration-corrected STEM for functional materials", Ultramicroscopy 194, 182-192 (2018).

· Teresa Cusati, Alessandro Fortunelli, Gianluca Fiori, and Giuseppe Iannaccone, "Stacking and interlayer electron transport in MoS2", Phys. Rev. B 98, 115403 (2018).

· Sung-Chul Kim, Md. Shahinul Islam, and Seong-Ju Hwang, "Application of Exfoliated Inorganic Nanosheets for Strongly-Coupled Hybrid Photocatalysts", RRL Solar 2, 1800092 (2018).

· Jinlong Du, Hongda Wu, Xiaorong Wang, Chengyuan Qi, Wei Mao, Tieqiang Ren, Qingdong Qiao, and Zhanxu Yang, "Ternary MoS2/MoO3/C Nanosheets as High-Performance Anode Materials for Lithium-Ion Batteries", J. Elect. Mater. 47, 6767-6773 (2018).

· Hao Wang, Wei Wei, Fengping Li, Baibiao Huang, and Ying Dai, "Step-like band alignment and stacking-dependent band splitting in trilayer TMDs heterostructures", Phys. Chem. Chem. Phys.20, 25000-25008 (2018).

· Wenli Zhang, Dahu Chang, Qiang Gao, Chunyao Niu, Chong Li, Fei Wang, Xiaowei Huang, Congxin Xia, and Yu Jia, "Interlayer coupling and external electric field tunable electronic properties of 2D type-I α-tellurene/MoS2 heterostructure", J. Mater. Chem. C 6, 10256-10262 (2018).

· Matthias Drüppel, Thorsten Deilmann, Jonathan Noky, Philipp Marauhn, Peter Krüger, and Michael Rohlfing, "Electronic excitations in transition metal dichalcogenide monolayers from an LDA+GdW approach", Phys. Rev. B 98, 155433 (2018).

· Weiwei Xu, Jianwei Wang, Amel Laref, Rui Wang, and Xiaozhi Wu, "Effects of Multiple Stacking Faults on the Electronic and Optical Properties of Armchair MoS2 Nanoribbons: First-Principles Calculations", J. Elect. Mater. 47, 7114-7128 (2018).

· M. Houssa, E. Scalise, V. V. Afanas'ev, and A. Stesmans, "Synthesis of Silicene on Alternative Substrates (Book Chapter)", Silicene. NanoScience and Technology (Editors: P. Vogt and G. Le Lay), Chapter 10, pp. 197-208 (2018) (Springer).

· Gayatree Barik and Sourav Pal, "Monolayer Transition Metal Dichalcogenide Mo1-xWxS2 Alloys as Efficient Anode Materials for Lithium Ion Batteries", J. Phys. Chem. C 122, 25837-25848 (2018).

· Arash Boochani and Somaye Veisi, "The Vanadium Effect on Electronic and Optical Response of MoS2 Graphene-Like: Using DFT", Silicon 10, 2855-2863 (2018).

· Sajid Husain, Abhishek Kumar, Prabhat Kumar, Ankit Kumar, Vineet Barwal, Nilamani Behera, Sudhanshu Choudhary, Peter Svedlindh, and Sujeet Chaudhary, "Spin pumping in the Heusler alloy Co2FeAl/MoS2 heterostructure: Ferromagnetic resonance experiment and theory", Phys. Rev. B 98, 180404(R) (2018).

· Chujun Chen, Xia Xin, Jinniu Zhang, Gang Li, Yafeng Zhang, Hongbing Lu, Jianzhi Gao, Zhibo Yang, Chunlan Wang, and Ze He, "Few-Layered MoS2 Nanoparticles Loaded TiO2 Nanosheets with Exposed {001} Facets for Enhanced Photocatalytic Activity", Nano 13, 1850129 (2018).

· Bin Qiu, Xiuwen Zhao, Guichao Hu, Weiwei Yue, Junfeng Ren, and Xiaobo Yuan, "Optical Properties of Graphene/MoS2 Heterostructure: First Principles Calculations", Nanomater. 8, 962 (2018).

· Leyla Najafi, Babak Taheri, Beatriz Martín-García, Sebastiano Bellani, Diego Di Girolamo, Antonio Agresti, Reinier Oropesa-Nuñez, Sara Pescetelli, Luigi Vesce, Emanuele Calabrò, Mirko Prato, Antonio E. Del Rio Castillo, Aldo Di Carlo, and Francesco Bonaccorso, "MoS2 Quantum Dot/Graphene Hybrids for Advanced Interface Engineering of a CH3NH3PbI3 Perovskite Solar Cell with an Efficiency of over 20%", ACS Nano 12, 10736-10754 (2018).

· Qingchun Zhao, "Tunable Excitation-Dependent Photoluminescences Using Energy Gap Regulating Photogenerated Electrons Injection Rate from Excited TiO2 Nanoparticles to MoS2 Nanosheets", Russ. J. Appl. Chem. 91, 2012-2021 (2018).

2019 {30}

· Ghazal Bishal and Rostam Moradian, "The effects of vanadium absorbed by WS2 monolayer on the electronic, magnetic and optical properties: A first principle study", Comput. Conden. Matter 18, e00352 (2019).

· Sonali Das, Deepak Pandey, Jayan Thomas, and Tania Roy, "The Role of Graphene and Other 2D Materials in Solar Photovoltaics", Adv. Mater. 31, 1802722 (2019).

· Xue Yao, Yaru Wang, Xingyou Lang, Yongfu Zhu, and Qing Jiang, "Thickness-dependent bandgap of transition metal dichalcogenides dominated by interlayer van der Waals interaction", Physica E 109, 11-16 (2019).

· J. Pan, X. Y. Zhou, R. Wang, J. H. He, L. J. Meng, and J. G. Hu, "Hydrogen passivation tunes edge magnetism in the ZMoS2NR with a sulfur vacancy", Phys. Lett. A 383, 539-549 (2019).

· Yafei Zhao, Yizhe Sun, Xiaoying Hu, Jian Tu, Qinwu Gao, Wei Wang, Yao Li, Xuezhong Ruan, Fengqiu Wang, Wenqing Liu, Wenqin Zou, Yongbing Xu, and Liang He, "Enhancing photocatalytic activity in monolayer MoS2 by charge compensated co-doping with P and Cl: First principles study", Mol. Catal. 468, 94-99 (2019).

· Shin-Yi Tang, Henry Medina, Yu-Ting Ye, Chia-Wei Che, Tzu-Yi Yan, Kung-Hwa Wei, and Yu-Lun Chue, "Enhanced Photocarrier Generation with Selectable Wavelengths by M-Decorated-CuInS2 Nanocrystals (M = Au and Pt) Synthesized in a Single Surfactant Process on MoS2 Bilayers", Small 15, 1803529 (2019).

· Yanlong Wang, Chunxiao Cong, Jingzhi Shang, Mustafa Eginligil, Yuqi Jin, Gang Li, Yu Chen, Namphung Peimyoo, and Ting Yu, "Unveiling exceptional valley contrast in AA- and AB-stacked bilayer WS2", Nanoscale Horiz. 4, 396-403 (2019).

· Lei Jiao, Wenjing Jie, Zhibin Yang, Yuehui Wang, Zhengwei Chen, Xiao Zhang, Weihua Tang, Zhenping Wu, and Jianhua Hao, "Layer-dependent photoresponse of 2D MoS2 films prepared by pulsed laser deposition", J. Mater. Chem. C 7, 2522-2529 (2019).

· Sang Wook Han, Gi-Beom Cha, Manil Kang, Jong Duk Lee,and Soon Cheol Hong, "Hydrogen interaction with selectively desulfurized MoS2 surface using Ne+ sputtering", J. Appl. Phys. 125, 085102 (2019).

· Yusi Yang, Xia Wang, Shun-Chang Liu, Zongbao Li, Zhaoyang Sun, Chunguang Hu, Ding-Jiang Xue, Gengmin Zhang, and Jin-Song Hu, "Weak Interlayer Interaction in 2D Anisotropic GeSe2", Adv. Sci. 6, 1801810 (2019).

· Dongxiao Lu, Qiang Zhou, Fangfei Li, Xiaowei Li, and Geyu Lu, "Influence of interlayer interaction on relaxation dynamics of excitons in ultrathin MoS2", Nanoscale Adv. 1, 1186-1192 (2019).

· Abeera Rahman, Hye Jung Kim, Mohammad Noor-A-Alam, and Young-Han Shin, "A theoretical study on tuning band gaps of monolayer and bilayer SnS2 and SnSe2 under external stimuli", Curr. Appl. Phys. 19, 709-714 (2019).

· Hyong Seo Yoon, Juyeong Oh, Jae Young Park, JeongSeob Kang, Junyoung Kwon, Teresa Cusati, Gianluca Fiori, Giuseppe Iannaccone, Alessandro Fortunelli, V. Ongun Ozcelik, Gwan-Hyoung Lee, Tony Low, and Seong Chan Jun, "Phonon-assisted carrier transport through a lattice-mismatched interface", NPG Asia Mater. 11, 14 (2019).

· Ghazal Bishal and Rostam Moradian, "Ab initio investigation of the optical properties of layered MoSxSe(2-x) (0 ≤ x ≤ 2): By GGA and mBJ approaches", Int. J. Modern Phys. B 33, 1950062 (2019).

· Yuting Wei, Fei Wang, Wenli Zhang, and Xiuwen Zhang, "Electric field modulation of electronic properties in type-II phosphorene/PbI2 van der Waals heterojunction", Phys. Chem. Chem. Phys. 21, 7765-7772 (2019).

· Yaoyao Linghu and Chao Wu, "1T'-MoS2, a Promising Candidate for Sensing NOx", J. Phys. Chem. C 123, 10339-10345 (2019).

· Chunxia Yang, Bo Wang, Yunong Xie, Yifan Zheng, and Chuanhong Jin, "Deriving MoS2 nanoribbons from their flakes by chemical vapor deposition", Nanotechnology 30, 255602 (2019).

· Weiwei Xu, Wangping Xu, Fangyang Zhan, Amel Laref, Rui Wang, and Xiaozhi Wu, "Effects of Stone-Wales Defect on the Electronic and Optical Properties of Armchair MoS2 Nanoribbon: First-Principles Calculations", J. Elect. Mater. 48, 3763-3776 (2019).

· Junpei Zhang, Linhua Yao, Nan Zhou, Hongwei Dai, Hui Cheng, Mingshan Wang, Luman Zhang, Xiaodie Chen, Xia Wang, Tianyou Zhai, and Junbo Han, "Multiphoton Excitation and Defect-Enhanced Fast Carrier Relaxation in Few-Layered MoS2 Crystals", J. Phys. Chem. C 123, 11216-11223 (2019).

· Yi Yang, Yunzhen Zhang, Han Ye, Zhongyuan Yu, Yumin Liu, Bida Su, and Wenbin Xu, "Structural and electronic properties of 2H phase Janus transition metal dichalcogenide bilayers", Superlattice Microst. 131, 8-14 (2019).

· Xiaoxiao Guan, Guojun Zhu, Xiaolin Wei, and Juexian Cao, "Tuning the electronic properties of monolayer MoS2, MoSe2 and MoSSe by applying z-axial strain", Chem. Phys. Lett. 730, 191-197 (2019).

· Abeera Rahman, Hye Jung Kim, Mohammad Noor-A-Alam, and Young-Han Shin, "A theoretical study on tuning band gaps of monolayer and bilayer SnS2 and SnSe2 under external stimuli", Curr. Appl. Phys. 19, 709-714 (2019).

· Soheil Rashidi, Akshay Caringula, Andy Nguyen, Ijeoma Obi, Chioma Obi, and Wei Wei, "Recent progress in MoS2 for solar energy conversion applications", Frontiers in Energy 13, 251-268 (2019).

· Dhanshree Pandey and Aparna Chakrabarti, "Prediction of two-dimensional monochalcogenides: MoS and WS", Phys. Lett. A 383, 2914-2921 (2019).

· Samuel J. Magorrian, "Introduction (Book Chapter)", Theory of Electronic and Optical Properties of Atomically Thin Films of Indium Selenide (Editors: Samuel J. Magorrian), Chapter 1, pp. 1-11 (2019) (Springer).

· F. F. Mao, Z. Jin, L. Y. Shang, Z. G. Hu, and J. H. Chu, "Static characteristics of CMOS digital circuit based on transition metal dichalcogenide transistors", AIP Adv. 9, 085031 (2019).

· Lang Pei, Yong-Jun Yuan, Jiasong Zhong, Taozhu Li, Tao Yang, Shicheng Yan, Zhenguo Ji, and Zhigang Zou, "Ta3N5 nanorods encapsulated into 3D hydrangea-like MoS2 for enhanced photocatalytic hydrogen evolution under visible light irradiation", Dalton Trans. 48, 13176-13183 (2019).

· Yong Yan, Wenqi Xiong, Shasha Li, Kai Zhao, Xiaoting Wang, Jian Su, Xiaohui Song, Xueping Li, Shuai Zhang, Huai Yang, Xinfeng Liu, Lang Jiang, Tianyou Zhai, Congxin Xia, Jingbo Li, and Zhongming Wei, "Direct Wide Bandgap 2D GeSe2 Monolayer toward Anisotropic UV Photodetection", Adv. Opt. Mater. 7, 1900622 (2019).

· Huating Liu, Zongyu Huang, Peng Wu, Wenming Xue, Chaoyu He, Xiang Qi, and Jianxin Zhong, "Band offsets engineering in asymmetric Janus bilayer transition-metal dichalcogenides", J. Phys.: Condens. Matter 32, 035502 (2019).

· Chun Hin Mak, Shenghuang Lin, Lukas Rogee, and Shu Ping Lau, "Photoresponse of wafer-scale palladium diselenide films prepared by selenization method", J. Phys. D: Appl. Phys. 53, 065102 (2019).

2020 {28}

· M. Ozcan, S. Ozen, M. Yagmurcukardes, and H. Sahin, "Structural, Electronic and Vibrational Properties of Ultra-Thin Octahedrally Coordinated Structure of EuO2", J. Magn. Magn. Mater. 493, 165668 (2020).

· Zhonghan Cao, Fanrong Lin, Gu Gong, Hao Chen, and Jens Martin, "Low Schottky barrier contacts to 2H-MoS2 by Sn electrodes", Appl. Phys. Lett. 116, 022101 (2020).

· Honglin Li, Yuting Cui, Wanjun Li, Lijuan Ye, and Lin Mu, "Strain-tunable band alignment of blue phosphorus-WX22 (X=S/Se/Te) vertical heterostructures: from first-principles study", Appl. Phys. A 126, 92 (2020).

· Haixia Li, Aiming Ji, Canyan Zhu, Lei Cui, and Ling-Feng Mao, "Layer-dependent bandgap and electrical engineering of molybdenum disulfide", J. Phys. Chem. Solids 139, 109331 (2020).

· Sintayehu Mekonnen Hailemariam, "Electronic Structure and Room Temperature of 2D Dilute Magnetic Semiconductors in Bilayer MoS2-Doped Mn", Adv. Condens. Matter Phys. 2020, 9635917 (2020).

· Rekha RaniDutta, Rashmita Devi, Hemant S.Dutta, and Satyabrat Gogoi, "Transition metal dichalcogenides for biomedical applications (Book Chapter)", Two-Dimensional Nanostructures for Biomedical Technology (Editors: Raju Khan and Shaswat Barua), Chapter 7, pp. 211-247 (2020) (ELSEVIER).

· Yawen Li, Yuanhui Sun, Guangren Na, Wissam A. Saidi, and Lijun Zhang, "Diverse electronic properties of 2D layered Se-containing materials composed of quasi-1D atomic chains", Phys. Chem. Chem. Phys. 22, 2122-2129 (2020).

· Xiaofei Liu, Yao Li, and Wanlin Guo, "Friction Modulation via Photoexcitation in Two-Dimensional Material", ACS Appl. Mater. Interfaces 12, 2910-2915 (2020).

· Xueping Li, Baoxing Zhai, Xiaohui Song, Yong Yan, Jingbo Li, and Congxin Xia, "Two-dimensional Janus-In2STe/InSe heterostructure with direct gap and staggered band alignment", Appl. Surf. Sci. 509, 145317 (2020).

· Sohail Ahmad and Georg Schreckenbach, "Ab initio study of strain and electric field dependent variation in electronic and thermoelectric properties of PdS2", Mater. Today Commun. 24, 100976 (2020).

· Farahnaz Zakerian, Morteza Fathipour, Rahim Faez, and Ghafar Darvish, "Near-room-temperature spin caloritronics in a magnetized and defective zigzag MoS2 nanoribbon", J. Comput. Elect. 19, 137-146 (2020).

· Sohail Ahmad, "Strain and electric field dependent variation in electronic and thermoelectric properties of PtS2", Results Phys. 17, 103088 (2020).

· Kailiang Huang, Miao Zhao, Bing Sun, Xueyuan Liu, Hudong Chang, Yuping Zeng, Honggang Liu, and Jianhua Liu, "Transition from Hopping to Band-like Transport in Weakly-coupled Multilayer MoS2 Field Effect Transistors", ACS Appl. Electron. Mater. 2, 971-979 (2020).

· Weon-Gyu Lee, You Kyoung Chung, Junho Lee, Bum Jun Kim, Sudong Chae, Byung Joo Jeong, Jae-Young Choi, and Joonsuk Huh, "Edge Defect-Free Anisotropic Two-Dimensional Sheets with Nearly Direct Band Gaps from a True One-Dimensional Van der Waals Nb2Se3 Material", ACS Omega 5, 10800-10807 (2020).

· Dongxue Meng, Mingkai Li, Debing Long, Yang Cheng, Pan Yea, Wang Fu, Wentao E, Wei Luo, Yunbin He, "Electronic structure and dynamic properties of two-dimensional WxMo1-xS2 ternary alloys from first-principles calculations", Comput. Mater. Sci. 182, 109797 (2020).

· Xue Yao, Ya-Ru Wang, Xing-You Lang, Yong-Fu Zhu, and Qing Jiang, "Composition- and lyaer-dependent bandgap of two-dimensional transition metal dichalcogenides alloys", Physica E 124, 114243 (2020).

· Zeynep Kahraman, Mehmet Yagmurcukardes, and Hasan Sahin, "Functionalization of single-layer TaS2 and formation of ultrathin Janus structures", J. Mater. Res. 35, 1397-1406 (2020).

· Xu Zhao, Mengli Dang, Wencheng Niu, Qianyi Zhao, Xianqi Dai, and Shuyi Wei, "Stable typeII PtSe2/SnSe2 van der Waals heterostructure", Physica E 124, 114254 (2020).

· Yichen Mao, Ailing Chang, Pengpeng Xu, Chunyu Yu, Wei Huang, Songyan Chen, Zhengyun Wu, and Cheng Li, "Observation of trap- related phenomena in electrical performance of back- gated MoS2 field effect transistors", Semicond. Sci. Technol. 35, 095023 (2020).

· Wanjun Li, Honglin Li, Yuanqiang Xiong, Hong Zhang, Ying Yang, and Lijuan Ye, "Strain and electric-field induced tunable electronic properties of blue phosphorus-GeS/SnS/SnSe (orthorhombic) vdW heterostructures", Phys. Lett. A 384, 126829 (2020).

· Jiseok Kwon, Collin J. Delker, C. Thomas Harris, Suprem R. Das, and David B. Janes, "Experimental and modeling study of 1/f noise in multilayer MoS2 and MoSe2 field-effect transistors", J. Appl. Phys. 128, 094501 (2020).

· Han Li, Jiajun Wang, Yating Ma, Jiao Chu, Xiang'ai Cheng, Lei Shi, and Tian Jiang, "Enhanced directional emission of monolayer tungsten disulfide (WS2) with robust linear polarization via one-dimensional photonic crystal (PhC) slab", Nanophotonics 9, 4337-4345 (2020).

· Hailong Lin, Faguang Yan, Ce Hu, Quanshan Lv, Wenkai Zhu, Ziao Wang, Zhongming Wei, Kai Chang, and Kaiyou Wang, "Spin-Valve Effect in Fe3GeTe2/MoS2/Fe3GeTe2 van der Waals Heterostructures", ACS Appl. Mater. Interfaces 12, 43921-43926 (2020).

· Jakub Sitek, Janusz Plocharski, Iwona Pasternak, Arkadiusz P. Gertych, Clifford McAleese, Ben R. Conran, Mariusz Zdrojek, and Wlodek Strupinski, "Substrate-Induced Variances in Morphological and Structural Properties of MoS2 Grown by Chemical Vapor Deposition on Epitaxial Graphene and SiO2", ACS Appl. Mater. Interfaces 12, 45101-45110 (2020).

· Zheng Fang, Xing Li, Wenhao Shi, Zhiwei Li, Yufeng Guo, Qing Chen, Lian-Mao Peng, and Xianlong Wei, "Interlayer Binding Energy of Hexagonal MoS2 as Determined by an in-situ Peeling-to-Fracture Method", J. Phys. Chem. C 124, 23419-23425 (2020).

· Han Li, Yating Ma, Yizhen Sui, Yuxiang Tang, Ke Wei, Xiang'ai Cheng, and Tian Jiang, "Valley depolarization n downconversion and upconversion emission of monolayer WS2 at room temperature", Nanophotonics 9, 4809-4818 (2020).

· Yan Wang, Yu Zhou, Xiao-Ping Liu, Zhao-Yi Zeng, Cui-E. Hu, and Xiang-Rong Chen, "Thermoelectric properties of MoC monolayers from first-principles calculations", AIP Adv. 10, 125220 (2020).

2021 {16}

· Xiang Lei, Wei Cai, Yilong Ma, Rongli Gao, Zhenhua Wang, Gang Chen, Xiaoling Deng, and ChunlinFu, "Blue Phosphorus-MoX2 (X=S/Se/Te) heterobilayers with strain enhanced photovoltaic properties: A first-principle study", Physica E 125, 114414 (2021).

· Di Zhang, Xin-Mei Liu, Yu-Xiang Liu, and Zi-Feng Yan, "Impact of γ-alumina pore structure on structure and performance of Ni−Mo/γ-Al2O3 catalyst for 4,6-dimenthyldibenzothiophene desulfurization", Microporous Mesoporous Mat. 310, 110637 (2020).

· Junais Habeeb Mokkath, "Subfemtosecond charge dynamics in vertically stacked bilayer silicene", Quantum Chem. 121, e26521 (2021).

· Soumi Halder, Arka Dey, Sayantan Sil, and Partha Pratim Ray, "Study of A.C. conductivity and dielectric behaviour of hydrothermally synthesised molybdenum disulphide", J. Mater. Sci.: Mater. Elect. 32, 168-181 (2021).

· Jinhua Wang and Gyaneshwar P. Srivastava, "Tunable Electronic Properties of Lateral Monolayer Transition Metal Dichalcogenide Superlattice Nanoribbons", Nanomaterials 11, 534 (2021).

· Yichen Mao, Pengpeng Xu, Qiang Wu, Jun Xiong, Renmiao Peng, Wei Huang, Songyan Chen, Zhengyun Wu, and Cheng Li, "Self-Powered High-Detectivity Lateral MoS2 Schottky Photodetectors for Near-Infrared Operation", Adv. Elect. Mater. 7, 2001138 (2021).

· Huimin Hu and Jin-Ho Choi, "Adsorption of atomic hydrogen on monolayer MoS2", Nanotechnology 32, 235701 (2021).

· Michele Masseroni, Tim Davatz, Riccardo Pisoni, Folkert K. de Vries, Peter Rickhaus, Takashi Taniguchi, Kenji Watanabe, Vladimir Fal'ko, Thomas Ihn, and Klaus Ensslin, "Electron transport in dual-gated three-layer MoS2", Phys. Rev. Res. 3, 023047 (2021). See also: arXiv:2104.08916.

· Amritanjali Tiwari, Amit Gautam, Saddam Sk, Deepak S. Gavali, Ranjit Thapa, and Ujjwal Pal, "Controlled Loading of MoS2 on Hierarchical Porous TiO2 for Enhanced Photocatalytic Hydrogen Evolution", J. Phys. Chem. C 125, 11950-11962 (2021).

· Sang Wook Han, Won Seok Yun, Whang Je Woo, Hyungjun Kim, Jusang Park, Young Hun Hwang, Tri Khoa Nguyen, Chinh Tam Le, Yong Soo Kim, Manil Kang, Chang Won Ahn, and Soon Cheol Hong, "Interface Defect Engineering of a Large-Scale CVD-Grown MoS2 Monolayer via Residual Sodium at the SiO2/Si Substrate", Adv. Mater. Interfaces 8, 2100428 (2021).

· Han Li, Yating Ma, Zhongjie Xu, Xiang’ai Cheng, and Tian Jiang, "Giant Photoluminescence Enhancement and Carrier Dynamics in MoS2 Bilayers with Anomalous Interlayer Coupling", Nanomaterials 11, 1994 (2021).

· Jianlian Liu, Chaojun Du, Yanping Duan, and Hong Hao, "Highly selective adsorption of SO2 on WX2 (X = S, Se, Te) monolayers and the effect of strain engineering: a DFT study", J. Comput. Electron. 20, 1874-1883 (2021).

· Chittatosh Pal, Taku T. Suzuki, and Subrata Majumder, "Electrochemical growth of two-dimensional MoS2 nanosheets for development of femtomolar Hg(II) ion label-free biosensor", Chem. Phys. Lett. 784, 139115 (2021).

· Xiantong Yu, Xin Wang, Feifan Zhou, Junle Qu, and Jun Song, "2D van der Waals Heterojunction Nanophotonic Devices: From Fabrication to Performance", Adv. Funct. Mater. 31, 2104260 (2021).

· Jihong Bae, Minjung Kim, Hyeonsoo Kang, Taeyoung Kim, Hong Choi, Bokyeong Kim, Hyung Wan Do, and Wooyoung Shim, "Kinetic 2D Crystals via Topochemical Approach", Adv. Mater. 33, 2006043 (2021).

· Freskida Goni, Angela Chemelli, and Frank Uhlig, "High-Yield Production of Selected 2D Materials by Understanding Their Sonication-Assisted Liquid-Phase Exfoliation", Nanomaterials 11, 3253 (2021).

· Sang Wook Han, Won Seok Yun, Hyesun Kim, Yanghee Kim, D.-H. Kim, Chang Won Ahn, and S. Ryu, "Hole doping effect of MoS2 via electron capture of He+ ion irradiation", Sci. Rep. 11, 23590 (2021).

2022 {18}

· Xiangyu Zeng, Ge Ye, Shuyi Huang, Qikai Ye, Wei Li, Chufan Chen, Haoze Kuang, Menglu Li, Yulu Liu, Zhijin Pan, Tawfique Hasan, Jikui Luo, Xin Lu, and Xiaozhi Wang, "Thickness modulations enable multi-functional spin valves based on Van der Waals hetero-structure", Nano Today 42, 101373 (2022).

· Yishu Wang, Xiaokun Zhai, Liefeng Feng, and Tingge Gao, "Enhancing excitons by oleic acid treatment in WS2, MoS2, and WS2/MoS2 heterostructure", Appl. Phys. Express 15, 022005 (2022).

· Rui Hu, Zizhen Zhou, Caiyu Sheng, Shihao Han, Hongmei Yuan, and Huijun Liu, "Ultralow lattice thermal conductivity and high thermoelectric performance of the WS2/WTe2 van der Waals superlattice", Phys. Lett. A 430, 127986 (2022).

· Li-Long Luo, Pingxia Wang, Xiangyan Geng, Ying-Tao Liu, Roberts I. Eglitis, Hongqiang Xia, Xiaoyong Lai, and Xin Wang, "First-principle calculations of 0D/2D GQDs-MoS2 mixed van der Waals heterojunctions for photocatalysis: A transition from type I to type II", Phys. Chem. Chem. Phys. 24, 8529-8536 (2022).

· Shiddartha Paul, Riccardo Torsi, Joshua A. Robinson, and Kasra Momeni, "Effect of the Substrate on MoS2 Monolayer Morphology: An Integrated Computational and Experimental Study", ACS Appl. Mater. Interfaces 14, 18835-18844 (2022).

· Lokanath Patra and Ravindra Pandey, "Mechanical Properties of 2D Materials: A Review on Molecular Dynamics based Nanoindentation Simulations", Mater. Today Commun. 31, 103623 (2022).

· Rong Hu, Yanmo Liao, Hui Qiao, Jun Li, Kai Wang, Zongyu Huang, and Xiang Qi, "Electrochemical method integrating exfoliation and in-situ growth to synthesize MoS2 nanosheets/MnO2 heterojunction for performance-enhanced supercapacitor", Ceram. Int. 48, 23498-23503 (2022).

· Shubham Patel, Urmimala Dey, Narayan Prasad Adhikari, and A. Taraphder, "Electric field and strain-induced band-gap engineering and manipulation of the Rashba spin splitting in Janus van der Waals heterostructures", Phys. Rev. B 106, 035125 (2022). See also: arXiv:2112.15457.

· Fangyuan Zha, Hongwei Chu, Zhongben Pan, Han Pan, Shengzhi Zhao, Ming Yang, and Dechun Li, "Large-scale few-layered MoS2 as a saturable absorber for Q-switching operation at 2.3 µm", Opt. Lett. 47, 3271-3274 (2022).

· Indrajit Chakraborty, Zhanhu Guo, Anirban Bandyopadhyay, and Pathik Sahoo, "Physical Modifications and Algorithmic Predictions behind Further Advancing 2D Water Splitting Photocatalyst: An Overview", Eng. Sci. 20, 31-41 (2022).

· Lan Xiao, Ziyi Wang, Chang Shi, Xueli Yu, Liang Ma, Haixia Li, Guojia Fang, and Pingli Qin, "Simple Ball-Milled Molybdenum Sulfide Nanosheets for Effective Interface Passivation with Self-repairing Function to Attain High-Performance Perovskite Solar Cells", Solar RRL 6, 2200061 (2022).

· Wondeok Seo, Woojin Park, Hyun Young Seo, Seyoung Oh, Ojun Kwon, Soo Hong Jeong, Do Hyeong Kim, Min Jeong Kim, Sang Kyung Lee, Byoung Hun Lee, and Byungjin Cho, "MoS2/p-Si heterojunction with graphene interfacial layer for high performance 940 nm infrared photodetector", Appl. Surf. Sci. 604, 154485 (2022).

· Ehsan Elahi, Ghulam Dastgeer, Pradeep Raj Sharma, Sobia Nisar, Muhammad Suleman, Muhammad Waqas Iqbal, Muhammad Imran, Muhammad Aslam, and Ali Imran, "A brief review on the spin valve magnetic tunnel junction composed of 2D materials", J. Phys. D: Appl. Phys. 55, 423001 (2022).

· Nur Hidayati Othman, Nurul Syazana Fuzil, Nur Hashimah Alias, Munawar Zaman Shahruddin, Muhammad Shafiq Mat Shayuti, Woei Jye Lau, Ahmad Fauzi Ismail, Sumaiya Zainal Abidin, Sarina Sulaiman, and Tutuk Djoko Kusworo, "Fabrication of MoS2–rGO and MoS2–ZIF-8 membranes supported on flat alumina substrate for effective oil removal", Emerg. Mater. 5, 1169-1182 (2022).

· Meng Hao Lee and Wenzhuo Wu, "2D Materials for Wearable Energy Harvesting", Adv. Mater. Technol. 7, 2101623 (2022).

· Yafei Zhao, Kuiying Nie, and Liang He, "Tuning electronic and optical properties of monolayer MoS2 by transition metal and nitrogen co-doping", Phys. Scr. 97, 115815 (2022).

· Hao Wang, Xiaojie Xu, and Talgar Shaymurat, "Effect of Different Solvents on Morphology and Gas-Sensitive Properties of Grinding-Assisted Liquid-Phase-Exfoliated MoS2 Nanosheets", Nanomaterials 12, 4485 (2022).

· Zhihui Mao, XinSheng Peng, Yangyang Zhou, Yawen Liu, Kwangnak Koh, and Hongxia Chen, "Review of Interface Modification Based on 2D Nanomaterials for Surface Plasmon Resonance Biosensors", ACS Photonics 9, 3807-3823 (2022).

2023 {14}

· Haixia Li, Youyong Li, Han Jiang, Lingfeng Mao, and Yanan Ni, "Characteristic analysis of the MoS2/SiO2 interface field-effect transistor with varying MoS2 layers", J. Mater. Sci.: Mater. Electron. 34, 427 (2023).

· Dian Putri Hastuti, Kenji Nawa, and Kohji Nakamura, "Electronic Structures of Graphene/MoS2 Heterostructure: Effects of Stacking Orientation, Element Substitution, and Interlayer Distance", Indones. J. Chem. 23, 140-147 (2023).

· Zhenyu Wang, Mukesh Tripathi, Zahra Golsanamlou, Poonam Kumari, Giuseppe Lovarelli, Fabrizio Mazziotti, Demetrio Logoteta, Gianluca Fiori, Luca Sementa, Guilherme Migliato Marega, Hyun Goo Ji, Yanfei Zhao, Aleksandra Radenovic, Giuseppe Iannaccone, Alessandro Fortunelli, and Andras Kis, "Substitutional P-type Doping in NbS2-MoS2 Lateral Heterostructures Grown by MOCVD", Adv. Mater. 35, 2209371 (2023).

· Pallavie Tyagi and Sudhanshu Choudhary, "Uniaxial strain engineered MoS2 (molybdenite) and chlorine adsorbed MoS2 nanostructures for tuning their electronic and optical properties", Opt. Quantum Electron. 55, 748 (2023). 

· John M. Cain, Xiaodong Yan, Stephanie E. Liu, Justin H. Qian, Thomas T. Zeng, Vinod K. Sangwan, Mark C. Hersam, Stanley S. Chou, and Tzu-Ming Lu, "Influence of surface adsorption on MoS2 memtransistor switching kinetics", Appl. Phys. Lett. 122, 223502 (2023). 

· Zhen Liu, Yuan Jia, Juxiang Yang, and Ruifeng Shi, "Thermal conductivity of epoxy composites modified by microspheric molybdenum disulfide", Polym. Bull. 80, 10895-10906 (2023).

· Yun Wei, Ting-Yu Chen, Zhi-Xin Bai, Zheng-Tang Liu, and Qi-Jun Liu, "S-Site Substitution Effects on the Structural and Electronic Properties by O, Se, and Te in Monolayer MoS2: First-Principles Calculations", Moscow Univ. Phys. Bull. 78, 376-380 (2023).

· Banat Gul , Muhammad Salman Khan , Bashir Ahmad , Mostafizur Rahaman , Paride O. Lolika , Guenez Wafa and Hijaz Ahmad, "First-principles study of the electronic, optical, and transport properties of novel transition-metals dichalcogenides", Mater. Adv. 4, 4204-4215 (2023).

· Souvick Chakraborty and Satyabrata Raj, "Tunable nonlinear anisotropic Rashba splitting in monolayer transition metal dichalcogenide MoS2(1-x)Se2x alloys", Phys. Rev. B 108, 165402 (2023).

· Minseon Gu, Keun Wook Lee, Beomjin Park, Beom Soo Joo, Young Jun Chang, Dong-Wook Park, Moonsup Han, "Photoresponsivity Enhancement of Monolayer MoS2 by Silicon Quantum Dots", Phys. Status Solidi RRL 17, 2300220 (2023).

· Banat Gul, Fayz-Al-Asad, Muhammad Salman Khan, Mostafizur Rahaman, Govindasami Periyasami, and Hijaz Ahmad, "Insight into the Optoelectronic Nature and Mechanical Stability of Binary Chalcogenides: A First-Principles Study", ChemElectroChem 10, e202300368 (2023). 

· Chayan Das, Ashok Kumar, Suresh Kumar, Neha V. Dambhare, Mahesh Kumar, Arup K. Rath, and Satyajit Sahu, "Photogating induced high sensitivity and speed from heterostructure of few-layer MoS2 and reduced graphene oxide-based photodetector", Phys. Chem. Chem. Phys. 25, 30419-360427 (2023).

· Banat Gul, Muhammad Salman Khan, Abdelhay Salah Mohamed, Guenez Wafa, and Hijaz Ahmad, "Unveiling the electronic structure and optical properties of two-dimensional TMDCs: first-principles study", Opt. Mater. Express 13, 3688-3702 (2023).

· Mukta Vinayak Limaye, Monidipa Pramanik, Shalini Badola, Pradosh Kumar Sahoo, Shashi B. Singh, Surajit Saha, Amit Khare, Anukul Thakur, and Adarsh Kumar Dash, "Strain and charge doping effect in MoS2 sheets decorated with AgFeO2 particles", J. Raman Spectrosc. 54, 1416-1422 (2023). 

2024 {17}

· Patrick Recum and Thomas Hirsch, "Graphene-based chemiresistive gas sensors", Nanoscale Adv. 6, 11-31 (2024).

· Yafei Zhao, Miaomiao Tang, and Liang He, "Transition metal (Mn, Fe, Co, Ni) and nitrogen co-doping for improving the photocatalytic activity of monolayer MoS2", Mol. Catal. 553, 113785 (2024).

· Benjamin Spetzler, Dilara Abdel, Frank Schwierz, Martin Ziegler, and Patricio Farrell, "The Role of Vacancy Dynamics in Two-Dimensional Memristive Devices", Adv. Electron. Mater. 10, 2300635 (2024). See also:  arXiv:2304.06527.

· Yang Wang and Maciej Dendzik, "Recent progress in angle-resolved photoemission spectroscopy", Meas. Sci. Technol. 35, 042002 (2024).

· Qing Liu, Silin Cui, Renji Bian, Er Pan, Guiming Cao, Wenwu Li, and Fucai Liu, "The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications", ACS Nano 18, 1778-1819 (2024).

· Hamid Mehdipour and Peter Kratzer, "First-principles calculations of MoSeTe/WSeTe bilayers: Stability, phonons, electronic band offsets, and Rashba splitting", Phys. Rev. B 109, 085425 (2024). See also: arXiv:2307.11839.

· Zhiyong Yin, Xili Jing, Kaifeng Li, and Zhibing Zhang, "SPR Dual-Parameter Sensor With Ag/MoS2 Composite Film for Refractive Index Detection in High-Temperature Environment", IEEE Sens. J. 24, 6159-6165 (2024).

· Jiamin Wang, Fang Cheng, Yan Sun, Hai Xu, and Liang Cao, "Stacking Engineering in Layered Homostructures: Transitioning From 2D to 3D Architectures", Phys. Chem. Chem. Phys. 26, 7688-8012 (2024).

· Li-Ting Zhang, Li-Xin Xia, Xian-Feng Yu, Sheng Zhou, Yu Lan, Gui-Fang Huang, Wangyu Hu, and Wei-Qing Huang, "Electric-field-controlled Schottky Barriers in BSe/M2CF2 (M = Ta, W) van der Waals heterostructures: a computational study", Micro Nanostructures 191, 207842 (2024).

· Jinxin Zan, Huan Wang, Bairui Tao, Xiaojie Liu, Yin Wang, and Haitao Yin, "Strong hybridization of Nb2C with MoS2: a way to reduce contact resistance", J. Phys. D: Appl. Phys. 57, 325103 (2024).

· Biyang Sun, Peilin Wang, Zihui Liang, Zhenrun Li, and Qiang Ma, "MoS2/MXene Van der Waals heterojunction-based electrochemiluminescence sensor for triple negative breast cancer detection", Talanta 277, 126343 (2024).

· Duxing Xie, Fengzhen Yang, Xu Qiu, Yuhao Hu, Yi Sun, Shuang He, and Xiufeng Wang, "The impact of S vacancies on the modulation of the work function and Schottky barrier at the Au/MoS2 interface", J. Appl. Phys. 135, 235105 (2024).

· The-Hung Mai, Huy-Binh Do, Long Duy Pham, Thien Xuan Phan, Wei-Zhi Chen, Liang-Wei Lan, Hung-Ju Lin, Van-Hung Nguyen, Chung-Li Dong, Alagarsamy S. K. Kumar, Ahmed F. M. El-Mahdy, Hyeonseok Lee, Dinh Khoi Dang, Dai-Viet N. Vo, Li-Wei Tu, Chien-Cheng Kuo, Hung-Duen Yang, and Phuong V. Pham, "Efficient photoanode with a MoS2/TiO2/Au nanoparticle heterostructure for ultraviolet-visible photoelectrocatalysis", Nanotechnology 35, 385703 (2024).

· Chun-Liang Lai, Riya Karmakar, Yu-Ming Tsao, Song-Cun Lu, Arvind Mukundan, Ping-Hung Liu, and Hsiang-Chen Wang, "Fabrication of MoS2 nanoparticle dispersions using ultrasonic methods: synthesis techniques and optical characterization", Opt. Mater. Express 14, 2003-2016 (2024).

· Reshma Sinha and Jasdeep Kaur, "Enhanced Transport Parameters of Transition Metal Dichalcogenide-Based Double-Barrier Magnetic Tunnel Junction", J. Elect. Mater. 53, 5505-5518 (2024).

· Nga Vu, Parham Heidarzadeh, and Pai-Yen Chen, "Plasmonic metagrating-interlayer semiconductor (PMIS) structure for enhancing photodetection via hot-electron injection", Opt. Express 32, 33974-33983 (2024).

· Dilara Abdel, Maxime Herda, Martin Ziegler, Claire Chainais-Hillairet, Benjamin Spetzler, and Patricio Farrell, "Numerical analysis and simulation of lateral memristive devices: Schottky, ohmic, and multi-dimensional electrode models", arXiv:2412.15065 (2024).

2025 {8}

· Foysal Kabir Tareq, Md Iftekher Hossain, and Souman Rudra, "Phase transformation and electronic structure modulation of 1T-MoS2 with electronegative non-metal doping as anode material for enhanced potassium-ion battery", J. Energy Chem. 103, 735-748 (2025).

· Zhengang An, Lei Zhang, Yanyun Fan, Qingtong Li, and Dachao Li, "A comprehensive review of TMR current sensors for smart grids: Materials, optimization methods, and applications", Sens. Actuators A: Phys. 382, 116174 (2025).

· Abhay Kumar Singh, "Basics of TMDs (Book Chapter)", 2D Transition-Metal Dichalcogenides (TMDs): Fundamentals and Application (Editors: Abhay Kumar Singh), pp. 1-65 (2025) (Springer Singapore).

· Benjamin Spetzler, Vinod K. Sangwan, Mark C. Hersam, and Martin Ziegler, "High-throughput numerical modeling of the tunable synaptic behavior in 2D MoS2 memristive devices", npj 2D Mater. Appl. 9, 17 (2025).

· Donghyeon Moon, Sunghyun Kim, Jaehun Lim, Xiaoqin Li, and Suenne Kim, "A Unified Understanding of Nanoscale Friction for Common van der Waals Materials", J. Phys. Chem. C 129, 9562-9571 (2025).

· Benjamin Spetzler, Elizaveta Spetzler, Saba Zamankhani, Dilara Abdel, Patricio Farrell, Kai-Uwe Sattler, and Martin Ziegler, "Physics-Guided Sequence Modeling for Fast Simulation and Design Exploration of 2D Memristive Devices", arXiv:2505.13882 (2025).

· Yuan Shang, Yu-Qiang Wu, Sani Abdulkarim, and Meng-Tao Sun, "Enhancement of thermoelectric performance of the transition metal dichalcogenides materials by a specific pressure", Rare Metals 44, 5703-5714 (2025).

· Zhixing Wen, Jiangang Chen, Qirui Zhang, Ge Wang, Xuemei Wang, Fan Yang, Qing Liu, Xiao Luo, and Fucai Liu, "2D Van Der Waals Ferroelectric Materials and Devices for Neuromorphic Computing", Small 21, 2412761 (2025).

· Guan-Qing Shu, Xiao-Dong Chen, and Jian-Wen Dong, "Interlayer-coupling-induced tunable topological phase transition in bilayer photonic crystals", J. Opt. Soc. Am. B 42, 1845-1851 (2025).

· Limi Chen, Chunmeng Liu, Kaito Kanahashi, Jiali Hu, Kosuke Nagashio, and Yoshifumi Oshima, "In-situ TEM study of MoS2 conductance modulated by indirect electron beam gate", Jpn. J. Appl. Phys. 64, 085001 (2025).

· A. Ouahdani, R. Takassa, A. E. Mouncharih, F. Elfatouaki, O. Farkad, S. Hassine, O. Choukri, E. A. Ibnouelghazi, and D. Abouelaoualim, "Electronic and Optical Properties of Zr-, Zr-N-doped 2D MoS2 Using First-Principle Study", Jordan J. Phys. 18, 113-122 (2025).

· Wen-Jie Shi, Chuan-Lu Yang, Xiaohu Li, Yuliang Liu, Wenkai Zhao, and Feng Gao, "Enhanced Z-scheme photocatalytic water splitting in g-C3N4 monolayers via out-of-plane doping and heterostructure design", Phys. Rev. Applied 24, 054073 (2025).

· Dilara Abdel, Maxime Herda, Martin Ziegler, Claire Chainais-Hillairet, Benjamin Spetzler, and Patricio Farrell, "Numerical analysis and simulation of lateral memristive devices: Schottky, ohmic, and multi-dimensional electrode models", Comput. Math. Appl. 199, 286-308 (2025).

2026 {2}

· Gaochen Yang, Chenlong Ma, Langlang Xu, Wenhao Shi, Xinyu Huang, Mingjun Sun, Ming Bi, Xiao He, Xiaohan Meng, Shengjie Lyu, Weijia Lin, Min He, Lei Tong, and Lei Ye, "Integration and applications of two-dimensional materials", Acta Phys. Sin. 75, 010808 (2026). (written in Chinese)

· Zhenyu Wang, Zhiwei Yao, Tan Luo, Jing Zhang, Ruoyu Zhong, Zheng Zhu, Yuming Chen, Jianzhou Lu, Yiou Huang, Le Zheng, Mengjiao Li, Lei Zhang, and Jianhua Zhang, "Wafer-scale P-type MoS2 monolayers achieved via controllable niobium doping in metal-organic chemical vapor deposition", Commun. Mater., accepted (2026).