The Hall effect measurement system is a tool for probing the electrical properties of materials under a magnetic field. In the classical Hall effect, an electric current is passed through a sample while a perpendicular magnetic field is applied. The magnetic field deflects the charge carriers, producing a transverse voltage (the Hall voltage). From this, one can determine the carrier type (electrons or holes), their concentration, mobility, resistivity, and related parameters.

The Ecopia HMS7000 is such a classical Hall effect system, but with an added photonic module. This means that, in addition to driving current and applying a magnetic field, the system can illuminate the sample with light of controlled wavelength and intensity. By measuring the Hall effect under illumination and in the dark, researchers can study how photoexcitation alters carrier density, mobility, and other transport properties.

This illumination-assisted Hall effect measurement is particularly valuable for semiconductors, photovoltaics, and other optoelectronic materials, where light strongly influences charge carrier dynamics. The system therefore combines the well-established electrical Hall technique with controlled optical excitation, enabling deeper insights into both electronic and photoelectronic behavior.

Here are the key capabilities of the Ecopia HMS7000 Photonic Hall Effect measurement system:

• Photonic Illumination: It uses a "Visible illumination" photonic module with red, green, and blue LEDs.

• Measurement Method: The system uses the Van der Pauw method to calculate material properties, so the sample thickness must be entered before starting the measurement.”

• Material Characterization: It can characterize various properties of photoelectric semiconductors, including:

1. Charge carrier mobility

2. Majority carrier density

3. Doping type (P/N)

4. Hall Voltage and Hall Coefficient

5. Material resistance and resistivity

• Wide Temperature Range: The system can perform measurements in a wide temperature range, from 80K to 350K.