BJT TRANSISTOR
In the deficiency of light, BJT phototransistor allows leakage among collectors as well as an emitter of 100 nA otherwise low. Once this transistor is exposed to the beam, it performs upto 50mA. This distinguishes it from photodiode which cannot allow much current.
FET TRANSISTOR
This kind of phototransistor includes two terminals that connect inside through its collector & emitter otherwise source & drain within FET. The transistor’s base terminal reacts to light & controls the current flow among the terminals.
A normal transistor includes an emitter, base, and collector terminals. The collector terminal is biased positively relating to the emitter terminal & the BE junction is reverse biased.
1) A phototransistor activates once the light strikes the base terminal & the light triggers the phototransistor by allowing the configuration of hole-electron pairs as well as the current flow across the emitter or collector.
2) When the current increases, then it is concentrated as well as changed into voltage.
3) Generally, a phototransistor doesn’t include a base connection.
4) The base terminal is disconnected as the light is used to allow the flow of current to supply throughout the phototransistor.
Low-cost visible and near-IR photodetection.
Available with gains from 100 to over 1500.
Moderately fast response times.
Available in a wide range of packages including epoxy-coated, transfer-molded, and surface mounting technology.
Electrical characteristics were similar to that of signal transistors.