Electron mediated/enhanced ferromagnetism in a hydrogen-annealed Mn:Ge magnetic semiconductor
Electron mediated/enhanced ferromagnetism in a hydrogen-annealed Mn:Ge magnetic semiconductor
Citing Articles
2012 {3}
· Neelabh Srivastava and P. C. Srivastava, "A study on exchange coupled structures of Fe/NiO and NiO/Fe interfaced with n- and p-silicon substrates", J. Appl. Phys. 111, 123909 (2012).
· Dang Dung Dung, Nguyen Thi Mua, Hoang Vu Chung, and Sunglae Cho, "Novel Mn-doped Ge: From Basis to Application", J. Mater. Sci. Engine. A 2, 248-271 (2012).
· Dang Dung Dung, Nguyen Thi Mua, Nguyen Van Quyet, and Sunglae Cho, "Hole and/or Electron Mediated Ferromagnetism in Diluted Magnetic Semiconductor?", J. Mater. Sci. Engine. B 2, 317-323 (2012).
2016 {1}
· Juan Pei, Ai-chun Yang, Kun Zhang, Huan-huan Li, Li-min He, Yu-feng Tian, Yu-feng Qin, Shi-shou Kang, Shu-qin Xiao, and Shi-shen Yan, "Hydrogen enhanced magnetization and exchange interaction in amorphous (FeCo)0.70Ge0.30R-H films", J. Alloys Compd. 658, 98-103 (2016).
2018 {1}
· Dang Duc Dung, Jiyoun Choi, Wuwei Feng, Nguyen Cao Khang, Sunglae Cho, "Oxidized Mn:Ge magnetic semiconductor: Observation of anomalous Hall effect and large magnetoresistance", Physica B 532, 119-125 (2018).
2022 {1}
· Nguyen Hoang Thoan, Bui Viet Khoa & Dang Duc Dung, "A Critical Review of Current Studies on Hydrogen Defect in Diluted Magnetic Semiconductors and Relative Ferroelectric Materials for Smart Electronic Applications", J. Supercond. Nov. Magn. 35, 3051-3065 (2022).