Atomic Force Microscope (AFM) is a cornerstone nanotechnology tool that enables high-resolution surface characterization at the nanoscale. Its core function is to generate precise topographical maps and quantify diverse localized surface properties by scanning a sharp probe across a sample. The fundamental principle of AFM relies on detecting minute interatomic forces between the probe tip and the sample surface, which induce a measurable deflection of a flexible cantilever. This deflection, typically monitored by a laser detection system, allows for the reconstruction of surface topography or the mapping of various material characteristics. Why AFM is important stems from its unparalleled capability to provide insights into physical, chemical, and biological phenomena at an unprecedented resolution, unconstrained by sample conductivity or environment. This versatility, augmented by a wide array of specialized tips, makes AFM an indispensable technique across numerous scientific disciplines, including materials science, semiconductor research, and life sciences, driving advancements in fundamental understanding and technological innovation.
FINE group's AFM (Nanotec-Dulcinea) is equipped to operate in a variety of modes, allowing us to conduct diverse experiments tailored to specific research objectives and material characterization needs. We can list these modes;
Contact Mode: In this original AFM mode, the tip remains in continuous physical contact with the sample as it scans. Cantilever deflection is used to map topography. While offering high resolution, it can cause sample damage or tip wear due to constant friction, though it's useful for hard surfaces and friction mapping.
Tapping Mode: This gentle, widely used mode makes the cantilever oscillate and intermittently "tap" the sample surface. Changes in oscillation are measured to create a topographical map, minimizing lateral forces and making it ideal for soft or sensitive samples. It can also provide material property insights through phase imaging.
AFM is employed within the FINE group for the precise determination of oxide material thickness. For example, P. Pérez-Peinado et al. (2025) utilized AFM for this purpose for β-Ga2O3 nanomembranes, with their findings illustrated in Figure 2-c and Figure 2-d of their publication.