Schottky barrier tuning of the single-layer MoS2 on magnetic metal substrates through vacancy defects and hydrogenation
Schottky barrier tuning of the single-layer MoS2 on magnetic metal substrates through vacancy defects and hydrogenation
Citing Articles
2018 {1}
· Peiyu Chen, Wenshuo Xu, Yakun Gao, Jamie H. Warner, and Martin R. Castell, "Epitaxial Growth of Monolayer MoS2 on SrTiO3 Single Crystal Substrates for Applications in Nanoelectronics", ACS Appl. Nano Mater. 1, 6976-6988 (2018).
2019 {1}
· Kai Zhang, Lu Wang, and Xiaojun Wu, "Spin polarization and tunable valley degeneracy in MoS2 monolayer via proximity coupling to Cr2O3 substrate", Nanoscale 11, 19536-19542 (2019).
2020 {1}
· Maciej Bieniek, Ludmiła Szulakowska, and Paweł Hawrylak, "Effect of valley, spin, and band nesting on the electronic properties of gated quantum dots in a single layer of transition metal dichalcogenides", Phys. Rev. B 101, 035401 (2020). See also: arXiv:1907.09512.
2021 {1}
· Xu Li, Yuanzheng Xia, Junfeng Hou, Wei Lin, Ting Chen, Yaping Wu, Zhiming Wu, and Junyong Kang, "Engineering sulfur vacancies in WS2/Au interface toward ohmic contact", Appl. Phys. A 127 644 (2021).
2022 {1}
· Viacheslav Sorkin, Hangbo Zhou, Zhi Gen Yu, Kah-Wee Ang, and Yong-Wei Zhang, "The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS2 heterojunction: a first-principles study", Sci. Rep. 12, 18001 (2022).
2023 {1}
· Hangbo Zhou, Viacheslav Sorkin, Shuai Chen, ZhiGen Yu, Kah-Wee Ang, and Yong-Wei Zhang, "Design-Dependent Switching Mechanisms of Schottky-Barrier-Modulated Memristors based on 2D Semiconductor", Adv. Elect. Mater. 9, 2201252 (2023).
2024 {1}
· Hangbo Zhou, Sifan Li, Kah-Wee Ang, and Yong-Wei Zhang, "Recent Advances in In-Memory Computing: Exploring Memristor and Memtransistor Arrays with 2D Materials", Nano-Micro Lett. 16, 121 (2024).