Solid State Devices

Course Code                : ECE318/ECE518 (In Monsoon-2022, Monsoon-2023)

Credits                          : 4

Course website            : https://classroom.google.com/u/0/c/NjE3NDQ0NjkxNTg3 (2023)

Overview

This course provides fundamental knowledge required for many other courses in Analog, digital and Mixed signal IC design (Analog CMOS Circuit Design, Mixed Signal Design, Low Power Design and Digital VLSI Design). The course starts with an overview of semiconductors and their conduction mechanism. Then explains PN junction formation and operation of various types of two terminal semiconductor devices and BJTs. The discussion will be extended to MOSCAP and MOSFETs, which are very important elements in the modern IC design. In addition MOSFET short channel effects will also be explained as they are becoming highly significant with technology scaling. Fabrication process will also be covered.

Description

Expected Outcome:

At the end of the course the student:

• • Students are be able to understand the relation between terminal characteristics and process parameters

  • Students are able to analyze current- voltage characteristics of the pn- junction diode

  • Students are able to understand working principles of various types of two terminal devices and BJT

  • Students are able to understand the MOSCAP operation. Determine small signal parameters, analyze current-voltage characteristics of the MOSFET and able to implement passive elements (resistor and capacitor) with MOSFETs.

  • Students are able to understand device fabrication and short channel effects of the MOSFETs

Course Content (Week-wise schedule):

1. Week 1, 2: Introduction to Semiconductors, Energy bands, intrinsic and extrinsic Silicon Carrier transport in Silicon: Diffusion current, drift current, mobility, Resistivity, Generations and recombination of carriers, excess carriers (6)

2. Week 3, 4: Properties PN junction diode ideal and non- ideal characteristics Forward bias, reverse bias, breakdown, tunneling, ohmic contacts, near ohmic contacts (6)

3. Week 5, 6: Schottky diode, Light emitting diode, photo diode BJTs: IV characteristics, small signal model, high frequency models, breakdown (6)

4. Week 7, 8, 9, 10: MOS capacitors, MOSFET ideal and non-ideal characteristics, inversion, accumulation, threshold voltage, small signal models, triode and saturation, sub-threshold conduction (12)

5. Week 11, 12, 13: Device fabrication, Short channel effects: Charge sharing, DIBL, velocity saturation, hot carriers (9).

Evaluation

• Assignment - 15/5 % (ECE318/518)

• Mid-sem - 30%

• End-sem - 45%

• Review Paper: 0/10 % (ECE318/518)

Pre-requisites (Mandatory)

• None

Textbooks

• D. A. Neaman, "Semiconductor Physics and Devices"

• Yannis Tsividis and Colin McAndrew , “Operation and Modeling of the MOS Transistor”, Third edition

• S. M. Sze, "Physics of Semiconductor Devices"

• Taur and Ning, Fundamentals of Modern VLSI Devices