Citing Articles

2018 {5}

· Hao Yuan and Zhenyu Li, "Interfacial properties of black phosphorus/transition metal carbide van der Waals heterostructures", Front. Phys. 13, 138103 (2018). See also: arXiv:1802.03508.

· Bei Jiang, Xuming Zou, Jie Su, Jinghua Liang, Jingli Wang, Huijun Liu, Liping Feng, Changzhong Jiang, Feng Wang, Jun He, and Lei Liao, "Impact of Thickness on Contact Issues for Pinning Effect in Black Phosphorus Field-Effect Transistors", Adv. Funct. Mater. 28, 1801398 (2018).

· Yang Liu, Yang Wang, Muhammad Ikram, He Lv, Jingbo Chang, Zhengkang Li, Laifeng Ma, Afrasiab Ur Rehman, Ganhua Lu, Junhong Chen, and Keying Shi, "Facile Synthesis of Highly Dispersed Co3O4 Nanoparticles on Expanded, Thin Black Phosphorus for a ppb-Level NOx Gas Sensor", ACS Sens. 3, 1576-1583 (2018).

· Honglin Li, Yuting Cui, Dongmei Li, and Haijun Luo, "Tuning the band alignment of p-type graphene-AsSb Schottky contact by electric field", J. Appl. Phys. 124, 204301 (2018).

· Fan Gong, Feng Wu, Mingsheng Long, Fansheng Chen, Meng Su, Zhenyu Yang, and Jing Shi, "Black Phosphorus Infrared Photodetectors with Fast Response and High Photoresponsivity", Phys. Status Solidi RRL 12, 1800310 (2018).

2019 {2}

· Qinglong Fang, Xumei Zhao, Yu Hong Huang, Kewei Xu, Tai Min, and Fei Ma, "Junction-configuration-dependent interfacial electronic states of monolayer MoS2/metal contact", J. Mater. Chem. C 7, 3607-3616 (2019).

· Pengfei Ou, Xiao Zhou, Cheng Chen, Fanchao Meng, Yiqing Chen, and Jun Song, "Reduction of Fermi level pinning at Cu-BP interfaces by atomic passivation", Nanoscale 11, 11569-11576 (2019).

2020 {4}

· Cheng Li, Kuanchen Xiong, Lei Li, Qiushi Guo, Xiaolong Chen, Asher Madjar, Kenji Watanabe, Takashi Taniguchi, James C. M. Hwang, and Fengnian Xia, "Black Phosphorus High-Frequency Transistors with Local Contact Bias", ACS Nano 14, 2118-2125 (2020).

· Xiaohong Jiang, Sichen Qin, Yi Cao, Rong Wu, Dongqiang Han, Zhenghe Hua, Chao Zhu, Xiao Huang, Lin Wang, and Shaoguang Yang, "Stable One-Dimensional Single Crystalline Black Phosphorus Nanowires for Gas Sensing", ACS Appl. Nano Mater. 3, 3402-3409 (2020).

· Francesca Telesio, Gwenael le Gal, Manuel Serrano-Ruiz, Federico Prescimone, Stefano Toffanin, Maurizio Peruzzini, and Stefan Heun, "Ohmic contact engineering in few-layer black Phosphorus: approaching the quantum limit", Nanotechnology 31, 334002 (2020). See also: arXiv:1905.05649.

· Guo-Hong Chen, Yi-Nuo Chen, Yan-Wei Zhou, Yun-Lei Sun, and En-Jia Ye, "Strain and electric field tunable electronic transport in armchair phosphorene nanodevice with normal-metal electrodes", AIP Adv. 10, 105012 (2020).

2021 {1}

· Zhaoyi Yan, Guangyang Gou, Jie Ren, Fan Wu, Yang Shen, He Tian, Yi Yang, and Tian-Ling Ren, "Ambipolar transport compact models for two-dimensional materials based field-effect transistors", Tsinghua Sci. Technol. 26, 574-591 (2021).

2023 {2}

· H. Rezania, M. Abdi, E. Nourian, and B. Astinchap, "Effects of spin–orbit coupling on transmission and absorption of electromagnetic waves in strained armchair phosphorene nanoribbons", RSC Adv. 13, 22287-22301 (2023).

· Qiaona Liu, Xin Han, An Qian, Xin Pu, Lei Ye, Pengpeng Liu, Fengqi Zhang, and Jichang Liu, "Noble-metal-free dual CuNi single-atom embedded in ultrathin ZnIn2S3 for efficient photocatalytic H2 evolution", Mol. Catal. 550, 113620 (2023).

2024 {2}

· Zhihong Chen, Na Li, Wendi Zhao, Mengting Liu, Zuzhi Bai, Congcong Liu , Peipei Liu, Fengxing Jiang, Jingkun Xu, and Qinglin Jiang, "Layer-by-Layer Assembled Flexible MXene/TiS2 Composite Films for Thermoelectric Applications", Energy Mater. Adv. 5, 0102 (2024).

· Wenchao Shan, Anqi Shi, Zhuorong Zhong, Xiuyun Zhang, Bing Wang, Yongtao Li, and Xianghong Niu, "sp2 to sp3 hybridization transformation in 2D metal-semiconductor contact interface suppresses tunneling barrier and Fermi level pinning simultaneously", Nano Res. 17, 10227-10234 (2024).

2025 {1}

· Kalyan B. Chavan, Maruti V. Salve, Shweta Chaure, and Nandu B. Chaure, "CZTS based novel bifunctional photovoltaic and self-powered photodetection nano system", J. Semicond., accepted (2025).