Dr. Oleksiy Anopchenko
Dr. Oleksiy Anopchenko
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Oleksiy Anopchenko graduated from Kharkov Polytechnic Institute, Kharkiv, Ukraine, in 1993, and received Ph.D. degree in solid-state physics from Comenius University, Bratislava, Slovakia, in 2001. He was an Engineer with the B. I. Verkin Institute for Low Temperature Physics and Engineering, National Academy of Sciences of Ukraine, in 1993-1997, and a Research Associate with the Institute of Physics, Slovak Academy of Sciences, in 1997-2001. From 2001 to 2004, he was a Guest Researcher with the Polymers Division at NIST. From 2007 to 2016, he was with the Department of Physics, University of Trento, and Sapienza University of Rome, Italy, working on several industrial and European research projects.
His research interests include electromagnetic surface waves, micro- and nano-photonics, and silicon photonics.
Selected publications:
Anopchenko, A., A. Occhicone, R. Rizzo, A. Sinibaldi, G. Figliozzi, N. Danz, et al. 2016. Effect of thickness disorder on the performance of photonic crystal surface wave sensors. Optics Express 24: 7728-7742. doi:10.1364/oe.24.007728.
Anopchenko, A., A. Prokofiev, I.N. Yassievich, S. Ossicini, L. Tsybeskov, D.J. Lockwood, et al. 2013. Silicon-Based Light Sources. In: L. Pavesi and L. Vivien, editors, Handbook of Silicon Photonics. Taylor & Francis. p. 333-438.
Anopchenko, A., N. Prtljaga, A. Tengattini, J.M. Fedeli and L. Pavesi. 2013. Infrared photoconductivity of Er-doped Si nanoclusters embedded in a slot waveguide. Applied Physics Letters 103: 061105-061103. doi:10.1063/1.4817818.
Anopchenko, A., A. Tengattini, A. Marconi, N. Prtljaga, J.M. Ramirez, O. Jambois, et al. 2012. Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes. Journal of Applied Physics 111: 063102. doi:10.1063/1.3694680.
Anopchenko, A., A. Marconi, M. Wang, G. Pucker, P. Bellutti and L. Pavesi. 2011. Graded-size Si quantum dot ensembles for efficient light-emitting diodes. Applied Physics Letters 99: 181108-181103 doi:10.1063/1.3658625.
Yuan, Z., G. Pucker, A. Marconi, F. Sgrignuoli, A. Anopchenko, Y. Jestin, et al. 2011. Silicon nanocrystals as a photoluminescence down shifter for solar cells. Solar Energy Materials and Solar Cells 95: 1224-1227. doi:10.1016/j.solmat.2010.10.035.
Anopchenko, A., N. Daldosso, R. Guider, D. Navarro-Urrios, A. Pitanti, R. Spano, et al. 2010. Photonics Application of Silicon Nanocrystals. Silicon Nanocrystals. Wiley-VCH Verlag GmbH & Co. KGaA. p. 445-485.
Anopchenko, A., A. Marconi, E. Moser, S. Prezioso, M. Wang, L. Pavesi, et al. 2009. Low-voltage onset of electroluminescence in nanocrystalline-Si/SiO2 multilayers. Journal of Applied Physics 106: 033104-033108. doi:10.1063/1.3194315.
Yuan, Z., A. Anopchenko, N. Daldosso, R. Guider, D. Navarro-Urrios, A. Pitanti, et al. 2009. Silicon Nanocrystals as an Enabling Material for Silicon Photonics. Proceedings of the IEEE 97: 1250-1268. doi:10.1109/JPROC.2009.2015060.
Marconi, A., A. Anopchenko, M. Wang, G. Pucker, P. Bellutti and L. Pavesi. 2009. High power efficiency in Si-nc/SiO2 multilayer light emitting devices by bipolar direct tunneling. Applied Physics Letters 94: 221110-221113. doi:10.1063/1.3147164.
Hossain, S.M., A. Anopchenko, S. Prezioso, L. Ferraioli, L. Pavesi, G. Pucker, et al. 2008. Subband gap photoresponse of nanocrystalline silicon in a metal-oxide-semiconductor device. Journal of Applied Physics 104: 074917. doi:10.1063/1.2999561.
Prezioso, S., A. Anopchenko, Z. Gaburro, L. Pavesi, G. Pucker, L. Vanzetti, et al. 2008. Electrical conduction and electroluminescence in nanocrystalline silicon-based light emitting devices. Journal of Applied Physics 104: 063103-063108. doi:10.1063/1.2977749.
Anopchenko, A., T. Psurek, D. VanderHart, J.F. Douglas and J. Obrzut. 2006. Dielectric study of the antiplasticization of trehalose by glycerol. Physical Review E 74: 031501-031510. doi:10.1103/PhysRevE.74.031501.
Obrzut, J. and A. Anopchenko. 2004. Input impedance of a coaxial line terminated with a complex gap capacitance - Numerical and experimental analysis. IEEE Transactions on Instrumentation and Measurement 53: 1197-1201. doi:10.1109/TIM.2004.830777.