PERSONAL
· Won Seok Yun, Ph. D
· Current Position: Researcher (Permanent Position)
· Affiliation: Division of Nanotechnology, Convergence Research Institute, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 333 Techno Jungang Daero, Hyeonpung-Eup, Dalseong-Gun, Daegu 42988, Republic of Korea.
· TEL: +82-53-785-3444, FAX: +82-53-785-3439
· Primary E-mail: wsyun@dgist.ac.kr, Additional E-mail: wsyun.at.dgist@gmail.com
· ORCiD: 0000-0002-6710-9807, Google Scholar, and publons
· National Researcher Number: 11127302
EDUCATION
· March, 2006 ~ February, 2011
Doctor of Philosophy (in Physics), University of Ulsan (UOU), Republic of Korea. (Adviser: Prof. Soon Cheol Hong).
· March, 2004 ~ February, 2006
Master of Science (in Physics), University of Ulsan (UOU), Republic of Korea. (Adviser: Prof. Soon Cheol Hong).
· March, 1997 ~ February, 2004
Bachelor of Science (in Physics), University of Ulsan (UOU), Republic of Korea.
EXPERIENCE
· July, 2019 ~ Present
Researcher in Division of Nanotechnology, Convergence Research Institute, DGIST.
Next-Generation Semiconductor Research (NSR) Team
· April, 2019 ~ July, 2019
Researcher in Intelligent Devices and Systems Research Group, Convergence Research Institute, DGIST.
· November, 2016 ~ March, 2019
Research Fellow in Department of Emerging Materials Science (EMS), DGIST.
· January, 2016 ~ October, 2016
Visiting Research Professor in Department of Emerging Materials Science (EMS), DGIST.
· October, 2014 ~ December, 2015
Post-doctoral Researcher in Department of Emerging Materials Science (EMS), DGIST.
· May, 2013 ~ September, 2014
Post-doctoral Fellow in Center for X-ray Optics (CXRO), Lawrence Berkeley National Laboratory (LBNL) in USA.
also in DGIST-LBNL Joint Research Center, DGIST in Republic of Korea.
· January, 2013 ~ April, 2013
Post-doctoral Researcher in Department of Emerging Materials Science (EMS), DGIST.
· March, 2011 ~ December, 2012
Post-doctoral Researcher in Computational Metallurgy Lab (CML), Graduate Institute of Ferrous Technology (GIFT), POSTECH.
· March, 2004 ~ December, 2010
Teaching Assistant and Part-Time Lecturer in University of Ulsan.
· July, 1998 ~ September, 2000
Military Service as a Private
The Republic of Korea Army.
AWARDS & CERTIFICATE OF QUALIFICATION
· May, 2012
The Best Poster Presentation Award in The KMS.
· April, 2012
The Best Poster Presentation Award in The KPS.
· October, 2010
The Grand Poster Presentation Award in The KPS.
· June, 2010
The Best Oral Presentation Award in The KPS (Busan·Ulsan·Gyeongnam Branch).
· December, 2009
The Best Poster Presentation Award in The KPS (Busan·Ulsan·Gyeongnam Branch).
· March, 2004
The 2nd Class Middle Teacher Qualification Certificate.
RESEARCH PROJECTS (Ongoing) / (Past)
· "Basic Res. on Sci. & Technol. Leadership" through the DGIST R&D program
Grant No. : 25-ET-02
Title (Kor) : 미래 모빌리티용 나노기반 핵심소재 개발
Title : Development of nanotechnology-based core materials for future mobility
Role : Co-I; (PI: Dr. Seok-Hwan Chung)
Period (participating) : January, 2024 ~ Present
· "Next-Generation Intelligent Semiconductor Technology Development Project" through the Ministry of Science and ICT
Grant No. : 2021M3F3A2A010375
Title (Kor) : 다기능 캐스케이드 스핀 논리 소자 제작 공정 개발
Title : Multi functional cascadable spin logic process development
Role : Co-I; (PI: Dr. June-Seo Kim)
Period (participating) : January, 2025 ~ December, 2025
SELECTED PUBLICATIONS
· "A promising high temperature 2D thermoelectric material: novel single-layer ZrHfS4"
W. S. Yun, S. W. Han*, H.-J. Lee, J.-S. Kim, and M.-J. Lee*, Phys. Chem. Chem. Phys. 26, 26330−26336 (2024). (first author) [IF: 2.9] {1}
· "Thermoelectric performance of novel single-layer ZrTeSe4"
W. S. Yun, H.-J. Lee, J.-S. Kim, M.-J. Lee*, and S. W. Han*, Phys. Chem. Chem. Phys. 24, 28250−28256 (2022). (first author) [IF: 2.9] {3}
· "Single-layer CdPSe3: A promising thermoelectric material persisting in high temperatures"
W. S. Yun and J. D. Lee*, Appl. Phys. Lett. 115, 193105 (2019). (first author) [IF: 3.5] {20}
· "Exploring a Novel Atomic Layer with Extremely Low Lattice Thermal Conductivity: ZnPSe3 and Its Thermoelectrics"
W. S. Yun and J. D. Lee*, J. Phys. Chem. C 122, 27917−27924 (2018). (first author) [IF: 3.3] {25}
· "Two-dimensional semiconductors ZrNCl and HfNCl: Stability, electric transport, and thermoelectric properties"
W. S. Yun and J. D. Lee*, Sci. Rep. 7, 17330 (2017). (first author) [IF: 3.8] {39}
· "Schottky barrier tuning of the single-layer MoS2 on magnetic metal substrates through vacancy defects and hydrogenation"
W. S. Yun and J. D. Lee*, Phys. Chem. Chem. Phys. 18, 31027−31032 (2016). (first author) [IF: 2.9] {7}
· "Strain-Induced Magnetism in Single-Layer MoS2: Origin and Manipulation"
W. S. Yun and J. D. Lee*, J. Phys. Chem. C 119, 2822−2827 (2015). (first author) [IF: 3.3] {84}
· "Unexpected strong magnetism of Cu doped single-layer MoS2 and its origin"
W. S. Yun and J. D. Lee*, Phys. Chem. Chem. Phys. 16, 8990−8996 (2014). (first author) [IF: 2.9] {114}
· "Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2 semiconductors (M = Mo, W; X = S, Se, Te)"
W. S. Yun, S. W. Han*, S. C. Hong*, I. G. Kim, and J. D. Lee, Phys. Rev. B 85, 033305 (2012). (first author) [IF: 3.2] {1241}
· "Twist-Induced Dimensional Crossover and Topological Phase Transitions in Bismuthene Quasicrystals"
S. W. Han†,*, W. S. Yun†, G.-B. Cha, et al. Chem. Mater. 37, 2358−2366 (2025). (†co-first author) [IF: 7.2] {0}
· "Hidden Direct Bandgap of Bi2O2Se by Se Vacancy and Enhanced Direct Bandgap of Bismuth Oxide Overlayer"
S. W. Han†,*, W. S. Yun†, S. Seong, et al. J. Phys. Chem. Lett. 15, 1590−1595 (2024). (†co-first author) [IF: 4.8] {7}
· "Large electrostrictive response via tailoring ergodic relaxor state in Bi1/2Na1/2TiO3-based ceramics with Bi(Mn1/2Ce1/2)O3 end-member"
N. U. Khan†, W. S. Yun†, A. Ullah*, et al., Ceram. Int. 50, 8790−8799 (2024). (†co-first author) [IF: 5.1] {11}
· "Strain-induced dark exciton generation in rippled monolayer MoS2"
S. Y. Lee†, W. S. Yun†, and J. D. Lee*, Phys. Chem. Chem. Phys. 25, 9894−9900 (2023). (†co-first author) [IF: 2.9] {2}
· "Hole doping effect of MoS2 via electron capture of He+ ion irradiation"
S. W. Han†,*, W. S. Yun†, H. Kim, et al., Sci. Rep. 11, 23590 (2021). (†co-first author) [IF: 3.8] {14}
· "Interface Defect Engineering of a Large-Scale CVD-Grown MoS2 Monolayer via Residual Sodium at the SiO2/Si Substrate"
S. W. Han†,*, W. S. Yun†, W. J. Woo, et al., Adv. Mater. Interfaces 8, 2100428 (2021). (†co-first author) [IF: 4.3] {24}
· "Thermally driven homonuclear-stacking phase of MoS2 through desulfurization"
Y. H. Hwang†, W. S. Yun†, G.-B. Cha, S. C. Hong*, and S. W. Han*, Nanoscale 11, 11138−11144 (2019). (†co-first author) [IF: 5.8] {3}
· "New Method to Determine the Schottky Barrier in Few-Layer Black Phosphorus Metal Contacts"
S. Y. Lee†, W. S. Yun†, and J. D. Lee*, ACS Appl. Mater. Interfaces 9, 7873−7877 (2017). (†co-first author) [IF: 8.3] {17}
· "Hydrogenation-induced atomic stripes on the 2H-MoS2 surface"
S. W. Han†, W. S. Yun†, J. D. Lee*, et al., Phys. Rev. B 92, 241303(R) (2015). (†co-first author) [IF: 3.2] {35}
· "Optical Absorption of Armchair MoS2 Nanoribbons: Enhanced Correlation Effects in the Reduced Dimension"
J. Kim†, W. S. Yun†, and J. D. Lee*, J. Phys. Chem. C 119, 13901−13906 (2015). (†co-first author) [IF: 3.3] {21}
· "Giant Rashba-type splitting in molybdenum-driven bands of MoS2/Bi(111) heterostructure"
K. Lee†, W. S. Yun†, and J. D. Lee*, Phys. Rev. B 91, 125420 (2015). (†co-first author) [IF: 3.2] {57}
· "Ultrafast above-transition-temperature resurrection of spin density wave driven by coherent phonon generation in BaFe2As2"
J. D. Lee*, W. S. Yun*, and S. C. Hong, New J. Phys. 16, 043010 (2014). (*co-corr. author) [IF: 2.8] {6}
PEER REVIEWER ACTIVITIES
· Since 2011
IOP: 2D Mater., Nanotechnoloty, J. Phys.:Conden. Mattter, J. Phys. D: Appl. Phys., Phys. Scr., and Mater. Res. Express
AIP: Appl. Phys. Lett. and J. Appl. Phys.
ACS: J. Phys. Chem. Lett.
Elsevier: J. Phys. Chem. Solids, Comput. Mater. Sci., Curr. Appl. Phys., Physica-B, Vacuum, Mater. Today Commun., Solid State Commun., Mater. Sci. Semicond. Process., and Appl. Surf. Sci.
KPS: J. Korean Phys. Soc.
KMS: J. Magn. and J. Korean Magn. Soc
NPG: Sci. Rep.
MDPI: Crystals, Materials, and Nanomaterials