2D TMD-Devices & Applications

• Plasma-treated MoTeₓOᵧ layer enables uniform ALD nucleation.

• Conformal HfO₂ layer induces n-type doping via Vₒ and Qf.

• Charge trapping at interfaces affects Vth stability.

• Thin HfO₂ passivates surface and improves air stability.

                             Electronic Materials Letters 2025 22, 122-131

• Wafer-scale synthesis & phase stabilization of 1T-MoS2 

• Superior electrical characteristics of 1T-Phase

• Enhanced nonvolatile memory performance

• Optoelectronic synaptic functionality under light stimulation

Small Methods  2025 e2500200

• Nano-crystalline + Memristor = "Nanoristor"

• Superior performance uniformity and producibility

• Unique forming-free operation

• Feasibility of Nanoristor for neuromorphic applications

Journal of Materials Chemistry C  2024 12, 6350-6358

• Multiple-phase WS2/p-Si device

• Controllable tunneling performance through D-1T/2H phase ratio

• Robust & high performance of NDR (negative differential resistance) 

• Feasibility of novel photo-reactive RAM for electrical and optical data storage

Small Science 2024 4, 2300202

(Front Cover)

• Vertical TMD-TMD heterostructure 

• MoS2-WS2 heterostructure photodevices

• Photoresponsivity of 83.75 mA/W

• Photoswitching time ~60 ms

ACS Applied Materials & Interfaces 2021 13, 8710-8717

• MoS2-WS2 Vertical heterostructure (MWVH)

• 225 diodes on 4-inch MWVH

• Uniformity: standard deviation of 4.12 x 10-3 uA and 0.375 uA

ACS Nano 2021 15, 707-718