Embedded Files
RESEARCH INTERESTS AND GALLERY
· New Physical & Chemical Properties of 2D TMDCs and Layered Materials
· Ultrafast Dynamics & Attosecond Science: A Combined DFT and Many-Body Approach
· Magnetic Properties of Transition Metal Compounds and Semiconductors
· Physical and Chemical Properties of Novel Functional Materials
· First-Principles Calculations: FLAPW and VASP Code
· New Physical & Chemical Properties of 2D TMDCs and Layered Materials
Related Publications:
Twist-Induced Dimensional Crossover and Topological Phase Transitions in Bismuthene Quasicrystals, Chem. Mater. 37, 2358-2366 (2025).
A promising high temperature 2D thermoelectric material: novel single-layer ZrHfS4, Phys. Chem. Chem. Phys. 26, 26330-26336 (2024).
Hidden Direct Bandgap of Bi2O2Se by Se Vacancy and Enhanced Direct Bandgap of Bismuth Oxide Overlayer, J. Phys. Chem. Lett. 50, 1590-1595 (2024).
Strain-induced dark exciton generation in rippled monolayer MoS2, Phys. Chem. Chem. Phys. 25, 9894−9900 (2023).
Thermoelectric performance of novel single-layer ZrTeSe4, Phys. Chem. Chem. Phys. 24, 28250−28256 (2022).
Multilayer WSe2/MoS2 Heterojunction Phototransistors through Periodically Arrayed Nanopore Structures for Bandgap Engineering, Adv. Mater. 34, 2108412 (2022).
Hole doping effect of MoS2 via electron capture of He+ ion irradiation, Sci. Rep. 11, 23590 (2021).
Interface Defect Engineering of a Large-Scale CVD-Grown MoS2 Monolayer via Residual Sodium at the SiO2/Si Substrate, Adv. Mater. Interfaces 8, 2100428 (2021). See also: Inside Back Cover 8, 2170080 (2021).
Measurement of Exciton and Trion Energies in Multi-Stacked hBN/WS2 Coupled Quantum Wells for Resonant Tunneling Diodes, ACS Nano 14, 16114−16121 (2020).
Graphene-mediated coherent light lasing from CsPbI3 perovskite nanorods, Nano Energy 70, 104497 (2020).
Single-layer CdPSe3: A promising thermoelectric material persisting in high temperatures, Appl. Phys. Lett. 115, 193105 (2019).
Thermally driven homonuclear-stacking phase of MoS2 through desulfurization, Nanoscale 11, 11138−11144 (2019). See also: Back cover 11, 11381−11382 (2019).
Transient SHG Imaging on Ultrafast Carrier Dynamics of MoS2 Nonosheet, Adv. Mater. 30, 1705190 (2018). See also: Fontispiece 30, 1870099 (2018).
Exploring a Novel Atomic Layer with Extremely Low Lattice Thermal Conductivity: ZnPSe3 and Its Thermoelectrics, J. Phys. Chem. C 122, 27917−27924 (2018).
A stacking-controllable interlayer coupling and symmetric configuration of multilayered MoS2, NPG Asia Mater. 10, e468 (2018).
Local Strain Induced Band Gap Modulation and Photoluminescence Enhancement of Multilayer Transition Metal Dichalcogenides, Chem. Mater. 29, 5124−5133 (2017).
Two-dimensional semiconductors ZrNCl and HfNCl: Stability, electric transport, and thermoelectric properties, Sci. Rep. 7, 17330 (2017).
New Method to Determine the Schottky Barrier in Few-Layer Black Phosphorus Metal Contacts, ACS Appl. Mater. Interfaces 9, 7873−7877 (2017).
Schottky barrier tuning of the single-layer MoS2 on magnetic metal substrates through vacancy defects and hydrogenation, Phys. Chem. Chem. Phys. 18, 31027−31032 (2016).
Hydrogenation-induced atomic stripes on the 2H-MoS2 surface, Phys. Rev. B 92, 241303(R) (2015).
Optical Absorption of Armchair MoS2 Nanoribbons: Enhaced Correlation Effects in the Reduced Dimension, J. Phys. Chem. C 119, 13901−13906 (2015).
Giant Rashba-type splitting in molybdenum-driven bands of MoS2/Bi(111) heterostructure, Phys. Rev. B 91, 125420 (2015).
Strain-Induced Magnetism in Single-Layer MoS2: Origin and Manipulation, J. Phys. Chem. C 119, 2822-2827 (2015).
Unexpected strong magnetism of Cu doped single-layer MoS2 and its origin, Phys. Chem. Chem. Phys. 16, 8990-8996 (2014).
Controlling Ferromagnetic Easy Axis in a Layered MoS2 Single Crystal, Phys. Rev. Lett. 110, 247201 (2013).
Bandgap expansion in the surface-localized electronic structure of MoS2 (0002), Phys. Rev. B. 86, 115105 (2012).
Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2 semiconductors (M = Mo, W; X = S, Se, Te), Phys. Rev. B 85, 033305 (2012).
Band-gap transition induced by interlayer van der Waals interaction in MoS2, Phys. Rev. B 84, 045409 (2011).
· Ultrafast Dynamics & Attosecond Science: A Combined DFT and Many-Body Approach
Related Publications:
Rectifying the Optical-Field-Induced Current in Dielectrics: Petahertz Diode, Phys. Rev. Lett. 116, 057401 (2016).
Ultrafast above-transition-temperature resurrection of spin density wave driven by coherent phonon generation in BaFe2As2, New J. Phys. 16, 043010 (2014).
· Magnetic Properties of Transition Metal Compounds and Semiconductors
Related Publications:
Magnetocrystalline anisotropy of pure magnetic semiconductors of MnGeP2 and MnGeAs2: A first-principles study, J. Magn. Magn. Mater. 419, 202−209 (2016).
A first-principles study of magnetostriction of Fe3O4 and CoFe2O4, J. Appl. Phys. 115, 17A916 (2014).
Strong perpendicular magnetocrystalline anisotropy of bulk and the (001) surface of DO22 Mn3Ga: A density functional study, J. Phys.: Condens. Matter 24, 416003 (2012).
Electronic origin of the negligible magnetostriction of an electric steel Fe1-xSix alloy: A density-functional study, J. Appl. Phys. 111, 063911 (2012).
Magnetocrystalline Anisotropy of Zinc-Blende CrTe (001) Surface: A First-Principles Study, Thin Solid Films 519, 8355-8358 (2011).
Engineering of magnetostriction in Fe3Pt1-xIrx by controlling Ir concentration, Appl. Phys. Lett. 98, 152502 (2011).
Electron mediated/enhanced ferromagnetism in a hydrogen-annealed Mn:Ge magnetic semiconductor, J. Appl. Phys. 109, 063912 (2011).
Giant magnetostriction of Fe1-xBex alloy: A first principles study, Phys. Rev. B 79, 054419 (2009).
· Physical and Chemical Properties of Novel Funtional Materials
Related Publications:
Mapping the low tolerance factror Bi(Li1/3Zr2/3)O3 end member and MPB composition nexus in Bi1/2Na1/2TiO3-based ceramics, Chem. Eng. J. 485, 150087 (2024).
Large electrostrictive response via tailoring ergodic relaxor state in Bi1/2Na1/2TiO3-based ceramics with Bi(Mn1/2Ce1/2)O3 end-member, Ceram. Int. 50, 8790-8799 (2024).
Thickness-Dependent Phonon Renormalization and Enhanced Raman Scattering in Ultrathin Silicon Nanomembranes, Nano Lett. 17, 7744-7750 (2017).
Multiple Coordination Exchange for Room-Temperature Activation of Open-Metal Sites in Metal-Organic Frameworks, ACS Appl. Mater. Interfaces 9, 24743−24752(2017).
A Chemical Route to Activation of Open Metal Site in the Copper-Based Metal-Organic Framework Materials HKUST-1 and Cu-MOF-2, J. Am. Chem. Soc. 137, 10009−10015 (2015).
A ruthenium complex as a single-component redox shuttle for electrochemical photovoltaics, Chem. Commun. 51, 7745−7748 (2015).
The trapping of N2 molecules and the reduction in its bonding length in Ge(001) due to N2+ ion implantation, J. Appl. Phys. 109, 124316 (2011).
· First-Principles Calculations: FLAPW and VASP Code
Page updated
Google Sites
Report abuse