Citing Articles

2012 {12}

· Priya Johari and Vivek B. Shenoy, "Tuning the Electronic Properties of Semiconducting Transition Metal Dichalcogenides by Applying Mechanical Strains", ACS Nano 6, 5449-5459 (2012).

· Qu Yue, Shengli Chang, Jun Kang, Xueao Zhang, Zhengzheng Shao, Shiqiao Qin, and Jingbo Li, "Bandgap tuning in armchair MoS2 nanoribbon", J. Phys.: Condens. Matter 24, 335501 (2012).

· Sang Wook Han, Gi-Beom Cha, Emmanouil Frantzeskakis, Ivy Razado-Colambo, José Avila, Yong S. Park, Daehyun Kim, Jihoon Hwang, Jeong Soo Kang, Sunmin Ryu, Won Seok Yun, Soon Cheol Hong, and Maria C. Asensio, "Bandgap expansion in the surface-localized electronic structure of MoS2 (0002)", Phys. Rev. B 86, 115105 (2012).

· Liangzhi Kou, Chun Tang, Yi Zhang, Thomas Heine, Changfeng Chen, and Thomas Frauenheim, "Tuning Magnetism and Electronic Phase Transitions by Strain and Electric Field in Zigzag MoS2 Nanoribbons", J. Phys. Chem. Lett. 3, 2934-2941 (2012).

· Yungang Zhou, Zhiguo Wang, Ping Yang, Xiaotao Zu, Li Yang, Xin Sun, and Fei Gao, "Tensile Strain Switched Ferromagnetism in Layered NbS2 and NbSe2", ACS Nano 6, 9727-9736 (2012).

· Sefaattin Tongay, Jian Zhou, Can Ataca, Kelvin Lo, Tyler S. Matthews, Jingbo Li, Jeffrey C. Grossman, and Junqiao Wu, "Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2", Nano Lett. 12, 5576-5580 (2012).

· Ji Feng, Xiaofeng Qian, Cheng-Wei Huang, and Ju Li, "Strain-engineered artificial atom as a broad-spectrum solar energy funnel", Nature Photonics 6, 866-872 (2012).

· Stefano Larentis, Babak Fallahazad, and Emanuel Tutuc, "Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers", Appl. Phys. Lett. 101, 223104 (2012).

· J. T. Ye, Y. J. Zhang, R. Akashi, M. S. Bahramy, R. Arita, and Y. Iwasa, "Superconducting Dome in a Gate-Tuned Band Insulator", Science 338, 1193-1196 (2012).

· Arend van der Zande and James Hone, "Optical materials: Inspired by strain", Nature Photonics 6, 804-806 (2012).

· H. Peelaers and C. G. Van de Walle, "Effects of strain on band structure and effective masses in MoS2", Phys. Rev. B 86, 241401(R) (2012).

· David Jiménez, "Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors", Appl. Phys. Lett. 101, 243501 (2012). See also: arXiv:1207.3057v1.

2013 {61}

· Huaihong Guo, Teng Yang, Peng Tao, Yong Wang, and Zhidong Zhang, "High pressure effect on structure, electronic structure, and thermoelectric properties of MoS2", J. Appl. Phys. 113, 013709 (2013). See also: arXiv:1208.5941v1.

· Weijie Zhao, Zohreh Ghorannevis, Leiqiang Chu, Minglin Toh, Christian Kloc, Ping-Heng Tan and Goki Eda, "Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2", ACS Nano 7, 791-797 (2013).

· Mingsheng Xu, Tao Liang, Minmin Shi, and Hongzheng Chen, "Graphene-Like Two-Dimensional Materials", Chem. Rev. 113, 3766-3798 (2013).

· Jun Kang, Sefaattin Tongay, Jian Zhou, Jingbo Li, and Junqiao Wu, "Band offsets and heterostructures of two-dimensional semiconductors", Appl. Phys. Lett. 102, 012111 (2013).

· Akihiro Inoue, Takahiro Komori, and Ken-ichi Shudo, "Atomic-scale structures and electronic states of defects on Ar+-ion irradiated MoS2", J. Electron Spectrosc. Relat. Phenom. 1895, 11-18 (2013).

· Wu Mu-Sheng, Xu Bo, Liu Gang, and Ouyang Chu-Ying, "First-principles study on the electronic structures of Cr- and W-doped single-layer MoS2", Acta Phys. Sin. 62, 037103 (2013) (written in Chinese).

· Philipp Tonndorf, Robert Schmidt, Philipp Bottger, Xiao Zhang, Janna Borner, Andreas Liebig, Manfred Albrecht, Christian Kloc, Ovidiu Gordan, Dietrich R. T. Zahn, Steffen Michaelis de Vasconcellos, and Rudolf Bratschitsch, "Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2", Opt. Express 21, 4908-4916 (2013).

· Sheneve Z. Butler, Shawna M. Hollen, Linyou Cao, Yi Cui, Jay A. Gupta, Humberto R. Gutierrez, Tony F. Heinz, Seung Sae Hong, Jiaxing Huang, Ariel F. Ismach, Ezekiel Johnston-Halperin, Masaru Kuno, Vladimir V. Plashnitsa, Richard D. Robinson, Rodney S. Ruoff, Sayeef Salahuddin, Jie Shan, Li Shi, Michael G. Spencer, Mauricio Terrones, Wolfgang Windl, and Joshua E. Goldberger, "Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene", ACS Nano 7, 2898-2926 (2013).

· S. Horzum, H. Sahin, S. Cahangirov, P. Cudazzo, A. Rubio, T. Serin, and F. M. Peeters, "Phonon Softening and Direct to Indirect Bandgap Crossover in Strained Single Layer MoSe2", Phys. Rev. B 87, 125415 (2013). See also: arXiv:1302.6635v1.

· Wen Huang, Haixia Da, and Gengchiau Liang, "Thermoelectric performance of MX2 (M=Mo,W; X=S,Se) monolayers", J. Appl. Phys. 113, 104304 (2013).

· Hongliang Shi, Hui Pan, Yong-Wei Zhang, and Boris I. Yakobson, "Quasiparticle band structures and optical properties of strained monolayer MoS2 and WS2", Phys. Rev. B 87, 155304 (2013). See also: arXiv:1211.5653v1.

· Qu Yue, Shengli Chang, Shiqiao Qin, and Jingbo Li, "Functionalization of monolayer MoS2 by substitutional doping: A first-principles study", Phys. Lett. A 377, 1362-1357 (2013).

· Ashok Kumar and P. K. Ahluwalia, "Mechanical strain dependent electric and dielectric properties of two-dimentional honeycomb structures of MoX2 (X=S, Se, Te)", Physica B 419, 66-75 (2013).

· Junwen Li, Nikhil V. Medhekar, and Vivek B. Shenoy, "Bonding Charge Density and Ultimate Strength of Monolayer Transition Metal Dichalcogenides", J. Phys. Chem. C 117, 15842-15848 (2013). See also: arXiv:1303.7259v1.

· Jun Kang, Sefaattin Tongay, Jingbo Li, and Junqiao Wu, "Monolayer semiconducting transition metal dichalcogenide alloys: Stability and band bowing", J. Appl. Phys. 113, 143703 (2013).

· Houlong L. Zhyang, Arunima K. Singh, and Richard G. Henning, "Computational discovery of single-layer III-V materials", Phys. Rev. B 87, 165415 (2013).

· Yungang Zhou, Ping Yang, Haoyue Zu, Fei Gao, and Xiaotao Zu, "Electronic structures and magnetic properties of MoS2 nanostructures: atomic defect, nanohole, nanodot and antidot", Phys. Chem. Chem. Phys. 15, 10385-10394 (2013).

· Sefaattin Tongay, Jian Zhou, Can Ataca, Jonathan Liu, Jeong Seuk Kang, Tyler S. Matthews, Long You, Jingbo Li, Jeffrey C. Grossman, and Junqiao Wu, "Broad-Range Modulation of Light Emission in Two-Dimensional Semiconductors by Molecular Physisorption Gating", Nano Lett. 13, 2831-2836 (2013).

· Seyed Mohammad Tabatabaei, Maziar Noei, Kaveh Khaliji, Mahdi Pourfath, and Morteza Fathipour, "A first-principles study on the effect of biaxial strain on the ultimate performance of monolayer MoS2-based double gate field effect transistor", J. Appl. Phys. 113, 163708 (2013).

· Mohammed Aziz Ibrahem, Tian-Wey Lan, Jing-Kai Huang, Yang-Yuan Chen, Kung-Hwa Wei, Lain-Jong Li, and Chih Wei Chu, "High Quantity and Quality Few-Layers Transition Metal Disulfides Nanosheets from Wet-Milling Exfoliation", RSC Adv. 3, 13193-13202 (2013).

· Gang Liu, Mu Sheng Wu, Chu Ying Ouyang, and Bo Xu, "Strain-Tunable Band Gap of BC3 Sheet: A First-Principles Investigation", Mod. Phys. Lett. B 27, 1350110 (2013).

· Keliang He, Charles Poole, Kin Fai Mak, and Jie Shan, "Experimental Demonstration of Continuous Electronic Structure Tuning via Strain in Atomically Thin MoS2", Nano Lett. 13, 2931-2936 (2013). See Also: arXiv:1305.3673v1.

· Zhi-Xiong Yang, Jin-Xin Yang, Qi Liu, Yu-Xing Xie, Xiang Xiong, Fang-Ping Ouyang, "Electronic Structure and Edge Modification of Armchair MoS2 Nanoribbons", Acta Phys.-Chim. Sin. 29, 1648-1654 (2013) (written in Chinese).

· Sang Wook Han, Younghun Hwang, Seon-Ho Kim, Won Seok Yun, J. D. Lee, Min Gyu Park, Sunmin Ryu, Ju Sang Park, Dae-Hwang Yoo, Sang-Pil Yoon, Soon Cheol Hong, Kwang. S. Kim, and Young S. Park, "Controlling Ferromagnetic Easy Axis in a Layered MoS2 Single Crystal", Phys. Rev. Lett. 110, 247201 (2013).

· Georgios A. Tritsaris, Brad D. Malone, and Efthimios Kaxiras, "Optoelectronic properties of single-layer, double-layer and bulk tin sulfide: a theoretical study", J. Appl. Phys. 113, 233507 (2013).

· C. Espejo, T. Rangel, A. H. Romero, X. Gonze, and G.-M. Rignanese, "Band structure tunability in MoS2 under interlayer compression: A DFT and GW study", Phys. Rev. B 87, 245114 (2013).

· Mahdi Ghorbani-Asl, Stefano Borini, Agnieszka Kuc, and Thomas Heine, "Strain-dependent modulation of conductivity in single layer transition-metal dichalcogenides", Phys. Rev. B 87, 235434 (2013). See also: arXiv:1301.3469v1.

· Yungang Zhou, Chengfei Yang, Xia Xian,g and Xiaotao Zu, "Remarkable Magnetism and Ferromagnetic Coupling in Semi-sulfuretted Transition-metal Dichalcogenides", Phys. Chem. Chem. Phys. 15, 14202-14209 (2013).

· Alejandro Molina-Sánchez, Davide Sangalli, Kerstin Hummer, Andrea Marini, and Ludger Wirtz, "Effect of spin-orbit interaction on the optical spectra of single-layer, double-layer and bulk MoS2", Phys. Rev. B 88, 045412 (2013). See also: arXiv:1306.4257v1.

· Andor Kormányos, Viktor Zólyomi, Neil D. Drummond, Péter Rakyta, Guido Bukard, and Vladmir I. Fal'ko, "Monolayer MoS2: Trigonal warping, the Γ valley, and spin-orbit coupling effects", Phys. Rev. B 88, 045416 (2013).

· Goki Eda and Stefan A. Maier, "Two-Dmensional Crystals: Managing Light for Optoelectronics", ACS Nano 7, 5660-5665 (2013).

· Cheng Gong, Hengji Zhang, Weihua Wang, Luigi Colombo, Robert M. Wallace, and Kyeongjae Cho, "Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors", Appl. Phys. Lett. 103, 053513 (2013).

· Weijie Zhao, Zohreh Ghorannevis, Amara Kiran Kumar, Jing Ren Pang, Minglin Toh, Xin Zhang, Christian Kloc, Ping Heng Tan, and Goki Eda, "Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2", Nanoscale 5, 9677-9683 (2013). See also: arXiv:1304.0911v1.

· Ashok Kumar and P. K. Ahluwalia, "Semiconductor to metal transition in bilayer transition metals dichalcogenides MX2 (M = Mo, W; X = S, Se, Te)", Modelling Simul. Mater. Sci. Eng. 21, 065015 (2013).

· E. Cappelluti, R. Roldán, J. A. Silva-Guillén, P. Ordejón, and F. Guinea, "Tight-binding model and direct-gap/indirect-gap transition in single-layer and multi-layer MoS2", Phys. Rev. B 88, 075409 (2013). See also: arXiv:1304.4831v1.

· Kapildeb Dolui, Ivan Rungger, Chaitanya Das Pemmaraju, and Stefano Sanvito, "Possible doping strategies for MoS2 monolayers: An ab initio study", Phys. Rev. B 88, 075420 (2013). See also: arXiv:1304.8056v1.

· Alberto Ubaldini, Jacim Jacimovic, Nicolas Ubrig, and Enrico Giannini, "Chloride-Driven Chemical Vapor Transport Method for Crystal Growth of Transition Metal Dichalcogenides", Cryst. Growth Des. 13, 4453-4459 (2013).

· Hannu-Pekka Komsa and Arkady V. Krasheninnikov, "Electronic structure and optical properties of realistic transition metal dichalcogenide heterostructures", Phys. Rev. B 88, 085318 (2013). See also: arXiv:1308.5061v1.

· Gui-Bin Liu, Wen-Yu Shan, Yugui Yao, Wang Yao, and Di Xiao, "Three-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides", Phys. Rev. B 88, 085433 (2013). See also: arXiv:1305.6089v1.

· Wencan Jin, Po-Chun Yeh, Nader Zaki, Datong Zhang, Jerzy T. Sadowski, Abdullah Al-Mahboob, Arend M. van der Zande, Daniel A. Chenet, Jerry I. Dadap, Irving P. Herman, Peter Sutter, James Hone, and Richard M. Osgood, Jr., "Direct Measurement of the Thickness-Dependent Electronic Band Structure of MoS2 Using Angle-Resolved Photoemission Spectroscopy", Phys. Rev. Lett. 111, 106801 (2013).

· Saptarshi Das and Joerg Appenzeller, "WSe2 field effect transistors with enhanced ambipolar characteristics", Appl. Phys. Lett. 103, 103501 (2013).

· Yungang Zhou, Qiulei Su, Zhiguo Wang, Huiqiu Deng, and Xiaotao Zu, "Controlling Magnetism of MoS2 Sheet by Embedding Transition-metal Atoms and Applying Strain", Phys. Chem. Chem. Phys. 15, 18464-18470 (2013).

· C. R. Zhu, G. Wang, B. L. Liu, X. Marie, X. F. Qiao, X. Zhang, X. X. Wu, H. Fan, P. H. Tan, T. Amand, and B. Urbaszek, "Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2", Phys. Rev. B 88, 121301(R) (2013). See also: arXiv:1306.3442v1.

· C. K. Ghosh, D. Sarkar, M. K. Mitra, and K. K. Chattopadhyay, "Equibiaxial strain: tunable electronic structure and optical properties of bulk and monolayer MoSe2", J. Phys. D: Appl. Phys. 46, 395304 (2013).

· Tawinan Cheiwchanchamnangij, Walter R. L. Lambrecht, Yang Song, and Hanan Dery, "Strain effects on the spin-orbit induced band structure splittings in monolayer MoS2 and graphene", Phys. Rev. B 88, 155404 (2013). See also: arXiv:1308.2733v1.

· Félix Rose, M. O. Goerbig, and Frédéric Piéchon, "Spin- and valley-dependent magneto-optical properties of MoS2", Phys. Rev. B 88, 125438 (2013). See also: arXiv:1307.2884v1.

· Qing Peng and Suvranu De, "Outstanding mechanical properties of monolayer MoS2 and its application in elastic energy storage", Phys. Chem. Chem. Phys. 15, 19427-19437 (2013).

· C. N. R. Rao, H. S. S. Ramakrishna Matte, and Urmimala Maitra, "Graphene Analogues of Inorganic Layered Materials", Angew. Chem. Int. Ed. 52, 2-27 (2013).

· Mahdi Ghorbani-Asl, Nourdine Zibouche, Mohammad Wahiduzzaman, Augusto F. Oliveira, Agnieszka Kuc, and Thomas Heine, "Electromechanics in MoS2 and WS2: nanotubes vs. monolayers", Sci. Rep. 3, 2961 (2013). See also: arXiv:1308.1834v1.

· Stephen McDonnell, Barry Brennan, Angelica Azcatl, Ning Lu, Hong Dong, Creighton Buie, Jiyoung Kim, Christopher L Hinkle, Moon J Kim, and Robert M. Wallace, "HfO2 on MoS2 by Atomic Layer Deposition: Adsorption mechanisms and Thickness Scalability", ACS Nano 7, 10354-10351 (2013).

· Andrés Castellanos-Gomez, Rafael Roldán, Emmanuele Cappelluti, Michele Buscema, Francisco Guinea, Herre S. J. van der Zant, and Gary A. Steele, "Local Strain Engineering in Atomically Thin MoS2", Nano Lett. 13, 5361-5366 (2013).

· Kai Xu, Zhenxing Wang, Xiaolei Du, Muhammad Safdar, Chao Jiang, and Jun He, "Atomic-layer triangular WSe2 sheets: synthesis and layer-dependent photoluminescence property", Nanotechnology 24, 46705 (2013).

· Weijie Zhao, R. M. Ribeiro, Minglin Toh, Alexandra Carvalho, Christian Kloc, A. H. Castro Neto, and Goki Eda, "Origin of indirect optical transitions in few-layer MoS2, WS2 and WSe2", Nano Lett. 13, 5627-5634 (2013). See also: arXiv:1309.0923v1.

· Nengjie Huo, Qu Yue, Juehan Yang, Shengxue Yang, Jingbo Li, "Abnormal Photocurrent Response and Enhanced Photocatalytic Activity Induced by Charge Transfer between WS2 Nanosheets and WO3 Nanoparticles", ChemPhysChem 14, 4069-4073 (2013).

· Yan Li, Sefaattin Tongay, Qu Yue, Jun Kang, Junqiao Wu, and Jingbo Li, "Metal to semiconductor transition in metallic transition metal dichalcogenides", J. Appl. Phys. 114, 174307 (2013).

· Chung-Huai Chang, Xiaofeng Fan, Shi-Hsin Lin, and Jer-Lai Kuo, "Orbital analysis of electronic structure and phonon dispersion in MoS2, MoSe2, WS2, and WSe2 monolayers under strain", Phys. Rev. B 88, 195420 (2013).

· Jeong-Gyu Song, Jusang Park, Wonseon Lee, Taejin Choi, Hanearl Jung, Chang Wan Lee, Sung-Hwan Hwang, Jae Min Myoung, Jae-Hoon Jung, Soo-Hyun Kim, Clement Lansalot-Matras, and Hyungjun Kim, "Layer-Controlled, Wafer-Scale and Conformal Synthesis of Tungsten Disulfide Nanosheets using Atomic Layer Deposition", ACS Nano 7, 11333-11340 (2013).

· Chih-Chiang Shen, Yu-Te Hsu, Lain-Jong Li, and Hsiang-Lin Liu, "Charge Dynamics and Electronic Structures of Monolayer MoS2 Films Grown by Chemical Vapor Deposition", Appl. Phys. Express 6, 125801 (2013).

· Ram Krishna Ghosh and Santanu Mahapatra, "Monolayer Transition Metal Dichalcogenide Channel Based Tunnel Transistor", IEEE J. Electron Devices Soc. 1, 175-180 (2013).

· Qingyun Zhang, Yingchun Cheng, Li-Yong Gan, and Udo Schwingenschlögl, "Giant valley drifts in uniaxially strained monolayer MoS2", Phys. Rev. B 88, 245447 (2013).

· Rusen Yan, Simone Bertolazzi, Jacopo Brivio, Tian Fang, Aniruddha Konar, A. Glen Birdwell, N. V. Nguyen, Andras Kis, Debdeep Jena, Huili Grace Xing, "Raman and Photoluminescence Study of Dielectric and Thermal Effects on Atomically Thin MoS2", arXiv:1211.4136v2 (2013).

2014 {82}

· E. Scalisea, M. Houssa, G. Pourtois, V. V. Afanas'ev, and A. Stesmans, "First-principles study of strained 2D MoS2", Physica E 56, 416-421 (2014).

· Ashok Kumar and P. K. Ahluwalia, "Electronic Transport and Dielectric Properties of Low-Dimensional Structures of Layered Transition Metal Dichalcogenides", J. Alloys Compd. 587, 459-467 (2014).

· Xiangying Su, Ruizhi Zhang, Chongfeng Guo Meng Guo, and Zhaoyu Ren, "Quantum Wells Formed in Transition-metal Dichalcogenide Nanosheet-Superlattices: Stability and Electronic Structures from First Principles", Phys. Chem. Chem. Phys. 16, 1393-1398 (2014).

· Eugene Kadantsev, "Electronic Structure of Exfoliated MoS2", MoS2 (Editor: Zhiming M. Wang) 209, p. 37-51 (2014) (Springer International Publishing Switzerland).

· Ashok Kumar and P. K. Ahluwalia, "Tunable Electronic and Dielectric Properties of Molybdenum Disulfide", MoS2 (Editor: Zhiming M. Wang) 209, p. 53-76 (2014) (Springer International Publishing Switzerland).

· T. Korn, G. Plechinger, S. Heydrich, F.-X. Schrettenbrunner, J. Eroms, D. Weiss, and C. Schuller, "Optical Characterization, Low-Temperature Photoluminescence, and Photocarrier Dynamics in MoS2", MoS2 (Editor: Zhiming M. Wang) 209, p. 217-236 (2014) (Springer International Publishing Switzerland).

· Yanfeng Chen, Dumitru O. Dumcenco, Yiming Zhu, Xin Zhang, Nannan Mao, Qingliang Feng, Mei Zhang, Jin Zhang, Pingheng Tan, Ying-Sheng Huang, and Liming Xie, "Composition-Dependent Raman Modes of Mo1-xWxS2 Monolayer Alloys", Nanoscale 6, 2833-2839 (2014).

· Ning Lu, Hongyan Guo, Lei Li, Jun Dai, Lu Wang, Wai-Ning Mei, Xiaojun Wu, and Xiao Cheng Zeng, "MoS2/MX2 heterobilayers: Bandgap engineering via tensile strain or external electrical field", Nanoscale 6, 2879-2886 (2014). See also: arXiv:1312.2257v1.

· Jinyang Xi, Tianqi Zhao, Dong Wang, and Zhigang Shuai, "Tunable Electronic Properties of Two-Dimensional Transition Metal Dichalcogenide Alloys: A First-Principles Prediction", J. Phys. Chem. Lett. 5, 285-291 (2014).

· Xiangying Su, Ruizhi Zhang, Chongfeng Guo, Jiming Zheng, and Zhaoyu Rena, "Band engineering of dichalcogenide MX2 nanosheets (M = Mo, W and X=S, Se) by out-of-plane pressure", Phys. Lett. A 378, 745-749 (2014).

· Naoki Harada, Shintaro Sato, and Naoki Yokoyama, "Computational study on electrical properties of transition metal dichalcogenide field-effect transistors with strained channel", J. Appl. Phys. 115, 034505 (2014).

· Liang Dong, Avinash M. Dongare, Raju R. Namburu, Terrance P. O'Regan, and Madan Dubey, "Theoretical study on strain induced variations in electronic properties of 2H-MoS2 bilayer sheets", Appl. Phys. Lett. 104, 053107 (2014).

· Peng Tao, Huaihong Guo, Teng Yang, and Zhidong Zhang, "Strain-induced magnetism in MoS2 monolayer with defects", J. Appl. Phys. 115, 054305 (2014). See also: arXiv:1309.2066v1.

· Jia-He Fan, Po Gao, An-Min Zhang, Bai-Ren Zhu, Hua-Ling Zeng, Xiao-Dong Cui, Rui He, and Qing-Ming Zhang, "Resonance Raman scattering in bulk 2H-MX2 (M = Mo, W; X = S, Se) and monolayer MoS2", J. Appl. Phys. 115, 053527 (2014).

· Jiangang He, Kerstin Hummer, and Cesare Franchini, "Stacking effects on the electronic and optical properties of bilayer transition metal dichalcogenides MoS2, MoSe2, WS2, and WSe2", Phys. Rev. B 89, 075409 (2014).

· Ruma Das, Bipul Rakshit, Saikat Debnath, and Priya Mahadevan, "Microscopic model for the strain-driven direct to indirect band-gap transition in monolayer MoS2 and ZnO", Phys. Rev. B 89, 115201 (2014).

· L. Wang and M. W. Wu, "Electron spin relaxation due to D'yakonov-Perel' and Elliot-Yafet mechanisms in monolayer MoS2: Role of intravalley and intervalley processes", Phys. Rev. B 89, 115302 (2014). See also: arXiv:1312.6985v1.

· Jiwon Chang, Leonard F. Register, Sanjay K. Banerjee, "Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors", J. Appl. Phys. 115, 084506 (2014). See also: arXiv:1402.3309v1.

· J. A. Reyes-Retana, G. G. Naumis, and Felipe Cevantes-Sodi, "Centered Honeycomb NiSe2 Nanoribbons, Structure and Electronic Properties", J. Phys. Chem. C 118, 3295-3304 (2014). See also: arXiv:1307.0835v1.

· Anupama B. Kaul, "Two-dimensional layered materials: Structure, properties, and prospects for device applications", J. Mater. Res. 29, 348-361 (2014).

· Kai-Tak Lam and Jing Guo, "Frequency-dependent quantum capacitance and plasma wave in monolayer transistion metal dichalcogenides", Appl. Phys. Lett. 104, 103111 (2014).

· Mang niu, Daojian Cheng, and Dapeng Cao, "Understanding the Mechanism of Photocatalysis Enhancements in the Graphene-like Semiconductor Sheet/TiO2 Composites", J. Phys. Chem. C 118, 5954-5960 (2014).

· Hongyan Guo, Ning Lu, Lu Wang, Xiaojun Wu, and Xiao Cheng Zeng, "Tuning Electronic and Magnetic Properties of Early Transition Metal Dichalcogenides via Tensile Strain", J. Phys. Chem. C 118, 7242-7249 (2014).

· L. Wang and M. W. Wu, "Intrinsic electron spin relaxation due to the D'yakonov-Perel' mechanism in monolayer MoS2", Phys. Lett. A 378, 1336-1340 (2014). See also: arXiv:1305.3361v1.

· Shijun Zhao, Wei Kang, and Jianming Xue, "Manipulation of electronic and magnetic properties of M2C (M=Hf, Nb, Sc, Ta, Ti, V, Zr) monolayer by applying mechanical strains", Appl. Phys. Lett. 104, 133106 (2014). See also: arXiv:1401.6259v1.

· Jiwon Chang, Stefano Larentis, Emanuel Tutuc, Leonard F. Register, and Sanjay K. Banerjee, "Atomistic simulation of doping by adatoms in monolayer MoS2", Appl. Phys. Lett. 104, 141603 (2014). See also: arXiv:1305.7162v1.

· Yongqing Cai, Gang Zhang, and Yong-Wei Zhang, "Polarity-Reversed Robust Carrier Mobility in Monolayer MoS2 Nanoribbons", J. Am. Chem. Soc. 136, 6269-6275 (2014). See also: arXiv:1310.7119v1.

· Won Seok Yun and J. D. Lee, "Unexpected strong magnetism of Cu doped single-layer MoS2 and its origin", Phys. Chem. Chem. Phys. 16, 8990-8996 (2014).

· Liangbo Liang and Vincent Meunier, "First-principles Raman spectra of MoS2, WS2 and their heterostructures", Nanoscale 6, 5394-5401 (2014).

· Liangzhi Kou, Aijun Du, Changfeng Chen, and Thomas Frauenheim, "Strain engineering of selective chemical adsorption on monolayer MoS2", Nanoscale 6, 5156-5161 (2014). See also: arXiv:1312.5926v1.

· Nourdine Zibouche, Mahdi Ghorbani-Asl, Thomas Heine and Agnieszka Kuc, "Electromechanical Properties of Small Transition-Metal Dichalcogenide Nanotubes", Inorganics 2, 155-167 (2014).

· M. O. Goerbig, G. Montambaux, F. Piechon, "Measure of Diracness in two-dimensional semiconductors", Europhys. Lett. 105, 57005 (2014). See also: arXiv:1312.3879v1.

· Duc Tam Ho, Soon-Dong Park, Haengsoo Lee, Soon-Yong Kwon, and Sung Youb Kim, "Strong correlation between surface stress and mechanical strain in Cu, Ag and Au", Europhys. Lett. 106, 36001 (2014).

· Jan Mertens, Yumeng Shi, Alejandro Molina-Sanchez, Ludger Wirtz, Hui Ying Yang, and Jeremy J. Baumberg, "Excitons in a mirror: Formation of "optical bilayers" using MoS2 monolayers on gold substrates", Appl. Phys. Lett. 104, 191105 (2014).

· Wen Huang, Xin Luo, Chee Kwan Gan, Su Ying Quek, and Gengchiau Liang, "Theoretical study of thermoelectric properties of few-layer MoS2 and WSe2", Phys. Chem. Chem. Phys. 16, 10866-10874 (2014).

· Xiang-Wei Jiang and Shu-Shen Li, "Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides", Appl. Phys. Lett. 104, 193510 (2014).

· V. Sorkin, H. Pan, H. Shi, S. Y. Quek and Y. W. Zhanga, "Nanoscale Transition Metal Dichalcogenides: Structures, Properties, and Applications", Crit. Rev. Solid State Mater. Sci. 39, 319-367 (2014).

· Quan Ma, Miguel Isarraraz, Chen S. Wang, Edwin Preciado, Velveth Klee, Sarah Bobek, Koichi Yamaguchi, Emily Li, Patrick Michael Odenthal, Ariana Nguyen, David Barroso, Dezheng Sun, Gretel von Son Palacio, Michael Gomez, Andrew Nguyen, Duy Le, Greg Pawin, John Mann, Tony. F. Heinz, Talat Shahnaz Rahman, and Ludwig Bartels, "Postgrowth Tuning of the Bandgap of Single-Layer Molybdenum Disulfide Films by Sulfur/Selenium Exchange", ACS Nano 8, 4672-4677 (2014).

· Changqing Wang, Haisheng Li, Yongsheng Zhang, Qiang Sun, and Yu Jia, "Effect of Strain on Atomic-scale Friction in Layered MoS2", Tribol. Int. 77, 211-217 (2014).

· Hua Wang, Hongbin Feng, and Jinghong Li, "Graphene and Graphene-like Layered Transition Metal Dichalcogenides in Energy Conversion and Storage", Small 10, 2165-2181 (2014).

· Hartwin Peelaers and Chris G. Van de Walle, "Elastic Constants and Pressure-Induced Effects in MoS2", J. Phys. Chem. C 118, 12073-12076 (2014).

· Daniel Rossi, Jae Hyo Han, Dongwon Yoo, Yitong Dong, Yerok Park, Jinwoo Cheon, and Dong Hee Son, "Photoinduced Separation of Strongly Interacting 2-D Layered TiS2 Nanodiscs in Solution", J. Phys. Chem. C 118, 12568-12573 (2014).

· Bahniman Ghosh, Abhishek Gupta, and Bhupesh Bishnoi, "Effect of tensile strain on the negative differential resistance in the WTe2 armchair nanoribbon", Mater. Res. Express 1, 025037 (2014).

· J. Ribeiro-Soares and M. S. Dresselhaus, "News and Views: Perspectives on Graphene and Other 2D Materials Research and Technology Investments", Braz. J. Phys. 44, 278-282 (2014).

· David M. Guzman and Alejandro Strachan, "Role of strain on electronic and mechanical response of semiconducting transition-metal dichalcogenide monolayers: An ab-initio study", J. Appl. Phys. 115, 243701 (2014). See also: arXiv:1312.1275v1.

· Hongyan Guo, Ning Lu, Jun Dai, Xiaojun Wu, and Xiao Cheng Zeng, "Phosphorene Nanoribbons, Phosphorus Nanotubes and van der Waals Multilayers", J. Phys. Chem. C 118, 14051-14059 (2014). See also: arXiv:1403.6209v1.

· Liang Dong, Raju R. Namburu, Terrance P. O'Regan, Madan Dubey, and Avinash M. Dongare, "Theoretical study on strain-induced variations in electronic properties of monolayer MoS2", J. Mater. Sci. 49, 6762-6771 (2014).

· Deniz Cakir, Hasan Sahin, and Francois M. Peeters, "Doping of Rhenium Disulfide monolayers: A systematic first principles study", Phys. Chem. Chem. Phys. 16, 16771-16779 (2014).

· Xiuming Dou, Kun Ding, Desheng Jiang, and Baoquan Sun, "Tuning and Identification of Interband Transitions in Monolayer and Bilayer Molybdenum Disulfide Using Hydrostatic Pressure", ACS Nano 8, 7458-7464 (2014).

· Zhen-Hua Chi, Xiao-Miao Zhao, Haidong Zhang, Alexander F. Goncharov, Sergey S. Lobanov, Tomoko Kagayama, Masafumi Sakata, and Xiao-Jia Chen, "Pressure-Induced Metallization of Molybdenum Disulfide", Phys. Rev. Lett. 113, 036802 (2014).

· C. N. R. Rao, Urmimala Maitra, and Umesh V. Waghmare, "Extraordinary attributes of 2-dimensional MoS2 nanosheets", Chem. Phys. Lett. 609, 172-183 (2014).

· Abbas Ebnonnasir, Badri Narayanan, Suneel Kodambaka, and Cristian V. Ciobanu, "Tunable MoS2 bandgap in MoS2-graphene heterostructures", Appl. Phys. Lett. 105, 031603 (2014).

· Arunima K. Singh and Richard G. Hennig, "Computational prediction of two-dimensional group-IV mono-chalcogenides", Appl. Phys. Lett. 105, 042103 (2014).

· Zhiguo Wang, Qiulei Su, G.Q. Yin, Jianjian Shi, Huiqiu Deng, J. Guan, M.P. Wu, Y.L. Zhou, H.L. Lou, and Y.Q. Fu, "Structure and electronic properties of transition metal dichalcogenide MX2 (M = Mo, W, Nb; X = S, Se) monolayers with grain boundaries", Mater. Chem. Phys. 147, 1068-1073 (2014).

· M. A. Cazalilla, H. Ochoa, and F. Guinea, "Quantum Spin Hall Effect in Strained Two-dimensional Crystals of Transition Metal Dichalcogenides", Phys. Rev. Lett. 113, 077201 (2014). See also: arXiv:1311.6650v1.

· Kian Ping Loh, Lee Kheng Tan, Bo Liu, Jinghua Teng, Shifeng Guo, and Hong Yee Low, "Atomic Layer Deposition of MoS2 film", Nanoscale 6, 10584-10588 (2014).

· Linyang Li and Mingwen Zhao, "Structures, Energetics, and Electronic Properties of Multifarious Stacking Patterns for High-Buckled and Low-Buckled Silicene on the MoS2 Substrate", J. Phys. Chem. C 118, 19129-19138 (2014).

· Youngbin Lee, Sung Beom Cho, and Yong-Chae Chung, "Tunable indirect to direct band gap transition of monolayer Sc2CO2 by the strain effect", ACS Appl. Mater. Interfaces 6, 14724-14728 (2014).

· Hongping Li, Lin Chen, Kun Zhang, Jiaqing Liang, Hua Tang, Changsheng Li, Xiaojuan Liu, Jian Meng, and Zhongchang Wang, "Atomic Structures and electronic properties of 2H-NbSe2: The impact of Ti doping", J. Appl. Phys. 116, 103709 (2014).

· Pramoda Kumar Nayak, Chao-Hui Yeh, Yu-Chen Chen, and Po-Wen Chiu, "Layer-Dependent Optical Conductivity in Atomic Thin WS2 by Reflection Contract Spectroscopy", ACS Appl. Mater. Interfaces 6, 16020-16026 (2014).

· Nourdine Zibouche, Pier Philipsen, Agnieszka Kuc, and Thomas Heine, "Transition-metal dichalcogenide bilayers: switching materials for spin- and valleytronic applications", Phys. Rev. B 90, 125440 (2014). See also: arXiv:1406.5012v1.

· Xiaokun Gu and Ronggui Yang, "Phonon transport in single-layer transition metal dichalcogenides: A first-principles study", Appl. Phys. Lett. 105, 131903 (2014). See also: arXiv:1407.3758v1.

· Tao Peng, Gui, Huai-Hong, Yang Teng, and Zhang Zhi-Dong, "Stacking stability of MoS2 bilayer: An ab initio study", Chin. Phys. B 23, 106801 (2014).

· Benoit Mahler, Veronika Hoepfner, Kristine Liao, and Geoffrey A. Ozin, "Colloidal Synthesis of 1T-WS2 and 2H-WS2 Nanosheets: Applications for Photocatalytic Hydrogen Evolution", J. Am. Chem. Soc. 136, 14121-14127 (2014).

· D. Mastrogiuseppe, N. Sandler, and S. Ulloa, "RKKY interaction and intervalley processes in p-doped transition-metal dichalcogenides", Phys. Rev. B 90, 161403(R) (2014). See also: arXiv:1409.7649v1.

· Rafael Roldán, Jose A. Silva-Guillén, M. Pilar López-Sancho, Francisco Guinea, Emmanuele Cappelluti, and Pablo Ordejón, "Electronic properties of single-layer and multilayer transition metal dichalcogenides MX2 (M = Mo, W and X = S, Se)", Ann. Phys. (Berlin) 526, 347-357 (2014). See also: arXiv:1410.2154v1.

· Nourdine Zibouche, Agnieszka Kuc, Janice Musfeldt, and Thomas Heine, "Transition-metal dichalcogenides for spintronic applications", Ann. Phys. (Berlin) 526, 395-401 (2014).

· Takashi Komesu, Duy Le, Quan Ma, Eike F. Schwier, Yohei Kojima, Mingtian Zheng, Hideaki Iwasawa, Kenya Shimada, Masaki Taniguchi, Ludwig Bartels, Talat S. Rahman, and P. A. Dowben, "Symmetry-resolved surface-derived electronic structure of MoS2(0001)", J. Phys.: Condens. Matter 26, 455501 (2014).

· Swastibrata Bhattacharyya, Tribhuwan Pandey, and Abhishek K. Singh, "Effect of strain on electronic and thermoelectric properties of few layers to bulk MoS2", Nanotechnology 25, 465701 (2014). See also: arXiv:1407.7522v1.

· Hongsheng Liu, Nannan Han, and Jijun Zhao, "Band gap opening in bilayer silicene by alkali metal intercalation", J. Phys.: Condens. Matter 26, 475303 (2014).

· N. Izyumskaya, D. O. Demchenko, V. Avrutin, U. Ozgur, and H. Morkoc, "Two-dimensional MoS2 as a new material for electronic devices", Turk. J. Phys. 38, 478-396 (2014).

· Claudia Ruppert, Ozgur Burak Aslan, and Tony F. Heinz, "Optical Properties and Band Gap of Single- and Few-Layer MoTe2 Crystals", Nano Lett. 14, 6231-6236 (2014).

· Atanu Samanta, Tribhuwan Pandey, Abhishek K. Singh, "Strain-induced electronic phase transition and strong enhancement of thermopower of TiS2", Phys. Rev. B 90, 174301 (2014). See also: arXiv:1410.1020v1.

· Youngbin Lee, Yubin Hwang, Sung Beom Cho, and Yong Chae Chung, "Achieving a direct band gap in oxygen functionalized-monolayer scandium carbide by applying an electric field", Phys. Chem. Chem. Phys. 16, 26273-26278 (2014).

· Agnieszka Kuc, "Low-dimensional transition-metal dichalcogenides (Book Chapter)", Chemical Modelling (Editors: Michael Springborg, Jan-Ole Joswig) 11, pp. 1-29 (2014) (The Royal Society of Chemistry).

· J. E. Padilha, H. Peelaers, A. Janotti, and C. G. Van de Walle, "Nature and evolution of the band-edge states in MoS2: From monolayer to bulk", Phys. Rev. B 90, 205420 (2014).

· Chen Li, Tailin Wang, Yongzhong Wu, Fukun Ma, Gang Zhao, and Xiaopeng Hao, "Fabrication of two-dimensional nanosheets via water freezing expansion exfoliation", Nanotechnology 25, 495302 (2014).

· Wei Li, A. Glen Birdwell, Matin Amani, Robert A. Burke, Xi Ling, Yi-Hsien Lee, Xuelei Liang, Lianmao Peng, Curt A. Richter, Jing Kong, David J. Gundlach, and N. V. Nguyen, "Broad Band Optical Properties of Large Area Monolayer CVD Molybdenum Disulfide", Phys. Rev. B 90, 195434 (2014). See also: arXiv:1407.6997v1.

· Namphung Peimyoo, Weihuang Yang, Jingzhi Shang, Xiaonan Shen, Yanlong Wang, and Ting Yu, "Chemically-Driven Tunable Light Emission of Charged and Neutral Excitons in Monolayer WS2", ACS Nano 8, 11320-11329 (2014).

· T. P. Kaloni, L. Kou, T. Frauenheim, U. Schwingenschlögl, "Quantum spin Hall states in graphene interacting with WS2 or WSe2", Appl. Phys. Lett. 105, 233112 (2014). See also: arXiv:1412.0749v1.

· Satyajit Ratha, Adam J. Simbeck, Dattatray J. Late, Saroj K. Nayak, and Chandra Sekhar Rout, "Negative infrared photocurrent response in layered WS2/reduced graphene oxide hybrids", Appl. Phys. Lett. 105, 243502 (2014).

· Hector Ochoa, Francesca Finocchiaro, Francisco Guinea, and Vladimir I. Fal'ko, "Spin-valley relaxation and quantum transport regimes in two-dimensional transition metal dichalcogenides", Phys. Rev. B 90, 235429 (2014). See also: arXiv:1408.2121v1.

2015 {95}

· Sheng Yu, Hao D. Xiong, Kwesi Eshun, Hui Yuan, and Qiliang Li, "Phase transition, effective mass and carrier mobility of MoS2 monolayer under tensile strain", Appl. Surf. Sci. 325, 27-32 (2015).

· Graeme Cunningham, Damien Hanlon, Niall McEvoy, Georg S Duesberg, and Jonathan N. Coleman, "Large variations in both dark- and photoconductivity in nanosheet networks as nanomaterial is varied from MoS2 to WTe2", Nanoscale 7, 198-208 (2015).

· Ziyu Hu, Shengli Zhang, Yanning Zhang, Da Wang, Haibo Zeng, and Li-Min Liu, "Modulating the phase transition between metallic and semiconducting single-layer MoS2 and WS2 through size effects", Phys. Chem. Chem. Phys. 17, 1099-1105 (2015).

· Le Huang, Zhanghui Chen, and Jingbo Li, "Effects of strain on band gap and effective mass in two-dimensional monolayer GaX (X=S, Se, Te)", RSC Adv. 5, 5788-5794 (2015).

· Andrés Castellanos-Gomez, Vibhor Singh, Herre S. J. van der Zant, Gary A. Steele, "Mechanics of freely-suspended ultrathin layered materials", Ann. Phys. (Berlin) 527, 27-44 (2015). See also: arXiv:1409.1173v1.

· Weijie Zhao, Ricardo Mendes Ribeiro, and Goki Eda, "Electronic Structures and Optical Signatures of Semiconducting Transition Metal Dichalcogenide Nanosheets", Acc. Chem. Res. 48, 91-99 (2015).

· Po-Chun Yeh, Wencan Jin, Nader Zaki, Datong Zhang, Jonathan T. Liou, Jerzy T. Sadowski, Abdullah Al-Mahboob, Jerry I. Dadap, Irving P. Herman, Peter Sutter, and Richard M. Osgood, Jr., "Layer-dependent electronic structure of an atomically heavy two-dimensional transition metal dichalcogenides", Phys. Rev. B 91, 041407(R) (2015).

· Oleg V. Yazyev and Andras Kis, "MoS2 and semiconductors in the flatland", Mater. Today 18, 20-30 (2015).

· Jin Yu and Wanlin Guo, "Strain tunable electronic and magnetic properties of pristine and semihydrogenated hexagonal boron phosphide", Appl. Phys. Lett. 106, 043107 (2015).

· Won Seok Yun and J. D. Lee, "Strain-Induced Magnetism in Single-Layer MoS2: Origin and Manipulation", J. Phys. Chem. C 119, 2822-2827 (2015).

· Ruiqi Zhang, Bin Li, and Jinlong Yang, "A First-principles Study on Electron Donor and Acceptor Molecules adsorbed on Phosphorene", J. Phys. Chem. C 119, 2871-2878 (2015).

· Kai-Ge Zhou, Min Zhao, Meng-Jie Chang, Qiang Wang, Xin-Zhi Wu, Yinglin Song, and Hao-Li Zhang, "Size-Dependent Nonlinear Optical Properties of Atomically Thin Transition Metal Dichalcogenide Nanosheets", Small 11, 694-701 (2015).

· Yinping Fan, Jun Li, Guolin Hao, Siwei Luo, Chao Tang, and Jianxin Zhong, "Synthesis, characterization of WS2 nanostructures by vapor phase deposition", J. Appl. Phys. 117, 064302 (2015).

· Hongsheng Liu, Nannan Han, and Jijun Zhao, "Atomistic insight into the oxidation of monolayer transition metal dichalcogenides: from structures to electronic properties", RSC Adv. 5, 17572-17581 (2015).

· Yong-Hong Zhao, Feng Yang, Jian Wang, Hong Guo, and Wei Ji, "Continuously tunable electronic structure of transition metal dichalcogenides superlattices", Sci. Rep. 5, 8356 (2015). See also: arXiv:1310.7285v1.

· Xiaofeng Fan, W. T. Zheng, Jer-Lai Kuo, and David J. Singh, "Structural stability of single-layer MoS2 under large strain", J. Phys.: Condens. Matter 27, 105401 (2015).

· Zilu Wang, Qian Chen, and Jinlan Wang, "Electronic Structure of Twisted Bilayers of Graphene/MoS2 and MoS2/MoS2", J. Phys. Chem. C 119, 4752-4758 (2015).

· Alfredo Ramirez-Torres, Duy Le, and Talat S. Rahman, "Effect of monolayer supports on the electronic structure of single-layer MoS2", IOP Conf. Ser.: Mater. Sci. Eng. 76 012011 (2015).

· Mingxiao Ye, Dustin Winslow, Dongyan Zhang, Ravindra Pandey, and Yoke Khin Yap, "Recent Advancement on the Optical Properties of Two-Dimensional Molybdenum Disulfide (MoS2) Thin Films", Photonics 2, 288-307 (2015).

· Kyuhwan Lee, Won Seok Yun, and J. D. Lee, "Giant Rashba-type splitting in molybdenum-driven bands of MoS2/Bi(111) heterostructure", Phys. Rev. B 91, 125420 (2015).

· Wencan Jin, Po-Chun Yeh, Nader Zaki, Datong Zhang, Jonathan T. Liou, Jerzy T. Sadowski, Alexey Barinov, Mikhail Yablonskikh, Jerry I. Dadap, Peter Sutter, Irving P. Herman, and Richard M. Osgood, Jr., "Substrate interactions with suspended and supported monolayer MoS2: Angle-resolved photoemission spectroscopy", Phys. Rev. B 91, 121409(R) (2015).

· Gerd Plechinger, Andrés Castellanos-Gomez, Michele Buscema, Herre S. J. van der Zant, Gary A. Steele, Agnieszka Kuc, Thomas Heine, Christian Schuller, and Tobias Korn, "Control of biaxial strain in single-layer molybdenite using local thermal expansion of the substrate", 2D Mater. 2, 015006 (2015).

· Monireh Faraji, Mehdi Sabzali, Samira Yousefzadeh, Navid Sarikhani, Azin Ziashahabi, Mohammad Zirak, and A. Z. Moshfegh, "Band Engineering and Charge Separation in the Mo1-xWxS2/TiO2 Heterostructure by Alloying: First Principle Prediction", RSC Adv. 5, 28460-28466 (2015).

· Can Wang, Qinglin Xia, Yaozhuang Nie, and Guanghua Guo, "Strain-induced gap transition and anisotropic Dirac-like cones in monolayer and bilayer phosphorene", J. Appl. Phys. 117, 124302 (2015).

· Kulbir Kaur Ghuman, Shwetank Yadav, and Chandra Veer Singh, "Adsorption and Dissociation of H2O on Monolayered Mo2 Edges: Energetics and Mechanism from ab Initio Simulations", J. Phys. Chem. C 119, 6518-1529 (2015).

· Dominik Lembke, Adrien Allain, and Andras Kis, "Thickness-dependent mobility in two-dimensional Mo2 transistors", Nanoscale 7, 6255-6260 (2015).

· Bahniman Ghosh and Naval Kishor, "An ab initio study of strained two-dimensional MoSe2", J. Semicond. 36, 043001 (2015).

· Carmen C. Mayorga-Martinez, Adriano Ambrosi, Alex Yong Sheng Eng, Zdenek Sofer, and Martin Pumera, "Transition metal dichalcogenides (MoS2, MoSe2, WS2 and WSe2) exfoliation technique have strong influences upon their capacitance", Electrochem. Commun. 56, 24-28 (2015).

· Bahniman Ghosh and Naval Kishor, "First principle defect study of MoSe2 field effect transistor", Appl. Phys. B 119, 297-303 (2015).

· Evangelia Xenogiannopoulou, Polychronis Tsipas, Kleopatra E. Aretouli, Dimitra Tsoutsou, Sigiava A. Giamini, Calliope Bazioti, George Dimitrakopulos, Philomela Komninou, Steven Brems, Cedric Hughebaert, Iuliana P. Radu, and Athanasios Dimoulas, "High quality large area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy", Nanoscale 7, 7896-7905 (2015).

· Duy Le, Alexei Barinov, Edwin Preciado, Miguel Isarraraz, Iori Tanabe, Takashi Komesu, Conrad Troha, Ludwig Bartels, Talat S. Rahman, and Peter A. Dowben, "Spin-orbit coupling in the band structure of monolayer WSe2", J. Phys.: Condens. Matter 27, 182201 (2015).

· Yu Kobayashi, Shogo Sasaki, Shohei Mori, Hiroki Hibino, Zheng Liu, Kenji Watanabe, Takashi Taniguchi, Kazu Suenaga, Yutaka Maniwa, and Yasumitsu Miyata, "Growth and Optical Properties of High-Quality Monolayer WS2 on Graphite", ACS Nano 9, 4056-4063 (2015).

· Gui-Bin Liu, Di Xiao, Yugui Yao, Xiaodong Xu, and Wang Yao, "Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides", Chem. Soc. Rev. 44, 2643-2663 (2015).

· Jun Kang, Hasan Sahin, and Francois M. Peeters, "Tuning Carrier Confinement in MoS2/WS2 Later Heterostructure", J. Phys. Chem. C 119, 9580-9586 (2015).

· Thomas Brumme, Matteo Calandra, and Francesco Mauri, "First-principle theory of field-effect doping in transition-metal dichalcogenides: structural properties, electronic structure, Hall coefficient, and electrical conductivity", Phys. Rev. B 91, 155436 (2015). See also: arXiv:1501.07223v1.

· Fan Zeng, Wei-Bing Zhang, and Bi-Yu Tang, "Electronic structure and elastic properties of monolayer and bialyer transition metal dichalcogenides MX2 (M=Mo,W;X=O,S,Se,Te): A comparative first-principles study", Chin. Phys. B 24, 097103 (2015). See also: arXiv:1505.01640v1.

· Ariana Elaine Nguyen, Pankaj Sharma, Thomas Scott, Edwin Preciado, Velveth Klee, Dezheng Sun, I-Hsi (Daniel) Lu, David Barroso, SukHyun Kim, Vladimir Ya. Shur, Andrey R. Akhmatkhanov, Alexei Gruverman, Ludwig Bartels, and Peter A. Dowben, "Towards Ferroelectric Control of Monolayer MoS2", Nano Lett. 15, 3364-3369 (2015).

· Xiaofeng Fan, Chung-Huai Chang, Weitao Zheng, Jer-Lai Kuo, and David J. Singh, "The Electronic Properties of Single-layer and Multi-layer MoS2 under High Pressure", J. Phys. Chem. C 119, 10189-10196 (2015).

· Blanca Biel, Luca Donetti, Ernesto R. Ortiz, Andres Godoy, and Francisco Gamiz, "Tunability of effective masses on MoS2 monolayers", Microelectron. Eng. 147, 302-305 (2015).

· E. R. Ortiz, Blanca Biel, Luca Donetti, Andrés Godoy, and Francisco Gámiz, "Strain effects on effective masses for MoS2 monolayers", J. Phys.: Conf. Ser. 609, 012008 (2015).

· Tetsuro Habe and Mikito Koshino, "Spin-dependent refraction at the atomic step of transition-metal dichalcogenides", Phys. Rev. B 91, 201407(R) (2015). See also: arXiv:1411.3088v1.

· Huilong Xu, Sara Fathipour, Erich W. Kinder, Alan C. Seabaugh, and Susan K. Fullerton-Shirey, "Reconfigurable Ion Gating of 2H-MoTe2 Field-Effect Transistors Using Polyethylen Oxide-CsClO4 Solid Polymer Electrolyte", ACS Nano 9, 4900-4910 (2015).

· Michele Buscema, Joshua O. Island, Dirk J. Groenendijk, Sofya I. Blanter, Gary A. Steele, Herre S. J. van der Zant, and Andrés Castellanos-Gomez, "Photocurrent generation with two-dimensional van der Waals semiconductors", Chem. Soc. Rev. 44, 3691-3718 (2015).

· Ai-Ming Hu, Ling-ling Wang, Wen-Zhi Xiao, and Bo Meng, "Electronic structures and magnetic properties in Cu-doped two-dimensional dichalcogenides", Physica E 73, 69-75 (2015).

· Ziyu Hu and Shengli Zhang, "The electronic properties tuned by the phase transition between the semiconducting and metallic phase of monolayer MoS2/WS2", Phase Transit. 88, 726-734 (2015).

· Xi-Bo Li, Pan Guo, Teng-Fei Cao, Hao Liu, Woon-Ming Lau, and Li-Min Liu, "Structures, stabilities, and electronic properties of defects in monolayer black phosphorus", Sci. Rep. 5, 10848 (2015).

· Ashish Arora, Maciej Koperski, Karol Nogajewski, Jacques Marcus, C. Faugeras, and Marek Potemski, "Excitonic resonances in thin films of WSe2: From monolayer to bulk material", Nanoscale 7, 10421-10429 (2015). See also: arXiv:1503.01682v1.

· Carsten Habenicht, Martin Knupfer, and Bernd Büchner, "Investigation of the dispersion and the effective masses of excitons in bulk 2H-MoS2 using transition electron energy-loss spectroscopy", Phys. Rev. B 91, 245203 (2015). See also: arXiv:1505.06401v1.

· Xi-Bo Li, Pan Guo, Yan-Ning Zhang, Ru-Fang Peng, Hui Zhang, and Li-Min Liu, "High carrier mobility of few-layer PbX (X = S, Se, Te)", J. Mater. Chem. C 3, 6284-6290 (2015).

· Wei Sun Leong, Yida Li, Xin Luo, Chang Tai Nai, Su Ying Quek, and John TL Thong, "Tuning the threshold voltage of MoS2 field-effect transistors via surface treatment", Nanoscale 7, 10823-10831 (2015).

· Chia-Hui Lee, Eduardo Cruz-Silva, Lazaro Calderin, Minh An T. Nguyen, Matthew J. Hollander, Brian Bersch, Thomas E. Mallouk, and Joshua A. Robinson, "Tungsten Ditelluride: a layered semimetal", Sci. Rep. 5, 10013 (2015).

· Changqing Wang, Weiguang Chen, Yongsheng Zhang, Qiang Sun, and Yu Jia, "Effects of vdW Interaction and Electric Field on Friction in MoS2", Tribol. Lett. 59, 7 (2015).

· Le Huang, Nengjie Huo, Yan Li, Hui Chen, Juehan Yang, Zhongming Wei, Jingbo Li, and Shu-Shen Li, "Electric Field Tunable Band Offsets in Black Phosphorus and MoS2 van der Waals p-n Heterostructure", J. Phys. Chem. Lett. 6, 2483-2488 (2015).

· Jongmin Kim, Won Seok Yun, and J. D. Lee, "Optical Absorption of Armchair MoS2 Nanoribbons: Enhanced Correlation Effects in the Reduced Dimension;", J. Phys. Chem. C 119, 13901-13906 (2015).

· Zhao Zhao, Haijun Zhang, Hongtao Yuan, Shibing Wang, Yu Lin, Qiaoshi Zeng, Gang Xu, Zhenxian Liu, G. K. Solanki, K. D. Patel, Yi Cui, Harold Y. Hwang, and Wendy L. Mao, "Pressure induced metallization with absence of structural transition in layered MoSe2", Nat. Commun. 6, 7312 (2015). See also: arXiv:1504.08077v1.

· Sang Sub Kim, Tran Van Khai, Vadym Kulish, Yoon-Hyun Kim, Han Gil Na, Akash Katoch, Minoru Osada, Ping Wu, and Hyoun Woo Kim, "Tunable Bandgap Narrowing Induced by Controlled Molecular Thickness in 2D Mica Nanosheets", Chem. Mater. 27, 4222-4228 (2015).

· Liang Dong, Jin Wang, Raju Namburu, Terrance P. O'Regan, Madan Dubey, and Avinash M. Dongare, "Edge effects on band gap energy in bilayer 2H-MoS2 under uniaxial strain", J. Appl. Phys. 117, 244303 (2015).

· Junjie Qi, Yann-Wen Lan, Adam Z. Stieg, Jyun-Hong Chen, Yuan-Liang Zhong, Lain-Jong Li, Chii-Dong Chen, Yue Zhang, and Kang L. Wang, "Piezoelectric effect in chemical vapour deposition-grown atomic-monolayer triangular molybdenum disulfide piezotronics", Nat. Commun. 6, 7430 (2015).

· Dehui Li, Rui Cheng, Hailong Zhou, Chen Wang, Anxiang Yin, Yu Chen, Nathan O. Weiss, Yu Huang, and Xiangfeng Duan, "Electric-field-induced strong enhancement of electroluminescence in multilayer molybdenum disulfide", Nat. Commun. 6, 7509 (2015). See also: arXiv:1501.02422v1.

· Yingdi Jin, Xingxing Li, and Jinlong Yang, "Single layer of MX3 (M=Ti, Zr; X=S, Se, Te): a new platform for nano-electronics and optics", Phys. Chem. Chem. Phys. 17, 18665-18669 (2015). See also: arXiv:1502.05108v1.

· Kai-Ge Zhou and Hao-Li Zhang, "Lighten the Olympia of the Flatland: Probing and Manipulating the Photonic Properties of 2D Transition-Metal Dichalcogenides", Small 11, 3206-3220 (2015).

· Jing Xia, Dandan Zhu, Lei Wang, Ben Huang, Xing Huang, and Xiang-Min Meng, "Large-Scale Growth of Two-Dimensional SnS2 Crystals Driven by Screw Dislocations and Application to Photodetectors", Adv. Funct. Mater. 25, 4255-4261 (2015).

· Xianghua Zhang, Maoquan Xue, Xinghua Yang, Guangsi Luo, Feng Yang, "Hydrothermal synthesis and tribological properties of MoSe2 nanoflowers", Micro & Nano Lett. 10, 339-342 (2015).

· Viet Q. Bui, Tan-Tien Pham, Duy A. Le, Cao Min Thi, and Hung M. Le, "A first-principles investigation of various gas (CO, H2O, NO, and O2) absorptions on a WS2 monolayer: stability and electronic properties", J. Phys.: Condens. Matter 27, 305005 (2015).

· Rafael Roldán, Andrés Castellanos-Gomez, Emmanuele Cappelluti, and Francisco Guinea, "Strain engineering in semiconducting two-dimensional crystals", J. Phys.: Condens. Matter 27, 313201 (2015). See also: arXiv:1504.07926v1.

· Saifeng Zhang, Ningning Dong, Niall McEvoy, Maria O'Brien, Sinead Winters, Nina C. Berner, Chanyoung Yim, Yuanxin Li, Xiaoyan Zhang, Zhanghai Chen, Long Zhang, Georg S. Duesberg, and Jun Wang, "Direct Observation of Degenerate Two-Photon Absorption and Its Saturation of WS2 and MoS2 Monolayer and Few-Layer Films", ACS Nano 9, 7142-7150 (2015). See also: arXiv:1503.02258v1.

· Mohammad H. Tahersima and Volker J. Sorger, "Enhanced photon absorption in spiral nanostructured solar cells using layered 2D materials", Nanotechnology 26, 344005 (2015).

· Arunima K. Singh, Richard G. Hennig, Albert V. Davydov, and Francesca Tavazza, "Al2O3 as a suitable substrate and a dielectric layer for n-layer MoS2", Appl. Phys. Lett. 107, 053106 (2015).

· Vladimir Ya. Aleshkin, Alexander A. Dubinov, Maxim Ryzhii, Victor Ryzhii, and Taiichi Otsuji, "Electron Capture in van der Waals Graphene-Based Heterostructures with WS2 Barrier Layers", J. Phys. Soc. Jpn. 84, 094703 (2015).

· Sajedeh Manzeli, Adrien Allain, Amirhossein Ghadimi, and Andras Kis, "Piezoresistivity and Strain-induced Band Gap Tuning in Atomically Thin MoS2", Nano Lett. 15, 5330-5335 (2015).

· Xiaofeng Qian, Yangyang Wang, Wenbin Li, Jing Lu, and Ju Li, "Modelling of stacked 2D materials and devices", 2D Mater. 2, 032003 (2015).

· Xiaoou Zhang and Qingfang Li, "Electronic and magnetic properties of nonmetal atoms adsorbed ReS2 monolayers", J. Appl. Phys. 118, 064306 (2015).

· Manouchehr Hosseini, Mohammad Elahi, Mahdi Pourfath, and David Esseni, "Strain induced mobility modulation in single-layer MoS2", J. Phys. D: Appl. Phys. 48, 375104 (2015).

· Liqin Su, Yifei Yu, Linyou Cao, and Yong Zhang, "Effects of substrate type and material-substrate bonding on high-temperature behavior of monolayer WS2", Nano Res. 8, 2686-2697 (2015).

· Soumendu Datta, Gopi Chandra Kaphle, Sayan Baral, and Abhijit Mookerjee, "Study of morphology effects on magnetic interactions and band gap variations for 3d late transition metal bi-doped ZnO nanostructures by hybrid DFT calculations", J. Chem. Phys. 143, 084309 (2015). See also: arXiv:1512.07973v1.

· J. D. Yao, J. M. Shao, Z. Q. Zheng, and G. W. Yang, "Stable, high-responsive and broadband photodetection based on large-area multilayer WS2 films grown by pulsed-laser deposition", Nanoscale 7, 14974-14981 (2015).

· Mohammad H. Tahersima and Volker J. Sorge, "2D materials for photon conversion and nanophotonics", Proc. SPIE 9608, Infrared Remote Sensing and Instrumentation XXIII, 96081E (2015).

· Zhi Gen Yu, Yongqing Cai, and Yong-Wei Zhang, "Robust Direct Bandgap Characteristics of One- and Two-Dimensional ReS2", Sci. Rep. 5, 13783 (2015).

· Nitin T. Shelke and B. R. Karche, "Hydrothermal synthesis of WS2/RGO sheet and their application in UV Photodetector", J. Alloys Compd. 653, 298-303 (2015).

· Jiaren Yuan, Xiaohong Yan, Changjie Dai, Yang Xiao, and Yandong Guo, "ELECTRONIC AND MAGNETIC PROPERTIES OF MONOLAYER WS2 DOPED WITH MnXm (m = 0, 3, 6; X = N, O, F)", Surf. Rev. Lett. 22, 1550071 (2015).

· Ming Li, Jun Dai, and Xiao Cheng Zeng, "Tuning the electronic properties of transition-metal trichalcogenides via tensile strain", Nanoscale 7, 15385-15391 (2015).

· Adam H. Woomer, Tyler W. Farnsworth, Jun Hu, Rebekah A. Wells, Carrie L. Donley, and Scott C. Warren, "Phosphorene: Synthesis, Scale-Up, and Quantitative Optical Spectroscopy", ACS Nano 9, 8869-8884 (2015). See also: arXiv:1505.04663v2.

· Zhangxian Chen, Liang Huang, Yongjie Xi, Ran Li, Wanchao Li, Guoqin Xu, and Hansong Cheng, "Geometrical structures, and electronic and transport properties of a novel two-dimensional β-GaS transparent conductor", Nano Res. 8, 3177-3185 (2015).

· K. C. Santosh, Chenxi Zhang, Suklyun Hong, Robert M. Wallace, and Kyeongjae Cho, "Phase stability of transition metal dichalcogenide by competing ligand field stabilization and charge density wave", 2D Mater. 2, 035019 (2015).

· Zhi Gen Yu, Yong-Wei Zhang, and Boris I. Yakobson, "An Anomalous Formation Pathway for Dislocation-Sulfur Vacancy Complexes in Polycrystalline Monolayer MoS2", Nano Lett. 15, 6855-6861 (2015).

· Jun Kang, Hasan Sahin, and Francois M. Peeters, "Mechanical Properties of Monolayer Sulphides: A Comparative Study between MoS2, HfS2, and TiS3", Phys. Chem. Chem. Phys. 17, 27742-27749 (2015).

· Cailei Yuan, Yingjie Cao, Xingfang Luo, Ting Yu, Zhenping Huang, B. Xu, Yong Yang, Qinliang Li, Gang Gu, and Wen Lei, "Monolayer-by-monolayer stacked pyramid-like MoS2 nanodots on monolayer MoS2 flakes with enhanced photoluminescence", Nanoscale 7, 17468-17472 (2015).

· Chulseung Jung, Seung Min Kim, Hyunseong Moon, Gyuchull Han, Junyeon Kwon, Young Ki Hong, Inturu Omkaram, Youngki Yoon, Sunkook Kim, and Jozeph Park, "Highly Crystalline CVD-grown Multilayer MoSe2 Thin Film Transistor for Fast Photodetector", Sci. Rep. 5, 15313 (2015).

· Song-Lin Li and Kazuhito Tsukagoshi, "Carrier Injection and Scattering in Atomically Thin Chalcogenides", J. Phys. Soc. Jpn. 84, 121011 (2015).

· Gen Yu and Yong-Wei Zhang, "A comparative density functional study on electrical properties of layered penta-graphene", J. Appl. Phys. 118, 165706 (2015).

· Weihua Wu, Shaobin Tang, Junjing Gu, and Xinrui Cao, "Realizing semiconductor to metal transition in graphitic ZnO and MoS2 nanocomposite with external electric field", RSC Adv. 5, 99153-99163 (2015).

· Songjie Li, Chengduo Wang, and Hai Qiu, "Single- and few-layer ZrS2 as efficient photocatalysts for hydrogen production under visible light", Int. J. Hydrogen Energy 40, 15503-15509 (2015).

· Wencan Jin, Po-Chun Yeh, Nader Zaki, Daniel Chenet, Ghidewon Arefe, Yufeng Hao, Alessandro Sala, Tevfik Onur Mentes, Jerry I. Dadap, Andrea Locatelli, James Hone, and Richard M. Osgood, Jr., "Tuning the electronic structure of monolayer graphene/MoS2 van der Waals heterostructures via interlayer twist", Phys. Rev. B 92, 201409(R) (2015). See also: arXiv:1510.00690v1.

· M. Zhang, Guohua Hu, Guoqing Hu, R. C. T. Howe, L. Chen, Z. Zheng, and T. Hasan, "Yb- and Er-doped fiber laser Q-switched with an optically uniform, broadband WS2 saturable absorber", Sci. Rep. 5, 17482 (2015). See also: arXiv:1507.03188v1.

· S. H. Rhim, Young Soo Kim, and A. J. Freeman, "Strain-induced giant second-harmonic generation in monolayered 2H-MoX2 (X = S, Se, Te)", Appl. Phys. Lett. 107, 241908 (2015). See also: arXiv:1504.04936v1.

2016 {85}

· Song-Lin Li, Kazuhito Tsukagoshi, Emanuele Orgiu, and Paolo Samori, "Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors", Chem. Soc. Rev. 45, 118-151 (2016).

· Zhengqian Luo, Duanduan Wu, Bin Xu, Huiying Xu, Zhiping Cai, Jian Peng, Jian Weng, Shuo Xu, Chunhui Zhu, Fengqiu Wang, Zhipei Sun, and Han Zhang, "Two-dimensional materials saturable absorbers: Towards compact visible-wavelength all-fiber pulsed lasers", Nanoscale 8, 1066-1072 (2016).

· Yangyang Wang, Ruoxi Yang, Ruge Quhe, Hongxia Zhong, Linxiao Cong, Meng Ye, Zeyuan Ni, Zhigang Song, Jinbo Yang, Junjie Shi, Ju Li, and Jing Lu, "Does p-type Ohmic contact exist in WSe2-metal interfaces?", Nanoscale 8, 1179-1191 (2016). See also: arXiv:1508.00300v1.

· Jia Zhou, "Novel hetero-bilayered materials for photovoltaics", Appl. Mater. Today 2, 24-31 (2016).

· Meng Zhang, Zhongjia Huang, Xiao Wang, Hongyu Zhang, Taohai Li, Zhaolong Wu, Youhua Luo, and Wei Cao, "Magnetic MoS2 pizzas and sandwiches with Mnn (n = 1-4) cluster toppings and fillings: A first-principles investigation", Sci. Rep. 6, 19504 (2016).

· Jisook Hong, Changhoon Lee, Jin-Seong Park, and Ji Hoon Shim, "Control of valley degeneracy in MoS2 by layer thickness and electric field and its effect on thermoelectric properties", Phys. Rev. B 93, 035445 (2016). See also: arXiv:1507.01050v1.

· H. H. Huang, Xiaofeng Fan, David J. Singh, Hong Chen, Qing Jiang, and Wei Tao Zheng, "Controlling phase transition from single-layer MTe2 (M = Mo, W): Modulation of potential barrier under strain", Phys. Chem. Chem. Phys. 18, 4086-4094 (2016).

· Joshua O. Island, Agnieszka Kuc, Erik H. Diependaal, Rudolf Bratschitsch, Herre S.J. van der Zant, Thomas Heine, and Andrés Castellanos-Gomez, "Precise and reversible band gap tuning in single-layer MoSe2 by uniaxial strain", Nanoscale 8, 2589-2593 (2016). See also: arXiv:1511.09241.

· Mohammad Hossein Tahersima and Volker J. Sorger, "Strong Photon Absorption in 2-D Material-Based Spiral Photovoltaic Cells", MRS Adv. 1, 3915-2921 (2016).

· Mojtaba Farmanbar and Geert Brocks, "First-principles study of van der Waals interactions and lattice mismatch at MoS2/metal interfaces", Phys. Rev. B 93, 085304 (2016). See also: arXiv:1510.04337v1.

· Daniel Gerchman and Annelise Kopp Alves, "Solution-processable exfoliation and suspension of atomically thin WSe2", J. Colloid Interface Sci. 468, 247-252 (2016).

· Thomas Brumme, Matteo Calandra, and Francesco Mauri, "Determination of scattering time and of valley occupation in transition-metal dichalcogenides doped by field effect", Phys. Rev. B 93, 081407(R) (2016). See also: arXiv:1602.00893v1.

· T. Wozniak, P. Scharoch, and M. J. Winiarski, "Structural Parameters and Electronic Structure of Monolayers of Transition Metal Dichalcogenides from Ab Initio Calculations", Acta Phys. Pol. A 129, A-56 (2016).

· Xiangying Su, Weiwei Ju, Ruizhi Zhang, Chongfeng Guo, Jiming Zheng, Yongliang Yong, and Xiaohong Li, "Bandgap engineering of MoS2/MX2 (MX2 = WS2, MoSe2, WSe2) heterobilayers subjected to biaxial strain and compressive strain", RSC Adv. 6, 18319-18325 (2016).

· G. K. Solanki, Pratik Pataniya, C. K. Sumesh, K. D. Patel, and V. M. Pathak, "Excitonic emission and absorption resonances in V0.25W0.75Se2 single crystals grown by direct vapour transport technique", J. Cryst. Growth 441, 101-106 (2016).

· Qipeng Lu, Yifu Yu, Qinglang Ma, Bo Chen, and Hua Zhang, "2D Transition-Metal-Dichalcogenide-Nanosheet-Based Composites for Photocatalytic and Electrocatalytic Hydrogen Evolution Reactions", Adv. Mater. 28, 1917-1933 (2016).

· Julian Klein, Jakob Wierzbowski, Armin Regler, Jonathan Becker, Florian Heimbach, Kai Müller, Michael Kaniber, and Jonathan Finley, "Stark Effect Spectroscopy of Mono- and Few-Layer MoS2", Nano Lett. 16, 1554-1559 (2016). See also: arXiv:1602.02010v1.

· G. Q. Huang, Z. W. Xing, and D. Y. Xing, "Dynamical stability and superconductivity of Li-intercalated bilayer MoS2: A first-principles prediction", Phys. Rev. B 93, 104511 (2016).

· Amber McCreary, Rudresh Ghosh, Matin Amani, Jin Wang, Karel-Alexander N. Duerloo, Ankit Sharma, Karalee Jarvis, Evan J. Reed, Avinash Dongare, Sanjay K. Banerjee, Mauricio Terrones, Raju R. Namburu, and Madan Dubey, "Effects of Uniaxial and Biaxial Strain on Few-Layered Terrace Structures of MoS2 Grown by Vapor Transport", ACS Nano 10, 3186-3197 (2016).

· Ho-kwang Mao, Bin Chen, Jiuhua Chen, Kuo Li, Jung-Fu Lin, Wenge Yang, and Haiyan Zheng, "Recent Advances in High-Pressure Science and Technology", Matter Radiat. Extremes 1, 59-75 (2016).

· N. Arzate, Bernardo S. Mendoza, R. A. Vazquez-Nava, Z. Ibarra-Borja, and M. I. Alvarez-Nunez, "Optical spin injection in MoS2 monolayers", Phys. Rev. B 93, 115433 (2016).

· Mahmud Abdulsalam and Daniel P. Joubert, "Optical spectrum and excitons in bulk and monolayer MX2 (M=Zr, Hf; X=S, Se)", Phys. Status Solidi B 253, 705-711 (2016).

· Yi Zhang, Miguel Moreno Ugeda, Chenhao Jin, Su-Fei Shi, Aaron Bradley, Ana Martin-Recio, Hyejin Ryu, Jonghwan Kim, Shujie Tang, Yeongkwan Kim , Bo Zhou , Choongyu Hwang , Yulin Chen, Feng Wang, Michael F. Crommie, Zahid Hussain, Zhi-Xun Shen, and Sung-Kwan Mo, "Electronic Structure, Surface Doping and Optical Response in Epitaxial WSe2 Thin Films", Nano Lett. 16, 2485-2491 (2016).

· Yi Yang, Xiaoli Fan, Rui Pan, and Wenjun Guo, "First-principles investigations on transition-metal doped bilayer WS2", Phys. Chem. Chem. Phys. 18, 10152-10157 (2016).

· Christopher R. Ryder, Joshua D. Wood, Spencer A. Wells, and Mark C. Hersam, "Chemically Tailoring Semiconducting Two-Dimensional Transition Metal Dichalcogenides and Black Phosphorus", ACS Nano 10, 3900-3917 (2016). See also: arXiv:1603.08544v1.

· Jun Hong Park, Suresh Vishwanath, Xinyu Liu, Huawei Zhou, Sarah M. Eichfeld, Susan K. Fullerton-Shirey, Joshua A. Robinson, Randall M. Feenstra, Jacek Furdyna, Debdeep Jena, Huili Grace Xing, and Andrew C. Kummel, "Scanning Tunneling Microscopy and Spectroscopy of Air Exposure Effects on Molecular Beam Epitaxy Grown WSe2 Monolayers and Bilayers", ACS Nano 10, 4258-4267 (2016).

· A. Michail, N. Delikoukos, J. Parthenios, C. Galiotis, and K. Papagelis, "Optical detection of strain and doping inhomogeneities in single layer MoS2", Appl. Phys. Lett. 108, 173102 (2016). See also: arXiv:1804.10127.

· Miquel López-Suárez, Igor Neri, and Riccardo Rurali, "Band gap engineering of MoS2 upon compression", J. Appl. Phys. 119, 165105 (2016). See also: arXiv:1605.00150v1.

· Soonho Kwon, Kihyun Shin, Kihoon Bang, Hyun You Kim, and Hyuck Mo Lee, "CO oxidation by MoS2-supported Au19 nanoparticles: Effects of vacancy formation and tensile strain", Phys. Chem. Chem. Phys. 18, 13232-13238 (2016).

· Xia Congxin and Li Jingbo, "Recent advances in optoelectronic properties and applications of two-dimensional metal chalcogenides", J. Semicond. 37, 051001 (2016).

· Agnieszka Kuc and Thomas Heine, "On the Stability and Electronic Structure of Transition-Metal Dichalcogenide Monolayer Alloys Mo1-xXxS2-ySey with X = W, Nb", Electronics 5, 1 (2016).

· Yanxia Ye, Xiuming Dou, Kun Ding, De-Sheng Jiang, Fuhua Yang, and Baoquan Sun, "Pressure-induced K-Λ crossing in monolayer WSe2", Nanoscale 8, 10843-10848 (2016).

· F. Dybala, M. P. Polak, J. Kopaczek, P. Scharoch, K. Wu, S. Tongay, and R. Kudrawiec, "Pressure coefficients for direct optical transitions in MoS2, MoSe2, WS2, and WSe2 crystals and semiconductor to metal transitions", Sci. Rep. 6, 26663 (2016).

· Yiling Yu, Yifei Yu, Chao Xu, Andy Barrette, Kenan Gundogdu, and Linyou Cao, "Fundamental limits of exciton-exciton annihilation for light emission in transition metal dichalcogenide monolayers", Phys. Rev. B 93, 201111(R) (2016). See also: arXiv:1512.00945v3.

· Xiaoli Sun, Zhiguo Wang, Zhijie Li, and Y. Q. Fu, "Origin of Structural Transformation in Mono- and Bi-Layered Molybdenum Disulfide", Sci. Rep. 6, 26666 (2016).

· Wensong Li, Jian Peng, Yile Zhong, Duanduan Wu, Huiyu Lin, Yongjie Cheng, Zhengqian Luo, Jian Weng, Huiying Xu, and Zhiping Cai, "Orange-light passively Q-switched Pr3+-doped all-fiber lasers with transition-metal dichalcogenide saturable absorbers", Opt. Mater. Express 6, 2031-2039 (2016).

· Rui Pan, Xiao-Li Fan, Han Zhang, and Yi Yang, "First-principles investigation on the interface of transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se) monolayer on Al2O3(0001)", Comput. Mater. Sci. 122, 118-125 (2016).

· Hui Wang, Li Wang, Xiaoyan Wang, Junjie Quan, Longfei Mi, Lan Yuan, Guopeng Li, Bin Zhang, Honghai Zhong, and Yang Jiang, "High Quality MoSe2 Nanospheres with Superior Electrochemical Properties for Sodium Batteries", J. Electrochem. Soc. 163, A1627-A1632 (2016).

· Jun Kang and Lin-Wang Wang, "Robust band gap of TiS3 nanofilms", Phys. Chem. Chem. Phys. 18, 14805-14809 (2016).

· Kanak Datta and Quazi D. M. Khosru, "Electronic Properties of MoS2/MX2/MoS2 Trilayer Heterostructures: A First Principle Study", ECS J. Solid State Sci. Technol. 5, Q3001-Q3007 (2016).

· Ghazanfar Nazir, Muhammad Farooq Khan, Volodymyr Iermolenko, and Jonghwa Eom, "Two- and four-probe field-effect and Hall mobilities in transition metal dichalcogenides field-effect transistors", RSC Adv. 6, 60787-60793 (2016).

· Xiangying Su, Weiwei Ju, Ruizhi Zhang, Chongfeng Guo, Yongliang Yong, Hongling Cui, and Xiaohong Li, "Band gap modulation of transition-metal Dichalcogenide MX2 nanosheets by in-plane strain", Physica E 84, 216-222 (2016).

· Fatih Ersan, Yelda Kadioglu, Gökhan Gökoglu, Olcay Üzengi Aktürk, and Ethem Aktürk, "T-ZrS2 nanoribbons: structure and electronic properties", Philos. Mag. 96, 2074-2087 (2016).

· Lan Meng, Yuhan Zhang, Song Hu, Xiangfu Wang, Chunsheng Liu, Yandong Guo, Xinran Wang, and Xiaohong Yan, "Two dimensional WS2 lateral heterojunctions by strain modulation", Appl. Phys. Lett. 108, 263104 (2016).

· San-Dong Guo, "Spin-orbit and strain effect on power factor in monolayer MoS2", Comput. Mater. Sci. 123, 8-13 (2016). See also: arXiv:1602.03632v1.

· Iori Tanabe, Takashi Komesu, Duy Le, Takat B. Rawal, Eike F. Schwier, Mingtian Zheng, Yohei Kojima, Hideaki Iwasawa, Kenya Shimada, Talat S. Rahman, and Peter A. Dowben, "The symmetry-resolved electronic structure of 2H-WSe2(0001)", J. Phys.: Condens. Matter 28, 345503 (2016).

· V. Ongun Özçelik, Javad G. Azadani, Ce Yang, Steven J. Koester, and Tony Low, "Band alignment of two-dimensional semiconductors for designing heterostructures with momentum space matching", Phys. Rev. B 94, 035125 (2016). See also: arXiv:1603.02619v1.

· Jung Gon Kim, Won Seok Yun, Sunghwan Jo, JaeDong Lee, and Chang-Hee Cho, "Effect of interlayer interaction on exciton luminescence in atomic-layered MoS2 crystals", Sci. Rep. 6, 29813 (2016).

· Shengqi Chu, Changyong Park, and Guoyin Shen, "Structural characteristic correlated to the electronic band gap in MoS2", Phys. Rev. B 94, 020101(R) (2016).

· Yaping Miao, Yuhong Huang, Qinglong Fang, Zhi Yang, Kewei Xu, Fei Ma, and Paul K. Chu, "Tuning of electronic states and magnetic polarization in monolayered MoS2 by codpoing with transition metals and nonmetals", J. Mater. Sci. 51, 9514-9525 (2016).

· Shengchun Yang, Fuzhu Liu, Chao Wu, and Sen Yang, "Tuning Surface Properties of Low Dimensional Materials via Strain Engineering", Small 12, 4028-4047 (2016).

· Hongtao Yuan, Zhongkai Liu, Gang Xu, Bo Zhou, Sanfeng Wu, Dumitru Dumcenco, Kai Yan, Yi Zhang, Sung-Kwan Mo, Pavel Dudin, Victor Kandyba, Mikhail Yablonskikh, Alexei Barinov, Zhi-Xun Shen, Shoucheng Zhang, Ying-Sheng Huang, Xiaodong Xu, Zahid Hussain, Harold Y. Hwang, Yi Cui, and Yulin Chen, "Evolution of the Valley Position in Bulk Transition-Metal Chalcogenides and their Mono-Layer Limit", Nano Lett. 16, 4738-3745 (2016).

· Seo-Hyeon Jo, Hyung-Youl Park, Dong-Ho Kang, Jaewoo Shim, Jaeho Jeon, Seunghyuk Choi, Minwoo Kim, Yongkook Park, Jaehyeong Lee, Young Jae Song, Sungjoo Lee, and Jin-Hong Park, "Broad Detection Range Rhenium Diselenide Photodetector Enhanced by (3-Aminopropyl)Triethoxysilane and Triphenylphosphine Treatment", Adv. Mater. 28, 6711-6718 (2016).

· Manoj K. Jana and C. N. R. Rao, "Two-dimensional inorganic analogues of graphene: transition metal dichalcogenides", Phil. Trans. R. Soc. A 374, 20150318 (2016).

· Jiandong Yao, Zhaoqiang Zhen, and Guowei Yang, "Layered-material WS2/topological insulator Bi2Te3 heterostructure photodetector with ultrahigh responsivity in the range from 370 to 1550 nm", J. Mater. Chem. C 4, 7831-7840 (2016).

· Miao Zhou, Zhuolei Zhang, Keke Huang, Zhan Shi, Renguo Xie, and Wensheng Yang, "Colloidal preparation and electrocatalytic hydrogen production of MoS2 and WS2 nanosheets with controllable lateral sizes and layer numbers", Nanoscale 8, 15262-15272 (2016).

· Zonghua Wang, Chunqin Zhao, Rijun Gui, Hui Jin, Jianfei Xia, Feifei Zhang, and Yanzhi Xia, "Synthetic methods and potential applications of transition metal dichalcogenide/graphene nanocomposites", Coord. Chem. Rev. 326, 86-110 (2016).

· Soyoung Jekal and Soon Cheol Hong, "First-principles Calculation on Magnetism of 1H/1T Boundary in Monolayer MoS2", J. Korean Magn. Soc. 26, 71-75 (2016) (written in Korean).

· San-Dong Guo and Jian-Li Wang, "Spin-orbital coupling effect on the power factor in semiconducting transition-metal dichalcogenide monolayers", Semicond. Sci. Technol. 31, 095011 (2016).

· Johannes Kern, Iris Niehues, Philipp Tonndorf, Robert Schmidt, Daniel Wigger, Robert Schneider, Torsten Stiehm, Steffen Michaelis de Vasconcellos, Doris E. Reiter, Tilmann Kuhn, and Rudolf Bratschitsch, "Nanoscale Positioning of Single-Photon Emitters in Atomically Thin WSe2", Adv. Mater. 28, 7101-7105 (2016).

· Hui Xiang, Bo Xu, Jinqiu Liu, Yidong Xia, Haiming Lu, Jiang Yin, and Zhiguo Liu, "Quantum spin Hall insulator phase in monolayer WTe2 by uniaxial strain", AIP Adv. 6, 095005 (2016).

· T. S. Li, "Conduction quantization in monolayer MoS2", Chem. Phys. Lett. 663, 40-44 (2016).

· Zeineb Ben Aziza, Hugo Henck, Daniela Di Felice, Debora Pierucci, Julien Chaste, Carl H. Naylor, Adrian Balan, Yannick J. Dappe, A.T. Charlie Johnson, and Abdelkarim Ouerghi, "Bandgap inhomogeneity of MoS2 monolayers on epitaxial graphene bilayers in van der Waals p-n junction", Carbon 110, 396-403 (2016).

· Jaeho Jeon, Jinhee Lee, Gwangwe Yoo, Jin-Hong Park, Geun Young Yeom, Yun Hee Jang, and Sungjoo Lee, "Size-tunable synthesis of monolayer MoS2 nanoparticles and their applications in non-volatile memory devices", Nanoscale 8, 16995-17003 (2016).

· J. Mohanraj, V. Velmurugan, and S. Sivabalan, "Transition metal dichalcogenides based saturable absorbers for pulsed laser technology", Opt. Mater. 60, 601-617 (2016).

· Chengbing Qin, Yan Gao, Zhixing Qiao, Liantuan Xiao, and Suotang Jia, "Atomic-Layered MoS2 as a Tunable Optical Platform", Adv. Opt. Mater. 4, 1429-1456 (2016).

· Joice Sophia Ponraj, Zai-Quan Xu, Sathish Chander Dhanabalan, Haoran Mu, Yusheng Wang, Jian Yuan, Pengfei Li, Siddharatha Thakur, Mursal Ashrafi, Kenneth Mccoubrey, Yupeng Zhang, Shaojuan Li, Han Zhang, and Qiaoliang Bao, "Photonics and optoelectronics of two-dimensional materials beyond graphene", Nanotechnology 27, 462001 (2016).

· Masahiro Matsunaga, Ayaka Higuchi, Guanchen He, Tetsushi Yamada, Peter Krüger, Yuichi Ochiai, Yongji Gong, Robert Vajtai, Pulickel M. Ajayan, Jonathan P. Bird, and Nobuyuki Aoki, "Nanoscale-Barrier Formation Induced by Low-Dose Electron-Beam Exposure in Ultrathin MoS2 Transistors", ACS Nano 10, 9730-9737 (2016).

· Fang Wang, Ian A Kinloch, Daniel Wolverson, Reshef Tenne, Alla Zak, Eoghan O'Connell, Ursel Bangert, and Robert J. Young , "Strain-induced phonon shifts in tungsten disulfide nanoplatelets and nanotubes", 2D Mater. 4, 015007 (2016).

· Rodrick Kuate Defo, Shiang Fang, Sharmila N. Shirodkar, Georgios A. Tritsaris, Athanasios Dimoulas, and Efthimios Kaxiras, "Strain dependence of band gaps and exciton energies in pure and mixed transition-metal dichalcogenides", Phys. Rev. B 94, 155310 (2016).

· Heng-Jui Liu, Jheng-Cyuan Lin, Yue-Wen Fang, Jing-Ching Wang, Bo-Chao Huang, Xiang Gao, Rong Huang, Philip R. Dean, Peter D. Hatton, Yi-Ying Chin, Hong-Ji Lin, Chien-Te Chen, Yuichi Ikuhara, Ya-Ping Chiu, Chia-Seng Chang, Chun-Gang Duan, Qing He, and Ying-Hao Chu, "A Metal-Insulator Transition of the Buried MnO2 Monolayer in Complex Oxide Heterostructure", Adv. Mater. 28, 9142-9151 (2016). See also: arXiv2501.19289v1.

· X. Du, Z. Y. Wang, and G. Q. Huang, "Rashba-type spin splitting and the electronic structure of ultrathin Pb/MoTe2 heterostructure", Mater. Res. Express 3, 116302 (2016).

· Jie Mao, Yongqiang Yu, Liu Wang, Xiujuan Zhang, Yuming Wang, Zhibin Shao, and Jiansheng Jie, "Ultrafast, Broadband Photodetector Based on MoSe2/Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent Electrode", Adv. Sci. 3, 1600018 (2016).

· Kyunghee Choi, Young Tack Lee, and Seongil Im, "Two-dimensional van der Waals nanosheet devices for future electronics and photonics", Nano Today 11, 626-643 (2016).

· Won Seok Yun and J. D. Lee, "Schottky barrier tuning of the single-layer MoS2 on magnetic metal substrates through vacancy defects and hydrogenation", Phys. Chem. Chem. Phys. 18, 31027-31032 (2016).

· Jun Young Kim, Jeongyong Kim, and Jinsoo Joo, "Surface-enhanced Raman scattering for 2-D WSe2 hybridized with functionalized gold nanoparticles", Opt. Express 24, 27546-27553 (2016).

· Atsushi Ando, Takahiro Mori, and Toshitaka Kubo, "Electronics of Compound Materials Nanosheets", Hyomen Kagaku 37, 527-534 (2016).

· Jie Li, Chenli Hu, Hao Wu, Zhixuan Liu, Shuai Cheng, Wenfeng Zhang, Haibo Shu, and Haixin Chang, "Facile Preparation of Single MoS2 Atomic Crystals with Highly Tunable Photoluminescence by Morphology and Atomic Structure", Cryst. Growth Des. 16, 7094-7101 (2016).

· Julia Wiktor and Alfredo Pasquarello, "Absolute deformation potentials of two-dimensional materials", Phys. Rev. B 94, 245411 (2016).

· Xu Zhao, Peng Chen, and Tianxing Wang, "Controlled electronic and magnetic properties of WS2 monolayer by doping transition-metal atoms", Superlattice Microst. 100, 252-257 (2016).

· Wei Chen, Yayuan Liu, Yuzhang Li, Jie Sun, Yongcai Qiu, Chong Liu, Guangmin Zhou, and Yi Cui, "In situ Electrochemically Derived Nanoporous Oxides from Transition Metal Dichalcogenides for Active Oxygen Evolution Catalysts", Nano Lett. 16, 7588-7596 (2016).

· Ruishen Meng, Junke Jiang, Qiuhua Liang, Qun Yang, Chunjian Tan, Xiang Sun, and Xianping Chen, "Design of graphene-like gallium nitride and WS2/WSe2 nanocomposites for photocatalyst applications", Sci. China Mater. 59, 1027-1036 (2016).

· Jorge Quereda, Robert Biele, Gabino Rubio-Bollinger, Nicolás; Agraït, Roberto D'Agosta, and Andrés Castellanos-Gomez, "Strong Quantum Confinement Effect in the Optical Properties of Ultrathin α-In2Se3", Adv. Opt. Mater. 4, 1939-1943 (2016).

· Saurabh V. Suryavanshi and Eric Pop, "S2DS: Physics-based compact model for circuit simulation of two-dimensional semiconductor devices including non-idealities", J. Appl. Phys. 120, 224503 (2016). See also: arXiv:1610.08489.

· Xiaokun Gu and Ronggui Yang, "PHONON TRANSPORT AND THERMAL CONDUCTIVITY IN TWO-DIMENSIONAL MATERIALS (Book Chapter)", Annual Review of Heat Transfer (Editor-in-Chef: Gang Chen) 19, Chapter 1, pp. 1-65 (2016) (Begell House, Inc.). See also: arXiv:1509.07762.

2017 {113}

· Xiaogan Li, Xiaoxin Li, Zhi Li, Jing Wang, and Jianwei Zhang, "WS2 nanoflakes based selective ammonia sensors at room temperature", Sens. Actuators B 240, 273-277 (2017).

· M. Luo, Y. H. Shen, and T. L. Yin, "Ab initio study of electronic and magnetic properties in TM-doped 2D silicon carbide", Physica E 85, 280-284 (2017).

· Tao Lu, Shanmu Dong, Chuanjian Zhang, Lixue Zhang, and Guanglei Cui, "Fabrication of transition metal seleniedes and their applications in energy storage", Coord. Chem. Rev. 332, 75-99 (2017).

· Chenxi Zhang, Cheng Gong, Yifan Nie, Kyung-Ah Min, Chaoping Liang, Young Jun Oh, Hengji Zhang, Weihua Wang, Suklyun Hong, Luigi Colombo, Robert M. Wallace, and Kyeongjae Cho, "Systematic study of electronic structure and band alignment of monolayer transition metal dichalcogenides in Van der Waals heterostructures", 2D Mater. 4, 015026 (2017).

· M. Luo, Y.-H. Shen, and T. L. Yin, "Tunable magnetism in 2D silicon carbide doped with Co and Fe dopants: Ab initio study", Optik 130, 589-593 (2017).

· Mosayeb Naseri and Jaafar Jalilian, "Electronic and optical investigations of Be2C monolayer: Under stress and strain conditions", Mater. Res. Bull. 88, 49-55 (2017).

· Zhongwei Zhang, Yuee Xie, Yulou Ouyang, and Yuanping Chen, "A systematic investigation of thermal conductivities of transition metal dichalcogenides", Int. J. Heat Mass Transfer 108, 417-422 (2017). See also: arXiv:1612.05339.

· Baiqing You, Xiaocha Wang, Guifeng Chen, and Zhida Zheng, "Prediction of electronic structure of van der Waals interfaces: Benzene adsorbed monolayer MoS2, WS2 and WTe2", Physica E 88, 87-96 (2017).

· Fabio Bussolotti, Zheng Zhang, Hiroyo Kawai, and Kuan Eng Johnson Goh, "A Lab-scale Spin and Angular Resolved Photoemission Spectroscopy Capability for 2D Valleytronics", MRS Adv. 2, 1527-1532 (2017).

· Xiaoyin Li, Shunhong Zhang, and Qian Wang, "Topological insulating states in 2D transition metal dichalcogenides induced by defects and strain", Nanoscale 9, 562-569 (2017).

· Jiten P. Tailor, Devangini S. Trivedi, S. H. Chaki, M. D. Chaudhary, and M. P. Deshpandeb, "Study of chemical vapour transport (CVT) grown WSe1.93 single crystals", Mater. Sci. Semicond. Proc. 61, 11-16 (2017).

· Sanghyuck Yu, Jin Sung Kim, Pyo Jin Jeon, Jongtae Ahn, Jae Chul Park, and Seongil Im, "Transition Metal Dichalcogenide-Based Transistor Circuits for Gray Scale Organic Light-Emitting Displays", Adv. Funct. Mater. 27, 1603682 (2017).

· Daniel J. Trainer, Aleksei V. Putilov, Cinzia Di Giorgio, Timo Saari, Baokai Wang, Mattheus Wolak, Ravini U. Chandrasena, Christopher Lane, Tay-Rong Chang, Horng-Tay Jeng, Hsin Lin, Florian Kronast, Alexander X. Gray, Xiaoxing X. Xi, Jouko Nieminen, Arun Bansil, and Maria Iavarone, "Inter-Layer Coupling Induced Valence Band Edge Shift in Mono- to Few-Layer MoS2", Sci. Rep. 7, 40559 (2017).

· Kento Tada, Takashi Funatani, Satoru Konabe, Kenji Sasaoka, Matsuto Ogawa, Satofumi Souma, and Takahiro Yamamoto, "Modulations of thermal properties of graphene by strain-induced phonon engineering", Jpn. J. Appl. Phys. 56, 025102 (2017).

· Lijun Li, Inyeal Lee, Doo-Hyeb Youn, and Gil-Ho Kim, "Hopping conduction and random telegraph signal in an exfoliated multilayer MoS2 field-effect transistor", Nanotechnology 28, 075201 (2017).

· Yi Ding and Yanli Wang, "Surface functionalization of molybdenum dinitride nanosheet by halogen and alkali atoms: A first-principles study", J. Mater. Chem. C 5, 683-689 (2017).

· Jin Wang, Raju R. Namburu, Madan Dubey, and Avinash M. Dongare, "Origins of Ripples in CVD-Grown Few-layered MoS2 Structures under Applied Strain at Atomic Scales", Sci. Rep. 7, 40862 (2017).

· Ji-Hyun Hur, Junghak Park, and Sanghun Jeon, "A theoretical modeling of photocurrent generation and decay in layered MoS2 thin-film transistor photosensors", J. Phys. D: Applied. Phys. 50, 065105 (2017).

· Xia Wei, Faguang Yan, Chao Shen, Quanshan Lv, and Kaiyou Wang, "Photodetectors based on junctions of two-dimensional transition metal dichalcogenides", Chin. Phys. B 26, 038504 (2017). See also: arXiv:1702.02260.

· M. Blauth, J. Harms, M. Prechtl, J. J. Finley, and M. Kaniber, "Enhanced optical activity of atomically thin MoSe2 proximal to nanoscale plasmonic slot-waveguides", 2D Mater. 4, 021011 (2017).

· Yu Chai, Shanshan Su, Dong Yan, Mihrimah Ozkan, Roger Lake, and Cengiz S. Ozkan, "Strain Gated Bilayer Molybdenum Disulfide Field Effect Transistor with Edge Contacts", Sci. Rep. 7, 41593 (2017).

· Bo Han, Fangfei Li, Liang Li, Xiaoli Huang, Yuanbo Gong, Xinpeng Fu, Hanxue Gao, Qiang Zhou, and Tian Cui, "Correlatively Dependent Lattice and Electronic Structural Evolutions in Compressed Monolayer Tungsten Disulfide", J. Phys. Chem. Lett. 8, 941-947 (2017).

· Abhijith Prakash and Joerg Appenzeller, "Bandgap Extraction and Device Analysis of Ionic Liquid Gated WSe2 Schottky Barrier Transistors", ACS Nano 11, 1626-1632 (2017).

· Xiangying Su, Hongling Cui, Weiwei Ju, Yongliang Yong, Qingxiao Zhou, Xiaohong Li, and Fengzhang Ren, "MoS2-MX2 in-plane superlattices: Electronic properties and bandgap engineering via strain", Comput. Mater. Sci. 132, 30-35 (2017).

· Suresh Alagarsamy and Natarajan Soundararajan, "The conventional cell and the primitive cell electronic structure of anatase titanium dioxide crystal", Mater. Res. Express 4, 036301 (2017).

· Deji Akinwande, Christopher J. Brennan, J. Scott Bunch, Philip Egberts, Jonathan R. Felts, Huajian Gao, Rui Huang, Joon-Seok Kim, Teng Li, Yao Li, Kenneth M. Liechti, Nanshu Lu, Harold S. Park, Evan J. Reed, Peng Wang, Boris I. Yakobson, Teng Zhang, Yong-Wei Zhang, Yao Zhou, and Yong Zhu, "A review on mechanics and mechanical properties of 2D materials-Graphene and beyond", Extreme Mech. Lett. 13, 42-77 (2017). See also: arXiv:1611.01555.

· Joydeep Rakshit, Kartik Mohanram, Runlai Wan, Kai Tak Lam, and Jing Guo, "Monolayer Transistor SRAMs: Toward Low-Power, Denser Memory Systems", ACM J. Emerg. Tech. Com. 13, 18 (2017).

· Fu-Yu Shih, Yueh-Chun Wu, Yi-Siang Shih, Ming-Chiuan Shih, Po-Hsun Ho, Chun-Wei Chen, Yang-Fang Chen, Ya-Ping Chiu, and Wei-Hua Wang, "Environment-insensitive and gate-controllable photocurrent enabled by bandgap engineering of MoS2 junctions", Sci. Rep. 7, 44768 (2017). See also: arXiv:1703.01110.

· Young Ki Hong, Na Liu, Demin Yin, Seongin Hong, Dong Hak Kim, Sunkook Kim, Woong Choi, and Youngki Yoon, "Recent progress in high-mobility thin-film transistors based on multilayer 2D materials", J. Phys. D: Appl. Phys. 50, 164001 (2017).

· Yanhua Xu, Xiaofang Jiang, Yanqi Ge, Zhinan Guo, Zhikai Zeng, Qinghua Xu, Han Zhang, Xuefeng Yu, and Dianyuan Fan, "Size-dependent nonlinear optical properties of black phosphorus nanosheets and its applications in ultrafast photonics", J. Mater. Chem. C 5, 3007-3013 (2017).

· Kirsten T. Winther and Kristian S. Thygesen, "Band structure engineering in van der Waals heterostructures via dielectric screening: the GΔW method", 2D Mater. 4, 025059 (2017). See also: arXiv:1703.03188.

· Wanshun Xia, Liping Dai, Peng Yu, Xin Tong, Wenping Song, Guojun Zhang, and Zhiming M. Wang, "Recent progress in van der Waals heterojunctions", Nanoscale 9, 4324-4365 (2017).

· Linlin Wei, Shuaishuai Sun, Cong Guo, Zhongwen Li, Kai Sun, Yu Liu, Wenjian Lu, Yuping Sun, Huanfang Tian, Huaixin Yang, and Jianqi Li, "Dynamic diffraction effects and coherent breathing oscillations in ultrafast electron diffraction in layered 1T-TaSeTe", Struct. Dyn. 4, 044012 (2017).

· Ping Liu, Hao Li, Lei Yang, Benliang Zhao, Maozhong Li, and Bin Xiang, "Rational synthesis of bandgap-tunable MS2(1-x)Se2x (M = Mo, W) alloys and their physical properties", J. Alloys Compd. 710, 628-634 (2017).

· Liang Ma, Jun Dai, and Xiao Cheng Zeng, "Two-Dimensional Single-Layer Organic-Inorganic Hybrid Perovskite Semiconductors", Adv. Energy Mater. 7, 1601731 (2017).

· Fengcheng Wu, Timothy Lovorn, and A. H. MacDonald, "Topological Exciton Bands in Moiré Heterojunctions", Phys. Rev. Lett. 118, 147401 (2017). See also: arXiv:1610.03855.

· Shi-Jun Liang, Bo Liu, Wei Hu, Kun Zhou, and L. K. Ang, "Thermionic Energy Conversion Based on Graphene van der Waals Heterostructures", Sci. Rep. 7, 46211 (2017).

· Yuanbo Gong, Qiang Zhou, Xiaoli Huang, Bo Han, Xinpeng Fu, Hanxue Gao, Fangfei Li, and Tian Cui, "Pressure-Induced Photoluminescence Adjustment and Lattice Disorder in Monolayer WSe2", ChemNanoMat 3, 238-244 (2017).

· Ivan Verzhbitskiy and Goki Eda, "Chalcogenide Nanosheets: Optical Signatures of Many-Body Effects and Electronic Band Structure (Book Chapter)", Inorganic Nanosheets and Nanosheet-Based Materials (Editors: Teruyuki Nakato, Jun Kawamata, and Shinsuke Takagi), Chapter 5 (2017) (Springer Japan).

· Rajib Sahu, Dhanya Radhakrishnan, Badri Vishal, Devendra Singh Negi, Anomitra Sil, Chandrabhas Narayana, and Ranjan Datta, "Substrate induced tuning of compressive strain and phonon modes in large area MoS2 and WS2 van der Waals epitaxial thin films", J. Cryst. Growth 470, 51-57 (2017). See also: arXiv:1610.05852.

· Kanak Datta and Quazi D. M. Khosru, "Simulation of thin-TFETs using transition metal dichalcogenides: effect of material parameters, gate dielectric on electrostatic device performance", J. Comput. Electro. 16, 228-239 (2017).

· D. G. Kvashnin and L. A. Chernozatonskii, "Electronic and transport properties of heterophase compounds based on MoS2", JETP Lett. 105, 250-254 (2017).

· Ji-Hyun Hur, Junghak Park, Deok-kee Kim, and Sanghun Jeon, "Model for the Operation of a Monolayer MoS2 Thin-Film Transistor with Charges Trapped near the Channel Interface", Phys. Rev. Applied 7, 044030 (2017).

· Xuefei Wang, Xuliang Chen, Yonghui Zhou, Changyong Park, Chao An, Ying Zhou, Ranran Zhang, Chuanchuan Gu, Wenge Yang, and Zhaorong Yang, "Pressure-induced iso-structural phase transition and metallization in WSe2", Sci. Rep. 7, 46694 (2017).

· Hyun Jeong, Hye Min Oh, Anisha Gokarna, Hyun Kim, Seok Joon Yun, Gang Hee Han, Mun Seok Jeong, Young Hee Lee, and Gilles Lerondel, "Integrated Freestanding Two-dimensional Transition Metal Dichalcogenides", Adv. Mater. 29, 1700308 (2017).

· Maximilian Baumgartner, Richard Weihrich, and Tom Nilges, "Inorganic SnIP-type double helices in main group chemistry", Chem. Eur. J. 23, 6452-6457 (2017).

· Quan Li, Liang Xu, Kai-Wu Luo, Xiao-Fei Li, Wei-Qing Huang, Ling-Ling Wang, and Ya-Bin Yu, "Electric-field-induced widely tunable direct and indirect band gaps in hBN/MoS2 van der Waals heterostructures", J. Mater. Chem. C 5, 4426-4434 (2017).

· Hongxing Li, Min Huang, and Gengyu Cao, "Magnetic properties of atomic 3d transition-metal chains on S-vacancy-line templates of monolayer MoS2: effects of substrate and strain", J. Mater. Chem. C 5, 4557-4564 (2017).

· Chao Xie, Chunhin Mak, Xiaoming Tao, and Feng Yan, "Photodetectors Based on Two-Dimensional Layered Materials Beyond Graphene", Adv. Funct. Mater. 27, 1603886 (2017).

· Jongyeol Baek, Demin Yin, Na Liu, Inturu Omkaram, Chulseung Jung, Healin Im, Seongin Hong, Seung Min Kim, Young Ki Hong, Jaehyun Hur, Youngki Yoon, and Sunkook Kim, "A highly sensitive chemical gas detecting transistor based on highly crystalline CVD-grown MoSe2 films", Nano Res. 10, 1861-1871 (2017).

· Yan Li and Fei Ma, "Size and strain tunable band alignment of black-blue phosphorene lateral heterostructure", Phys. Chem. Chem. Phys. 19, 12466-12472 (2017).

· Maciej J. Szary, Marek T. Michalewicz, and Marian W. Radny, "Bonding and electronics of the MoTe2/Ge interface under strain", Phys. Rev. B 95, 205421 (2017).

· Youngsin Park, Nannan Li, Christopher C. S. Chan, Benjamin P. L. Reid, Robert A. Taylor, and Hyunsik Im, "Optical polarization in mono and bilayer MoS2", Curr. Appl. Phys. 17, 1153-1157 (2017).

· Angel Morales-Garcia, Elena del Corro, Martin Kalbac, and Otakar Frank, "Tuning the electronic properties of monolayer and bilayer transition metal dichalcogenide compounds under direct out-of-plane compression", Phys. Chem. Chem. Phys. 19, 13333-13340 (2017).

· Matěj Velický and Peter S. Toth, "From two-dimensional materials to their heterostructures: An electrochemist's perspective", Appl. Mater. Today 8, 68-103 (2017).

· Eric Singh, Ki Seok Kim, Geun Young Yeom, and Hari Singh Nalwa, "Two-dimensional transition metal dichalcogenides-based counter electrodes for dye-sensitized solar cells", RSC Adv. 7, 28234-28290 (2017). See also: arXiv:1703.04084.

· Xinming Li, Li Tao, Zefeng Chen, Hui Fang, Xuesong Li, Xinran Wang, Jian-Bin Xu, and Hongwei Zhu, "Graphene and related two-dimensional materials: Structure-property relationships for electronics and optoelectronics", Appl. Phys. Rev. 4, 021306 (2017).

· Takashi Komesu, Duy Le, Iori Tanabe, Eike F. Schwier, Yohei Kojima, Mingtian Zheng, Kazuaki Taguchi, Koji Miyamoto, Taichi Okuda, Hideaki Iwasawa, Kenya Shimada, Talat S. Rahman, and Peter A. Dowben, "Adsorbate doping of MoS2 and WSe2: the influence of Na and Co", J. Phys.: Condens. Matter 29, 285501 (2017).

· Vladan Mlinar, "Electronic and optical properties of nanostructured MoS2 materials: Influence of reduced spatial dimensions and edge effects", Phys. Chem. Chem. Phys. 19, 15891-15902 (2017).

· Mohamed Moustafa, Anke Wasnick, Christoph Janowitz, and Recardo Manzke, "Temperature shift of the absorption edge and Urbach tail of ZrSxSe2-x single crystals", Phys. Rev. B 95, 245207 (2017).

· Sol Kim and Seung-Hoon Jhi, "Stabilization of 1T' phase WTe2 by scalar relativistic effect", Appl. Phys. Lett. 110, 263104 (2017).

· Xu Wang, Juan Du, and Shuyi Wei, "Impurity characteristics of group V and VII element-doped two-dimensional ZrSe2 monolayer", Physica E 93, 279-283 (2017).

· Katherine M. Price, Kirstin E. Schauble, Felicia A. McGuire, Damon B. Farmer, and Aaron D. Franklin, "Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition", ACS Appl. Mater. Interfaces 9, 23072-23080 (2017).

· Liang Li, LeJing Pi, HuiQiao Li, and TianYou Zhai, "Photodetectors based on two-dimensional semiconductors: Progress, opportunity", Chin. Sci. Bull. 62, 3134-3153 (2017) (written in Chinese).

· Hongwei Liu and Junpeng Lu, "Exciton dynamics in tungsten dichalcogenide monolayers", Phys. Chem. Chem. Phys. 19, 17877-17882 (2017).

· Altaf Ur Rahman, Gul Rahman, and Victor M. Garcia-Suarez, "Development of spontaneous magnetism and half-metallicity in monolayer MoS2", J. Magn. Magn. Mater. 443, 343-351 (2017).

· Youngsin Park, Sang Wook Han, Robert Taylor, Christopher C. S. Chan , Benjamin Reid, Yongcheol Jo, Nammi Kim , Hyunsik Im, and Kwang S. Kim, "Interplay between many body effects and Coulomb screening in optical bandgap of atomically thin MoS2", Nanoscale 9, 10647-10652 (2017).

· Dain Lee, Seongchan Kim, Yeontae Kim, and Jeong Ho Cho, "One-Transistor-One-Transistor (1T1T) Optoelectronic Nonvolatile MoS2 Memory Cell with Nondestructive Read-Out", ACS Appl. Mater. Interfaces 9, 26357-26362 (2017).

· R. Szczęśniak, A. P. Durajski, and M. W. Jarosik, "Metallization and superconductivity in Ca-intercalated bilayer MoS2", J. Phys. Chem. Solids 111, 254-257 (2017).

· N. Salami and A. A. Shokri, "First-principles study of strain-induced charge polarization in a molybdenum disulfide monolayer", Scientia Iranica F 24, 1724-1733 (2017).

· Uttiya Dasgupta, Soumyo Chatterjee, and Amlan J. Pal, "Thin-film formation of 2D MoS2 and its application as a hole-transport layer in planar perovskite solar cells", Sol. Ener. Mat. Sol. C. 172, 353-360 (2017).

· E. Mostaani, M. Szyniszewski, C. H. Price, R. Maezono, M. Danovich, R. J. Hunt, N. D. Drummond, and V. I. Fal'ko, "Diffusion quantum Monte Carlo study of excitonic complexes in two-dimensional transition-metal dichalcogenides", Phys. Rev. B 96, 075431 (2017).

· Praveena manimunda, Yusuke Nakanishi, Y. M. Jaques, Sandhya Susarla, Cristiano Woellner, Sanjit Bhowmick, S. A. Syed Asif, Douglas S. Galvao, Chandra Sekhar Tiwary, and Pulickel M. Ajayan, "Nanoscale deformation and friction characteristics of atomically thin WSe2 and heterostructure using Nanoscratch and Raman spectroscopy", 2D Mater. 4, 045005 (2017).

· Dahai Li, Xiongfei Song, Jiping Xu, Ziyi Wang, Rongjun Zhang, Peng Zhou, Hao Zhang, Renzhong Huang, Songyou Wang, Yuxiang Zheng, David Wei Zhang, and Liangyao Chen, "Optical properties of thickness-controlled MoS2 thin films studied by spectroscopic ellipsometry", Appl. Surf. Sci. 421, 884-890 (2017).

· Xiancui Su, Hongkun Nie, Yiran Wang, Guoru Li, Bingzheng Yan, Baitao Zhang, Kejian Yang, and Jingliang He, "Few-layered ReS2 as saturable absorber for 2.8 µm solid state laser", Opt. Lett. 42, 3502-3505 (2017).

· Xiangying Su, Hongling Cui, Weiwei Ju, Yongliang Yong, and Xiaohong Li, "First-principles investigation of MoS2 monolayer adsorbed on SiO2 (0001) Surface", Mod. Phys. Lett. B 31, 1750229 (2017).

· Željko Šljivančanin and Milivoj Belić, "Graphene/MoS2 heterostructures as templates for growing two-dimensional metals: Predictions from ab initio calculations", Phys. Rev. Mater. 1, 044003 (2017).

· Yoon-Ho Choi, Dong-Hyeok Lim, Jae-Hun Jeong, Dambi Park, Kwang-Sik Jeong, Minju Kim, Aeran Song, Hee-Suk Chung, Kwun-Bum Chung, Yeonjin Yi, and Mann-Ho Cho, "Characterization of Rotational Stacking Layers in Large-Area MoSe2 Film Grown by Molecular Beam Epitaxy and Interaction with Photon", ACS Appl. Mater. Interfaces 9, 30786-30796 (2017).

· Qiyi Zhao, Yaohui Guo, Keyu Si, Zhaoyu Ren, Jintao Bai, and Xinlong Xu, "Elastic, electronic, and dielectric properties of bulk and monolayer ZrS2, ZrSe2, HfS2, HfSe2 from van der Waals density-functional theory", Phys. Status Solidi B 254, 1700033 (2017).

· Jianlu Wang, Hehai Fang, Xudong Wang, Xiaoshuang Chen, Wei Lu, and Weida Hu, "Recent Progress on Localized Field Enhanced Two-dimensional Material Photodetectors from Ultraviolet-Visible to Infrared", Small 13, 1700894 (2017).

· G. Pirruccio, M. Ramezani, and J. Gómez Rivas, "Enhancing light absorption in graphene with plasmonic lattice", Europhys. Lett. 119, 17006 (2017).

· Puqing Jiang, Xin Qian, Xiaokun Gu, and Ronggui Yang, "Probing Anisotropic Thermal Conductivity of Transition Metal Dichalcogenides MX2 (M = Mo, W and X = S, Se) using Time-Domain Thermoreflectance", Adv. Mater. 29, 1701068 (2017).

· Manoj K. Jana and C. N. R. Rao, "Transition Metal Dichalcogenides and Other Layered Materials (Book Chapter)", 2D Inorganic Materials beyond Graphene (Editors: C. N. R. Rao and U. V. Waghmare), Chapter 1, pp. 1-65 (2017) (World Scientific).

· Tribhuwan Pandey, Swastibrata Bhattacharyya, and Abhishek K. Singh, "Strain Dependent Properties of 2D MX2 (M = Mo and W; X = S, Se and Te) (Book Chapter)", 2D Inorganic Materials beyond Graphene (Editors: C. N. R. Rao and U. V. Waghmare), Chapter 9, pp. 349-387 (2017) (World Scientific).

· Wen-Song Li, Quan Ma, Jia-Ji Wu, Hui-Ying Xu, and Zhi-Ping Cai, "Investigation on the effect of output mirror transmission in WS2-based red-light passively Q-switched Pr:ZBLAN all-fiber lasers", Appl. Opt. 56, 7749-7755 (2017).

· Yuanzhi Hong, Changsheng Li, Di Li, Zhenyuan Fang, Bifu Luo, Xu Yan, Hongqiang Shen, Baodong Mao, and Weidong Shi, "Precisely tunable thickness of graphitic carbon nitride nanosheets for visible-light-driven photocatalytic hydrogen evolution", Nanoscale 9, 14103-14110 (2017).

· Francis Opoku, Krishna Kuben Govender, Cornelia Gertina Catharina Elizabeth van Sittert, and Penny Poomani Govender, "Role of MoS2 and WS2 monolayers on the photocatalytic hydrogen production and pollutant degradation of monoclinic BiVO4: A first-principles study", New J. Chem. 41, 11701-11713 (2017).

· Kibum Kang, Kan-Heng Lee, Yimo Han, Hui Gao, Saien Xie, David A. Muller, and Jiwoong Park, "Layer-by-layer assembly of two-dimensional materials into wafer-scale heterostructures", Nature 550, 229-233 (2017).

· Minglei Sun, Jyh-Pin Chou, Jin Yu, and Wencheng Tang, "Effects of structural imperfection on the electronic properties of graphene/WSe2 heterostructures", J. Mater. Chem. C 5, 10383-10390 (2017).

· Wei-Ting Hsu, Li-Syuan Lu, Dean Wang, Jing-Kai Huang, Ming-Yang Li, Tay-Rong Chang, Yi-Chia Chou, Zhen-Yu Juang, Horng-Tay Jeng, Lain-Jong Li, and Wen-Hao Chang, "Evidence of indirect gap in monolayer WSe2", Nat. Commun. 8, 929 (2017).

· Jun Hong Park, Atresh Sanne, Yuzheng Guo, Matin Amani, Kehao Zhang, Hema C. P. Movva, Joshua A. Robinson, Ali Javey, John Robertson, Sanjay K. Banerjee, and Andrew C. Kummel, "Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface", Sci. Adv. 3, e1701661 (2017).

· Zahra Torbatian and Reza Asgari, "Plasmon modes of bilayer molybdenum disulfide: A density functional study", J. Phys.: Condens. Matter 29, 465701 (2017). See also: arXiv:1702.07170.

· Z. Y. Wang, W. Xia, and G. Q. Huang, "Li-intercalated bilayer SnS2: A potential superconductor", Physica C 543, 52-57 (2017).

· Francis Opoku, Krishna Kuben Govender, Cornie van Sittert, and Penny P. Govender, "Charge transport, interfacial interactions and synergistic mechanism in BiNbO4/MWO4 (M = Zn and Cd) heterostructure for hydrogen production: insights from a DFT+U study", Phys. Chem. Chem. Phys. 19, 28401-28413 (2017).

· Qianze Li, Liangpo Tang, Caixin Zhang, Dan Wang, Qin-Jun Chen, Ye-Xin Feng, Li-Ming Tang, and Ke-Qiu Chen, "Seeking the Dirac cones in the MoS2/WSe2 van der Waals heterostructure", Appl. Phys. Lett. 111, 171602 (2017).

· Dimple, Nityasagar Jena, Ashima Rawat, and Abir De Sarkar, "Strain and pH facilitated artificial photosynthesis in monolayer MoS2 nanosheets", J. Mater. Chem. A 5, 22265-22276 (2017).

· Lei Wang, Xiaohong Ji, Fei Chen, and Qinyuan Zhang, "Temperature-dependent properties of monolayer MoS2 annealed in Ar diluted S atmosphere: an experimental and first-principles study", J. Mater. Chem. C 5, 11138-11143 (2017).

· Lei Fu1, Yi Wan, Ning Tang, Yi-min Ding, Jing Gao, Jiachen Yu, Hongming Guan, Kun Zhang, Weiying Wang, Caifeng Zhang, Jun-jie Shi, Xiang Wu, Su-Fei Shi, Weikun Ge, Lun Dai, and Bo Shen, "K-Λ crossover transition in the conduction band of monolayer MoS2 under hydrostatic pressure", Sci. Adv. 3, e1700162 (2017).

· Emma P. Mukhokosi, Saluru B. Krupanidhi, and Karuna K. Nanda, "Band Gap Engineering of Hexagonal SnSe2 Nanostructured Thin Films for Infra-Red Photodetection", Sci. Rep. 7, 15215 (2017).

· Yosslen Aray, "Exploring the electron density localization in single MoS2 monolayers by means of a localize-electrons detector and the quantum theory of atoms in molecules", AIP Adv. 7, 115106 (2017).

· T. Finge, F. Riederer, M. R. Mueller, T. Grap, K. Kallis, and J. Knoch, "Investigations on Field-Effect Transistors Based on Two-Dimensional Materials", Ann. Phys. (Berlin) 529, 1700087 (2017).

· Pengfei Shen, Xin Ma, Zhou Guan, Quanjun Li, Huafang Zhang, Ran Liu, Bo Liu, Xigui Yang, Qing Dong, Tian Cui, and Bingbing Liu, "Linear Tunability of the Band Gap and Two-Dimensional (2D) to Three-Dimensional (3D) Isostructural Transition in WSe2 under High Pressure", J. Phys. Chem. C 121, 26019-26026 (2017).

· Ming-Fu Lin, Vidya Kochat, Aravind Krishnamoorthy, Lindsay Bassman, Clemens Weninger, Qiang Zheng, Xiang Zhang, Amey Apte, Chandra Sekhar Tiwary, Xiaozhe Shen, Renkai Li, Rajiv Kalia, Pulickel Ajayan, Aiichiro Nakano, Priya Vashishta, Fuyuki Shimojo, Xijie Wang, David M. Fritz, and Uwe Bergmann, "Ultrafast non-radiative dynamics of atomically thin MoSe2", Nat. Commun. 8, 1745 (2017).

· Wenxu Zhang, Jiantao Qin, Zhishuo Huang, and Wanli Zhang, "The mechanism of layer number and strain dependent bandgap of 2D crystal PtSe2", J. Appl. Phys. 122, 205701 (2017). See also: arXiv:1605.08536.

· Won Seok Yun and J. D. Lee, "Two-dimensional semiconductors ZrNCl and HfNCl: Stability, electric transport, and thermoelectric proeprteis", Sci. Rep. 7, 17330 (2017).

· H. Zhang, Z. H. Fu, D. Legut, T. C. Germannd, and R. F. Zhang, "Stacking stability and sliding mechanism in weakly bonded 2D transition metal carbides by van der Waals force", RSC Adv. 7, 55912-55919 (2017).

· Kuang-Chung Wang, Teodor K. Stanev, Daniel Valencia, James Charles, Alex Henning, Vinod K. Sangwan, Aritra Lahiri, Daniel Mejia, Prasad Sarangapani, Michael Povolotskyi, Aryan Afzalian, Jesse Maassen, Gerhard Klimeck, Mark C. Hersam, Lincoln J. Lauhon, Nathaniel P. Stern, and Tillmann Kubis, "Control of interlayer physics in 2H transition metal dichalcogenides", J. Appl. Phys. 122, 224302 (2017). See also: arXiv:1703.02191.

· Yuanfeng Xu, Hao Zhang, Hezhu Shao, Gang Ni, Jing Li, Hongliang Lu, Rongjun Zhang, Bo Peng, Yongyuan Zhu, Heyuan Zhu, and Costas M. Soukoulis, "First-principles study on the electronic, optical, and transport properties of monolayer α and β-GeSe", Phys. Rev. B 96, 245421 (2017). See also: arXiv:1704.03336.

· Fanqi Wu, Liang Chen, Anyi Zhang, Yi-Lun Hong, Nai-Yun Shih, Seong-Yong Cho, Gryphon A. Drake, Tyler Fleetham, Sen Cong, Xuan Cao, Qingzhou Liu, Yihang Liu , Chi Xu, Yuqiang Ma, Moonsub Shim, Mark E. Thompson, Wencai Ren, Hui-Ming Cheng, and Chongwu Zhou, "High-Performance Sub-Micrometer Channel WSe2 Field-Effect Transistors Prepared Using a Flood-Dike Printing Method", ACS Nano 11, 12536-12546 (2017).

· Yijin Zhang, Ryuji Suzuki, and Yoshihiro Iwasa, "Potential Profile of Stabilized Field-Induced Lateral p-n Junction in Transition-Metal Dichalcogenides", ACS Nano 11, 12583-12590 (2017).

· Vladan Mlinar, "Influence of band offset, nanostructuring, and applied electric field on the optoelectronic properties of vertically stacked MoS2/WS2 materials", Phys. Rev. B 96, 235437 (2017).

· Wenshen Song and Li Yang, "Quasiparticle band gaps and optical spectra of strained monolayer transition-metal dichalcogenides", Phys. Rev. B 96, 235441 (2017).

· Lei Tong, Tiande Liu, Renli Liang, Shuai Wang, Jingwen Chen, Jiangnan Dai, and Lei Ye, "Growth of Transition Metal Dichalcogenides and Directly Modulating Their Properties by Chemical Vapor Deposition", Gen. Chem. 3, 182-193 (2017).

2018 {143}

· Yaping Miao, Yan Li, Qinglong Fang, Yuhong Huang, Yunjin Sun, Kewei Xu, Fei Ma, and Paul K. Chu, "Effects of Dopant Separation on Electronic States and Magnetism in Monolayer MoS2", Appl. Suf. Sci. 428, 226-232 (2018).

· Shivam Kansara, Sanjeev K. Gupta, and Yogesh Sonvane, "Effect of strain engineering on 2D dichalcogenides transition metal: A DFT study", Comput. Mater. Sci. 141, 235-242 (2018).

· Anuj K. Sharma and Baljinder Kaur, "Simulation and analysis of 2D material (MoS2/MoSe2) based plasmonic sensor for measurement of organic compounds in infrared", Optik 157, 161-169 (2018).

· Yipeng Zhao, Wangbing Yu, and Gang Ouyang, "Size-tunable band alignment and optoelectronic properties of transition metal dichalcogenides van der Waals heterostructures", J. Phys. D: Appl. Phys. 51, 015111 (2018).

· Congxin Xia, Wenqi Xiong, Juan Du, Tianxing Wang, Zhongming Wei, and Jingbo Li, "Robust electronic and mechanical properties to layer number in two-dimensional wide-gap X(OH)2 (X= Mg, Ca)", J. Phys. D: Appl. Phys. 51, 015107 (2018).

· Huynh V. Phuc, Nguyen N. Hieu, Bui D. Hoi, Nguyen V. Hieu, Tran V. Thu, Nguyen M. Hung, Victor V. Ilyasov, Nikolai A. Poklonski, and Chuong V. Nguyen, "Tuning the Electronic Properties, Effective Mass and Carrier Mobility of MoS2 Monolayer by Strain Engineering: First-Principle Calculations", J. Electron. Mater. 47, 730-736 (2018).

· Bo Xu, Hui Xiang, Jiang Yin, Yidong Xia, and Zhiguo Liu, "Two dimensional tetragonal yttrium nitride monolayer: A ferroelastic semiconductor with switchable anisotropic properties", Nanoscale 10, 215-221 (2018).

· Ruei-Sung Yu and Yu-Chin Lee, "Effects of annealing on the optical and electrical properties of sputter-deposited CuGaO2 thin films", Thin Solid Films 646, 143-146 (2018).

· Biao Liu, Yu-Qing Zhao, Zhuo-Liang Yu, Lin-Zhi Wang, and Meng-Qiu Cai, "Tuning the Schottky Rectification in Graphene-Hexagonal Boron Nitride-Molybdenum Disulfide Heterostructure", J. Colloid Interface Sci. 513, 677-683 (2018).

· Tingting Xu, Yunyun Liu, Yongyong Pei, Yunpeng Chen, Zimin Jiang, Zhifeng Shi, Junmin Xu, Di Wu, Yongtao Tian, and Xinjian Li, "The ultra-high NO2 response of ultra-thin WS2 nanosheets synthesized by hydrothermal and calcination processes", Sens. Actuators B 259, 789-796 (2018).

· Robert Biele, Eduardo Flores, Jose Ramón Ares, Carlos Sanchez, Isabel J. Ferrer, Gabino Rubio-Bollinger, Andres Castellanos-Gomez, and Roberto D'Agosta, "Strain-induced band gap engineering in layered TiS3", Nano Res. 11, 225-232 (2018).

· Amit Kumar and Qiang Xu, "Two-Dimensional Layered Materials as Catalyst Supports", ChemNanoMat 4, 28-40 (2018).

· Xiang Lei and Ke Yu, "First-principles calculation on strain and electric field induced band modulation and phase transition of bilayer WSe2-MoS2 heterostructure", Physica E 98, 17-22 (2018).

· Chenhai Shen and Guangtao Wang, "Electronic and optical properties of bilayer PbI2: a first-principles study", J. Phys. D: Appl. Phys. 51, 035301 (2018).

· Jing Liu, Yaqiang Ma, Mingyu Zhao, Yi Li, Xianqi Dai, and Yanan Tang, "Strain effects on the magnetism of transition metal-doped MoTe2 monolayer", J. Mater. Sci. 53, 5114-5124 (2018).

· Pushpa Raj Pudasaini, Akinola Oyedele, Cheng Zhang, Michael G. Stanford, Nicholas Cross, Anthony T. Wong, Anna N. Hoffman, Kai Xiao, Gerd Duscher, David G. Mandrus, Thomas Z. Ward, and Philip D. Rack, "High-performance multilayer WSe2 field-effect transistors with carrier type control", Nano Res. 11, 722-730 (2018).

· Junli Wang, Chenxi Dou, Lei Chen, Haiting Yan, Lingjie Meng, Jiangfeng Zhu, and Zhiyi Wei, "High energy passively Q-switched Er-doped fiber laser based on Mo0.5W0.5S2 saturable absorber", Opt. Mater. Express 8, 324-331 (2018).

· Anastasia Shestakova, Sergey Lavrov, Kirill Brekhov, Nikita Ilyin, Andrey Kudryavtsev, Elena D. Mishina, and Leonid L. Kulyuk, "Photoexcitation Carrier Kinetics in WSe2 Nanolayers in the Vicinity of the Band Edge", Phys. Status Solidi B 255, 1700259 (2018).

· L. A. Chernozatonskii and A. A. Artyukh, "Quasi-two-dimensional transition metal dichalcogenides: structure, synthesis, properties and applications", Phys. Usp. 61, 3-30 (2018) (written in Russian).

· L. Meckbach, T. Stroucken, and S. W. Koch, "Influence of the effective layer thickness on the ground-state and excitonic properties of transition-metal dichalcogenide systems", Phys. Rev. B 97, 035425 (2018). See Also: arXiv:1709.09056

· Chaoyu Song, Fengren Fan, Ningning Xuan, Shenyang Huang, Guowei Zhang, Chong Wang, Zhengzong Sun, Hua Wu, and Hugen Yan, "Largely Tunable Band Structures of Few-Layer InSe by Uniaxial Strain", ACS Appl. Mater. Interfaces 10, 3994-4000 (2018). See also: arXiv:1711.01715.

· Vishwas Jindal, Sumi Bhuyan, Thorsten Deilmann, and Sandip Ghosh, "Anomalous behavior of the excited state of the A exciton in bulk WS2", Phys. Rev. B 97, 045211 (2018).

· Guang Yang, Yanmin Yang, Hongran Ma, Xiujuan Mao, Congcong Li, Jie Li, Qiang Zhang, Zhidong Zhang, Fuxing Yin, and Jia Li, "Realization of half-metallic state on bilayer WSe2 by doping transition metals (Cr, Mn, Fe, Co, Ni) in its interlayer", Nanotechnology 29, 115201 (2018).

· Chendong Zhang, Ming-Yang Li, Jerry Tersoff, Yimo Han, Yushan Su, Lain-Jong Li, David A. Muller, and Chih-Kang Shih, "Strain distributions and their influence on electronic structures of WSe2-MoS2 laterally strained heterojunctions", Nature Nanotechnology 13, 152-158 (2018).

· Dong Zhou, Haibo Shu, Chenli Hu, Li Jiang, Pei Liang, and Xiaoshuang Chen, "Unveiling the Growth Mechanism of MoS2 with Chemical Vapor Deposition: From 2D Planar Nucleation to Self-Seeding Nucleation", Cryst. Growth Des. 18, 1012-1019 (2018).

· I. Filikhin, R. Y. Kezerashvili, S. M. Tsiklauri, and B. Vlahovic, "Trions in bulk and monolayer materials: Faddeev equations and hyperspherical harmonics", Nanotechnology 29, 124002 (2018).

· L. Meckbach, T. Stroucken, and S. W. Koch, "Giant excitation induced bandgap renormalization in TMDC monolayers", Appl. Phys. Lett. 112, 061104 (2018).

· Wen-Jin Yin, Bo Wen, Xiao-Lin Wei, Guozheng Nie, and Li-Min Liu, "The tunable dipole and carrier mobility for few layer Janus MoSSe structure", J. Mater. Chem. C 6, 1693-1700 (2018).

· Kuang-I Lin, Yen-Hung Ho, Shu-Bai Liu, Jian-Jhih Ciou, Bo-Ting Huang, Christopher Chen, Han-Ching Chang, Chien-Liang Tu, and Chang-Hsiao Chen, "Atom-Dependent Edge-Enhanced Second-Harmonic Generation on MoS2 Monolayers", Nano Lett. 18, 793-797 (2018).

· Thorsten Deilmann and Kristian S. Thygesen, "Interlayer Trions in the MoS2/WS2 van der Waals Heterostructure", Nano Lett. 18, 1460-1465 (2018).

· Fabio Bussolotti, Jainwei Chai, Ming Yang, Hiroyo Kawai, Zheng Zhang, Shijie Wang, Swee Liang Wong, Carlos Manzano, Yuli Huang, Dongzhi Chi, and Kuan Eng Johnson Goh, "Electronic properties of atomically thin MoS2 layers grown by physical vapour deposition: band structure and energy level alignment at layer/substrate interfaces", RSC Adv. 8, 7744-7752 (2018).

· Chuong V. Nguyen, "Tuning the electronic properties and Schottky barrier height of the vertical graphene/MoS2 heterostructure by an electric gating", Superlattice Microst. 116, 79-87 (2018).

· Min Wang, Yong Pang, Ding Yu Liu, Shao Hui Zheng, and Qun Liang Song, "Tuning magnetism by strain and external electric field in zigzag Janus MoSSe nanoribbons", Comput. Mater. Sci. 146, 240-247 (2018).

· Yulan Dong, Zeng bowen, Jin Xiao, Zhang Xiaojiao, Li Dongde, Li Mingjun, He Jun, and Mengqiu Long, "Effect of sulphur vacancy and interlayer interaction on the electronic structure and spin splitting of bilayer MoS2", J. Phys.: Condens. Matter 30, 125302 (2018).

· Christian Martella, Carlo Mennucci, Alessio Lamperti, Emmanuele Cappelluti, Francesco Buatier de Mongeot, and Alessandro Molle, "Designer Shape Anisotropy on Transition-Metal-Dichalcogenide Nanosheets", Adv. Mater. 30, 1705615 (2018).

· Wen-Jun Liu, Mengliu Liu, Yuyi OuYang, Huanran Hou, Guoli Ma, Ming Lei, and Zhiyi Wei, "Tungsten diselenide for mode-locked erbium-doped fiber lasers with short pulse duration", Nanotechnology 29, 174002 (2018).

· Hema C. P. Movva, Timothy Lovorn, Babak Fallahazad, Stefano Larentis, Kyounghwan Kim, Takashi Taniguchi, Kenji Watanabe, Sanjay K. Banerjee, Allan H. MacDonald, and Emanuel Tutuc, "Tunable Γ−K Valley Populations in Hole-Doped Trilayer WSe2", Phys. Rev. Lett. 120, 107703 (2018). See also: arXiv:1801.03474.

· Xing Li, Mei Sun, Chongxin Shan, Qing Chen, and Xianlong Wei, "Mechanical Properties of 2D Materials Studied by In Situ Microscopy Techniques", Adv. Mater. Interfaces 5, 1701246 (2018).

· Yi Pan, Stefan Folsch, Yifan Nie, Dacen Waters, Yu-Chuan Lin, Bhakti Jariwala, Kehao Zhang, Kyeongjae Cho, Joshua A. Robinson, and Randall M. Feenstra, "Quantum-Confined Electronic States Arising from Moiré Pattern of MoS2-WSe2 Hetero-bilayers", Nano Lett. 18, 1849-1855 (2018). See also: arXiv:1712.00116.

· Xinpeng Fu, Fangfei Li, Jung-Fu Lin, Yuan-Bo Gong, Xiaoli Huang, Yanping Huang, Hanxue Gao, Qiang Zhou, and Tian Cui, "Coupling-Assisted Renormalization of Excitons and Vibrations in Compressed MoSe2-WSe2 Heterostructure", J. Phys. Chem. C 122, 5820-5828 (2018).

· Worasak Rotjanapittayakul, Wanchai Pijitrojana, Thomas Archer, Stefano Sanvito, and Jariyanee Prasongkit, "Spin injection and magnetoresistance in MoS2-based tunnel junctions using Fe3Si Heusler alloy electrodes", Sci. Rep. 8, 4779 (2018).

· Chandan H. Ravikumar, G. Vishnu Nair, S. Muralikrishna, D.H. Nagaraju, and R. Geetha Balakrishna, "Nanoflower like Structures of MoSe2 and MoS2 as Efficient Catalysts for Hydrogen Evolution", Mater. Lett. 220, 133-135 (2018).

· Guangzhao Wang, Hongkuan Yuan, Junli Chang, Biao Wang, Anlong Kuang, and Hong Chen, "ZnO/MoX2 (X = S, Se) composites used for visible light photocatalysis", RSC Adv. 8, 10828-10835 (2018).

· Zhaoyong Guan, Shuang Ni, and Shuanglin Hu, "Tunable Electronic and Optical Properties of Monolayer and Multilayer Janus MoSSe as a Photocatalyst for Solar Water Splitting: A First-Principles Study", J. Phys. Chem. C 122, 6209-6216 (2018).

· Stefano Agnoli, Alberto Ambrosetti, Tevfik Onur Mentes, Alessandro Sala, Andrea Locatelli, Pier Luigi Silvestrelli, Mattia Cattelan, Sarah Eichfeld, Donna D. Deng, Joshua. A. Robinson, José Avila, Chaoyu Chen, and Maria Carmen Asensio, "Unraveling the Structural and Electronic Properties at the WSe2-Graphene Interface for a Rational Design of van der Waals Heterostructures", ACS Appl. Nano Mater. 1, 1131-1140 (2018).

· Y. M. Jaques, P. Manimunda, Y. Nakanishi, S. Susarla, C. F. Woellner, S. Bhowmick, S. A. S. Asif, D. S. Galvão, C. S. Tiwary, and P. M. Ajayan, "Differences in the Mechanical Properties of Monolayer and Multilayer WSe2/MoSe2", MRS Adv. 3, 373-378 (2018). See also: arXiv:1801.05641.

· Fang Liang, Hejun Xu, Xing Wu, Chaolun Wang, Chen Luo, and Jian Zhang, "Raman spectroscopy characterization of two-dimensional materials", Chinese Phys. B 27, 037802 (2018).

· Youngsin Park, Nannan Li, Geunsik Lee, Kwang S. Kim, Ki-Jeong Kim, Soon Cheol Hong, and Sang Wook Han, "Sulfur-vacancy-dependent geometric and electronic structure of bismuth adsorbed on MoS2", Phys. Rev. B 97, 115307 (2018).`

· Youngsin Park, Christopher C. S. Chan, Robert A. Taylor, Yongchul Kim, Nammee Kim, Yongcheol Jo, Seung W. Lee, Woochul Yang, Hyunsik Im, and Geunsik Lee, "Temperature induced crossing in the optical bandgap of mono and bilayer MoS2 on SiO2", Sci. Rep. 8, 5380 (2018).

· Wenshuo Xu, Daichi Kozawa, Yu Liu, Yuewen Sheng, Ke Wei, Volodymyr B. Koman, Shanshan Wang, Xiaochen Wang, Tian Jiang, Michael S. Strano, and Jamie H. Warner, "Determining the Optimized Interlayer Separation Distance in Vertical Stacked 2D WS2:hBN:MoS2 Heterostructures for Exciton Energy Transfer", Small 14, 1703727 (2018).

· Zong-Yan Zhao and Qing-Lu Liu, "Study of the layer-dependent properties of MoS2 nanosheets with different crystal structures by DFT calculations", Catal. Sci. Technol. 8, 1867-1879 (2018).

· Gang Wang, Alexey Chernikov, Mikhail M. Glazov, Tony F. Heinz, Xavier Marie, Thierry Amand, and Bernhard Urbaszek, "Colloquium: Excitons in atomically thin transition metal dichalcogenides", Rev. Mod. Phys. 90, 021001 (2018). See also: arXiv:1707.05863.

· Swarup Deb, Poulab Chakrabarti, Pranab K. Mohapatra, Barun K. Barick, and Subhabrata Dhar, "Tailoring of defect luminescence in CVD grown monolayer MoS2 film", Appl. Surf. Sci. 445, 542-547 (2018).

· Ozgur Burak Aslan, Isha Datye, Michal J Mleczko, Karen Sze Cheung, Sergiy Krylyuk, Alina Bruma, Irina Kalish, Albert Davydov, Eric Pop, and Tony F Heinz, "Probing the Optical Properties and Strain-Tuning of Ultrathin Mo1-xWxTe2", Nano Lett. 18, 2485-2491 (2018).

· Luojun Du, Tingting Zhang, Mengzhou Liao, Guibin Liu, Shuopei Wang, Rui He, Zhipeng Ye, Hua Yu, Rong Yang, Dongxia Shi, Yugui Yao, and Guangyu Zhang, "Temperature-driven evolution of critical points, interlayer coupling, and layer polarization in bilayer MoS2", Phys. Rev. B 97, 165410 (2018).

· Feng Liu, Tzu-Chiang Wang, and Qiheng Tang, "In-Plane Heterostructures Enable Internal Stress Assisted Strain Engineering in 2D Materials", Small 14, 1703512 (2018).

· Narges Ansari and Farinaz Ghorbani, "Light absorption optimization in two-dimensional transition metal dichalcogenides van der Waals heterostructures", J. Opt. Soc. Am. B 35, 1179-1185 (2018).

· Qinglong Fang, Xumei Zhao, Yu Hong Huang, Kewei Xu, Tai Min, Paul K. Chu, and Fei Ma, "Interfacial Electronic States and Self-Formed p-n Junctions in Hydrogenated MoS2/SiC Heterostructure", J. Mater. Chem. C 6, 4523-4530 (2018).

· Mei Ge and Chen Si, "Mechanical and Electronic Properties of Lateral Graphene and Hexagonal Boron Nitride Heterostructures", Carbon 136, 286-291 (2018).

· Carsten Habenicht, Roman Schuster, Martin Knupfer, and Bernd Büchner, "Investigation of indirect excitons in bulk 2H-MoS2 using transmission electron energy-loss spectroscopy", J. Phys.: Condens. Matter 30, 205502 (2018). See also: arXiv:1805.01826.

· S. Saberi-Pouya, T. Vazifehshenas, M. Saleh, M. Farmanbar, and T. Salavati-fard, "Plasmon modes in monolayer and double-layer black phosphorus under applied uniaxial strain", J. Appl. Phys. 123, 174301 (2018). See also: arXiv:1710.07808.

· Jun Young Kim, Sun Gyu Kim, Jong Won Youn, Yongjun Lee, Jeongyong Kim, and Jinsoo Joo, "Energy and charge transfer effects in two-dimensional van der Waals hybrid nanostructures on periodic gold nanopost array", Appl. Phys. Lett. 112, 193101 (2018).

· Yuan-Bo Gong, Qiang Zhou, Yan Liu, Xinpeng Fu, Mingguang Yao, Xiaoli Huang, Yanping Huang, Hanxue Gao, Fangfei Li, and Tian Cui, "Increasing Interlayer Coupling Prevented the Deformation in Compressed Multilayer WSe2", J. Phys. Chem. C 122, 10261-10266 (2018).

· R. Longuinhos and J. Ribeiro-Soares, "Stable holey two-dimensional C2N structures with tunable electronic structure", Phys. Rev. B 97, 195119 (2018).

· Yuanhui Sun, Xinjiang Wang, Xingang Zhao, Zhiming Shi, and Lijun Zhang, "First-principle high-throughput calculations of carrier effective masses of two-dimensional transition metal dichalcogenides", J. Semicond. 39, 072001 (2018).

· Christian Winkler, Shashank S. Harivyasi, and Egbert Zojer, "Controlling the electronic properties of van der Waals heterostructures by applying electrostatic design", 2D Mater. 5, 035019 (2018).

· Yusuke Hibino, Seiya Ishihara, Naomi Sawamoto, Takumi Ohashi, Kentarou Matsuura, Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh, Hitoshi Wakabayashi, and Atsushi Ogura, "Investigation on Mo1-xWxS2 fabricated by co-sputtering and post-deposition sulfurization with (t-C4H9)2S2", Jpn. J. Appl. Phys. 57, 06HB04 (2018).

· Stefano Larentis, Hema C. P. Movva, Babak Fallahazad, Kyounghwan Kim, Armand Behroozi, Takashi Taniguchi, Kenji Watanabe, Sanjay K. Banerjee, and Emanuel Tutuc, "Large effective mass and interaction-enhanced Zeeman splitting of K-valley electrons in MoSe2", Phys. Rev. B 97, 201407(R) (2018). See also: arXiv:1804.10104.

· Changyong Lan, Ziyao Zhou, Zhifei Zhou, Chun Li, Lei Shu, Lifan Shen, Dapan Li, Ruoting Dong, SenPo Yip, and Johnny C. Ho, "Wafer-scale synthesis of monolayer WS2for high-performance flexible photodetectors by enhanced chemical vapor deposition", Nano Res. 11, 3371-3384 (2018).

· Congxin Xia, Wenqi Xiong, Tianxing Wang, Yuting Peng, Zhongming Wei, Jingbo Li, and Yu Jia, "Type-I Transition Metal Dichalcogenides Lateral Homojunctions: Layer Thickness and External Electric Field Effects", Small 14, 1800365 (2018).

· Guichao Wang, Liang Li, Weihao Fan, Renyan Wang, Shasha Zhou, Jing-Tao Lu, Lin Gan, and Tianyou Zhai, "Interlayer Coupling Induced Infrared Response in WS22/MoS22 Heterostructures Enhanced by Surface Plasmon Resonance", Adv. Funct. Mater. 28, 1800339 (2018).

· Mohamed Moustafa and Tariq Tariq AlZoubi, "Effect of the n-MoTe2 interfacial layer in cadmium telluride solar cells using SCAPS", Optik 170, 101-105 (2018).

· Sebastian Zuluaga, Junhao Lin, Kazutomo Suenaga, and Sokrates T. Pantelides, "Two-dimensional PdSe2-Pd2Se3 junction can serve as nanowires", 2D Mater. 5, 035025 (2018).

· Iqtidar Ahmad, Shujaat Ali Khan, Muhammad Idrees, Muhammad Haneef, Ismail Shahid, Haleem Ud Din, Saleem Ayaz Khan, and Bin Amin, "Influence of strain on specific features of MoX2 (X = S, Se, Te) monolayers", Physica B 545, 113-118 (2018).

· Meng Wu, Jun-jie Shi, Min Zhang, Yimin Ding, Hui Wang, Yu-lang Cen, and Jing Lu, "Enhancement of photoluminescence and hole mobility in 1- to 5-layer InSe due to the top valence-band inversion: strain effect", Nanoscale 10, 11441-11451 (2018).

· Jin Wang, Raju Namburu, Madan Dubey, and Avinash M. Dongare, "Origins of Moiré Patterns in CVD-grown MoS2 Bilayer Structures at the Atomic Scales", Sci. Rep. 8, 9439 (2018).

· Kyunghee Choi, Kimoon Lee, Sanghyuck Yu, Sehoon Oh, Hyoung Joon Choi, Heesun Bae, and Seongil Im, "Interband Transitions in Monolayer and Few-Layer WSe2 Probed Using Photoexcited Charge Collection Spectroscopy", ACS Appl. Mater. Interfaces 10, 20213-20218 (2018).

· Igor Neri and Miquel López-Suárez, "Electronic transport modulation on suspended few-layer MoS2 under strain", Phys. Rev. B 97, 241408(R) (2018). See also: arXiv:1609.09715.

· Nicholas A. Pike, Antoine Dewandre, Benoit Van Troeye, Xavier Gonze, and Matthieu J. Verstraete, "Vibrational and dielectric properties of the bulk transition metal dichalcogenides", Phys. Rev. Materials 2, 063608 (2018). See also: arXiv:1804.02196.

· Changli Li, Qi Cao, Faze Wang, Yequan Xiao, Yanbo Li, Jean-Jacques Delaunay, and Hongwei Zhu, "Engineering graphene and TMDs based van der Waals heterostructures for photovoltaic and photoelectrochemical solar energy conversion", Chem. Soc. Rev. 47, 4981-5037 (2018).

· Shengqian Ma, Feng Li, Jiguo Geng, Mei Zhu, Suyan Li, Juguang Han, "Tuning the Energy Gap of SiCH3 Nanomaterials Under Elastic Strain", J. Electron. Mater. 47, 4615-4620 (2018).

· Jessica Lindlau, Malte Selig, Andre Neumann, Léo Colombier, Jonghwan Kim, Gunnar Berghäuser, Feng Wang, Ermin Malic, and Alexander Höele, "The role of momentum-dark excitons in the elementary optical response of bilayer WSe2", Nat. Commun. 9, 2586 (2018). See also: arXiv:1710.00989.

· Eunpa Kim, Yoonkyung Lee, Changhyun Ko, Yunjeong Park, Junyeob Yeo, Yabin Chen, Hwan Sung Choe, Frances I. Allen, Junsuk Rho, Sefaattin Tongay, Junqiao Wu, Kyunghoon Kim, and Costas P. Grigoropoulos, "Tuning the optical and electrical properties of MoS2 by selective Ag photo-reduction", Appl. Phys. Lett. 113, 013105 (2018).

· Junyang He, Nan Fang, Keigo Nakamura, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio, "2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p+-WSe2 Source", Adv. Elect. Mater. 4, 1800207 (2018).

· Guowen Liang, Longhui Zeng, Yuen Hong Tsang, Lili Tao, Chun Yin Tang, Ping Kwong Cheng, Hui Long, Xin Liu, Ji Li, Junle Qua, and Qiao Wen, "Technique and model for modifying the saturable absorption (SA) properties of 2D nanofilms by considering interband exciton recombination", J. Mater. Chem. C 6, 7501-7511 (2018).

· Nam Khen Oh, Hoon Ju Lee, Keunsu Choi, Jihyung Seo, Ungsoo Kim, Junghyun Lee, Yunseong Choi, Seungon Jung, Jun Hee Lee, Hyeon Suk Shin, and Hyesung Park, "Nafion-Mediated Liquid-Phase Exfoliation of Transition Metal Dichalcogenides and Direct Application in Hydrogen Evolution Reaction", Chem. Mater. 30, 4658-4666 (2018).

· Khang D. Pham, Nguyen N. Hieu, Huynh V. Phuc, Bui D. Hoi, Victor V. Ilysov, Bin Amin, Chuong V. Nguyen, "First principles study of the electronic properties and Schottky barrier in vertically stacked graphene on the Janus MoSeS under electric field", Comput. Mater. Sci. 153, 438-444 (2018).

· Leonard W. T. Ng, Guohua Hu, Richard C. T. Howe, Xiaoxi Zhu, Zongyin Yang, Christopher G. Jones, and Tawfique Hasan, "Structures, Properties and Applications of 2D Materials (Book Chapter)", Printing of Graphene and Related 2D Materials (Editors: Leonard W. T. Ng et al.), Chapter 2, pp. 19-51 (2018) (Springer, Cham).

· Mohammed H. Mohammed, Ahmed S. Al-Asadi, and Falah H. Hanoon, "Semi-metallic bilayer MS2 (M = W, Mo) induced by Boron, Carbon, and Nitrogen impurities", Solid State Commun. 282, 28-32 (2018).

· Pratik Pataniya, G. K. Solanki, Chetan K. Zankat, Mohit Tannarana, C. K. Sumesh, K. D. Patel, and V. M. Pathak, "Fabrication and photoresponse of n-WS2/p-V0.25W0.75Se2 van der Waals heterojunction", Pramana-J. Phys. 91, 41 (2018).

· Michael D. Valentin, Alison Guan, Ariana E. Nguyen, I-Hsi Lu, Cindy S. Merida, Michael J. Gomez, Madan Dubey, and Ludwig Bartels, "Synthesis and Characterization of Novel TMD: Rhenium Disulfide", 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference Proceedings of Technical Papers, 21-23 (2018).

· S. Shahab Naghavi, Jiangang He, Yi Xia, and C. Wolvertonz, "Pd2Se3 Monolayer: A Promising Two Dimensional Thermoelectric Materials with Ultralow Lattice Thermal Conductivity and High Power Factor", Chem. Mater. 30, 5639-5647 (2018). See also: arXiv:1804.06756.

· Peter C. Sherrell, Kanudha Sharda, Chiara Grotta, Jacopo Ranalli, Maria S. Sokolikova, Federico M. Pesci, Pawel Palczynski, Victoria L. Bemmer, and Cecilia Mattevi, "Thickness-Dependent Characterization of Chemically Exfoliated TiS2 Nanosheets", ACS Omega 3, 8655-8662 (2018).

· Yosslen Aray and Antonio Diaz Barrrios, "Exploring the electron density localization in MoS2 nanoparticles by means of a localize-electrons detector: Unraveling the origin of the one-dimensional metallic sites on MoS2 catalysts", Phys. Chem. Chem. Phys. 20, 20417-20426 (2018).

· Urmila P. Rathod, Justin Egede, Andrey A. Voevodin, and Nigel D. Shepherd, "Extrinsic p-type doping of few layered WS2 films with niobium by pulsed laser deposition", Appl. Phys. Lett. 113, 062106 (2018).

· Amritesh Rai, Hema C. P. Movva, Anupam Roy, Deepyanti Taneja, Sayema Chowdhury, and Sanjay K. Banerjee, "Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor", Crystals 8, 316 (2018).

· Zhiming Shi, Xinjiang Wang, Yuanhui Sun, Yawen Li, and Lijin Zhang, "Interlayer Coupling in Two-Dimensional Semiconductor Materials", Semicond. Sci. Technol. 33, 093001 (2018).

· Mohamed Moustafa and Tariq Alzoubi, "Numerical study of CdTe solar cells with p-MoTe2 TMDC as an interfacial layer using SCAPS", Modern Phys. Lett. B 32, 1850269 (2018).

· Congxin Xia, Wenqi Xiong, Wenbo Xiao, Juan Du, Lizhen Fang, Jingbo Li, and Yu Jia, "Enhanced Carrier Concentration and Electronic Transport by Inserting Graphene into van der Waals Heterostructures of Transition-Metal Dichalcogenides", Phys. Rev. Applied 10, 024028 (2018).

· Ashish Arora, Thorsten Deilmann, Philipp Marauhn, Matthias Drüppel, Robert Schneider, Maciej R. Molas, Diana Vaclavkova, Steffen Michaelis de Vasconcellos, Michael Rohlfing, Marek Potemski, and Rudolf bratschitsch, "Valley-contrasting optics of interlayer excitons in Mo- and W-based bulk transition metal dichalcogenides", Nanoscale 10, 15571-15577 (2018).

· Mosayeb Naseri, Ali H. Reshak, Arash Boochani, D. P. Rai, Laleh Farhang Matin, and Shahram Solaymani, "Effect of Si and Ge Surface Doping on the Be2C Monolayer: Case Study on Electrical and Optical Properties", Silicon 10, 1893-1902 (2018).

· Lars Meckbach, Ulrich Huttner, Lars Christian Bannow, Tineke Stroucken, and Stephan W. Koch, "Interlayer excitons in transition-metal dichalcogenide heterostructures with type-II band alignment", J. Phys.: Condens. Matter 30, 374002 (2018).

· Sock Mui Poh, Xiaoxu Zhao, Sherman Jun Rong Tan, Deyi Fu, Wenwen Fei, Leiqiang Chu, Dan Jiadong, Wu Zhou, Stephen J. Pennycook, Antonio H. Castro Neto, and Kian Ping Loh, "Molecular Beam Epitaxy of Highly Crystalline MoSe2 on Hexagonal Boron Nitride", ACS Nano 12, 7562-7570 (2018).

· Zhi Gen Yu, Boris I. Yakobson, and Yong-Wei Zhang, "Realizing Indirect-to-Direct Band Gap Transition in Few-Layer Two-Dimensional MX2 (M= Mo, W; X= S, Se)", ACS Appl. Energy Mater. 1, 4115-4121 (2018).

· Sung-Jin An, Yong Hwan Kim, Chanwoo Lee, Dae Young Park, and Mun Seok Jeong, "Exfoliation of Transition Metal Dichalcogenides by a High-Power Femtosecond Laser", Sci. Rep. 8, 12957 (2018).

· Ping Wu, Naiqiang Yin, Wenjing Cheng, and Peng Li, "STRUCTURAL AND ELECTRONIC PROPERTIES OF Pd AND Au MONOLAYERS ADSORBED ON MoS2: A COMPARATIVE STUDY FROM DFT CALCULATIONS", Surf. Rev. Lett. 25, 1850117 (2018).

· Xiaoming Zheng, Yuehua Wei, Chuyun Deng, Han Huang, Yayun Yu, Guang Wang, Gang Peng, Zhihong Zhu, Yi Zhang, Tian Jiang, Shiqiao Qin, Renyan Zhang, and Xueao Zhang, "Controlled Layer-by-Layer Oxidation of MoTe2 via O3 Exposure", ACS Appl. Mater. Interfaces 10, 30045-30050 (2018).

· Chen Long, Zhirui Gong, Hao Jin, and Ying Dai, "Observation of intrinsic dark exciton in Janus-MoSSe heterosturcture induced by intrinsic electric field", J. Phys.: Condens. Matter 30, 395001 (2018).

· Yunhua Wang, Zongtan Wang, Jie Li, Jie Tan, Biao Wang, and Yulan Liu, "Tight-binding piezoelectric theory and electromechanical coupling correlations for transition metal dichalcogenide monolayers", Phys. Rev. B 98, 125402 (2018). See also: arXiv:1801.00995.

· Yue Niu, Sergio Gonzalez-Abad, Riccardo Frisenda, Philipp Marauhn, Matthias Drüppel, Patricia Gant, Robert Schmidt, Najme S. Taghavi, David Barcons, Aday J. Molina-Mendoza, Steffen Michaelis De Vasconcellos, Rudolf Bratschitsch, David Perez De Lara, Michael Rohlfing, and Andres Castellanos-Gomez, "Thickness-Dependent Differential Reflectance Spectra of Monolayer and Few-Layer MoS2, MoSe2, WS2 and WSe2", Nanomaterials 8, 725 (2018). See also: Preprints, 2018080242.

· Khang D. Pham, Nguyen N. Hieu, Victor V. Ilyasov, Huynh V. Phuc, Bui D. Hoi, E. Feddi, Nguyen V. Thuan, and Chuong V. Nguyen, "First principles study on the electronic properties and Schottky barrier of Graphene/InSe heterostructure", Superlattice Microst. 122, 570-576 (2018).

· Zhihui Chen, Katherine Price, and Aaron D. Franklin, "Contacting and Gating 2D Nanomaterials", IEEE Trans. Electron Devices 65, 4073-4083 (2018).

· Hao Wang, Wei Wei, Fengping Li, Baibiao Huang, and Ying Dai, "Step-like band alignment and stacking-dependent band splitting in trilayer TMDs heterostructures", Phys. Chem. Chem. Phys. 20, 25000-25008 (2018).

· M. C. Massey, I. Manuel, P. S. Edwards, D. Parker, T. M. Pekarek, and J. T. Haraldsen, "Magnetic impurity bands in Gax-1MnxS: Towards understanding the anomalous spin-glass transition", Phys. Rev. B 98, 155206 (2018).

· Matthias Drüppel, Thorsten Deilmann, Jonathan Noky, Philipp Marauhn, Peter Krüger, and Michael Rohlfing, "Electronic excitations in transition metal dichalcogenide monolayers from an LDA+GdW approach", Phys. Rev. B 98, 155433 (2018).

· Xiwen Zhang, Bing Wang, Xianghong Niu, Yunhai Li, Yunfei Chen, and Jinlan Wang, "Bi2OS2: A direct-gap two-dimensional semiconductor with high carrier mobility and surface electron states", Mater. Horiz. 5, 1058-1064 (2018).

· Ya Yu Lee, Zhenliang Hu, Xinyun Wang, and Chorng Haur Sow, "Progressive Micro-Modulation of Interlayer Coupling in Stacked WS2/WSe2 Heterobilayers Tailored by a Focused Laser Beam", ACS Appl. Mater. Interfaces 10, 37396-37406 (2018).

· Congxin Xia, Wenqi Xiong, Juan Du, Tianxing Wang, Yuting Peng, and Jingbo Li, "Universality of electronic characteristics and photocatalyst applications in the two-dimensional Janus transition metal dichalcogenides", Phys. Rev. B 98, 165424 (2018).

· Chengwei Liao, Yipeng Zhao, and Gang Ouyang, "Strain-Modulated Band Engineering in Two-Dimensional Black Phosphorus/MoS2 van der Waals Heterojunction", ACS Omega 3, 14641-14649 (2018).

· Fei Chen, Su Ding, and Weitao Su, "A feasible approach to fabricate two-dimensional WS2 flakes: from monolayer to multilayer", Ceram. Int. 44, 22108-22112 (2018).

· Mei Qiao, Tie-Jun Wang, Jing Zhang, Yong Liu, Peng Liu, and Xue-Lin Wang, "The effect of carbon-ion irradiation on surface microstructure and photoluminescence properties in monolayer tungsten diselenide", Nucl. Instrum. Methods Phys. Res. B. 435, 278-284 (2018).

· Thomas La Martina, Jian-Xin Zhu, Alexander V. Balatsky, and Jason T. Haraldsen, "Dirac Nodes and Magnetic Order in M2X2 Transition-Metal Chalcogenides", Phys. Status Solidi RRL 12, 1800181 (2018).

· Carmen Palacios-Berraquero, "Introduction: 2d-Based Quantum Technologies (Book Chapter)", Quantum Confined Excitons in 2-Dimensional Materials (Springer Theses) (Supervisors: M. Atatüre, A. Ferrai, and J. Robinson), Chapter 1, pp. 1-30 (2018) (Springer).

· Jia-Yu Shi and You-Zhao Lan, "First-principles study of stacking effect on second harmonic generation of graphene-like two-dimensional silicon carbide", Acta Phys. Sin. 67, 217803 (2018) (written in Chinese).

· Ruiping Li, Yingchun Cheng, and Wei Huang, "Recent Progress of Janus 2D Transition Metal Chalcogenides: From Theory to Experiments", Small 14, 1802091 (2018).

· Hui Zhang and Mingyang Chen, "Two-dimensional β-phase group-VA binary compounds for versatile electronic and optical properties", J. Mater. Chem. C 6, 11694-11700 (2018).

· A. Valishina, R. Burganova, A. Petrova, O. Nedopekin, and D. Tayurskii, "Ab initio study of electronic properties of graphene/MoS2 heterostructure under biaxial deformations", AIP Conf. Proc. 2041, 020005 (2018).

· Chenji Zou, Chunxiao Cong, Jingzhi Shang, Chuan Zhao, Mustafa Eginligil, Lishu Wu, Yu Chen, Hongbo Zhang, Shun Feng, Jing Zhang, Hao Zeng, Wei Huang, and Ting Yu, "Probing magnetic-proximity-effect enlarged valley splitting in monolayer WSe2 by photoluminescence", Nano Res. 11, 6252-6259 (2018).

· Gayatree Barik and Sourav Pal, "Monolayer Transition Metal Dichalcogenide Mo1-xWxS2 Alloys as Efficient Anode Materials for Lithium Ion Batteries", J. Phys. Chem. C 122, 25837-25848 (2018).

· Yan Aung Moe, Yinghui Sun, Huanyu Ye, Kai Liu, and Rongming Wang, "Probing Evolution of Local Strain at MoS2-metal Boundaries by Surface-enhanced Raman scattering", ACS Appl. Mater. Interfaces 10, 40246-40254 (2018).

· Jemee Joe, Changdeuck Bae, Eunsoo Kim, Thi Anh Ho, Heejun Yang, Jong Hyeok Park, and Hyunjung Shin, "Mixed-Phase (2H and 1T) MoS2 Catalyst for a Highly Efficient and Stable Si Photocathode", Catalysts 8, 580 (2018). See also: Preprints, 2018100765.

· Leyla Najafi, Babak Taheri, Beatriz Martín-García, Sebastiano Bellani, Diego Di Girolamo, Antonio Agresti, Reinier Oropesa-Nuñez, Sara Pescetelli, Luigi Vesce, Emanuele Calabrò, Mirko Prato, Antonio E. Del Rio Castillo, Aldo Di Carlo, and Francesco Bonaccorso, "MoS2 Quantum Dot/Graphene Hybrids for Advanced Interface Engineering of a CH3NH3PbI3 Perovskite Solar Cell with an Efficiency of over 20%", ACS Nano 12, 10736-10754 (2018).

· Luciano Ortenzi, Luciano Pietronero, and Emmanuele Cappelluti, "Zero-point motion and direct-indirect band-gap crossover in layered transition-metal dichalcogenides", Phys. Rev. B 98, 195313 (2018). See also: arXiv:1901.08301.

· Feifei Li, Changmin Shi, Dongchao Wang, Guangliang Cui, Pinhua Zhang, Li Lv, and Li Chen, "Improved visible-light absorbance of monolayer MoS2 on AlN substrate and angle-dependent electronic structures", Phys. Chem. Chem. Phys. 20, 29131-29141 (2018).

· Huabing Shu, "Electronic, transport, and optical properties of atomically thin silicon phosphide: First-principles calculations", Mater. Res. Express 6, 026428 (2018).

· Jing Zhao, Yuanfeng Xu, Fajun Ma, Anita Ho-Baillie, Hao Zhang, and Stephen Bremner, "Simulation of Solar Cells Employing 2 Dimensional Transition Metal Dichalcogenide - Silicon Front Surfaces", 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC), 2092-2096 (2018).

· Neha Sakhuja, Ravindra Jha, and Navakanta Bhat, "Ppb-Level Ammonia Detection by Exfoliated WS2 Based Chemiresistive Sensors for Breath Analysis", 2018 IEEE SENSORS, 1-4 (2018).

· Durgesh Kumar Sharma, Sudhir Kumar, and Sushil Auluck, "Electronic structure, defect properties, and hydrogen storage capacity of 2H-WS2: A first-principles study", Int. J. Hydrogen Energy 43, 23126-23134 (2018).

· Anastasios Stergiou and Nikos Tagmatarchis, "Molecular Functionalization of 2D MoS2 Nanosheets", Chem. Eur. J. 24, 18246-18257 (2018).

· G. Dezi, N. Scopigno, S. Caprara, and M. Grilli, "Negative electronic compressibility and nanoscale inhomogeneity in ionic-liquid gated two-dimensional superconductors", Phys. Rev. B 98, 214507 (2018). See also: arXiv:1706.01274.

· Won Seok Yun and J. D. Lee, "Exploring a Novel Atomic Layer with Extremely Low Lattice Thermal Conductivity: ZnPSe3 and Its Thermoelectrics", J. Phys. Chem. C 122, 27917-27924 (2018).

· Nengjie Huo and Gerasimos Konstantatos, "Recent Progress and Future Prospects of 2D-Based Photodetectors", Adv. Mater. 30, 1801164 (2018).

2019 {119}

· Yu Feng Luo, Yong Pang, Mei Tang, Qunliang Song, and Min Wang, "Electronic properties of Janus MoSSe nanotubes", Comput. Mater. Sci. 156, 315-320 (2019).

· Rana M. Arif Khalil, Fayyaz Hussain, Anwar Manzoor Rana, Muhammad Imran, and G. Murtaza, "Comparative study of polytype 2H-MoS2 and 3R-MoS2 systems by employing DFT", Physica E 106, 338-345 (2019).

· Ze-Cheng Zhao, Chuan-Lu, Qing-Tian Meng, Mei-Shan Wang, and Xiao-Guang Ma, "Photocatalytic hydrogen production from water splitting with N-doped β-Ga2O3 and visible light", Spectroc. Acta Pt. A-Molec. Biomolec. Spectr. 211, 71-78 (2019).

· Huating Liu, Zongyu Huang, Chaoyu He, Yanbing Wu, Lin Xue, Chao Tang, Xiang Qi, and Jianxin Zhong, "Strain engineering the structures and electronic properties of Janus monolayer transition-metal dichalcogenides", J. Appl. Phys. 125, 082516 (2019).

· Sohail Ahmad, Ransell DSouza, and Sugata Mukherjee, "Band gap modulation of ZrX2 (X = S, Se, Te) mono-layers under biaxial strain and transverse electric field and its lattice dynamic properties: A first principles study", Mater. Res. Express 6, 036308 (2019).

· Do Muoi, Nguyen N. Hieu, Huong T. T. Phung, Huynh V. Phuc, B. Amin, Bui D. Hoi, Nguyen V. Hieu, Le C. Nhan, Chuong V. Nguyen, and P. T. T. Le, "Electronic properties of WS2 and WSe2 monolayers with biaxial strain: A first-principles study", Chem. Phys. 519, 69-73 (2019).

· Peng Zhang, Zegao Wang, Lei Liu, Lasse Hyldgaard Klausen, Yin Wang, Jianli Mi, and Mingdong Don, "Modulation the electronic property of 2D monolayer MoS2 by amino acid", Appl. Mater. Today 14, 151-158 (2019).

· Feng Wang, Bin Tu, Peng He, Zhenxing Wang, Lei Yin, Ruiqing Cheng, Junjun Wang, Qiaojun Fang, and Jun He, "Uncovering the Conduction Behavior of van der Waals Ambipolar Semiconductors", Adv. Mater. 31, 1805317 (2019).

· David K. Sang, Huide Wang, Meng Qiu, Rui Cao, Zhinan Guo, Jinlai Zhao, Yu Li, Quanlan Xiao, Dianyuan Fan, and Han Zhang, "Two Dimensional β-InSe with Layer-Dependent Properties: Band Alignment, Work Function and Optical Properties", Nanomaterials 9, 82 (2019).

· Churong Ma, Jiahao Yan, Yingcong Huang, and Guowei Yang, "Photoluminescence manipulation of WS2 flakes by an individual Si nanoparticle", Mater. Horiz. 6, 97-106 (2019).

· Yawei Lv, Wenjing Qin, Chunlan Wang, Lei Liao, and Xingqiang Liu, "Recent Advances in Low-Dimensional Heterojunction-Based Tunnel Field Effect Transistors", Adv. Elect. Mater. 5, 1800569 (2019).

· Jian Yuan, Chao Wang, Yanyu Liu, Ping Wu, and Wei Zhou, "Tunable Photocatalytic HER Activity of Single-Layered TiO2 Nanosheets with Transition-Metal Doping and Biaxial Strain", J. Phys. Chem. C 123, 526-533 (2019).

· Xu Zhao, Qingqing Yang, Hui Zhang, Yonghui Gao, Haiyang Wang, Tianxing Wang, and Shuyi Wei, "Modulating electronic and magnetic properties of zigzag MoSe2 nanoribbons with different edge structures", Physica E 109, 93-100 (2019).

· Tianchao Niu, Jlalin Zhang, and Wei Chen, "Surface Engineering of Two-dimensional Materials", ChemNanoMat 5, 6-23 (2019).

· Jung-Min Hyun and Miyoung Kim, "Electronic and Magnetic Properties of Transition-Metal-Doped WS2 Monolayer; First-Principles Investigations", IEEE Trans. Magn. 55, 7000204 (2019).

· Shakil Mahmud Boby and Rafiqul Islam, "MoS2 Based TFET: Study on Channel Thickness Dependent Performance", 2018 4th International Conference on Electrical Engineering and Information & Communication Technology (iCEEiCT), 449-453 (2019).

· Tianfeng Zhao, Haibo Shu, Zihong Shen, Huimin Hu, Jun Wang, and Xiaoshuang Chen, "Electrochemical Lithiation Mechanism of Two-Dimensional Transition-Metal Dichalcogenide Anode Materials: Intercalation versus Conversion Reactions", J. Phys. Chem. C 123, 2139-2146 (2019).

· Baihai Li, Haoran Guo, Yunrui Wang, Wenxu Zhang, Qiuju Zhang, Liang Chen, Xiaoli Fan, Wanli Zhang, Yanrong Li, and Woon-Ming Lau, "Asymmetric MXene/monolayer transition metal dichalcogenide heterostructures for functional applications", npj Comput. Mater. 5, 16 (2019).

· Gyu-Hyeon Park, Kornelius Nielsch, and Andy Thomas, "2D Transition Metal Dichalcogenide Thin Films Obtained by Chemical Gas Phase Deposition Techniques", Adv. Mater. Interfaces 6, 1800688 (2019).

· Dongil Chu and Eun Kyu Kim, "Hole Conduction of Tungsten Diselenide Crystalline Transistors by Niobium Dopant", Adv. Elect. Mater. 5, 1800695 (2019).

· Seung Jun Yang, Yangjin Lee, Jin Hong Kim, Hyuk Jin Kim, Byoung Ki Choi, Hu Young Jeong, Kwan Pyo Kim, Jin Sik Choi, and Young Jun Chang, "Single-step synthesis of wrinkled MoSe2 thin films", Curr. Appl. Phys. 19, 273-278 (2019).

· Xiaoying Hu, Qi Zhang, and Shansheng Yu, "Theoretical insight into the hydrogen adsorption on MoS2 (MoSe2) monolayer as a function of biaxial strain/external electric field", Appl. Surf. Sci. 478, 857-865 (2019).

· Chenxi Dou, Wen Wen, Junli Wang, Mengyuan Ma, Liming Xie, Ching-Hwa Ho, and Zhiyi Wei, "Ternary ReS2(1-x)Se2x alloy saturable absorber for passively Q-switched and Mode-locked Erbium-doped all-fiber lasers", Photonics Res. 7, 283-288 (2019).

· Guang-Yi Zhao, Hua Deng, Nathaniel Tyree, Michael Guy, Abdellah Lisfi, Qing Peng, Jia-An Yan, Chundong Wang, and Yucheng Lan, "Recent Progress on Irradiation-Induced Defect Engineering of Two-Dimensional 2H-MoS2 Few Layers", Appl. Sci. 9, 678 (2019).

· Qinghai Tan, Shu-Liang Ren, Tao Shen, Xue-Lu Liu, Wei Shi, Yu-Jia Sun, Hui-Xiong Deng, Ping-Heng Tan, and Jun Zhang, "Unraveling the Defect Emission and Exciton-Lattice Interaction in Bilayer WS2", J. Phys. Chem. C 123, 4433-4440 (2019).

· Yang Lu, Shengcai Zhu, Eugene Huang, Yu He, Jiaji Ruan, Gang Liu, and Hao Yan, "Pressure-Driven Band Gap Engineering in Ion-Conducting Semiconductor Silver Orthophosphate", J. Mater. Chem. A 7, 4451-4458 (2019).

· Chen Yu, Xiaoxing Cheng, Chunyu Wang, and Zhiguo Wang, "Tuning the n-type contact of graphene on Janus MoSSe monolayer by strain and electric field", Physica E 110, 148-152 (2019).

· Sang Wook Han, Gi-Beom Cha, Manil Kang, Jong Duk Lee,and Soon Cheol Hong, "Hydrogen interaction with selectively desulfurized MoS2 surface using Ne+ sputtering", J. Appl. Phys. 125, 085102 (2019).

· Xue Gong, Huizhen Yao, Mei Er Pam, Stephen J. Pennycook, Xiaoxu Zhao, Dechao Geng, Yumeng Shi, Zibo Li, and Hui Ying Yang, "Location-selective Growth of Two-dimensional Metallic/Semiconducting Transition Metal Dichalcogenide Heterostructures", Nanoscale 11, 4183-4189 (2019).

· Yue Jia, Yunlong Liao, Leiming Wu, Youxian Shan, Xiaoyu Dai, Houzhi Cai, Yuanjiang Xiang, and Dianyuan Fan, "Nonlinear optical response, all optical switching, and all optical information conversion in NbSe2 nanosheets based on spatial self-phase modulation", Nanoscale 11, 4515-4522 (2019).

· Dongxiao Lu, Qiang Zhou, Fangfei Li, Xiaowei Li, and Geyu Lu, "Influence of interlayer interaction on relaxation dynamics of excitons in ultrathin MoS2", Nanoscale Adv. 1, 1186-1192 (2019).

· Mosayeb Naseri and Shiru Lin, "2D Li2S Monolayer: A Global Minimum Lithium Sulfide Sandwich", Chem. Phys. Lett. 722, 58-63 (2019).

· P. T. T. Le, Le M. Bui, Nguyen N. Hieu, Huynh V. Phuc, B. Amin, Nguyen V. Hieu, and Chuong V. Nguyen, "Tailoring electronic properties and Schottky barrier in sandwich heterostructure based on graphene and tungsten diselenide", Diam. Relat. Mater. 94, 129-136 (2019).

· Shan Zheng, Haichang Lu, Dameng Liu, and John Robertson, "Insertion of an ultrathin Al2O3 interfacial layer for the schottky barrier height reduction in WS2 field-effect transistors", Nanoscale 11, 4811-4821 (2019).

· Aldo Ivan Vidaña, David Zubia, Mariana Martinez, Edgar Acosta, José Mireles, Jr., Tsu-Jae King, and Sergio F. Almeida, "Conductivity modulation in strained transition-metal-dichalcogenides via micro-electro-mechanical actuation", Semicond. Sci. Technol. 34, 045013 (2019).

· Krystian Nowakowski, Rik van Bremen, Harold Zandvliet, and Pantelis Bampoulis, "Control of the Metal/TMDC Contact Properties Using 2-Dimensional Buffer Layers", Nanoscale 11, 5548-5556 (2019).

· Youngbum Kim, Seok Joon Yun, EunJi Lee, and Jeongyong Kim, "Near-field visualization of charge transfer at MoSe2/WSe2 lateral heterojunction", Opt. Mater. Express 9, 1864-1871 (2019).

· Mahider Tekalgne, Amirhossein Hasani, Quyet Van Le, and Soo Young Kim, "Transition metal dichalcogenide-based composites for hydrogen production", Funct. Compos. Struct. 1, 012001 (2019).

· Abeera Rahman, Hye Jung Kim, Mohammad Noor-A-Alam, and Young-Han Shin, "A theoretical study on tuning band gaps of monolayer and bilayer SnS2 and SnSe2 under external stimuli", Curr. Appl. Phys. 19, 709-714 (2019).

· T. A. Zepeda, N. L. Torres-García, J. Antúnez-García, D. H. Galván, B. Pawelec, R. Huirache-Acuña, J. N. Díaz de León, G. Alonso-Núñez, J. L. G. Fierro, and S. Fuentes, "Synergetic Effect in RuxMo(1-x)S2/SBA-15 Hydrodesulfurization Catalysts: Comparative Experimental and DFT Studies", Appl. Catal. B: Environ. 251, 143-153 (2019).

· J. Kopaczek, S. J. Zelewski, M. P. Polak, A. Gawlik, D. Chiappe, A. Schulze, M. Caymax, and R. Kudrawiec, "Direct and indirect optical transitions in bulk and atomically thin MoS2 studied by photoreflectance and photoacoustic spectroscopy", J. Appl. Phys. 125, 135701 (2019).

· Ji-Hyun Hur, "First principles study of the strain effect on band gap of λ phase Ta2O5", Comput. Mater. Sci. 164, 17-21 (2019).

· Thorsten Deilmann and Kristian Sommer Thygesen, "Finite-momentum exciton landscape in mono- and bilayer transition metal dichalcogenides", 2D Mater. 6, 035003 (2019).

· Shixin Liu, Mengxia Wang, Siyu Yin, Zheng Xie, Zhengping Wang, Shuyun Zhou, and Ping Chen, "Nonlinear Optical Properties of Few-Layer Rhenium Disulfide Nanosheets and Their Passively Q-switched Laser Application", Phys. Status Solidi A 216, 1800837 (2019).

· Ruben Canton-Vitoria, Habtom B. Gobeze, Vicente M. Blas-Ferrando, Javier Ortiz, Youngwoo Jang, Fernando Fernández-Lázaro, Ángela Sastre-Santos, Yusuke Nakanishi, Hisanori Shinohara, Francis D'Souza, and Nikos Tagmatarchis, "Excited state charge transfer in covalently functionalized MoS2 with zinc phthalocyanine donor-acceptor hybrid", Angew. Chem. Int. Ed. 58, 5712-5717 (2019).

· Mahesh Datt Bhatt and Jin Yong Lee, "High capacity conversion anodes in Li-ion batteries: A review", Int. J. Hydrogen Energy 44, 10852-10905 (2019).

· Qing-Yuan Chen, Ming-yang Liu, Chao Cao, and Yao He, "Engineering the electronic structure and optical properties of monolayer 1T-HfX2 using strain and electric field: A first principles study", Physica E 112, 49-58 (2019).

· Alberto Ambrosetti and Pier Luigi Silvestrelli, "Faraday-like Screening by Two-Dimensional Nanomaterials: A Scale-Dependent Tunable Effect", J. Phys. Chem. Lett. 10, 2044-2050 (2019).

· Bo You, Michael T. Tang, Charlie Tsai, Frank Abild-Pedersen, Xiaolin Zheng, and Hong Li, "Enhancing Electrocatalytic Water Splitting by Strain Engineering", Adv. Mater. 31, 1807001 (2019).

· Yaoyao Linghu and Chao Wu, "1T'-MoS2, a Promising Candidate for Sensing NOx", J. Phys. Chem. C 123, 10339-10345 (2019).

· Paweł Piotr Michałowski, Piotr Knyps, Pawel Ciepielewski, Piotr Caban, Ewa Dumiszewska, and Jacek Baranowski, "Destructive role of oxygen in growth of molybdenum disulfide determined by secondary ion mass spectrometry", Phys. Chem. Chem. Phys. 21, 8837-8842 (2019).

· Yun-Hang Qiu, kai Chen, Si-Jing Ding, Fan Nan, Yong-Jie Lin, Jia-Xing Ma, Zhong-Hua Hao, Li Zhou, and Ququan Wang, "Highly tunable nonlinear response of Au@WS2 hybrids with plasmon resonance and anti-Stokes effect", Nanoscale 11, 8538-8545 (2019).

· Xiang-Guo Li, Yun-Peng Wang, James N. Fry, X.-G. Zhang, and Hai-Ping Cheng, "Tunneling field-effect junctions with WS2 barrier", J. Phys. Chem. Solids 128, 343-350 (2019). See also: arXiv:1705.01205.

· Yang Yu, Jianchen Dang, Chenjiang Qian, Sibai Sun, Kai Peng, Xin Xie, Shiyao Wu, Feilong Song, Jingnan Yang, Shan Xiao, Longlong Yang, Yunuan Wang, Xinyan Shan, M. A. Rafiq, Bei-Bei Li, and Xiulai Xu, "Many-body effect of mesoscopic localized states in MoS2 monolayer", Phys. Rev. Materials 3, 051001(R) (2019).

· Peng Wang, Guangan Zhang, Zhibin Lu, Wen Yue, and Li-na Zhu, "Effect of electric currents on tribological behaviors of Ti/MoS2 composite film sliding against aluminum", Surf. Topogr.: Metrol. Prop. 7, 025014 (2019).

· Wanxue Li, Chunsheng Guo, Xiaojun Xin, Xingqiang Shi, and Yong Zhao, "Tunable magnetic spin ordering in MoN2 monolayer by structural deformation", Appl. Surf. Sci. 487, 519-525 (2019).

· Md. Rasidul Islam, Md. Sherajul Islam, Naim Ferdous, Khalid N. Anindya, and Akihiro Hashimoto, "Spin-orbit coupling effects on the electronic structure of two-dimensional silicon carbide", J. Comput. Electon. 18, 407-414 (2019).

· Yuyu Tian, Xuefeng Song, Jing Liu, Liping Zhao, Peng Zhang, and Lian Gao, "Generation of Monolayer MoS2 with 1T Phase by Spatial-Confinement-Induced Ultrathin PPy Anchoring for High-Performance Supercapacitor", Adv. Mater. Interfaces 6, 1900162 (2019).

· Changqing Lin, Yiran Li, Qilin Wei, Qian Shen, Yingchun Cheng, and Wei Huang, "Enhanced valley splitting of transition metal dichalcogenide by vacancies in robust ferromagnetic insulating chromium trihalides", ACS Appl. Mater. Interfaces 11, 18858-18864 (2019).

· Meng-Xue Guan, Chao Lian, Shi-Qi Hu, Hang Liu, Sheng-Jie Zhang, Jin Zhang, and Sheng Meng, "Cooperative evolution of intraband and interband excitations for high-harmonic generation in strained MoS2", Phys. Rev. B 99, 184306 (2019). See also: arXiv:1901.00575.

· Danxi Yang, Xiaoli Fan, Fengxia Zhang, Yan Hu, and Zhifen Luo, "Electronic and Magnetic Properties of Defected Monolayer WSe2 with Vacancies", Nanoscale Res. Lett. 14, 192 (2019).

· Artem V. Kuklin and Hans Ågren, "Quasiparticle electronic structure and optical spectra of single-layer and bilayer PdSe2: Proximity and defect-induced band gap renormalization", Phys. Rev. B 99, 245114 (2019).

· Xiaoxiao Guan, Guojun Zhu, Xiaolin Wei, and Juexian Cao, "Tuning the electronic properties of monolayer MoS2, MoSe2 and MoSSe by applying z-axial strain", Chem. Phys. Lett. 730, 191-197 (2019).

· Yi Yang, Yunzhen Zhang, Han Ye, Zhongyuan Yu, Yumin Liu, Bida Su, and Wenbin Xu, "Structural and electronic properties of 2H phase Janus transition metal dichalcogenide bilayers", Superlattice Microst. 131, 8-14 (2019).

· Pengxiang Bai, Shiying Guo, Shengli Zhang, Hengze Qu, Wenhan Zhou, and Haibo Zeng, "Electronic band structures and optical properties of atomically thin AuSe: first-principle calculations", J. Semicond. 40, 062004 (2019).

· Yu Cui, Ziqi Zhou, Tao Li, Kaiyou Wang, Jingbo Li, and Zhongming Wei, "Versatile Crystal Structures and (Opto)electronic Applications of the 2D Metal Mono-, Di-, and Tri-Chalcogenide Nanosheets", Adv. Funct. Mater. 29, 1900040 (2019).

· Xu Han, Jiangxiazi Lin, Junwei Liu, Ning Wang, and Ding Pan, "Effects of Hexagonal Boron Nitride Encapsulation on the Electronic Structure of Few-Layer MoS2", J. Phys. Chem C.123, 14797-14802 (2019).

· Hamidreza Zobeiri, Ridong Wang, Qianying Zhang, Guangjun Zhu, and Xinwei Wang, "Hot Carrier Transfer and Phonon Transport in Suspended nm WS2 Films", Acta Materialia 175, 222-237 (2019).

· Abeera Rahman, Hye Jung Kim, Mohammad Noor-A-Alam, and Young-Han Shin, "A theoretical study on tuning band gaps of monolayer and bilayer SnS2 and SnSe2 under external stimuli", Curr. Appl. Phys. 19, 709-714 (2019).

· Sunam Jeon, Yun-Tak Oh, and Youngkuk Kim, "Ferromagnetic nodal-line metal in monolayer h-InC", Phys. Rev. B 100, 035406 (2019). See also: arXiv:1810.08563.

· Lu Zhou and Lei Fu, "Strain regulation of two-dimensional transition metal dichalcogenides", Chin. Sci. Bull. 64, 1817-1831 (2019) (written in Chinese).

· Sang Wook Han, Gi-Beom Cha, Kyoo Kim, and Soon Cheol Hong, "Hydrogen interaction with a sulfur-vacancy-induced occupied defect state in the electronic band structure of MoS2", Phys. Chem. Chem. Phys. 21, 15302-15309 (2019).

· Christopher C. Price, Nathan C. Frey, Deep Jariwala and Vivek B. Shenoy, "Engineering Zero-Dimensional Quantum Confinement in Transition-Metal Dichalcogenide Heterostructures", ACS Nano 13, 8303-8313 (2019).

· Chiao-Yun Chang, Hsiang-Ting Lin, Ming-Sheng Lai, Cheng-Li Yu, Chong-Rong Wu, He-Chun Chou, Shih-Yen Lin, Chi Chen, and Min-Hsiung Shih, "A Large-Area and Strain-Reduced Two-Dimensional Molybdenum Disulfide Monolayer Emitter on a Three-Dimensional Substrate", ACS Appl. Mater. Interfaces 11, 26243-26249 (2019).

· Shanbao Chen, Chengxi Huang, Huasheng Sun, Junfei Ding, Puru Jena, and Erjun Kan, "Boosting the Curie Temperature of Two-Dimensional Semiconducting CrI3 Monolayer through Van der Waals Heterostructures", J. Phys. Chem. C 123, 17987-17993 (2019).

· Jiwon Shin, Kyungjune Cho, Tae-Young Kim, Jinsu Pak, Jae-Keun Kim, Woocheol Lee, Jaeyoung Kim, Seungjun Chung, Woong-Ki Hong, and Takhee Lee, "Dose-dependent effect of proton irradiation on electrical properties of WSe2 ambipolar field effect transistors", Nanoscale 11, 13961-13967 (2019).

· Yanbo Zi, Chong Li, Chunyao Niu, Fei Wang, Jun-Hyung Cho, and Yu Jia, "Reversible direct-indirect band transition in alloying TMDs heterostructures via band engineering", J. Phys.: Condens. Matter 31, 435503 (2019).

· Yoon-Ho Choi, Gi-Hyeon Kwon, Jae-Hun Jeong, Kwang-Sik Jeong, Hyeokjae Kwon, Youngseo An, Minju Kim, Hyoungsub Kim, Yeonjin Yi, Seongil Im, and Mann-Ho Cho, "Trap-assisted high responsivity of a phototransistor using bi-layer MoSe2 grown by molecular beam epitaxy", Appl. Surf. Sci. 494, 37-45 (2019).

· Fakun Wang, Yue Zhang, Yu Gao, Peng Luo, Jianwei Su, Wei Han, Kailang Liu, Huiqiao Li, and Tianyou Zhai, "2D Metal Chalcogenides for IR Photodetection", Small 15, 1901347 (2019).

· Maciej J. Szary, Marek T. Michalewicz, and Marian W. Radny, "Giant spin splitting induced by a symmetry-braking van der Waals interaction", Appl. Surf. Sci. 494, 619-626 (2019).

· James T. Gibbon and Vinod R. Dhanak, "Properties of Transition Metal Dichalcogenides (Book Chapter)", Two Dimensional Transition Metal Dichalcogenides (Editors: N. S. Arul and V. D. Nithya), Chapter 3, pp. 69-106 (2019) (Springer).

· Dhanshree Pandey and Aparna Chakrabarti, "Prediction of two-dimensional monochalcogenides: MoS and WS", Phys. Lett. A 383, 2914-2921 (2019).

· Bhuvaneshwari Balasubramaniam, Narendra Singh, Prasenjit Kar, Ankit Tyagi, Jai Prakash, and Raju Kumar Gupta, "Engineering of transition metal dichalcogenides based 2D nanomaterials through doping for environmental applications", Mol. Syst. Des. Eng. 4, 804-827 (2019).

· Urmilaben P. Rathod, Bimin Cai, Chukwudi Iheomamere, Gilbert Nyandoto, Andrey A. Voevodin, and Nigel D. Shepherd, "Growth of pulsed laser deposited few-layer WS2 films", J. Vac. Sci. Technol. A 37, 051505 (2019).

· Zhe Zhang, Jiling Li, Guowei Yang, and Gang Ouyang, "Interface Engineering of Band Evolution and Transport Properties of Bilayer WSe2 under Different Electric Fields", J. Phys. Chem. C 123, 19812-19819 (2019).

· Lu-Lu Yang, Jun-Jie Shi, Min Zhang, Zhongming Wei, Yi-Min Ding, Meng Wu, Yong He, Yu-Lang Cen, Wen-Hui Guo, Shu-Hang Pan, and Yao-Hui Zhu, "The 2D InSe/WS2 Heterostructure with Enhanced Optoelectronic Performance in the Visible Region", Chin. Phys. Lett. 36, 097301 (2019). See also: arXiv:1808.01610.

· Shuangjie Liu, Xiao-dong Zhang, Xiaosong Gu, and Dong Ming, "Photodetectors based on two dimensional materials for biomedical application", Biosens. Bioelectron. 143, 111617 (2019).

· Pratik M. Pataniya, Chetan K. Zankat, Mohit Tannarana, Abhishek Patel, Som Narayan, G. K. Solanki, K. D. Patel, Prafulla K. Jha, V. M. Pathak, "Photovoltaic activity of WSe2/Si hetero junction", Mater. Res. Bull. 120, 110602 (2019).

· Zihan Wei and Serge Zhuiykov, "Challenges and recent advancements of functionalization of two-dimensional nanostructured molybdenum trioxide and dichalcogenides", Nanoscale 11, 15709-15738 (2019).

· T. Smoleński, O. Cotlet, A. Popert, P. Back, Y. Shimazaki, P. Knüppel, N. Dietler, T. Taniguchi, K. Watanabe, M. Kroner, and A. Imamoglu, "Interaction-Induced Shubnikov-de Haas Oscillations in Optical Conductivity of Monolayer MoSe2", Phys. Rev. Lett. 123, 097403 (2019). See also: arXiv:1812.08772.

· Ying Wang, Changbao Huang, Dong Li, Feng Huang, Xueyong Zhang, Kai Huang, and Jinrong Xu, "Stress- and electric-field-induced band gap tuning in hexagonal boron phosphide layers", J. Phys.:Condens. Matter 31, 465502 (2019).

· Shuaiwen Gan, Haiqi Wang, Junwu Liang, Xiaoyu Dai, and Yuanjiang Xiang, "Ultra-sensitive refractive index sensors based on Bloch surface waves with transition metal dichalcogenides", IEEE Sensors J. 19, 8675-8680 (2019).

· E. A. Fajardo and R. Winkler, "Effective dynamics of two-dimensional Bloch electrons in external fields derived from symmetry", Phys. Rev. B 100, 125301 (2019). See also: arXiv:1906.04391.

· Seyed-Mohammad Tabatabaei, Mohammad-Javad Farshchi-Heydari, Mohsen Asad, and Morteza Fathipour, "Unravelling the physisorption characteristics of H2S molecule on biaxially strained single-layer MoS2", Nanoscale Adv. 1, 3452-3462 (2019).

· Shun Li, Zhicheng Zhao, Dongfang Yu, Jin-Zhu Zhao, Yiping Su, Yong Liu, Yuanhua Lin, Weishu Liu, Hu Xu, and Zuotai Zhang, "Few-layer transition metal dichalcogenides (MoS2, WS2, and WSe2) for water splitting and degradation of organic pollutants: Understanding the piezocatalytic effect", Nano Energy 66, 104083 (2019).

· Zhen Chi, Hailong Chen, Qing Zhao, and Yu-Xiang Weng, "Ultrafast carrier and phonon dynamics in few-layer 2H-MoTe2", J. Chem. Phys. 151, 114704 (2019).

· Rabindra Biswas, Medha Dandu, Sruti Menon, Keshav Kumar Jha, Jyothsna K. M., Kausik Majumdar, and Varun Raghunathan, "Third-harmonic generation in multilayer Tin Diselenide under the influence of Fabry-Perot interference effects", Opt. Express 27, 28855-28865 (2019).

· Elena A. Korznikova and Sergey V. Dmitriev, "Anharmonic Excitations in Graphene and Other 2-D Nanomaterials (Book Chapter)", Carbon Nanomaterials: Modeling, Design, and Applications (Editors: Kun Zhou), Chapter 2, pp. 49-68 (2019) (CRC Press).

· Zhu Wang, Shuai-Wei Fan, Xi-Dong Wang, Guo-Ying Gao, and Zhan-Sheng Lu, "Two-dimensional Au2B: Robust non-magnetic metallicity independent of the native defects, strain and functional groups", Europhys. Lett. 127, 47002 (2019).

· Francisco Sánchez-Ochoa, Francisco Hidalgo, Miguel Pruneda, and Cecilia Noguez, "Unfolding method for periodic twisted systems with commensurate Moiré patterns", J. Phys.: Condens. Matter 32, 025501 (2019).

· Nityasagar Jena, Dimple, Raihan Ahammed, Ashima Rawat, Manish Kumar Mohanta, and Abir De Sarkar, "Valley drift and valley current modulation in strained monolayer MoS2", Phys. Rev. B 100, 165413 (2019).

· Sajedeh Manzeli, Dumitru Dumcenco, Guilherme Migliato Marega, and Andras Kis, "Self-sensing, tunable monolayer MoS2 nanoelectromechanical resonators", Nat. Commun. 10, 4831 (2019).

· János Pető, Gergely Dobrik, Gergő Kukucska, Péter Vancsó, Antal A. Koós, János Koltai, Péter Nemes-Incze, Chanyong Hwang & Levente Tapasztó, "Moderate strain induced indirect bandgap and conduction electrons in MoS2 single layers", npj 2D Mater. Appl. 3, 39 (2019).

· Huabing Shu, Minglin Zhao and Minglei Sun, "Theoretical Study of GaN/BP van der Waals Nanocomposites with Strain-Enhanced Electronic and Optical Properties for Optoelectronic Applications", ACS Appl. Nano Mater. 2, 6482-6491 (2019).

· Won Seok Yun and J. D. Lee, "Single-layer CdPSe3: A promising thermoelectric material persisting in high temperatures", Appl. Phys. Lett. 115, 193105 (2019).

· Ziwen Cheng, Bozhao Zhang, Xuhong An, Zhibin Lu, Guangan Zhang, Fei Ma and Feng Zhou, "First-Principles Delimitation of the Boundary Between Intralayer and Interlayer in Two-Dimensional Structures", J. Phys. Chem. C 123, 26912-26920 (2019).

· Chen Yu and Zhiguo Wang, "Strain Engineering and Electric Field Tunable Electronic Properties of Janus MoSSe/WX2 (X = S, Se) van der Waals Heterostructures", Phys. Status Solidi B 256, 1900261 (2019).

· Lutz Waldecker, Archana Raja, Malte Rösner, Christina Steinke, Aaron Bostwick, Roland J. Koch, Chris Jozwiak, Takashi Taniguchi, Kenji Watanabe, Eli Rotenberg, Tim O. Wehling, and Tony F. Heinz, "Rigid Band Shifts in Two-Dimensional Semiconductors through External Dielectric Screening", Phys. Rev. Lett. 123, 206403 (2019). See also: arXiv:1907.05535.

· Yichao Zhang and David J. Flannigan, "Observation of Anisotropic Strain-Wave Dynamics and Few-Layer Dephasing in MoS2 with Ultrafast Electron Microscopy", Nano Lett. 19, 8216-8224 (2019).