The project focus is on the traceable measurement and characterisation of quantum anomalous Hall effect (QAHE) materials as devices and primary resistance standard candidates.
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BIPM 150
BIPM 150
BIPM150! The global metrology community is coming together in Paris for the World Metrology Day to celebrate the 150th anniversary of the Metre Convention. Martina Marzano' s poster "๐๐ฐ๐ธ๐ข๐ณ๐ฅ๐ด ๐ข๐ฏ ๐ฆ๐ข๐ด๐ช๐ฆ๐ณ ๐ณ๐ฆ๐ข๐ญ๐ช๐ด๐ข๐ต๐ช๐ฐ๐ฏ ๐ฐ๐ง ๐ต๐ฉ๐ฆ ๐ฐ๐ฉ๐ฎ ๐ธ๐ช๐ต๐ฉ ๐ต๐ฉ๐ฆ ๐ฒ๐ถ๐ข๐ฏ๐ต๐ถ๐ฎ ๐ข๐ฏ๐ฐ๐ฎ๐ข๐ญ๐ฐ๐ถ๐ด ๐๐ข๐ญ๐ญ ๐ฆ๐ง๐ง๐ฆ๐ค๐ต" was selected from hundreds for an oral presentation to the audience!ย
The specific objectives of the project are:
To improve the growth of magnetically doped topological insulator (TI), (e.g., vanadium doped Bi2Te3 and Sb2Te3) thin film samples by molecular beam epitaxy on closely lattice matched substrates. Furthermore, to explore the effects of anisotropic magnetic insulator layers (e.g BST/RE-BST on magnetic insulators) interfaced with TIs and to produce high structural quality materials (Kagome magnets, V-BST on magnetic insulators) with properties optimised for the QAHE.
To investigate the bulk electronic, structural, magnetic, and magneto-electronic properties of the QAHE films and devices produced in Objective 1 under various temperatures (from below 50ย mK up to 300 K), currents (from below 100ย nA to over 1ย ยตA) and applied magnetic fields (from 0 to 10ย T) for different growth conditions. In addition, to investigate the limitations of QAHE, i.e., low critical temperatures and currents when working on precision growth-control of interfaces.ย
To investigate fabricated QAHE thin films and devices produced in Objective 1 by surface sensitive scanning probes (SPM) and magnetometry techniques (e.g. Scanning SQUID, MFM, scanning SNOM) at low temperatures (from below 50ย mK to 300ย K), and to characterise their magnetic and structural properties using X-ray, and neutron investigations.ย
To develop and carry out detailed metrological assessments of QAHE devices (e.g. V-BST) using several techniques (e.g. CCC, DCC, impedance bridge), both at sub-Kelvin and above 1ย K temperatures, aiming at QAHE resistance quantisation accuracy between 1 and 10ย ppm, above 1ย K, at currents above 1ย ฮผA and at low-to-zero applied magnetic field. In addition, to write a good practice guide on the use the QAHE devices for resistance metrology.ย
To facilitate the take up of the technology and measurement infrastructure developed in the project by standards developing organisations (BIPM), end users interested in applications, such as spintronics and topological quantum computing and advance the research and progress in the field of TIs.
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