The scanning electron microscope (SEM) is a versatile instrument designed to provide high‑resolution imaging of surfaces at the micro‑ and nanoscale. Its core function is to reveal morphological, structural, and compositional details of materials with far greater depth of field and magnification than conventional optical microscopy.
Its fundamental principle relies on a finely focused electron beam that is scanned across the specimen surface. As the electrons interact with the material, they generate a variety of signals—such as secondary electrons, backscattered electrons, and characteristic x‑rays—that are collected by dedicated detectors. By processing these signals, the SEM reconstructs detailed images and compositional maps with nanometer‑scale resolution. This strong electron–matter interaction provides both topographical contrast and elemental sensitivity, making the technique uniquely powerful for surface and microstructural analysis.
SEM is important for materials research is that it provides direct access to the structural and compositional information of materials at the micro‑ and nanoscale. It allows researchers to investigate the morphology, organization, and quality of micro‑ and nanostructures, offering insights into growth processes, defect formation, and overall material performance. In the context of semiconductors and metallic systems, SEM plays a central role in bridging structural characterization with functional understanding, making it an indispensable tool for advancing applications in electronics, photonics, and nanotechnology.
The FINE group operates a FEI Inspect Scanning Electron Microscope (SEM), a robust platform for high‑resolution imaging and microstructural analysis of advanced materials.
Imaging modes: It is optimized for secondary electron (SE) imaging, providing detailed surface morphology at the micro‑ and nanoscale.
EBSD integration: SEM is coupled with a Bruker EBSD detector, enabling crystallographic orientation mapping and phase identification, essential for understanding grain structure, texture, and defect distribution.
EBIC capability: The system can be equipped with a Matelect Induced Signal Monitor (ISM5) to perform electron‑beam induced current (EBIC) measurements, allowing the correlation of microstructural features with local electronic and optoelectronic properties.
Operational range: SEM with variable accelerating voltages (typically 1–30 kV) and adjustable working distances provide flexibility for imaging both delicate nanostructures and bulk samples.