Introduction to Nanoelectronics
Course Code : ECE517 (Received Teaching Excellence Award twice for this course offered in Winter-2017 and Winter-2018)
Credits : 4
Course website : https://www.usebackpack.com/iiitd/w2017/ece5ine/info
Overview
Nanoelectronics is an interdisciplinary area of research which has a huge potential and is currently attracting a great deal of attention. The objective of this course is to understand the basic principles that govern the operation and electrical characteristics of nanoelectronic devices and become familiar with the recent research being undertaken in nanoelectronics.
Description
Expected Outcome:
At the end of the course the student:
Clearly explains distinct phenomena that are important in nanoelectronic devices.
Is able to describe the operating principles, merits, demerits and challenges of some of the futuristic nanoelectronic devices.
Is able to compute a given parameter or physical quantity for a nanoelectronic device by applying appropriate equations or formula.
Is able to describe the challenges of scaling of conventional MOSFETs and possible solutions.
Course Content (Week-wise schedule):
Overview of Nanoelectronics: significance, "bottom-up" approach to build devices, trends and ITRS perspective
Quantum Mechanics: Wave Properties of Particle, Basic Postulates, Wave Function, Schrodinger’s equation, Expectation Value, Particle in a Box, Finite Potential Well, Tunnel Effect
Semiconductor Physics: Crystal Structure, Energy Bands, Density of States, Distribution Functions, Fermi Level, Quantum Well, Quantum Wire, Quantum Dot
Carrier Transport: Semi-classical Transport, Transport in Confined Materials, Ballistic Transport
MOSFETs: Operation, Short Channel Effects, Limits on Subthreshold Swing and its consequences, Challenges in Scaling
Highly Scaled MOSFETs: High-k dielectric, Strain, FDSOI MOSFET, FinFETs, III-V Materials
2-D Materials: Graphene, Transition Metal Dichalcogenide (TMD)
1-D Materials: CNT, Nanowires
CNT, Graphene Nanoribbon and Nanowire based FETs
Steep Subthreshold Slope Devices: Tunnel FET, NCFET, IMOS
Nanoelectromechanical Switches (NEMS)
Novel Devices: Single Electron Transistors, Molecular Devices
Summing Up and Presentation
Evaluation
Quizzes - 20%
Mid-sem - 30%
End-sem - 45%
Online tool based assignment - 5%
Pre-requisites (Mandatory)
Basic understanding of P-N junction and MOSFET
Pre-requisites (Desirable)
Fundamentals of Solid-State Devices
Textbooks
There is no prescribed textbook for this course. At the end of each lecture, appropriate references will be given.
Some references which will be helpful in the course are:
Feynman, Leighton, Sands, “The Feynman Lectures on Physics”, Vol. 3
David J. Griffiths, “Introduction to Quantum Mechanics”
Arthur Beiser, "Concepts of Modern Physics"
S. M. Sze, "Physics of Semiconductor Devices", John Wiley and Sons,
D. A. Neaman, "Semiconductor Physics and Devices"
International Technology Roadmap for Semiconductors (ITRS), "Emerging research devices", 2013 edition." http://www.itrs.net, 2013.
S. Datta, "Quantum Transport: Atom to Transistor", Cambridge University Press, 2nd ed., 2005"
M. Lundstrom, J. Guo: Nanoscale Transistors
M.S. Dresselhaus, G. Dresselhaus, Ph. Avouris, "Carbon Nanotubes"
R. Murali, "Graphene Nanoelectronics: From Materials to Circuits"
Resources at Nanohub (https://nanohub.org/)
Research Papers (Pointers will be given in the class)
Policies
1. Late Assignment Submission Policy
Each day of delay will attract 20 % penalty and after 5 days delay no more submission
Illustration: Day of submission is 20th August
Submission is on-time if it is done by 12:00 midnight of 20th August
Submitted at 8:00 am 21th August: Penalty of 20%, If marks obtained was 20, it will change to 16 marks
Submitted at 1:00 am 25th August: Penalty of 100%, If marks obtained was 20, it will change to 0 marks
2. Academic dishonesty/plagiarism/cheating policy
IIITD rules will apply.
Academic dishonesty policies of IIIT Delhi apply. https://www.iiitd.ac.in/sites/default/files/docs/education/AcademicDishonesty.pdf
Anonymous comments of students who took this course in Winter-2018 and Winter-2017
Instructors motivation and very interesting explanations helped me learn the course
The lectures and the tool based assignment helped me learn the course. Some recommended papers, journals posted by the instructor on usebackpack also helped.
Attending the lectures regularly helped me learn in this course.
Following things helped me learn in the course: 1.Meticulous hard work by the instructor 2. Assignments 3. Very interesting presentation of the subject
Suggestion for other students considering taking this course: Be attentive in class. Prof is awesome you just need to listen to him.
The structure of the course and the instructors clarity in explanation of the concepts were the major reasons of effective learning.
The lecture slides were very useful and the way they were delivered by the faculty helped to learn the subject.
The efforts of the instructor and his way of teaching helped me learn in this course.
The course is designed so nicely that I cant think of any changes that would improve my learning.
This course provides knowledge related to nano devices which is interesting.
This course is good for the students who want to study the operation of different devices at nano scales and want to study quantum electronics.
If a student attends the lectures attentively then assignment and exams are easy.
Take this course if you are interested, and you'll surely learn a lot.
Take this course only if you want to learn else don't.
The structure of course, is well defined. First our basic concept is cleared and then move to different nano-devices.
Take this course after studying Physics a bit, it will be more enjoyable.
Yeah I'll recommend students to take this course for better understanding of MOSFET.
Keep it up. Expecting other interesting courses from you related to INE, probably a course based on this. P.S please teach us foundational subjects like Digital VLSI Design too if possible.