The trapping of N2 molecules and the reduction in its bonding length in Ge(001) due to N2+ ion implantation
The trapping of N2 molecules and the reduction in its bonding length in Ge(001) due to N2+ ion implantation
Citing Articles
2011 {1}
· Y. M. Lee, S. H. Jang, M. Han, and M.-C. Jung, "Chemical states and photoluminescence of Si0.3Ge0.7-nitride film formed by N2+ gas", Appl. Phys. Lett. 99, 123103 (2011).
2018 {1}
· Homnath Luitel, Mahuya Chakrabarti, A. Sarkar, and S. Dechoudhury, "Ab-initio calculation and experimental observation of room temperature ferromagnetism in 50 keV nitrogen implanted rutile TiO2", Mater. Res. Express 5, 026104 (2018).
2022 {2}
· Peng Lyu, Qi Gao, Tao Peng, Haoming Yuan, Qingfeng Guan, Jie Cai, Haixia Liu, Xinlin Liu, Conglin Zhang, and Jintong Guan, "Microstructure and properties of mono-crystalline germanium enhanced by high-current pulsed electron beam", Vacuum 206, 111451 (2022).
· Kotaro Watanabe, Takuma Kawaguchi, and Shinya Aikawa, "p-type conversion of distorted SnOx thin film by mild thermal annealing treatment in pure N2 environment", AIP Adv. 12, 105102 (2022).
2025 {2}
· Yuqi Wu Xiao Han, and Jinlu He, "Unraveling the Effects of Metal–Support Interaction on Nitrogen Reduction: A Theoretical Study in Au13/BiOCl", J. Phys. Chem. Lett. 16, 924-931 (2025).
· Shahjad Ali and Md. Ehesan Ali, "Quantum spin sensors for open-shell molecules", J. Mater. Chem. C 13, 7760-7771 (2025).