Topological band order transition and quantum spin Hall edge engineering in functionalized X-Bi(111) (X = Ga, Bi, and Tl) bilayer
Topological band order transition and quantum spin Hall edge engineering in functionalized X-Bi(111) (X = Ga, Bi, and Tl) bilayer
Citing Articles
2018 {4}
· Qing Lu, Busheng Wang, Xiang-Rong Chen, and Wu-Ming Liu, "Robust large-gap quantum spin Hall insulators in methyl-functionalized III-Bi buckled honeycombs", Phys. Rev. Mater. 2, 014005 (2018). See also: arXiv:1707.07120.
· Yunzhen Zhang, Han Ye, Zhongyuan Yu, Han Gao, and Yumin Liu, "Structural and electronic properties of hydrogenated GaBi and InBi honeycomb monolayers with point defects", RSC Adv. 8, 7022-7028 (2018).
· Vahid Derakhshan, Ali G. Moghaddam, and Davide Ceresoli, "Tailoring topological states in silicene using different halogen-passivated Si(111) substrates", Phys. Rev. B 97, 125301 (2018). See also: arXiv:1706.00945.
· Heng Gao, Wei Wu, Tao Hu, Alessandro Stroppa, Xinran Wang, Baigeng Wang, Feng Miao, and Wei Ren, "Spin valley and giant quantum spin Hall gap of hydrofluorinated bismuth nanosheet", Sci. Rep. 8, 7436 (2018).
2021 {1}
· Ming-Yang Liu, Long Gong, Wen-Zhong Li, Meng-Long Zhang, Yao He, and Chao Cao, "Band engineering of XBi (X=Si, Ge, Sn, and Pb) single layers via strain and surface chemical-modulation", Appl. Surf. Sci. 540, 148268 (2021).
2022 {2}
· Bojun Wang, Jianwei Wang, and Xiaobin Niu, "Growth mechanism and self-polarization of bilayer InSb (111) on Bi (001) substrate", J. Phys.: Conden. Matter 34, 335001 (2022).
· Yunyouyou Xia, Suhua Jin, Jiayu Hu, Ralph Claessen, Werner Hanke, Ronny Thomale, and Gang Li, "Band inversion induced large-gap quantum spin Hall states in III-Bi-monolayer/SiO2", Phys. Rev. B 106, 165203 (2022). See also: arXiv:2112.13483.
2025 {1}
· Peter Hess, "Elemental Group–VA Monolayers (Book Chapter)", Bonding, Structure, and Performance of Two-Dimensional Materials (An Introduction Based on the Periodic Table), pp 191-223 (2025) (Spinger Cham).