• For CNTFET, Gate capacitance significantly increases with the use of high κ.
• For CNTFET, Gate capacitance increases to a small amount with oxide thickness.
• For SBCNTFET, Current and gm are significantly increases for high κ dielectric. For low κ (=3.9) dielectric SiO₂, SS is 125 mV/dec, where for HfO₂ (κ=16) and ZrO₂ (κ=25) SS is much lower.
• For SBCNTFET, slightly higher ON current and transconductance is found for thinner gate dielectric.
• Drain current exhibits insignificant change with temperature.
• Transconductance profile also shows negligible change for above 0.2V gate bias and decreases
• with temperature for sub-0V condition. On the other hand, SS is significantly decreased for lower temperature.
• Equally doped S/D and channel with no potential gradient shows greater On/off ratio and lower SS. On current increases slightly and Off current decreases remarkably for long gate. S/D length has no effect in On current, but Off current is lower for short S/D. Though On current increases with CNT diameter, Off current increases more drastically to reduce On/off ratio and degrade SS.

(13, 0) zigzag CNT channel with 10-20nm length is found optimum to be used in channel.

The simulator can be found in my github page in this link: https://github.com/mdshafayat/CNT-MOSFET

Publications:

International Journals:

1. Md. Shafayat Hossain, Saeed Uz Zaman Khan, Ahmedullah Aziz, Muhammad Abdullah Arafat and Quazi D. M. Khosru, “Size dependent Transport of Surrounding Gate Carbon Nanotube Field Effect Transistor”, ECS J. Solid State Sci. Technol. 2013 volume 2, issue 9, M23-M27, June 2013. [pdf]
2. Md. Shafayat Hossain, Saeed Uz Zaman Khan, Ahmedullah Aziz, Mohammad Wahidur Rahman, Muhammad Abdullah Arafat “Effect of Gate Dielectric on Ballistic Transport of Cylindrical Carbon Nanotube MOSFET,” ECS Transaction, vol. 53, issue 1, p. 139-146, 2013. (presented in 223rd ECS Meeting, Toronto, Canada, May 2013) [pdf]

International Conferences:

1. Md. Shafayat Hossain, Saeed Uz Zaman Khan, Ahmedullah Aziz and Mohammad Wahidur Rahman, “Effect of Temperature on Ballistic Transport of Cylindrical (10, 0) CNTFET”, IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, 3-5 June, 2013. [pdf]