We have proposed an In-composition graded channel in GAA structure which provides better oxide-semiconductor interface.

Control over threshold voltage via channel doping can be enhanced to a great extent using graded doping.

• Gate capacitance is not affected due to In composition grading.
• Increased comparative width of In_0.75Ga_0.25As layer results in lower threshold voltage.
• Decreased core doping also results in lower threshold voltage
• Proposed In-composition graded channel in GAA structure which provides better oxide-semiconductor interface also reduces gate leakage.
• Graded structure shows better transfer characteristics i.e. larger transconductance than In_0.75Ga_0.25As device at higher gate voltage.
• Higher ballistic current and better speed i.e. lower gate-delay and other delay products are observed for lightly doped inner layer whereas large performance-degradation in On current and gate delay at VDD is found for highly doped inner core mainly because of large shift in threshold voltage to the positive end due to increased charge.
• The graded structure with lightly doped thin inner In_0.53Ga_0.47As layer is suited for high-current and high-speed application.

The simulator can be found in my github page in this link: https://github.com/mdshafayat/Graded-III-V-nanowire-GAAFET