Citing Articles

2015 {3}

· Ai-Ming Hu, Ling-ling Wang, Wen-Zhi Xiao, and Bo Meng, "Electronic structures and magnetic properties in Cu-doped two-dimensional dichalcogenides", Physica E 73, 69-75 (2015).

· Jongmin Kim, Won Seok Yun, and J. D. Lee, "Optical Absorption of Armchair MoS2 Nanoribbons: Enhanced Correlation Effects in the Reduced Dimension", J. Phys. Chem. C 119, 13901-13906 (2015).

· Zhenping Chen, Junjie He, Pan Zhou, Jiao Na, and L. Z. Sun, "Strain control of the electronic structures, magnetic states, and magnetic anisotropy of Fe doped single-layer MoS2", Comput. Mater. Sci. 110, 102-108 (2015).

2016 {10}

· Babu Ram, Aaditya Manjanath, and Abhishek K. Singh, "Simultaneous tunability of the electronic and phononic gaps in SnS2 under normal compressive strain", 2D Mater. 3, 015009 (2016). See also: arXiv:1509.05999v1.

· Kezhao Du, Xingzhi Wang, Yang Liu, Peng Hu, M. Iqbal Bakti Utama, Chee Kwan Gan, Qihua Xiong, and Christian Kloc, "Weak Van der Waal Stacking, Wide-Range Band Gap and Raman Study on Ultrathin Layers of Metal Phosphorus Trichalcogenides", ACS Nano 10, 1738-1743 (2016).

· Lei Ao, Anh Pham, Haiyan Xiao, Xiaotao Zu, and Sean Li, "Engineering the electronic and magnetic properties of d0 2D dichalcogenide materials through vacancy doping and lattice strains", Phys. Chem. Chem. Phys. 18, 7163-7168 (2016).

· Dipankar Saha and Santanu Mahapatra, "Theoretical insights on the electro-thermal transport properties of monolayer MoS2 with line defects", J. Appl. Phys. 119, 134304 (2016).

· Jie Su, Liping Feng, and Zhengtang Liu, "Heterostructure consists of monolayer MoS2 and arsenene with novel electronic and optical conductivity", RSC Adv. 6, 59633-59638 (2016).

· Alexander V. Kolobov and Junju Tominaga, "Magnetism in 2D TMDC (Book Chapter)", Two-Dimensional Transition-Metal Dichalcogenides 239, p. 365-388 (2016) (Spinger Int'l Publishing).

· Soyoung Jekal and Soon Cheol Hong, "First-principles Calculation on Magnetism of 1H/1T Boundary in Monolayer MoS2", J. Korean Magn. Soc. 26, 71-75 (2016) (written in Korean).

· Chuanyu Zhao, Chuanhong Jin, Jianlan Wu, and Wei Ji, "Magnetism in molybdenum disulphide monolayer with sulfur substituted by 3d transition metals", J. Appl. Phys. 120, 144305 (2016).

· Xiao-Ou Zhang and Qing-Fang Li, "Strain-induced magnetism in ReS2 monolayer with defects", Chinese Phys. B 25, 117103 (2016).

· Won Seok Yun and J. D. Lee, "Schottky barrier tuning of the single-layer MoS2 on magnetic metal substrates through vacancy defects and hydrogenation", Phys. Chem. Chem. Phys. 18, 31027-31032 (2016).

2017 {8}

· Sizhe Yang, Junjie He, Pan Zhou, and L. Z. Sun, "Magnetic Control of Single Transition Metal Doped MoS2 Through H/F Chemical Decoration", J. Magn. Magn. Mater. 422, 243-248 (2017).

· Yiren Wang, Li-Ting Tseng, Peter P. Murmu, Nina Bao, John Kennedy, Mihail Ionesc, Jun Ding, Kiyonori Suzuki, Sean Li, and Jiabao Yi, "Defects engineering induced room temperature ferromagnetism in transition metal doped MoS2", Mater. Design 121, 77-84 (2017).

· Wei Li, Tianxing Wang, Xianqi Dai, Yaqiang Ma, and Yanan Tang, "Effects of electric field on the electronic structures of MoS2/arsenene van der Waals heterostructure", J. Alloys Compd. 705, 486-491 (2017).

· Hongxing Li, Min Huang, and Gengyu Cao, "Magnetic properties of atomic 3d transition-metal chains on S-vacancy-line templates of monolayer MoS2: effects of substrate and strain", J. Mater. Chem. C 5, 4557-4564 (2017).

· Yuan Ping Feng, Lei Shen, Ming Yang, Aizhu Wang, Minggang Zeng, Qingyun Wu, Sandhya Chintalapati, and Ching-Ray Chang, "Prospects of spintronics based on 2D materials", WIREs Comput. Mol. Sci. 7, e1313 (2017).

· C. Nethravathi, Janak Prabhu, S. Lakshmipriya, and Michael Rajamathi, "Magnetic Co-Doped MoS2 Nanosheets for Efficient Catalysis of Nitroarene Reduction", ACS Omega 2, 5891-5897 (2017).

· Keat Hoe Yeoh, Tiem Leong Yoon, Duu Sheng Ong, Thong Leng Lim, and Abdullahi Magaji Yusufu, "First-principles studies on the effects of halogen adsorption on monolayer antimony", Phys. Chem. Chem. Phys. 19, 25786-25795 (2017).

· Wenzhou Chen, Hai-Feng Li, Xingqiang Shi, and Hui Pan, "Tension-tailored electronic and magnetic switching of 2D Ti2NO2", J. Phys. Chem. C 121, 25729-25735 (2017).

2018 {8}

· Aolin Li, Jiangling Pan, Zhixiong Yang, Lin Zhou, Xiang Xiong, and Fangping Ouyang, "Charge and strain induced magnetism in monolayer MoS2 with S vacancy", J. Magn. Magn. Mater. 451, 520-525 (2018).

· Xing Li, Mei Sun, Chongxin Shan, Qing Chen, and Xianlong Wei, "Mechanical Properties of 2D Materials Studied by In Situ Microscopy Techniques", Adv. Mater. Interfaces 5, 1701246 (2018).

· P. Taivansaikhan, T. Tsevelmaa, S. H. Rhim, S. C. Hong, and D. Odkhuu, "Inducing and manipulating magnetization in two-dimensional zinc-oxide by strain and external voltage", J. Phys.: Conden. Matter 30, 145802 (2018).

· Xuejun Xing, Xinwei Wang, Chen Wu, Yunhao Lu, and Mi Yan, "Room temperature ferromagnetism and its origin for amorphous MoSe2 nanoflowers", Appl. Phys. Lett. 112, 122407 (2018).

· Zahir Muhammad, Haifeng Lv, Chuanqiang Wu, Muhammad Habib, Zia ur Rehman, Rashid Khan, Shuangming Chen, Xiaojun Wu, and Li Song, "Room temperature ferromagnetism in Fe-doped semiconductors ZrS2 single crystals", Mater. Res. Express 5, 046110 (2018).

· Gang Hee Han, Dinh Loc Duong, Dong Hoon Keum, Seok Joon Yun, and Young Hee Lee, "van der Waals Metallic Transition Metal Dichalcogenides", Chem. Rev. 118, 6297-6336 (2018).

· Gi Wan Jeon, Kyu Won Lee, and Cheol Eui Lee, "Ferromagnetism in monolayer MoS2 dictated by hydrogen adsorption sites and concentration", Physica E 104, 309-313 (2018).

· Sivan Refaely-Abramson, Diana Y. Qiu, Steven G. Louie, and Jeffrey B. Neaton, "Defect-Induced Modification of Low-Lying Excitons and Valley Selectivity in Monolayer Transition Metal Dichalcogenides", Phys. Rev. Lett. 121, 167402 (2018). See also: arXiv:1804.05719.

2019 {5}

· Zhen Lin, Hui Yan, Jiwen Liu, and Yukai An, "Defects engineering monolayer MoSe2 magnetic states for 2D spintronic device", J. Alloys Compd. 774, 160-167 (2019).

· James T. Gibbon and Vinod R. Dhanak, "Properties of Transition Metal Dichalcogenides (Book Chapter)", Two Dimensional Transition Metal Dichalcogenides (Editors: N. S. Arul and V. D. Nithya), Chapter 3, pp. 69-106 (2019) (Springer).

· Wei Hu, Hao Tan, Hengli Duan, Guinan Li, Na Li, Qianqian Ji, Ying Lu, Yao Wang, Zhihu Sun, Fengchun Hu, Chao Wang, and Wensheng Yan, "Synergetic Effect of Substitutional Dopants and Sulfur Vacancy in Modulating the Ferromagnetism of MoS2 Nanosheets", ACS Appl. Mater. Interfaces 11, 31155-31161 (2019).

· Eunsung Jekal and Dao Phuong, "Magnetism and Magnetocystalline Anisotropy of Localized 1H/1T by S Atom Sliding", Preprints 2019110291 (2019)

· Hongtao Ren, Gang Xiang, Jiating Lu, Xi Zhang, and Lei Zhang, "Biaxial Strain-Mediated Room Temperature Ferromagnetism of ReS2 Web Buckles", Adv. Electron. Mater. 5, 1900814 (2019).

2020 {11}

· K. H. Yeoh, K.-H. Chew, T. L. Yoon, Rusi, and D. S. Ong, "Strain-tunable electronic and magnetic properties of two-dimensional gallium nitride with vacancy defects", J. Appl. Phys. 127, 015305 (2020).

· Asma Bouarissa, Abdelhamid Layadi, and Hager Maghraoui-Meherzi, "Experimental study of the diamagnetism and the ferromagnetism in MoS2 thin films", Appl. Phys. A 126, 93 (2020).

· Bao Wang, Daoyu Zhang, Hong Wang, Huihui Zhao, Ruobai Liu, Qi Li, Shengqiang Zhou, Jun Du, and Qingyu Xu, "Enhanced room temperature ferromagnetism in MoS2 by N plasma treatment", AIP Adv. 10, 015243 (2020).

· Mohammad Bahmani, Mahdi Faghihnasiri, Michael Lorke, Agnieszka-Beata Kuc, Thomas Frauenheim, "Electronic Properties of Defective MoS2 Monolayers Subject to Mechanical Deformations: A First-Principles Approach", Phys. Solidi Status B 257, 1900541 (2020). See also: arXiv:1904.12706.

· Anwar Ali, Jian-Min Zhang, Iltaf Muhammad, Xiu-Mei Wei, Iqtidar Ahmad, and Majeed Ur Rehman, "Changing the Electronic and Magnetic Properties of Monolayer HfS2 by Doping and Vacancy Defects: Insight from First-Principles Calculations", Phys. Solidi Status B 257, 1900768 (2020).

· Taylan Gorkan, Erol Vatansever, Ümit Akinci, Gökhan Gökoglu, Ethem Aktürk, and Salim Ciraci, "Above Room Temperature Ferromagnetism in Gd2B2 Monolayer with High Magnetic Anisotropy", J. Phys. Chem. C 23, 12816-12823 (2020).

· Zhen Lin, Bin Fu, and Yukai An, "Effects of defects and anions on the geometry, electronic structures and exchange interaction of Fe-doped 2H-MoSe2 monolayer", Appl. Surf. Sci. 528, 146960 (2020).

· Mukhtar Lawan Adam, Oyawale Adetunji Moses, Zia ur Rehman, Zhanfeng Liu, Li Song, and Xiaojun Wu, "Band gap engineering of monolayer ZrGeTe4 via strain: A first-principles study", Mater. Chem. Phys. 253, 123308 (2020).

· Geeta Sharma, Shraddha M. Rao, Bhanu Pratap Singh, and Parinda Vasa, "Optically tunable charge carrier injection in monolayer MoS2", Appl. Phys. A 126, 663 (2020).

· Agnes Mahmoud and Céline Dupont, "Enhancing α-Fe2O3(0001) surfaces reactivity through lattice-strain control", Appl. Surf. Sci. 534, 147605 (2020).

· Anand B. Puthirath, Sharmila N. Shirodkar, Guanhui Gao, Francisco C. Robles Hernandez, Liangzi Deng, Rabin Dahal, Amey Apte, Gelu Costin, Nithya Chakingal, Aravind Puthirath Balan, Lucas M. Sassi, Chandra Sekhar Tiwary, Robert Vajtai, Ching-Wu Chu, Boris I. Yakobson, and Pulickel M. Ajayan, "Scale-Enhanced Magnetism in Exfoliated Atomically Thin Magnetite Sheets", Small 16, 2004208 (2020).

2021 {9}

· Ananias B. Alencar, Alan B. de Oliveira, and Helio Chacham, "Crystal reorientation and plastic deformation of single-layer MoS2 and MoSe2 under uniaxial stress", J. Phys: Condens. Matter 33, 125401 (2021).

· H. Khalatbari, S. Izadi Vishkayi, M. Oskouian, and H. Rahimpour Soleimani, "Band structure engineering of NiS2 monolayer by transition metal doping", Sci. Rep. 11, 5779 (2021).

· Shengxue Yang, Yujia Chen, and Chengbao Jiang, "Strain engineering of two‐dimensional materials: Methods, properties, and applications", InfoMat 3, 397-420 (2021).

· Sonali Kakkar, Akariti Sharma, and Chandan Bera, "Electronic, magnetic, and topological properties of layered ternary chalcogenide CoAsS: A first principles study", J. Magn. Magn. Mater. 536, 168133 (2021).

· Akinobu Yamaguchi, Atsufumi Hirohata, and Bethanie J.H. Stadler, "Chapter 6 - Promising prospects of novel magnetism (Book Chapter)", Nanomagnetic Materials Fabrication Characterization and Application (Editors: Akinobu Yamaguchi, Atsufumi Hirohata, and Bethanie J.H. Stadler), p. 425-471 (2021) (Elsevier).

· Ravinder Pawar and Akanksha Ashok Sangolkar, "Density functional theory based HSE06 calculations to probe the effects of defect on electronic properties of monolayer TMDCs", Comput. Theor. Chem. 1205, 113445 (2021).

· Shoujian Wu, Aolin Li, Yunpeng Wang, and Fangping Ouyang, "Half-metallicity and Curie temperature enhancement of CrI3 through boron atoms adsorption", Superlattice Microst. 159, 107054 (2021).

· Haifei Qin, Jiao Chen, Bai Sun, Yongliang Tang, Yuxiang Ni, Zhongfang Chen, Hongyan Wang, and Yuanzheng Chen, "2D Auxetic Material with Intrinsic Ferromagnetism: Copper Halide (CuCl2) Monolayer", Phys. Chem. Chem. Phys. 23, 22078-22085 (2021).

· Mohammad Bahmani, Michael Lorke, Mahdi Faghihnasiri, and Thomas Frauenheim, "Reversibly Tuning the Optical Properties of Defective Transition-Metal Dichalcogenide Monolayers", Phys. Status Solidi B 258, 200524 (2021).

2022 {10}

· Jia-Wen Li, Sha-Sha Ke, Hong-Xiang Deng, Xu Sun, Yong Guo, and Hai-Feng Lü, "Defect modulated electronic structure and magnetism in the 1T’ phase of Janus MoSSe", Chem. Phys. 555, 111440 (2022).

· Akanksha Ashok Sangolkar, Pooja,Mohmmad Faizan, Rubi Agrawal, and Ravinder Pawar, "Density functional theory study of graphene adhesion on WX2 (X = S and Se) monolayer: Role of atom vacancy and atomic reorganization defects", Int. J. Quantum Chem. 122, e26871 (2022).

· Iltaf Muhammad, Anwar Ali, Liguo Zhou, Wen Zhang, and Ping Kwan Johnny Wong, "Vacancy-engineered half-metallicity and magnetic anisotropy in magnetic CrSI semiconductor monolayer", J. Alloys Compd. 909, 164797 (2022).

· Mengying Liu, Weijie Li, Dan Cheng, Xuan Fang, Hongbin Zhao, Dengkui Wang, Jinhua Li, Yingjiao Zhai, Jie Fan, Haizhu Wang, Xiaohua Wang, Dan Fang, and Xiaohui Ma, "Strain engineering of lateral heterostructures based on group-V enes (As, Sb, Bi) for infrared optoelectronic applications calculated by first principles", RSC Adv. 12, 14578-14585 (2022).

· Hongtao Ren and Gang Xiang, "Strain-Modulated Magnetism in MoS2", Nanomaterials 12, 1929 (2022).

· Akash Singh, Christopher C. Price, and Vivek B. Shenoy, "Magnetic Order, Electrical Doping, and Charge-State Coupling at Amphoteric Defect Sites in Mn-Doped 2D Semiconductors", ACS Nano 16, 9452-9460 (2022).

· Lin Xue, Chaoyu He, Zhi Yang, Zhiyi Zhang, Li-Chun Xu, Xiaopeng Fan, Longlong Zhang, and Lingzhen Yang, "Strains induced magnetic hysteresis in MoS2 and WS2 monolayers with symmetric double sulfur vacancy defects", Phys. Chem. Chem. Phys. 24, 17263-17270 (2022).

· Sekhar Chandra Ray, "Electronic, microstructure, and magnetic performances in MoS2-nanoparticles", Appl. Phys. A 128, 834 (2022).

· Rosy Rahman, Saumen Chaudhuri, Dipanjan Samanta, Amita Pathak, and Tapan Kumar Nath, "Insights into the multifunctional applications of strategical Co doped MoS2 nanoflakes", Mater. Adv. 3, 8740-8759 (2022).

· Gopal Sanyal and Brahmananda Chakraborty, "Chapter 2. Structure and Properties of Metallic TMDs (Book Chapter)", 2D Metallic Transition Metal Dichalcogenides: Fundamentals and Applications (Editors: Brahmananda Chakraborty and Chandra Sekhar Rout), (2022) (Nova Science Publishers).

2023 {5}

· Luiz Claudio de Carvalho, Rodrigo Santos da Lapa, Simone Sliva Alexandre, and Ricardo Wagner Nunes, "Structural and thermodynamic properties of quasi-2D Mo(1-x)Wx(S, Se, Te)2 monolayer alloys: A statistical first principle study", Nanotechnology 34, 275704 (2023).

· Chunyan Xu and Jing Zhang, "Effects of vacancy defects on the electronic and magnetic properties of monolayer CrOCl", Phys. Scr. 98, 105929 (2023). 

· Julienne Impundu, Tariq Abbas, Balla Diop Ngom, and Sabir Hussain, "Recent Progress in Ferromagnetism of Two- Dimensional Materials", Peer Rev. J. Sol. Photoen. Sys. 2, 1 (2023). 

· JunJie Ni, Lu Yang, and Jinlin Bao, "Electronic and optical structural manipulation of NbS2 defects under strain: first-principles calculations", J. Mole. Model. 29, 341 (2023). 

· Haiming Deng, Qianqian Zhu, Chao Kong, Guixian Tang, Jun Cao, Tao Han, Chunzhi Jiang, and Yi Peng, "Tunable the electronic and magnetic properties of monolayer Mo8S12 via defects and 3d transition metal substitutional doping", J. Magn. Magn. Mater. 588, 171385 (2023).

2024 {9}

· Junjie Ni, Lu Yang, and Shu Chen, "Effects of transition metal doping on the photoelectric effect of monolayer NbS2 under strain: First-principles calculations", Mod. Phys. Lett. B 38, 2450001 (2024).

· G. Anushya, M. Benjamin, R. Sarika, J. Charles Pravin, R. Sridevi, and D. Nirmal, "A review on applications of molybdenum disulfide material: Recent developments", Micro and Nanostructures 186, 207742 (2024).

· Valery Ortiz Jimenez, Yen Thi Hai Pham, Da Zhou, Mingzu Liu, Florence Ann Nugera, Vijaysankar Kalappattil, Tatiana Eggers, Khang Hoang, Dinh Loc Duong, Mauricio Terrones, Humberto Rodriguez Gutiérrez, and Manh-Huong Phan, "Transition Metal Dichalcogenides: Making Atomic-Level Magnetism Tunable with Light at Room Temperature", Adv. Sci. 11, 2304792 (2024). See also: arXiv:2305.01026. 

· Da Zhou, Yen Thi Hai Pham, Diem Thi-Xuan Dang, David Sanchez, Aaryan Oberoi, Ke Wang, Andres Fest, Alexander Sredenschek, Mingzu Liu, Humberto Terrones, Saptarshi Das, Dai-Nam Le, Lilia M. Woods, Manh-Huong Phan, and Mauricio Terrones, "Vanadium-Doped Molybdenum Disulfide Monolayers with Tunable Electronic and Magnetic Properties: Do Vanadium-Vacancy Pairs Matter?", arXiv:2401.16806 (2024).

· Thasneem Aliyar, Hongyang Ma, Radha Krishnan, Gagandeep Singh, Bi Qi Chong, Yitao Wancg, Ivan Verzhbitskiy, Calvin Pei Yu Wong, Kuan Eng Johnson Goh, Ze Xiang Shen, Teck Seng Koh, Rajib Rahman, and Bent Weber, "Symmetry Breaking and Spin-Orbit Coupling for Individual Vacancy-Induced In-Gap States in MoS2 Monolayers", Nano Lett. 24, 2142-2148 (2024). See also: arXiv:2402.01193.

· Junqiu An, Jiao Chen, Xiaotao Zhang, Hongyan Wang, Yongliang Tang, Yuxiang Ni, Yuan Ping Feng, Lei Shen, Haiyan Lu, and Yuanzheng Chen, "Data-Driven Accelerating the Discovery of Hole-Doping Induced 2d Magnets", SSRN.4747647 (2024).

· Rohini Sanikop, Bidisha Priyadarsini Jena, Vikasmita Samanta, and C. Sudakar, "Ferromagnetism in Two-Dimensional TMD Materials via Doping, Phase Transition and Defect Engineering (Book Chapter)", Handbook of Materials Science, Volume 2 (Editors: Raghumani S. Ningthoujam, A. K. Tyagi), pp. 487-588 (2024) (Springer Singapore).

· Sharmistha Dey, Ankita Phutela, Saswata Bhattacharya, Fouran Singh, Pankaj Srivastava, and Santanu Ghosh, "Enhanced Room-Temperature Ferromagnetism in Nanostructured MoS2 Flakes by Hydrogen Post-Treatment: Combined Experimental and First-Principles Based Studies", ACS Appl. Nano Mater. 7, 25693-25705 (2024). See also: arXiv:2409.01187.

· Shahzad Akhtar Ali, Bilal Ahmed, Ahsan Javed, M. Usman Muzaffar, Afsar Bano, and Ata Ulhaq, "Room temperature polarization-resolved Raman and photoluminescence in uniaxially strained layered MoS2", Appl. Phys. Lett. 125, 231902 (2024). 

2025 {6}

· Sharmistha Dey, Pankaj Srivastava, Ankita Phutela, Saswata Bhattacharya, Fouran Singh, and Santanu Ghosh, "Synergetic effect of edge states and point defects to tune ferromagnetism in CVD-grown vertical nanostructured MoS2: A correlation between electronic structure and theoretical study", J. Alloys Compd. 1010, 177845 (2025). See also: arXiv:2406.09721.

· Ajit Kumar Katiyar and Jong-Hyun Ahn, "Strain-Engineered 2D Materials: Challenges, Opportunities, and Future Perspectives", Small Methods 9, 2401404 (2025).

· Sharmistha Dey, Pankaj Srivastava, and Santanu Ghosh, "Morphology-Controlled Robust Room Temperature Ferromagnetism in Chemical Vapor Deposition Grown Nanostructured MoS2", J. Phys. Chem. C 129, 7912-7920 (2025).

· Sharmistha Dey, Nahid Chaudhary, Ulrich Kentsch, Rajendra Singh, Pankaj Srivastava, and Santanu Ghosh, "Highly Enhanced robust room temperature ferromagnetism in CVD-grown nano-dimensional MoS2 flakes by modifying edges and defect engineering", arXiv.2505.20695 (2025).

· Diem Thi-Xuan Dang, Yen Thi-Hai Pham, Da Zhou, Dai-Nam Le, Mauricio Terrones, Manh-Huong Phan, and Lilia M. Woods, "Interface magnetism in vanadium-doped MoS2/graphene heterostructures", RSC Appl. Interfaces 2, 1650-1660 (2025).

· Vikasmita Samanta, Sayan Ghosh, Shubhalakshmi Sahu, Birabar Ranjit Kumar Nanda, and Chandran Sudakar, "Enhanced Magnetization of MoS2 Nanosheets through the MoSxOy Interphase via Controlled Oxidation: Implications for Spintronics Applications", ACS Appl. Nano Mater. 8, 22186-22205 (2025).

2026 {1}

· Zainab Chowdhry, Kushal Mazumder, Praveen Hegde, Ajit K. Jena, Vidya Praveen Bhallamudi, and Pramoda K. Nayak, "Unlocking High Coercivity at Room Temperature in Phase Modified MoS2", Small, accepted (2026). See also: arXiv.2507.04905.